Wisconsin Center for Applied Microelectronics

1550 Engineering Drive Madison, WI 53706 Phone: 608/262-6877 Fax: 608/265-2614

T Y S T A R T U B E # 1 , , W E T / / D R Y O X I I D A T I I O N F U R N A C E

Process Description:

Silicon dioxide is used as an insulator in active devices and the region or field between the devices. There are various oxidation methods but thermal oxidation produces fewer defects in the bulk and at the silicon interface. At room temperature, silicon will oxidize at the wafer surface. When oxygen is introduced to silicon wafers at higher temperatures, the oxygen will diffuse through the oxide to allow the reaction at the silicon interface. One method is dry oxidation where pure oxygen is the oxidant. Another method is a mixture of O2 and H2 to produce steam as the oxidant. This method oxidizes the wafer at a much higher rate than dry oxidations.

Equipment Description:

The oxidation system is located in Tube 1 on the top of the Tystar furnace and can process 3, 4 and 6-inch wafers. The system uses a microprocessor sequencer to automatically control the in and out movement of the cantilever and the tube temperature and gas flow. Wafers are loaded on boats and transferred into the tube by a cantilever system. Various recipes have been developed to offer dry oxidations, wet oxidations or anneals.


Hydrogen Nitrogen Oxygen

Approved Materials for use in this equipment:

Check the APPROVED MATERIALS for this equipment on http://mywebscape.wisc.edu under

WCAM in the group directories.

Date last modified: 4/14/2020 Date created: 11/25/08 Content by: Rebecca Bauer