ELEN 334
SYLLABUS
FALL 2010
Solid State Electronics, Dr. Sandra Zivanovic
Course Description: In this undergraduate course students will familiarize with the physical properties
of semiconductor materials and methods of growing semiconductor crystals. We will investigate the
electronic structure of atoms and the interaction of atoms and electrons. We shall give a brief
introduction to quantum mechanics. The specific mechanisms by which current flows in a solid will be
addressed and fundamental concepts of charge transport explained. We will study the mechanism of
electron-hole pair recombination, the diffusion of excess carriers and the mechanism of the drift in an
electric field. Then we will learn about p-n junctions, the equilibrium state of the junction, the flow of
electrons and holes across a junction. Most important, students will gain the knowledge about the
operations, and applications of a field-effect transistor (FET) and bipolar junction transistor (BJT). If time
permits, students will be introduced to photodiodes, solar cells, light emitting diodes, and lasers.
Goal: Students successfully completing the course will understand how p-n junction devices work from
first principles.
Prerequisites: ENGR221, PHYS 202, and MATH244. Cumulative GPA≥2.0 for MATH240 through
MATH244.
Textbook: Semiconductor Physics and Devices, Basic Principles, Donald Neamen, Third Edition, 2003.
Reference Books:
Solid State Electronic Devices, B. G. Streetman and S. Banerjee, Prentice Hall.
Introduction to Electronic Circuit Design, Richard Spencer, Mohammed Ghausi, Prentice Hall, 2003.
Chapter 2.
Introduction to Semiconductor Devices, Donald Neamen, First Edition, 2006.
Class: Monday, Wednesday, Friday from 9:30-10.45am, Nethken Hall Room 140
Consultations: After the class.
Grading: Exam1 30%, Exam2 30%, Final 30%, Homework 10%.
Scale Used: A = 100-90%, B = 89-80%, C = 79-70%, D = 69-60%, F = below 60%.
Exams: For exams students must work independently.
Homework: Completed assignements should be turned in by the beginning of class on the due date
either in class or in the box in IfM in front of my office #219. Unless the assignment specifies otherwise,
you can work individually or in a team of two, handing one team solution per assignment. Strong
suggestion: Each member team should set up each problem individually (define unknowns, outline the
solution procedure), then get together to work out details.
Computer Account: Each student must have his/her user account on the university computer network
(i.e. userid@coes.latech.edu).
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Blackboard Account: The students in this class should use the course material, syllabus, homework and
exam solutions, discussion boards, announcements, etc. available at http://blackboard.latech.edu. To
login for the first time, please use your LaTech username and your initial password is your SSN# (or
PIN). If you have a problem to login, send me an e-mail.
Attendance: Class attendance is governed by university regulations published each year in the
university bulletin. Class attendance is regarded as an obligation as well as a privilege, and all students
are expected to attend regularly and punctually all classes in which they are enrolled. Failure to do so
may jeopardize a student’s scholastic standing and may lead to suspension from the college or
university.
Accommodations for Students with Disabilities: Students needing testing or classroom
accommodations based on a disability are encouraged to discuss those needs with me as soon as
possible.
Academic Honor Code: In accordance with the Academic Honor Code, students pledge the following:
Being a student of higher standards, I pledge to embody the principles of academic integrity.
http://www.latech.edu/documents/honor-code.pdf
Misconduct: Academic misconduct is governed by university regulations published each year in the
university bulletin. Academic misconduct at the University is determined by the faculty member under
whom such misconduct occurs. The penalty for cheating and other forms of misconduct is also
determined by the faculty member. The penalty may be an “F” in the course.
Emergency Notification System (ENS): All Louisiana Tech students are strongly encouraged to enroll
and update their contact information in the Emergency Notification System. It takes just a few seconds to
ensure you’re able to receive important text and voice alerts in the event of a campus emergency. For
more information, please visit: http://www.latech.edu/administration/ens.shtml.
Contact Information:
Sandra Zivanovic, Ph.D.
Associate Professor of
Electrical Engineering
Institute for Micromanufacturing (IfM)
Office: 911 Hergot Avenue, office #219
Tel. 318 257 5145
E-mail: sz@latech.edu
Important Dates:
First day of class: Friday, September 10
Exam 1: Friday, October 1
Exam 2: Friday, October 22
Final Exam: Monday, November 15
Last day of class: Wednesday, November 17
The Semiconductor Applet Service: http://jas.eng.buffalo.edu/
Summary of Basic Properties of Semiconductors:
http://www.elec.gla.ac.uk/groups/sim_centre/courses/basic/basic_1.html
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Tentative Course Schedule:
Week
1
2
2
2
3
Date
09/10
09/13
09/15
09/17
09/20
3
09/22
3
09/24
4
09/27
4
4
5
09/29
10/01
10/04
5
5
6
6
10/06
10/08
10/11
10/13
6
10/15
7
7
7
8
8
10/18
10/20
10/22
10/25
10/27
8
9
9
10/29
11/01
11/03
9
10
10
10
11
11
11/05
11/08
11/10
11/12
11/15
11/17
Course Topics
Chapter 1: Crystal Properties of Semiconductors
Chapter 2: Short course in Quantum Mechanics
Chapter 2: Atom and Potential Well Problem
Chapter 2: Atom and Potential Well Problem
Chapter 3: Bonding, Energy Gap, Electrons, Holes,
Effective Mass, Intrinsic&Extrinsic Semiconductors
Chapter 3: Bonding, Energy Gap, Electrons, Holes,
Effective Mass, Intrinsic&Extrinsic SemiconductorsContinued
Chapter 3: Fermi Level, Electron and Hole
Concentration in Equilibrium
Chapter 3: Fermi Level, Electron and Hole
Concentration in Equilibrium Review
Review/Questions
Exam 1
Chapter 4: Temperature Dependence of Carrier
Concentration
Chapter 5: Drift and Diffusion
Chapter 5: Conductivity, Resistivity, Mobility
Chapter 5: Conductivity, Resistivity, Mobility Chapter
Chapter 6: Nonequilibrium Excess Carriers in
Semiconductors
7: P-N Junction, Contact Potential Chapter Problem
Session
7: Space Charge, Current Flow
Review/Questions
Exam 2
Chapter 8: Current Flow, Forward and Reverse Bias
Chapter 8: Reverse Bias, Zener and Avalanche
Breakdown
Chapter 10: Bipolar Junction Transistor (BJT)
Chapter 10: Bipolar Junction Transistor (BJT) Cont.
Chapter 11/12: Metal Oxide Semiconductor FET (
MOSFET)
Chapter 13: Field Effect Transistor FET
Video: Silicon Run I and II
Review/Questions
Review/Questions
Final Exam
Consultations
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