10/1/23, 7:40 PM
Syllabus for EECS 170A LECTURE
Course Syllabus
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ELECTRONICS I
EECS170A, Fall 2023
Catalog Data: EECS170A Electronics I (Credit Unit: 4) The properties of semiconductors, electronic conduction in solids, the physics and operation
principles of semiconductor devices such as diodes and transistors, transistor equivalent circuits, and transistor amplifiers. (4 Units)
Prerequisites: EECS70A, EECS70B and Physics 7D.
Co-requisite: Physics 7E.
Textbook:
References:
D.A. Neamen, Semiconductor physics and Devices, 4th Ed., McGraw Hill, or newer edition Required!
R. F. Pierret, Semiconductor Device Fundamentals, Addison-Wesley, 1996,
Anderson and Anderson, Fundamentals of Semiconductor Devices, McGraw-Hill, 2005
1. Streetman and S. K. Banerjee, Solid State Electronic Devices, Prentice Hall, 2006
Coordinator: Ozdal Boyraz, Engineering Hall 4420, oboyraz@uci.edu (mailto:oboyraz@uci.edu)
Office Hour: Thursday @10:30AM-12:00PM
TAs:
TBA
Reader:
TBA
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Class Schedule: Lecture: Tu, Th SSL 248 12:30-1:50PM.
Students should be registered to 1-hour discussion session per week.
All lectures are going to be prerecorded in course modules. It is mandatory for all students to follow weekly lectures from recordings or from live lectures.
Course Objectives: Students will understand:
Basic properties of semiconductors and electronic conduction in solids
Physics and operation principles of diodes and transistors and
Diode and transistor circuit analysis
Analyze and design single stage transistor amplifiers
Course Outcomes: Students will learn:
Basic properties of semiconductors
Carrier transport in semiconductors
Semiconductor-semiconductor and metal-semiconductor junctions
Bipolar junction transistors (BJT)
Single stage amplifier design and transistor circuit analysis
CMOS fundamentals
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Syllabus for EECS 170A LECTURE
Grading Criteria:
Weekly Homework Assignments:
15%
Attendance
10%
Midterm:
30% (Thursday Nov 9th)****
Final exam:
45% (December 15th 10:30 AM)
Total:
100%
Letter grades are based on a curve about the median score which is assigned to a B-/ C+ grade.
Cumulative scores <40 will be F
Cumulative scores >40, but <50 (???) depend on class success.
HW Policy: 1) There will be weekly HW problems. Each HW will be assigned on Friday and it will be due on following week on Friday. HWs should be
submitted online
2) It is permissible to discuss HW questions with others. However, copying the same answer is prohibited. If detected so, the score will be
distributed among all collaborators.
3) Late Submission: 20% grade reduction for 0-24h delay in submission. 30% grade reduction for 24-48h delay in submission. NO submission
after 48 hours.
4) Students are responsible with the quality of online submissions. Any wrong submissions, illegible or corrupted files are students’
responsibility. You should check your uploaded files and verify the quality.
Class Rules: We have rather large class and it is our goal to provide proper learning environment for everybody. Any disturbance in the form of using
technology, loud talking, web surfing or any other form is not permissible. Up to 5% penalty on total grade can be applied to those who are reluctant to
show proper care. In particular: NO CELL PHONES
TENTATIVE EECS 170A STUDY PLAN
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Lecture Weeks TOPICS
PAGES
0
1-13
Introduction
Energy bands
Electrical conduction in solids
1
Charge carriers in semiconductors and Concept of
Hole
58-63
72-96
Doping and extrinsic semiconductors
Metals, Insulators and Semiconductors
Density of States Function
Fermi statistics
Semiconductors in equilibrium
105-150
2
Intrinsic carrier concentration and Fermi level
Charge Neutrality
Band bending due to concentration and temperature
3
Carrier drift
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156-180
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Syllabus for EECS 170A LECTURE
Mobility effects
Conductivity and Resistance
Carrier diffusion
Graded doping and band bending and electric field
Semiconductor in equilibrium
192-215
Carrier generation recombination
4
219-221
Ambipolar transport
Quasi Fermi Levels
P-N Junction Intro
241-262
5
I-V Characteristics
P-N Junction diode
276-295
6
Carrier distributions and current in p-n junction diode 304-314
Bipolar Junction Transistor (BJT)
Basic principle
492-522
7
Currents in BJT
Modes of Operation
Ebers-Moll Model
8
536-549
BJT Circuit analysis (additional material)
MOSFET
Energy band diagram
332-338
9
Flat-band voltage
371-427
Threshold voltage

I-V relationship
Basic MOSFET circuit operation
10
MOSFET Additional material
FINAL
Course Summary:
Date
Details
https://canvas.eee.uci.edu/courses/58485/assignments/syllabus
Due
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