1. A multi-channel fully differential programmable integrated circuit for neural recording application
Gui, Yun (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Zhang, Xu; Wang, Yuan; Liu, Ming; Pei, Weihua; Liang,
Kai; Huang, Suibiao; Li, Bin; Chen, Hongda Source: Journal of Semiconductors, v 34, n 10, October 2013
Database: Compendex
2. Electronic structural Moiré pattern effects on MoS 2/MoSe2 2D heterostructures
Kang, Jun (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors,
Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Li, Jingbo; Li, Shu-Shen; Xia,
Jian-Bai; Wang, Lin-Wang Source: Nano Letters, v 13, n 11, p 5485-5490, November 13, 2013
Database: Compendex
3. 1.06-μm InGaAs/GaAs multiple-quantum-well optical thyristor lasers with a PiNiN structure
Wang, Huolei (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese
Academy of Science, Beijing 100083, China); Mi, Junping; Zhou, Xuliang; Meriggi, Laura; Steer, Matthew;
Cui, Bifeng; Chen, Weixi; Pan, Jiaoqing; Ding, Ying Source: Optics Letters, v 38, n 22, p 4868-4871,
November 15, 2013
Database: Compendex
4. High delay precision based on dynamic phase-shift for range-gated laser imaging technology
Cui, Wei (Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China); Fan,
Song-Tao; Wang, Xin-Wei; Zhou, Yan Source: Proceedings of SPIE - The International Society for
Optical Engineering, v 8905, 2013, International Symposium on Photoelectronic Detection and Imaging
2013: Laser Sensing and Imaging and Applications
Database: Compendex
5. The application of camera calibration in range-gated 3-D imaging technology
Liu, Xiao-Quan (Optoelectronic System Laboratory, Institute of Semiconductor, CAS, Beijing 100083,
China); Wang, Xian-Wei; Zhou, Yan Source: Proceedings of SPIE - The International Society for Optical
Engineering, v 8905, 2013, International Symposium on Photoelectronic Detection and Imaging 2013:
Laser Sensing and Imaging and Applications
Database: Compendex
6. Atomic layer deposition of BiFeO3 thin films using β-diketonates and H2O
Zhang, Feng (Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Sun, Guosheng; Zhao, Wanshun; Wang, Lei; Zheng, Liu;
Liu, Shengbei; Liu, Bin; Dong, Lin; Liu, Xingfang; Yan, Guoguo; Tian, Lixin; Zeng, Yiping Source: Journal
of Physical Chemistry C, v 117, n 46, p 24579-24585, November 21, 2013
Database: Compendex
7. GaN nanorod light emitting diodes with suspended graphene transparent electrodes grown by rapid
chemical vapor deposition
Xu, Kun (Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of
Education, Beijing 100124, China); Xu, Chen; Xie, Yiyang; Deng, Jun; Zhu, Yanxu; Guo, Weiling; Mao,
Mingming; Xun, Meng; Chen, Maoxing; Zheng, Lei; Sun, Jie Source: Applied Physics Letters, v 103, n 22,
November 25, 2013
Database: Compendex
8. Temperature dependence of electronic behaviors in n-type multiple-channel junctionless transistors
Ma, Liuhong (Engineering Research Center for Semiconductor Integration Technology, Institute of
Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Han, Weihua; Wang, Hao; Li,
Xiaoming; Yang, Fuhua Source: Journal of Applied Physics, v 114, n 12, 2013
Database: Compendex
9. Size-controllable nanopyramids photonic crystal selectively grown on p-GaN for enhanced
lightextraction of light-emitting diodes
Du, Chengxiao (Semiconductor Lighting Technology Research and Development Center, Institute of
Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Wei, Tongbo; Zheng, Haiyang;
Wang, Liancheng; Geng, Chong; Yan, Qingfeng; Wang, Junxi; Li, Jinmin Source: Optics Express, v 21, n
21, p 25373-25380, October 21, 2013
Database: Compendex
10. First-principles study of electronic and magnetic properties of FeC13-based graphite intercalation
compounds
Li, Yan (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese
Academy of Sciences, P.O. Box 912, Beijing 100083, China); Yue, Qu Source: Physica B: Condensed
Matter, v 425, p 72-77, 2013
Database: Compendex
11. Design of a high-speed silicon electro-optical modulator based on an add-drop micro-ring resonator
Cao, Tong-Tong (State Key Laboratory on Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Zhang, Li-Bin; Fei, Yong-Hao; Cao, Yan-Mei; Lei, Xun;
Chen, Shao-Wu Source: Wuli Xuebao/Acta Physica Sinica, v 62, n 19, 2013 Language: Chinese
Database: Compendex
12. Nanotetrapods: Quantum dot hybrid for bulk heterojunction solar cells
Tan, Furui (Key Laboratory of Photovoltaic Materials, Department of Physics and Electronics, Henan
University, Kaifeng 475004, China); Qu, Shengchun; Li, Fumin; Jiang, Qiwei; Chen, Chong; Zhang,
Weifeng; Wang, Zhanguo Source: Nanoscale Research Letters, v 8, n 1, p 1-8, 2013
Database: Compendex
13. High power buried sampled grating distributed feedback quantum cascade lasers
Zhang, J.C. (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing, 100083, China); Liu, F.Q.; Yao, D.Y.; Zhuo, N.; Wang, L.J.; Liu, J.Q.; Wang,
Z.G. Source: Journal of Applied Physics, v 113, n 15, April 2013
Database: Compendex
14. Number-resolved master equation approach to quantum transport under the self-consistent Born
approximation
Liu, Yu (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Jin, Jinshuang; Li, Jun; Li, Xinqi; Yan, Yijing Source:
Science China: Physics, Mechanics and Astronomy, v 56, n 10, p 1866-1873, October 2013
Database: Compendex
15. A low-power column-parallel ADC for high-speed CMOS image sensor
Han, Ye (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing 100083, China); Li, Quanliang; Shi, Cong; Liu, Liyuan; Wu,
