Review of modern solid-state electronic devices, their principles of operation, and fabrication. Solid state physics fundamentals, free electrons, band structure, and transport properties of semiconductors. Nonequilibrium phenomena in semiconductors. P-N junctions, Schottky diodes, bipolar and field-effect transistors. Modern, high performance devices. Ultrafast devices. 4-credit course (3.5 units of engineering science and 0.5 unit of engineering design)
Professor Roman Sobolewski CSB410; phone: 275 1551; e-mail: [email protected] Office hours: by appointment, or... just stop by my office.
Lingyun Miao –
CSB 401a; e-mail: [email protected] Office hours: by appointment. Gregg Guarino –
e-mail: [email protected] Office hours: by appointment.
Donald A. Neamen,
Semiconductor Physics and Devices: Basic Principles,
Edition (McGraw-Hill, 2003).
Donald A. Neamen,
An Introduction to Semiconductor Devices,
Edition (McGraw-Hill, 2006).
Robert F. Pierret,
Semiconductor Device Fundamentals,
(Addison-Wesley Publ. 1996).
(Prentice Hall, 1998).
Tuesday and Thursday - 2:00 PM - 3:15 PM, CSB523.
Approximately every second week, due in class (total of 6 assignments). Homework solutions will be posted on the due date–no late homework accepted.
Each student will be asked to select a “Read-and-Review” project. The project mimics the submission and presentation process of the conference paper, and will consist of a submission abstract; oral, conference-type presentation in class; and a written proceedings paper prepared in the camera-ready style (following IEEE publication format). Your “publications” will be refereed by senior graduate students
There will be one exam: the
–approximately at late Oct./early Nov.
Will be computed on the following basis: Homework Exam Project Project written paper in-class presentation 15% 35% 20% 30%
1. Introduction to quantum mechanics and statistical physics of electrons. 2. 3. Semiconductor band structure, carrier concentration, and carrier transport phenomena. Nonequilibrium phenomena in semiconductors. p-n junctions, Schottky diodes, and heterostructures. 4. 5. Bipolar transistors. MOS capacitors and MOSFET devices. 6. GaAs devices and ultrafast devices.
The course is intended as a Senior-level elective (ECE223) and introductory graduate (ECE423/MSC426). It is especially strongly recommended for all ECE students in the undergraduate "Fields and Devices" and the graduate “Solid State and Optoelectronics” concentrations, as well as for all Materials Science Program graduates. The course main objective is to provide students with the extensive introduction to the physics of semiconducting materials, as well as with fundamentals of the modern Si and GaAs devices. Some knowledge of quantum mechanics (e.g., the PHY123 level) will help, but the course is intended to be “self-contained.” Thus, the minimal required elements of the quantum and statistical physics will be introduced in class.
Class electronic Mailing List will be set up. To send a message to everyone on the class list, send e-mail to [email protected]
. Class web sites: http://www.ece.rochester.edu/courses/ECE423/ UR Course Resources and Reserves – Sobolewski: ECE223, ECE423, or MSC426
If serious illness prevents you from handing in an assignment on time, taking an exam, or presenting a project, please contact Prof. Sobolewski as soon as possible to arrange a makeup. All work handed in for grading is accepted with the this course.
that it has been performed and written up by the person whose name appears on the paper. All applicable university policies concerning academic honesty will be strictly observed in 2