The University of Jordan
School of Engineering
Department of Electrical Engineering
1st Semester – A.Y. 2014/2015
Course:
Electronics I – 0903261
Instructor:
Dr. Omar El-Ghezawi
Office: E316, Telephone: 5355000 ext 22854, Email: ghezawi@ju.edu.jo
Course Website:
N.A.
Catalog Data:
Semiconductors. The P-N junction: characteristics, model and some common applications.
Analysis of circuits containing P-N junction diodes. The Bipolar Junction Transistor
(BJT): characteristics, models, and configurations. The Field Effect Transistor (FET):
characteristics, models, and configurations. Analysis of amplifier circuits at low
frequencies.
Prerequisites by
Course:
Prerequisites
By Topic:
EE 0903211 – Electrical Circuit I (pre-requisite)
Textbook:
Electronic Circuit Analysis and Design by Donald A. Neaman, 3rd Edition, Oxford
University Press, 2001.
References:

Schedule &
Duration:
Minimum Student
Material:
Minimum College
Facilities:
Course
Objectives:
(3 Cr. – Core Course)
Students are assumed to have a background in the following topics:
 Basic circuit analysis techniques.
 Solution of ordinary differential equations.
Microelectronic Circuits by A.S. Sedra & K.C. Smith, 2nd Edition, Mc-Graw-Hill,
1998.
 Electronic Circuits by Intellin Organization, BookSurge Publishing, 2006.
 Electronic Circuit Analysis and Design by Donald A. Neamen ,javascript:void(0)
Irwin Professional Publishing, 1996.
 Electronic Formulas, Symbols & Circuits by Forrest M. Mims III javascript:void(0),
Master Publishing, Inc., 2004.
16 Weeks, 42 contact hours (50 minutes each) including exams.
Textbook, class handouts, scientific calculator, and an access to a personal computer.
Classroom with whiteboard and projection display facilities, library, computational
facilities with NI MultiSim program.
The overall course objective is to introduce the student to semiconductor devices,
specifically circuit analysis, design, and applications of:
1. Diodes circuits.
2. BJT basic structure and operation, DC biasing, small-signal circuit model, and
possible amplifier configurations.
3. FET types, basic structure and operation, DC biasing, small-signal circuit model,
and possible amplifier configurations.
Course Learning Outcomes and Relation to ABET Student Outcomes:
Upon successful completion of this course, a student should:
1.
Understand semiconductor materials, types and properties.
2.
Understand the P-N junction principle of operation and characteristics.
3.
Be able to analyze and design circuits containing diode applications including the different half
wave and full wave rectifier circuit’s configurations and bridge rectifiers.
4.
Understand the operation of a P-N junction in the breakdown region.
5.
Learn how to analyze circuits containing Zener diode applications including Zener diode based
voltage regulators.
6.
Understand the physical structure, principle of operation and characteristics of BJT transistors and
FET transistor in both: MOSFET and JFET transistors.
7.
Be able to perform DC analysis of BJT and FET circuits and determine the bias point of a transistor
in an amplifier circuit.
8.
Become familiar with the different biasing configurations of a BJT & FET amplifier circuits.
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Course Topics:
1.
2.
3.
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Topic Description
Units, Semiconductor Materials: Intrinsic, extrinsic, n-type, and p-type semiconductors, doped
semiconductor materials, P-N junction and characteristics, depletion region and threshold voltage,
reverse and forward biasing of P-N junctions, P-N junctions in breakdown region, and i-v
characteristics.
Diodes: The ideal diode, real diodes, physical operation of diodes, analysis of diode circuits, the smallsignal model and its application, operation in the reverse breakdown region (Zener diodes), rectifier
circuits, limiting and clamping circuits.
Bipolar Junction Transistors (BJTs):Physical structure and modes of operation, operation of the npn
transistor in the active mode, circuit symbols and conventions, analysis of transistor circuits at DC, the
transistor as an amplifier, small-signal equivalent circuit models, biasing the BJT for discrete-circuit
design, basic single-stage BJT amplifier configuration, the transistor as a switch – cutoff and saturation.
Field-Effect Transistors (FETs): Structure and physical operation of the MOSFET and JFET
transistors, current-voltage characteristics, DC analysis of MOSFET & JFET circuits, the MOSFET as
an amplifier, biasing in MOS amplifier circuits, basic configurations of single-stage MOS amplifiers.
Hrs
6
12
15
15
Ground Rules:
Attendance is required and highly encouraged. To that end, attendance will be taken
every lecture. All exams (including the final exam) should be considered cumulative.
Exams are closed book. No scratch paper is allowed. You will be held responsible for all
reading material assigned, even if it is not explicitly covered in lecture notes.
Assessments:
Grading policy:
Exams, Quizzes, Projects and Assignments.
First Exam
Midterm Exam
Final Exam
Total
Last Updated:
October 2014
20 %
30 %
50 %
100%