Nanjian Source: Proceedings of SPIE - The International Society for Optical Engineering, v 8908, 2013,
International Symposium on Photoelectronic Detection and Imaging 2013: Imaging Sensors and
Applications
Database: Compendex
16. Rechargeable mg-ion batteries based on WSe2 nanowire cathodes
Liu, Bin (Wuhan National Laboratory for Optoelectronics (WNLO), College of Optical and Electronic
Information, Huazhong University of Science and Technology (HUST), Wuhan 430074, China); Luo, Tao;
Mu, Guangyuan; Wang, Xianfu; Chen, Di; Shen, Guozhen Source: ACS Nano, v 7, n 9, p 8051-8058,
September 24, 2013
Database: Compendex
17. High efficient GaN-based laser diodes with tunnel junction
Feng, M.X. (Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou
215123, China); Liu, J.P.; Zhang, S.M.; Jiang, D.S.; Li, Z.C.; Zhou, K.; Li, D.Y.; Zhang, L.Q.; Wang, F.;
Wang, H.; Chen, P.; Liu, Z.S.; Zhao, D.G.; Sun, Q.; Yang, H. Source: Applied Physics Letters, v 103, n 4,
July 22, 2013
Database: Compendex
18. Designment of a novel optical streak camera with ultrahigh temporal resolution
Wei, Huiyue (Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang,
Sichuan 621900, China); Xu, Tao; Wang, Feng; Peng, Xiaoshi; Wei, Xin; Liu, Shenye Source: Guangxue
Xuebao/Acta Optica Sinica, v 33, n 8, p 0823003, August 2013 Language: Chinese
Database: Compendex
19. Low-threshold, high SMSR tunable external cavity quantum cascade laser around 4.7 μ m
Tan, S. (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Zhang, J.C.; Zhuo, N.; Wang, L.J.; Liu, F.Q.; Yao, D.Y.; Liu,
J.Q.; Wang, Z.G. Source: Optical and Quantum Electronics, v 45, n 11, p 1147-1155, 2013
Database: Compendex
20. N-polar GaN etching and approaches to quasi-perfect micro-scale pyramid vertical light-emitting
diodes array
Wang, Liancheng (Semiconductor Lighting Technology Research and Development Center, Institute of
Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Ma, Jun; Liu, Zhiqiang; Yi,
Xiaoyan; Yuan, Guodong; Wang, Guohong Source: Journal of Applied Physics, v 114, n 13, 2013
Database: Compendex
21. Electronic structure of twisted bilayer graphene
Wu, Jiang-Bin (The State Key Laboratory of Superlattices and Microstructures, Institute of
Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zhang, Xin; Tan, Ping-Heng;
Feng, Zhi-Hong; Li, Jia Source: Wuli Xuebao/Acta Physica Sinica, v 62, n 15, August 5, 2013 Language:
Chinese
Database: Compendex
22. Two-band finite difference method for the bandstructure calculation with nonparabolicity effects in
quantum cascade lasers
Ma, Xunpeng (Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Li,
Kangwen; Zhang, Zuyin; Hu, Haifeng; Wang, Qing; Wei, Xin; Song, Guofeng Source: Journal of Applied
Physics, v 114, n 6, August 14, 2013
Database: Compendex
23. From the ZnO hollow cage clusters to zno nanoporous phases: A first-principles bottom-up prediction
Liu, Zhifeng (College of Physics, Chongqing University, Chongqing 401331, China); Wang, Xinqiang; Cai,
Jiangtao; Liu, Gaobin; Zhou, Ping; Wang, Kan; Zhu, Hengjiang Source: Journal of Physical Chemistry C,
v 117, n 34, p 17633-17643, August 29, 2013
Database: Compendex
24. Analysis model for efficiency droop of InGaN light-emitting diodes based on reduced effective volume
of active region by carrier localization
Li, Hongjian (R and D Center for Semiconductor Lighting, Institute of Semiconductors, Chinese Academy
of Sciences, Beijing 100083, China); Li, Panpan; Kang, Junjie; Li, Zhi; Zhang, Yiyun; Liang, Meng; Li,
Zhicong; Li, Jing; Yi, Xiaoyan; Wang, Guohong Source: Applied Physics Express, v 6, n 9, September
2013
Database: Compendex
25. A 10-bit column-parallel cyclic ADC for high-speed CMOS image sensors
Han, Ye (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing 100083, China); Li, Quanliang; Shi, Cong; Wu, Nanjian Source:
Journal of Semiconductors, v 34, n 8, August 2013
Database: Compendex
26. Photonic MMW-UWB signal generation via DPMZM-based frequency up-conversion
Li, Wei (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Wang, Li Xian; Zheng, Jian Yu; Li, Ming; Zhu, Ning Hua
Source: IEEE Photonics Technology Letters, v 25, n 19, p 1875-1878, 2013
Database: Compendex
27. Single phase modulator for binary phase-coded microwave signals generation
Li, Wei (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Wang, Li Xian; Li, Ming; Zhu, Ning Hua Source: IEEE
Photonics Technology Letters, v 25, n 19, p 1867-1870, 2013
Database: Compendex
28. MBE growth of 2.3m InGaAsSb/AlGaAsSb strained multiple quantum well diode lasers
Zhang, Tiancheng (National Key Laboratory on High Power Semiconductor Laser, Changchun University
of Science and Technology, Changchun 130022, China); Ni, Qinfei; Liu, Xuezhen; Yu, Bin; Wang, Yuxia;
Zhang, Yu; Ma, Xunpeng; Wang, Yongbin; Xu, Yun Source: Key Engineering Materials, v 552, p 389-392,
2013, Advances in Optics Manufacture
Database: Compendex
29. Double-layer anti-reflection coating containing a nanoporous anodic aluminum oxide layer for GaAs
solar cells
Yang, Tianshu (Engineering Research Center for Semiconductor Integrated Technology, Institute of
Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Wang, Xiaodong; Liu, Wen; Shi,
Yanpeng; Yang, Fuhua Source: Optics Express, v 21, n 15, p 18207-18215, July 29, 2013
Database: Compendex
30. Molecular beam epitaxy growth of high electron mobility InAs/AlSb deep quantum well structure
Wang, Juan (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors,
