Silicon Wafer Committee Europe
Werner Bergholz, Jacobs University Bremen
Friedrich Passek, Siltronic AG
Peter Wagner
Updated June 26, 2014
Task Forces with European
Participation
Int. Advanced Wafer Geometry (AWG) TF
– Leaders: N. Poduje, SMS, J. Sinha, KLA-Tencor,,S. Akiyama, Raytex,
F. Passek, Siltronic AG/F. Riedel, Siltronic AG
Int. Advanced Surface Inspection (ASI) TF
– Leaders: K. Haller, KLA-Tencor, Y. Tamaki, F. Riedel, Siltronic AG
Int. Terminology TF
– Leaders: M. Bullis, Materials & Metrology, T. Nakai, Sumco, P. Wagner
Int. Test Methods TF
– Leaders: D. Gupta, STA, R. Takeda, P. Wagner
Int. Polished Wafer TF
– Leaders: M. Bullis, Materials & Metrology, T. Takenaka, Consultant, K.
Matsukawa, Renesas, K. Izunome, GlobalWafers F. Riedel, Siltronic
AG
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Meeting Information
Last meeting
– October 8-10, 2013
• SEMICON Europa
• Dresden, Germany
Next meeting
– Oct 7, 2014
• SEMICON Europa
• Grenoble, France
• Check www.semi.org/standards for latest update
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Leadership Changes
Int. Advanced Surface Inspection TF
–New Europe leader
• Frank Riedel (Siltronic AG)
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Ballot results
Document passed committee review, pending
procedural review
– Doc. 5503, Line Items Revision to SEMI M52-0912,
Guide for Specifying Scanning Surface Inspection
Systems for Silicon Wafers for the 130 nm to 11 nm
Technology Generations
• Line Item 1 - Add SEMI M80 in section 3.1 SEMI Standards
and Safety Guidelines and Table 1, line 1.7 in the References
column.
– Passed superclean
• Line Item 2 - Modify Line 1.13 in Table 1
– Passed superclean
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New SNARFs
Int. Polished Wafer TF
– Doc. 5653, Line Item Revision of SEMI M1-1013,
Specifications for Polished Single Crystal Silicon
Wafers, to correct errors from previous ballot
– Doc. 5655, Line Item Revision of SEMI M1-1013,
Specifications for Polished Single Crystal Silicon
Wafers, to update 450 mm wafers edge exclusion
Int. Advanced Wafer Geometry TF
– Doc. 5654, Line Item Revision of M49-0613, Guide
for Specifying Geometry Measurements Systems for
Silicon Wafers for the 130 nm to 16 nm Technology
Generations
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Ballots approved for Cycle 7-2013
All ballots will be adjudicated at SEMICON
Japan 2013
• Doc. 5500, New Standard: Specifications for Polished
Single Crystal Silicon Wafers for Gallium Nitride-OnSilicon Applications
• Doc. 5605, Line Item Revision to SEMI M1-1013,
Specifications for Polished Single Crystal Silicon Wafers
(Re: Wafers for 16nm technology generation SFQR)
• Doc. 5653, Line Item Revision of SEMI M1-1013,
Specifications for Polished Single Crystal Silicon Wafers,
(Re: To correct errors from previous ballot)
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Int. Advanced Wafer Geometry TF
• Meeting at SEMICON Europa 2013
• Drafting doc. 5654, Line Item Revision of M49-0613,
Guide for Specifying Geometry Measurements Systems for
Silicon Wafers for the 130 nm to 16 nm Technology
Generations
• edge exclusion reduction from 2 mm to 1.5 mm at 16 nm technology
generation.
• Doc. 5540, Revision of SEMI M1-1013, Specifications for
Polished Single Crystal Silicon Wafers (Re: Related
Information: Illustration of Flatness and Shape Metrics for
Silicon Wafers)
• under development
• Discussion for a SNARF for: Revision to SEMI M78 Guide
for determining Nanotopography to add adjusting filter size
and analysis area
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Int. Polished Wafer TF
• Meeting at SEMICON Europa 2013
• Doc. 5500, New Standard: Specifications for Polished
Single Crystal Silicon Wafers for Gallium Nitride-OnSilicon Applications
• Issued in cycle 7-2013 for review at SEMICON Japan
• Drafting doc. 5655, Line Item Revision of SEMI M11013, Specifications for Polished Single Crystal Silicon
Wafers, to update 450 mm wafers edge exclusion 2 mm
to 1.5 mm
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Int. Advanced Surface Inspection
TF
• Meeting at SEMICON Europa 2013
• New Europe leader
• Frank Riedel (Siltronic AG)
• Discussed 5 year review for SEMI M35-1107 - Guide for
Developing Specifications for Silicon Wafer Surface
Features Detected by Automated Inspection
• Doc. 5503, Line Items Revision to SEMI M52-0912,
Guide for Specifying Scanning Surface Inspection
Systems for Silicon Wafers for the 130 nm to 11 nm
Technology Generations
• Approved pending procedural review
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Int. Terminology TF
• No meeting in Europe for a while
• Contributions to on-going activities regarding SEMI M59,
Terminology for Silicon Technology. Goal is to collect all
definitions and acronyms in M59 and to remove them
subsequently from the originating standards
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Int. Test Methods TF
• No meeting in Europe for a while
• Interaction with Japanese and NA TFs regarding
• Doc 4846C, Revision to MF1982,Test method for
Analyzing Organic Contaminants on Silicon Wafer
Surface by Thermal Desorption Gas Chromatography,
and
• Doc 4844B, Guide for the measurement of trace
metal contamination on silicon wafer surface by
inductively coupled plasma mass spectrometry
• Doc 5313C, Revision to MF1535, µPCD
measurement
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Questions?
Contact
– James Amano (jamano@semi.org)/HQ
– Kevin Nguyen (knguyen@semi.org)/HQ
– Andrea Busch (abusch@semi.org)/Europe
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