WEST VIRGINIA UNIVERSITY
College of Engineering & Mineral Resources
Lane Department of Computer Science & Electrical Engineering
EE 550 Advanced Semiconductor Electronics
Fall 2014 - 3 Credit Hours
Instructor:
Dr. Dimitris Korakakis
Phone: 304-293-9697
Room 745 ESB
Email:dimitris.korakakis@mail.wvu.edu
Office Hours: 10:00-12:00 Tue. and Thurs. or by appointment
Class Time:
12:30-13:45 Tue. and Thurs.
Class Location: ESB 449
Prerequisites: EE 450 or equivalent
Required Text: Muller, Kamins and Chan, Device electronics for integrated circuits, 3rd Ed., 2003.
Description: In depth fundamentals of semiconductor materials, p-n and metal-semiconductor
junctions, JFETs and MESFETs, MOSFETs, BJTs, LED’, laser diodes, physical device
fabrication, gate level CMOS design and layout.
Objectives:
Outcomes:
To provide students with the physical and engineering fundamentals of electronic device
physical design and simulation.
1. Students will be able to determine the characteristics of semiconductor devices, p-n
junctions, transistors etc, as a function of a set of parameters, doping, current, bias, etc.
2. Students will be able to engage with advanced topics and develop the ability in solving
problems of more complex issues in electronic devices, e.g. lower dimensional devices,
carrier confinement etc.
3. Students will gain the ability to design electronic devices suitable for specific
applications.
Tentative Lecture Schedule and syllabus for EE 450:
Week (approx)
Subject
1.
2.
3.
4.
5.
6.
7.
8.
9.
Topic
Electronics and photonics revolution, Physics framework: Particle duality, wave
functions, energy levels, potential in a box, Shrödinger equation, atomic
structure.
Basic structures, periodic potential, effective mass, energy bands, Fermi-level,
Carrier Concentrations, intrinsic/extrinsic material. Basic Crystallography,
principles of x-ray diffraction, epitaxial growth.
Scattering and drift of electrons and holes, drift current, Carrier Diffusion, Hall
effect. Generation, recombination and injection.
Built-in field, Transient response and photoconductivity. Semiconductor
governing equations.
EXAM 1
p-n junction, depletion approximation, DC I-V Characteristics, Recombination
and Generation in Space Charge Region. Small signal ac analysis, transient/step
recovery. Degenerate Semiconductors, tunnel diode, Gunn diode.
Metal-Semiconductor junction, ideal Schottky barrier, work functions, band
diagrams, current voltage characteristics. Ohmic/rectifying contacts, p-n junction
comparison.
JFET/MESFET, Structure and operation, static and ac characteristics, equivalent
circuits, cutoff frequency, design enhancements. MOSFET, Structure, MOS
capacitor, flat band and threshold voltages.
EXAM 2
over ......
10.
11.
12.
13.
14.
Application Devices: Optical Detectors/solar cells. Light Emitting and Laser
Diodes. Heterostructures, strained epitaxial layers, quantum dots, alloys.
Static characteristics, Small signal parameters and equivalent circuit. Long
channel MOSFET characteristics.
Short Channel MOSFET characteristics, hot carrier effects, scaling laws.
Additive and subtractive processes, photolithography.
Device Design/layout impact on device performance: MOSFET.
FINAL
RULES OF OPERATION FOR EE 550
General: Attendance will be taken intermittently by sign-in sheet and used in grading. The lectures will
explain, expand upon, and supplement the assigned reading material and will in many instances provide
background information for assignments, therefore, attendance is strongly recommended. Handouts,
verbal instructions and demonstrations cannot always be scheduled in advance but will occur when
appropriate for the topic. Students missing a class are responsible for all material covered.
Grading: Semester grades will be computed roughly as follows:
Homework and quizzes, attendance:
Mid Term Examinations:
Final Examination:
EE 550
10% (6-10 assignments)
25% + 25%
40%
Tests will seek to determine your level of mastery of fundamental principles and methods developed in
the lectures, text and reinforced/expanded upon through homework assignments. Grades will generally
be 90-100%=A, 80-89% = B, 70-79% = C, etc. Actual dates for exams will be chosen in class.
Homework sets: All graded homework sets will be given 100 points per set. Unexcused late homework
and reports will not be accepted. Students are encouraged to discuss homework assignments but must
submit their individual assignments. Plagiarized assignments will be severely penalized if detected, and
if not, punishment is always self-inflicted during exams. If you do not fully understand any material, see
me promptly.
Academic Honesty: The integrity of the classes offered by any academic institution solidifies the
foundation of its mission and cannot be sacrificed to expediency, ignorance, or blatant fraud. Therefore, I
will enforce rigorous standards of academic integrity in all aspects and assignments of this course. For the
detailed policy of West Virginia University regarding the definitions of acts considered to fall under
academic dishonesty and possible ensuing sanctions, please see the Student Conduct Code at
http://www.arc.wvu.edu/admissions/integrity.html. Should you have any questions about possibly
improper research citations or references, or any other activity that may be interpreted as an attempt at
academic dishonesty, please see me before the assignment is due to discuss the matter.
The West Virginia University community is committed to creating and fostering a positive learning and working environment
based on open communication, mutual respect, and inclusion.
If you are a person with a disability and anticipate needing any type of accommodation in order to participate in this class,
please advise me and make appropriate arrangements with the Office of Accessibility Services (293-6700). For more information
on West Virginia University's Diversity, Equity, and Inclusion initiatives, please see http://diversity.wvu.edu