Chinese Academy of Sciences, PO Box 912, Beijing 100083, China); Wang, Guo-Wei; Xu, Ying-Qiang;
Xing, Jun-Liang; Xiang, Wei; Tang, Bao; Zhu, Yan; Ren, Zheng-Wei; He, Zhen-Hong; Niu, Zhi-Chuan
Source: Journal of Applied Physics, v 114, n 1, July 7, 2013
Database: Compendex
31. InAs-mediated growth of vertical InSb nanowires on Si substrates
Li, Tianfeng (Department of Physics, School of Physics and Electronics, Henan University, Kaifeng
475004, China); Gao, Lizhen; Lei, Wen; Guo, Lijun; Pan, Huayong; Yang, Tao; Chen, Yonghai; Wang,
Zhanguo Source: Nanoscale Research Letters, v 8, n 1, 2013
Database: Compendex
32. A sphere-cut-splice crossover for the evolution of cluster structures
Chen, Zhanghui (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors,
Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Jiang, Xiangwei; Li, Jingbo; Li,
Shushen Source: Journal of Chemical Physics, v 138, n 21, June 7, 2013
Database: Compendex
33. Ab initio theoretical and photoemission studies on formation of 4H-SiC(0 0 0 1)/SiO2 interface
Zheng, Liu (Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Sun, Guosheng; Zhang, Feng; Liu, Shengbei; Liu, Bin;
Dong, Lin; Wang, Lei; Zhao, Wanshun; Liu, Xingfang; Yan, Guoguo; Tian, Lixin; Zeng, Yiping Source:
Applied Surface Science, v 280, p 500-503, September 1, 2013
Database: Compendex
34. Flexible asymmetric supercapacitors based upon Co9S8 nanorod//Co3O4@RuO2 nanosheet arrays
on carbon cloth
Xu, Jing (Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and Electronic
Information, Huazhong University of Science and Technology (HUST), Wuhan 430074, China); Wang,
Qiufan; Wang, Xiaowei; Xiang, Qingyi; Liang, Bo; Chen, Di; Shen, Guozhen Source: ACS Nano, v 7, n 6,
p 5453-5462, June 25, 2013
Database: Compendex
35. Spontaneous quasi-periodic current self-oscillations in a weakly coupled GaAs/(Al,Ga)As superlattice
at room temperature
Huang, Yuyang (Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, No.
398, Ruoshui Rd, 215123 Suzhou, China); Li, Wen; Ma, Wenquan; Qin, Hua; Grahn, Holger T.; Zhang,
Yaohui Source: Applied Physics Letters, v 102, n 24, June 17, 2013
Database: Compendex
36. Numerical study of radial temperature distribution in the AlN sublimation growth system
Li, Huijie (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese
Academy of Sciences, P.O. Box 912, Beijing, 100083, China); Liu, Xianglin; Feng, Yuxia; Wei, Hongyuan;
Yang, Shaoyan Source: Crystal Research and Technology, v 48, n 5, p 321-327, May 2013
Database: Compendex
37. The single-longitudinal-mode operation of a ridge waveguide laser based on two-dimensional
photonic crystals
Wang, Hua-Yong (State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing 100083, China); Xu, Xing-Sheng Source: Chinese Physics B, v
22, n 5, May 2013
Database: Compendex
38. Development of silicon photonic devices for optical interconnects
Xiao, Xi (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Li, Zhiyong; Chu, Tao; Xu, Hao; Li, Xianyao; Nemkova,
Anastasia; Kang, Xiong; Yu, Yude; Yu, Jinzhong Source: Science China Technological Sciences, v 56, n
3, p 586-593, March 2013
Database: Compendex
39. Output characteristics of square and circular resonator microlasers connected with two output
waveguides
Huang, Yongzhen (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing 100083, China); Lü, Xiaomeng; Lin, Jiandong; Du, Yun Source:
Science China Technological Sciences, v 56, n 3, p 538-542, March 2013
Database: Compendex
40. Shock-induced brittle cracking in HVPE-GaN processed by laser lift-off techniques
Su, X.J. (Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou
215123, China); Xu, K.; Xu, Y.; Ren, G.Q.; Zhang, J.C.; Wang, J.F.; Yang, H. Source: Journal of Physics
D: Applied Physics, v 46, n 20, May 22, 2013
Database: Compendex
41. Single InAs quantum dot coupled to different "environments" in one wafer for quantum photonics
Yu, Ying (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors,
Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Shang, Xiang-Jun; Li, Mi-Feng;
Zha, Guo-Wei; Xu, Jian-Xing; Wang, Li-Juan; Wang, Guo-Wei; Ni, Hai-Qiao; Dou, Xiuming; Sun,
Baoquan; Niu, Zhi-Chuan Source: Applied Physics Letters, v 102, n 20, May 20, 2013
Database: Compendex
42. 32-site microelectrode modified with Pt black for neural recording fabricated with thin-film silicon
membrane
Chen, SanYuan (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing, 100083, China); Pei, WeiHua; Zhao, Hui; Gui, Qiang; Tang,
RongYu; Chen, YuanFang; Fang, XiaoLei; Hong, Bo; Gao, XiaoRong; Chen, HongDa Source: Science
China Information Sciences, p 1-7, 2013
Article in Press
Database: Compendex
43. A 0.6-V to 1-V Audio ΔΣ modulator in 65 nm CMOS with 90.2 dB SNDR at 0.6-V
Liu, Liyuan (Tsinghua University, Beijing 100084, China); Li, Dongmei; Wang, Zhihua Source: VLSI
Design, v 2013, 2013
Database: Compendex
44. Characteristics of GaN-based high-voltage LEDs compared to traditional high power LEDs
Zhan, Teng (Semiconductor Lighting Technology Research and Development Center, Institute of
Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zhang, Yang; Ma, Jun; Tian,
Ting; Li, Jing; Liu, Zhiqiang; Yi, Xiaoyan; Guo, Jinxia; Wang, Guohong; Li, Jinmin Source: IEEE
Photonics Technology Letters, v 25, n 9, p 844-847, 2013
Database: Compendex
45. Feed-through cancellation of a MEMS filter using the difference method and analysis of the induced
notch
