IEE5561 Semiconductor Physics and Device (I)
Spring 2009
Mon: AM 9:10-10:00 ED103; Fri: PM 1:30-3:20 ED301
Instructor: 侯拓宏
email: thhou@mail.nctu.edu.tw
office: ED-409
phone: x54261
office hour: Monday AM 10:00-11:00 (ED-409)
Friday PM 3:30-4:30 (ED-409) or by appointment
TA: 林冠良
email: gwenliang.ee95g@nctu.edu.tw
office: ED-309C
phone: x54219
office hour: by appointment
Course Description:
The course teaches fundamental principles on using band diagrams and carrier transport
to analyze bipolar diodes, Schottky diodes, photodiodes, BJT, MOS capacitor, MOSFET
and Flash memories. Emphasis is put on the MOSFET designs for aggressively scaled
VLSI technology. The economical, environmental and social impacts of the
semiconductor technology will be illustrated from the past industrial data and the future
prediction. The goal for this course is to train circuit, device and process engineers for
semiconductor technology research and development.
Prerequisites:
Modern Physics (DEE2311 or equivalent)
Microelectronics (I) (DEE2320 or equivalent)
Exam and Grade Policy:
6 problem sets counting towards 30% of the final grade. Problem sets will be due in the
Friday’s class and the due dates will be firm. Late problem sets will not be accepted. The
only exception is if you obtain my prior consent (not the TA’s), or in unusual
circumstances. Plagiarism is not tolerated and will result in automatic failure of the
course!! DON”T lend your homework to others. You will get yourself into trouble too.
Because the homework exercise is one very important part of learning in this course, I
will strictly enforce this policy.
3 exams, 2 prelims (wk6 & wk12) and final (wk 18), counting toward 60% of the final
grade. Class participation counting toward 10% of the final grade.
Textbook:
1. S. M. Sze, and Kwok K. Ng, Physics of Semiconductor Devices, 3rd Ed, Wiley, (2007)
Reference Books:
1.
2.
3.
4.
Y. Taur and T. H. Ning, Fundamentals of Modern VLSI Devices, Cambridge, (1998)
R. F. Pierret, Advanced Semiconductor Fundamentals, vol. 6, 2nd Ed., Prentice Hall
(2003)
C. Kittel, Introduction to Solid State Physics, 8nd Ed., Wiley, (2004)
R.F. Pierret, Semiconductor Device Fundamentals, Addison-Wesley (1996)
Course Website:
http://www.cc.nctu.edu.tw/~thhou/teaching.html
Course Schedule:
Week 01 (2/22)
Semiconductor properties and Band theory
Week 02 (3/1)
Semiconductor properties and Band theory
Week 03 (3/8)
Carrier transport and perturbation from equilibrium
Week 04 (3/15)
P-N junction theory: electrostatics, ideal IV
Week 05 (3/22)
P-N junction theory: non-ideal effect and AC response
Week 06 (3/29)
Prelim I
Week 07 (4/5)
Schottky, heterojunction and photo diodes
Week 08 (4/12)
MOSC theory
Week 09 (4/19)
MOSC theory
Week 10 (4/26)
Ideal Long-channel MOSFET Theory
Week 11 (5/3)
MOSFET Theory for Submicron Technology
Week 12 (5/10)
Prelim II
Week 13 (5/17)
MOSFET Theory for Submicron Technology
Week 14 (5/24)
MOSFET Scaling and Design Considerations
Week 15 (5/31)
MOSFET Scaling and Design Considerations
Week 16 (6/7)
Theory and Design of BJT
Week 17 (6/14)
Theory and Design of BJT
Week 18 (6/21)
Final exam week