Han, Guowei (Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Si,
Chaowei; Ning, Jin; Zhong, Weiwei; Sun, Guosheng; Zhao, Yongmei; Yang, Fuhua Source: Journal of
Semiconductors, v 34, n 4, April 2013
Database: Compendex
46. DFB laser array monolithically integrated with MMI combiner and SOA
Ma, Li (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Zhu, Hong-Liang; Liang, Song; Wang, Bao-Jun; Zhang,
Can; Zhao, Ling-Juan; Bian, Jing; Chen, Ming-Hua Source: Guangdianzi Jiguang/Journal of
Optoelectronics Laser, v 24, n 3, p 424-428, March 2013 Language: Chinese
Database: Compendex
47. Electrical and optical inhomogeneity in N-face GaN grown by hydride vapor phase epitaxy
Su, X.J. (Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou
215123, China); Xu, K.; Ren, G.Q.; Wang, J.F.; Xu, Y.; Zeng, X.H.; Zhang, J.C.; Cai, D.M.; Zhou, T.F.; Liu,
Z.H.; Yang, H. Source: Journal of Crystal Growth, v 372, p 43-48, 2013
Database: Compendex
48. Electron transport in a HgTe quantum spin Hall bar with periodic electric modulations
Lin, Liang-Zhong (SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912,
100083 Beijing, China); Cheng, F.; Zhang, D.; Lou, Wen-Kai; Zhang, Le-Bo Source: Solid State
Communications, v 161, p 34-37, May 2013
Database: Compendex
49. EIT and MOLLOW spectrum in N-type four-level system
Li, Xiao-Li (College of Physical Science and Technology, Hebei University, Baoding 071002, China);
Meng, Xu-Dong; Yang, Zi-Cai; Sun, Jiang Source: Guang Pu Xue Yu Guang Pu Fen Xi/Spectroscopy and
Spectral Analysis, v 33, n 3, p 590-594, March 2013 Language: Chinese
Database: Compendex
50. Wavelength and mode-spacing tunable dual-mode distributed bragg reflector laser
Yu, Liqiang (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese
Academy of Science, Beijing 100083, China); Lu, Dan; Zhao, Lingjuan; Li, Yan; Ji, Chen; Pan, Jiaoqing;
Zhu, Hongliang; Wang, Wei Source: IEEE Photonics Technology Letters, v 25, n 6, p 576-579, 2013
Database: Compendex
51. Theoretical simulations of InGaN/Si mechanically stacked two-junction solar cell
Li, Zhidong (Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese
Academy of Sciences, PO Box 912, Beijing 100083, China); Xiao, Hongling; Wang, Xiaoliang; Wang,
Cuimei; Deng, Qingwen; Jing, Liang; Ding, Jieqin; Hou, Xun Source: Physica B: Condensed Matter, v
414, p 110-114, April 1, 2013
Database: Compendex
52. Modulating lateral modes of semiconductor laser by photonic crystal structures
Zhang, Jianxin (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing 100083, China); Liu, Lei; Chen, Wei; Qu, Hongwei; Zheng,
Wanhua Source: Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, v 42, n 1, p 69-72,
January 2013 Language: Chinese
Database: Compendex
53. PDECO: Parallel differential evolution for clusters optimization
Chen, Zhanghui (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors,
Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Jiang, Xiangwei; Li, Jingbo; Li,
Shushen; Wang, Linwang Source: Journal of Computational Chemistry, v 34, n 12, p 1046-1059, May 5,
2013
Database: Compendex
54. Electrical switching of quantum tunneling through p-n junction in a quantum spin Hall bar
Cheng, Fang (Department of Physics and Electronic Science, Changsha University of Science and
Technology, Changsha 410004, China); Lin, L.Z.; Zhang, L.B.; Zhou, Guanghui Source: Journal of
Applied Physics, v 113, n 5, February 7, 2013
Database: Compendex
55. Nitride-based micron-scale hexagonal pyramids array vertical light emitting diodes by N-polar wet
etching
Ma, Jun (Research and Development Center for Semiconductor Lighting, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing 100083, China); Wang, Liancheng; Liu, Zhiqiang; Yuan, Guodong;
Ji, Xiaoli; Ma, Ping; Wang, Junxi; Yi, Xiaoyan; Wang, Guohong; Li, Jinmin Source: Optics Express, v 21,
n 3, p 3547-3556, February 11, 2013
Database: Compendex
56. Pattern classification neural network model based on homologue connectedness
Yang, Guo-Wei (Nanchang Hangkong University, Key Laboratory of Jiangxi Province for Image
Processing and Pattern Recognition, Nanchang, Jiangxi 330063, China); Wang, Shou-Jue; Wei,
Cheng-Bing; Cao, Wen-Yi Source: Tien Tzu Hsueh Pao/Acta Electronica Sinica, v 41, n 1, p 52-55,
January 2013 Language: Chinese
Database: Compendex
57. XOR/XNOR directed logic circuit based on coupled-resonator-induced transparency
Tian, Yonghui (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Zhang, Lei; Xu, Qianfan; Yang, Lin Source: Laser and
Photonics Reviews, v 7, n 1, p 109-113, January 2013
Database: Compendex
58. Effects of light extraction efficiency to the efficiency droop of InGaN-based light-emitting diodes
Zhang, Yiyun (Semiconductor Lighting Technology Research and Development Center, Institute of
Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zheng, Haiyang; Guo, Enqing;
Cheng, Yan; Ma, Jun; Wang, Liancheng; Liu, Zhiqiang; Yi, Xiaoyan; Wang, Guohong; Li, Jinmin Source:
Journal of Applied Physics, v 113, n 1, January 7, 2013
Database: Compendex
59. Enhanced performance of GaN based light-emitting diodes with a low temperature p-GaN hole
injection layer
Li, Hongjian (Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Kang,
Junjie; Li, Panpan; Ma, Jun; Wang, Hui; Liang, Meng; Li, Zhicong; Li, Jing; Yi, Xiaoyan; Wang, Guohong
Source: Applied Physics Letters, v 102, n 1, January 7, 2013
Database: Compendex
60. Influence of Ni and Au/Ni catalysts on GaN nanowire growth
Zhao, Danna (Department of Electronic Science and Technology, Faculty of Electronic Information and
Electrical Engineering, Dalian University of Technology, Dalian 116024, China); Huang, Hui; Wu, Haibo;
Ren, Mingkun; Zhu, Huichao; Liu, Yan; Sun, Baojuan Source: Physica Status Solidi (A) Applications and
Materials Science, v 210, n 12, p 2689-2692, December 2013
Database: Compendex
61. Phosphor-free, color-tunable monolithic InGaN light-emitting diodes
Li, Hongjian (Semiconductor Lighting R and D Center, Institute of Semiconductors, Chinese Academy of
Sciences, Beijing 100083, China); Li, Panpan; Kang, Junjie; Li, Zhi; Li, Zhicong; Li, Jing; Yi, Xiaoyan;
Wang, Guohong Source: Applied Physics Express, v 6, n 10, October 2013
Database: Compendex
62. Improved open-circuit voltage of silicon nanowires solar cells by surface passivation
Yang, Ping (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Zeng, Xiangbo; Xie, Xiaobing; Zhang, Xiaodong; Li, Hao;
Wang, Zhanguo Source: RSC Advances, v 3, n 47, p 24971-24974, December 21, 2013
Database: Compendex
63. Tunable mode-locked external-cavity quantum-dot laser
Wu, Jian (Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of
Low-dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy
of Sciences, Beijing 100083, China); Jin, Peng; Li, Xin-Kun; Wei, Heng; Wu, Ju; Wang, -Zhan-Guo
Source: Nanophotonics, Nanoelectronics and Nanosensor, N3 2013, p NSu2B.3, 2013, Nanophotonics,
Nanoelectronics and Nanosensor, N3 2013
Database: Compendex
64. Transient thermal characteristics related to catastrophic optical damage in high power AlGaAs/GaAs
laser diodes
Qiao, Yanbin (School of Electronic Information and Control Engineering, Beijing University of Technology,
No.100 Pingleyuan street, 100124 Beijing, China); Feng, Shiwei; Xiong, Cong; Zhu, Hui; Ma, Xiaoyu; Yue,
Yuan Source: Physica Status Solidi (A) Applications and Materials Science, v 210, n 11, p 2379-2383,
November 2013
Database: Compendex
65. On-chip optical matrix-vector multiplier
Yang, Lin (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, P. O. Box 912, Beijing 100083, China); Zhang, Lei; Ji, Ruiqiang Source:
Proceedings of SPIE - The International Society for Optical Engineering, v 8855, 2013, Optics and
Photonics for Information Processing VII
Database: Compendex
66. Analysis of effects of front and back surface dopants on silicon vertical multi-junction solar cell by 2D
numerical simulation
Xing, Yupeng (State Key Lab on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Han, Peide; Wang, Shuai; Liang, Peng; Lou, Shishu;
Zhang, Yuanbo; Hu, Shaoxu; Zhu, Huishi; Mi, Yanhong; Zhao, Chunhua Source: Science China
Technological Sciences, v 56, n 11, p 2798-2807, November 2013, Special Topic on Nano Energy and
Piezotronics (2615-2657) Special Topic on Space Sciences (2658-2689)
Database: Compendex
67. Measurement of thermal refractive index coefficients of nonlinear optical crystal RbBe2BO3F2
Zhai, Naixia (Beijing Center for Crystal Research and Development, Key Laboratory of Functional
Crystals and Laser Technology, Chinese Academy of Sciences, Beijing 100190, China); Wang, Lirong;
Liu, Lijuan; Wang, Xiaoyang; Zhu, Yong; Chen, Chuangtian Source: Optical Materials, v 36, n 2, p
333-336, December 2013
Database: Compendex
68. Integrated waveguide Bragg gratings for microwave photonics signal processing
Burla, Maurizio (Institut National de la Recherche Scientifique-Energie, Materiaux et Telecommunications
(INRS-EMT) 1650 Boulevard Lionel-Boulet, Varennes, QC, J3X 1S2, Canada); Cortes, Luis Romero; Li,
Ming; Wang, Xu; Chrostowski, Lukas; Azana, Jose Source: Optics Express, v 21, n 21, p 25120-25147,
October 21, 2013
Database: Compendex
69. Rapid thermal annealing on GaSb thin films grown by Molecular Beam Epitaxy on GaAs substrates
Hao, Rui Ting (Institute of Solar energy, Yunnan Normal University, Kunming, Yunnan Province,650092,
China); Guo, Jie; Deng, Shu Kang; Liu, Ying; Miao, Yan Mei; Xu, Ying Qiang Source: Advanced Materials
Research, v 787, p 143-147, 2013, Advanced Materials Researches, Engineering and Manufacturing
Technologies in Industry
Database: Compendex
70. Study of data format transform with optical waveguide resonators
Zhang, Li-Bin (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Chen, Shao-Wu; Fei, Yong-Hao; Cao, Tong-Tong; Cao,
Yan-Mei; Lei, Xun Source: Wuli Xuebao/Acta Physica Sinica, v 62, n 19, 2013 Language: Chinese
Database: Compendex
71. Effect of the thickness of Bi2Se3 sheets on the morphologies of Bi2Se3-ZnS nanocomposites and
improved photoresponsive characteristic
Li, Renxiong (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors,
Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China); Wang, Meili; Meng, Xiuqing; Wei,
Zhongming Source: Journal of Materials Science: Materials in Electronics, v 24, n 11, p 4197-4203,
November 2013
Database: Compendex
72. 16-Channel fiber laser sensing system based on phase generated carrier algorithm
Fang, Gaosheng (Optoelectronics System Laboratory, Institute of Semiconductors, Chinese Academy of
Sciences, Beijing 100083, China); Xu, Tuanwei; Li, Fang Source: IEEE Photonics Technology Letters, v
25, n 22, p 2185-2188, 2013
Database: Compendex
73. Adsorption and diffusion of Pb(II) on the kaolinite(001) surface: A density-functional theory study
He, Man-Chao (State Key Laboratory of Geomechanics and Deep Underground Engineering, China
University of Mining and Technology, Beijing 100083, China); Zhao, Jian; Wang, Shuang-Xi Source:
Applied Clay Science, v 85, n 1, p 74-79, November 2013
Database: Compendex
74. Direct generation of broadband chaos by a monolithic integrated semiconductor laser chip
Wu, Jia-Gui (School of Physics, Southwest University, Chongqing 400715, China); Zhao, Ling-Juan; Wu,
Zheng-Mao; Lu, Dan; Tang, Xi; Zhong, Zhu-Qiang; Xia, Guang-Qiong Source: Optics Express, v 21, n 20,
p 23358-23364, October 7, 2013
Database: Compendex
75. Electrical and optical properties of a high-voltage large area blue light-emitting diode
Wang, Wei (Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Science, Suzhou,
Jiangsu 215123, China); Cai, Yong; Huang, Wei; Li, Hai-Ou; Zhang, Bao-Shun Source: Japanese
Journal of Applied Physics, v 52, n 8 PART 2, August 2013, Recent Advances in Nitride Semiconductors
Database: Compendex
76. Effect of arc characteristics on the properties of large size diamond wafer prepared by DC arc plasma
jet CVD
Li, C.M. (School of Materials Science and Engineering, University of Science and Technology Beijing,
Beijing 100083, China); Zhu, R.H.; Liu, J.L.; Chen, L.X.; Guo, J.C.; Hua, C.Y.; Hei, L.F.; Wei, J.J.; Wang,
J.J.; Feng, Z.H.; Guo, H.; Lu, F.X. Source: Diamond and Related Materials, v 39, p 47-52, 2013
Database: Compendex
77. Transmission properties of continuous terahertz waves based on metamaterials
Luo, Jun (College of Science, Huazhong Agricultural University, Wuhan 430070, China); Gong, Jinhui;
Zhang, Xinyu; Ji, An; Xie, Changsheng; Zhang, Tianxu Source: Hongwai yu Jiguang Gongcheng/Infrared
and Laser Engineering, v 42, n 7, p 1743-1747, July 2013 Language: Chinese
Database: Compendex
78. Bipolar characteristics of AlGaN/AlN/GaN/AlGaN double heterojunction structure with AlGaN as
buffer layer
Peng, Enchao (Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese
Academy of Sciences, P.O. Box 912, Beijing 100083, China); Wang, Xiaoliang; Xiao, Hongling; Wang,
Cuimei; Yin, Haibo; Chen, Hong; Feng, Chun; Jiang, Lijuan; Hou, Xun; Wang, Zhanguo Source: Journal
of Alloys and Compounds, v 576, p 48-53, 2013
Database: Compendex
79. Analysis of vertical radiation loss and far-field pattern for microcylinder lasers with an output
waveguide
Lv, Xiao-Meng (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors,
Chinese Academy of Sciences, PO Box 912, Beijing 100083, China); Huang, Yong-Zhen; Yang, Yue-De;
Long, Heng; Zou, Ling-Xiu; Yao, Qi-Feng; Jin, Xin; Xiao, Jin-Long; Du, Yun Source: Optics Express, v 21,
n 13, p 16069-16074, July 1, 2013
Database: Compendex
80. Anisotropic current-controlled magnetization reversal in the ferromagnetic semiconductor (Ga,Mn)As
Li, Yuanyuan (SKLSM, Institute of Semiconductors, CAS, P. O. Box 912, 100083 Beijing, China); Cao,
Y.F.; Wei, G.N.; Li, Yanyong; Ji, Y.; Wang, K.Y.; Edmonds, K.W.; Campion, R.P.; Rushforth, A.W.; Foxon,
C.T.; Gallagher, B.L. Source: Applied Physics Letters, v 103, n 2, July 8, 2013
Database: Compendex
81. Doping and electrical properties of cubic boron nitride thin films: A critical review
Zhang, X.W. (Key Lab of Semiconductor Materials Science, Institute of Semiconductors, CAS, Beijing
100083, People's Republic of China) Source: Thin Solid Films, 2013
Article in Press
Database: Compendex
82. Quantum efficiency enhancement of 530nm InGaN green light-emitting diodes with shallow quantum
well
Li, Hongjian (Semiconductor Lighting R and D Center, Institute of Semiconductors, Chinese Academy of
Sciences, Beijing 100083, China); Li, Panpan; Kang, Junjie; Li, Zhi; Zhang, Yiyun; Li, Zhicong; Li, Jing; Yi,
Xiaoyan; Li, Jinmin; Wang, Guohong Source: Applied Physics Express, v 6, n 5, May 2013
Database: Compendex
83. Effect of co-implantation of nitrogen and fluorine on the fixed positive charge density of the buried
oxide layer in SIMOX SOI materials
Zhang, Bai-Qiang (School of Physics and Technology, University of Jinan, Jinan 250022, China); Zheng,
Zhong-Shan; Yu, Fang; Ning, Jin; Tang, Hai-Ma; Yang, Zhi-An Source: Wuli Xuebao/Acta Physica Sinica,
v 62, n 11, June 5, 2013 Language: Chinese
Database: Compendex
84. Thermal analysis of remote phosphor in LED modules
Dong, Mingzhi (Beijing Research Centre, Delft University of Technology, Beijing 100083, China); Wei, Jia;
Ye, Huaiyu; Yuan, Cadmus; Zhang, Kouchi Source: Journal of Semiconductors, v 34, n 5, May 2013
Database: Compendex
85. Study on improving the compactness of SiO2 thin film by PECVD
Guo, Wen-Tao (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Beijing
100083, China); Tan, Man-Qing; Jiao, Jian; Guo, Xiao-Feng; Sun, Ning-Ning Source: Rengong Jingti
Xuebao/Journal of Synthetic Crystals, v 42, n 4, p 577-581, April 2013 Language: Chinese
Database: Compendex
86. Anomalous circular photogalvanic effect of the spin-polarized two-dimensional electron gas in
Mg0.2Zn0.8O/ZnO heterostructures at room temperature
Duan, J.X. (State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics,
Peking University, Beijing 100871, China); Tang, N.; Ye, J.D.; Mei, F.H.; Teo, K.L.; Chen, Y.H.; Ge, W.K.;
Shen, B. Source: Applied Physics Letters, v 102, n 19, May 13, 2013
Database: Compendex
87. Fast tunable and broadband microwave sweep-frequency source based on photonic technology
Zhu, Ninghua (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Du, Yuanxin; Wu, Xuming; Zheng, Jianyu; Wang, Hui; Liu,
Jianguo Source: Science China Technological Sciences, v 56, n 3, p 612-616, March 2013
Database: Compendex
88. A high power picosecond Nd:YVO4 master oscillator power amplifier system pumped by 880 nm
diodes
Yan, S. (Laboratory of All-solid-state Light Sources, Institute of Semiconductors, Chinese Academy of
Sciences, Beijing 100083, China); Yan, X.; Yu, H.; Zhang, L.; Guo, L.; Sun, W.; Hou, W.; Lin, X. Source:
Laser Physics, v 23, n 7, July 2013
Database: Compendex
89. Hybrid InGaAsP-Si evanescent laser by selective-area metal-bonding method
Yuan, Lijun (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese
Academy of Science, Beijing 100083, China); Tao, Li; Yu, Hongyan; Chen, Weixi; Lu, Dan; Li, Yanping;
Ran, Guangzhao; Pan, Jiaoqing Source: IEEE Photonics Technology Letters, v 25, n 12, p 1180-1183,
2013
Database: Compendex
90. Numerical analysis on quantum dots-in-a-well structures by finite difference method
Gong, Liang (Key Laboratory of Advanced Technique and Fabrication for Weak-Light Nonlinear
Photonics Materials, Ministry of Education, NanKai University, Tianjin 300457, China); Shu, Yong-Chun;
Xu, Jing-Jun; Zhu, Qin-Sheng; Wang, Zhan-Guo Source: Superlattices and Microstructures, v 60, p
311-319, 2013
Database: Compendex
91. Tunable coupling-induced transparency band due to coupled localized electric resonance and
quasiguided photonic mode in hybrid plasmonic system
Liu, Jietao (Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China); Xu,
Binzong; Hu, Haifeng; Zhang, Jing; Wei, Xin; Xu, Yun; Song, Guofeng Source: Optics Express, v 21, n 11,
p 13386-13393, June 3, 2013
Database: Compendex
92. High efficiency broadband polarization converter based on tapered slot waveguide
Fei, Yonghao (State Key Laboratory on Optoelectronics, Institute of Semiconductors, Chinese Academy
of Sciences, Beijing 100083, China); Zhang, Libin; Cao, Tongtong; Cao, Yanmei; Chen, Shaowu Source:
IEEE Photonics Technology Letters, v 25, n 9, p 879-881, 2013
Database: Compendex
93. Elastic properties of tetragonal BiFeO3 from first-principles calculations
Dong, Huafeng (Department of Physics, Tsinghua University, Beijing 100084, China); Chen, Changqing;
Wang, Shanying; Duan, Wenhui; Li, Jingbo Source: Applied Physics Letters, v 102, n 18, May 6, 2013
Database: Compendex
94. Perpendicularly magnetized Mn x Ga films: Promising materials for future spintronic devices,
magnetic recording and permanent magnets
Zhu, Lijun (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors,
Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Zhao, Jianhua Source: Applied
Physics A: Materials Science and Processing, v 111, n 2, p 379-387, May 2013, Spintronics Applications
Database: Compendex
95. Enhanced performance of GaN-based light-emitting diodes with graphene/Ag nanowires hybrid films
Li, Zhi (Semiconductor Lighting Technology Research and Development Center, Institute of
Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Kang, Junjie; Liu, Zhiqiang; Du,
Chengxiao; Lee, Xiao; Li, Xiao; Wang, Liancheng; Yi, Xiaoyan; Zhu, Hongwei; Wang, Guohong Source:
AIP Advances, v 3, n 4, 2013
Database: Compendex
96. Ultraviolet detector based on SrZr0.1Ti0.9O 3 film
Zhang, Min (State Key Laboratory on Integrated Optoelectronics, Jilin University, Changchun 130012,
China); Chen, Yu; Zhang, Haifeng; Chen, Weiyou; Lv, Kaibo; Ruan, Shengping Source: IEEE Electron
Device Letters, v 34, n 3, p 420-422, 2013
Database: Compendex
97. Anomalous electron collimation in HgTe quantum wells with inverted band structure
Zou, Y.L. (Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China); Zhang, L.B.; Song,
J.T. Source: Journal of Physics Condensed Matter, v 25, n 7, February 20, 2013
Database: Compendex
98. Interfacial study and energy-band alignment of annealed Al 2O3 films prepared by atomic layer
deposition on 4H-SiC
Zhang, Feng (Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Sun, Guosheng; Zheng, Liu; Liu, Shengbei; Liu, Bin;
Dong, Lin; Wang, Lei; Zhao, Wanshun; Liu, Xingfang; Yan, Guoguo; Tian, Lixin; Zeng, Yiping Source:
Journal of Applied Physics, v 113, n 4, January 28, 2013
Database: Compendex
99. Vertical cavity surface emitting laser transverse mode and polarization control by elliptical hole
photonic crystal
Cao, Tian (Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of
Education, Beijing 100124, China); Xu, Chen; Xie, Yi-Yang; Kan, Qiang; Wei, Si-Min; Mao, Ming-Ming;
Chen, Hong-Da Source: Chinese Physics B, v 22, n 2, February 2013
Database: Compendex
100. Oxygen pressure manipulations on the metal-insulator transition characteristics of highly (0 1
1)-oriented vanadium dioxide films grown by magnetron sputtering
Yu, Qian (Department of Electronic Engineering, Key Laboratory of Polar Materials and Devices, East
China Normal University, Shanghai 200241, China); Li, Wenwu; Liang, Jiran; Duan, Zhihua; Hu, Zhigao;
Liu, Jian; Chen, Hongda; Chu, Junhao Source: Journal of Physics D: Applied Physics, v 46, n 5, February
6, 2013
Database: Compendex
101. High temperature operation of edge-emitting photonic-crystal distributed-feedback quantum
cascade lasers at λ～7.6 μm
Zhang, J.C. (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Liu, F.Q.; Wang, L.J.; Zhai, S.Q.; Yao, D.Y.; Liu, J.Q.;
Wang, Z.G. Source: Physica E: Low-Dimensional Systems and Nanostructures, v 48, p 42-45, 2013
Database: Compendex
102. CMOS-compatible vertical grating coupler with quasi Mach-Zehnder characteristics
Zhang, Zanyun (State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductor, Chinese
Academy of Sciences, Beijing 100083, China); Huang, Beiju; Cheng, Chuantong; Chen, Hongda Source:
IEEE Photonics Technology Letters, v 25, n 3, p 224-227, 2013
Database: Compendex
103. Influence of Substrate Temperature on Stress and Morphology Characteristics of Co Doped ZnO
Films Prepared by Laser-Molecular Beam Epitaxy
Liu, Yunyan (School of Science, Shandong University of Technology, Zibo 255049, China); Yang,
Shanying; Wei, Gongxiang; Pan, Jiaoqing; Yuan, Yuzhen; Cheng, Chuanfu Source: Journal of Materials
Science and Technology, v 29, n 12, p 1134-1138, December 2013
Database: Compendex
104. A 1.65 μm three-section distributed Bragg reflector (DBR) laser for CH4 gas sensors
Niu, Bin (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Yu, Hongyan; Yu, Liqiang; Zhou, Daibing; Lu, Dan; Zhao,
Lingjuan; Pan, Jiaoqing; Wang, Wei Source: Journal of Semiconductors, v 34, n 10, October 2013
Database: Compendex
105. An FPGA-based phase self-calibration system for micro-current sensor
Chen, Gang (Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Chen,
Xu; Chen, Tianxiang; Gong, Guoliang; Bian, Yi; Lu, Huaxiang Source: Dianli Xitong
Zidonghua/Automation of Electric Power Systems, v 37, n 20, p 102-107, October 25, 2013 Language:
Chinese
Database: Compendex
106. Design of a low-power 433/915-MHz RF front-end with a current-reuse common-gate LNA
Jing, Yiou (Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Lu,
Huaxiang Source: Journal of Semiconductors, v 34, n 10, October 2013
Database: Compendex
107. Effects of high temperature rapid thermal annealing on Ge films grown on Si(001) substrate
Liu, Zhi (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Cheng, Bu-Wen; Li, Ya-Ming; Li, Chuan-Bo; Xue,
Chun-Lai; Wang, Qi-Ming Source: Chinese Physics B, v 22, n 11, November 2013
Database: Compendex
108. XOR/XNOR directed logic circuit based on coupled-resonator-induced transparency
Tian, Yonghui (Institute of Microelectronics, Lanzhou University, Lanzhou, Gansu 730000, China); Zhang,
Lei; Yang, Lin Source: Proceedings of SPIE - The International Society for Optical Engineering, v 8855,
2013, Optics and Photonics for Information Processing VII
Database: Compendex
109. Thermoelectric transport through a quantum dot with a magnetic impurity
Yu, Zhen (College of Engineering, Bohai University, Jinzhou 121013, China); Guo, Yu; Zheng, Jun; Chi,
Feng Source: Chinese Physics B, v 22, n 11, November 2013
Database: Compendex
110. GaN-based light emitting diodes with hybrid micro-nano patterned sapphire substrate
Cheng, Yan (Research and Development Center for Semiconductor Lighting, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing 100083, China); Wang, Liancheng; Zhang, Yiyun; Zheng,
Haiyang; Ma, Jun; Yi, Xiaoyan; Wang, Guohong; Li, Jinmin Source: ECS Solid State Letters, v 2, n 11, p
Q93-Q97, 2013
Database: Compendex
111. A low power 2.4 GHz RF transceiver for ZIGBEE applications
Liu, Weiyang (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing 100083, China); Chen, Jingjing; Wang, Haiyong; Wu, Nanjian
Source: Journal of Circuits, Systems and Computers, v 22, n 9, October 2013
Database: Compendex
112. An interpolation algorithm for image topological deformation based on triangle coordinate system
Zhang, Zhongwei (Laboratory of Artificial Neural Networks, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Xiao, Quan; Wang, Shoujue Source: Jisuanji Fuzhu Sheji
Yu Tuxingxue Xuebao/Journal of Computer-Aided Design and Computer Graphics, v 25, n 11, p
1701-1708, November 2013 Language: Chinese
Database: Compendex
113. Light extraction improvement of InGaN light-emitting diodes with large-area highly ordered ITO
nanobowls photonic crystal via self-assembled nanosphere lithography
Wu, Kui (Semiconductor Lighting Technology Research and Development Center, Institute of
Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zhang, Yiyun; Wei, Tongbo;
Lan, Ding; Sun, Bo; Zheng, Haiyang; Lu, Hongxi; Chen, Yu; Wang, Junxi; Luo, Yi; Li, Jinmin Source: AIP
Advances, v 3, n 9, 2013
Database: Compendex
114. Optical investigation of strong exciton localization in high Al composition AlxGa1-xN alloys
Fan, Shunfei (State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of
Physics, Peking University, Beijing 100871, China); Qin, Zhixin; He, Chenguang; Hou, Mengjun; Wang,
Xinqiang; Shen, Bo; Li, Wei; Wang, Weiying; Mao, Defeng; Jin, Peng; Yan, Jianchang; Dong, Peng
Source: Optics Express, v 21, n 21, p 24497-24503, October 21, 2013
Database: Compendex
115. Magnetic and Gilbert damping properties of L21-Co 2FeAl film grown by molecular beam epitaxy
Qiao, Shuang (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors,
Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Nie, Shuaihua; Zhao, Jianhua;
Huo, Yan; Wu, Yizheng; Zhang, Xinhui Source: Applied Physics Letters, v 103, n 15, October 7, 2013
Database: Compendex
116. Tunable density of two-dimensional electron gas in GaN-based heterostructures: The effects of
buffer acceptor and channel width
Peng, Enchao (Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese
Academy of Sciences, P.O. Box 912, Beijing 100083, China); Wang, Xiaoliang; Xiao, Hongling; Wang,
Cuimei; Yin, Haibo; Chen, Hong; Feng, Chun; Jiang, Lijuan; Qu, Shenqi; Kang, He; Hou, Xun; Wang,
Zhanguo Source: Journal of Applied Physics, v 114, n 15, October 21, 2013
Database: Compendex
117. Compact and low-loss silicon power splitter based on inverse tapers
Li, Xianyao (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, P. O. Box 912, Beijing 100083, China); Xu, Hao; Xiao, Xi; Li, Zhiyong; Yu,
Jinzhong; Yu, Yude Source: Optics Letters, v 38, n 20, p 4220-4223, October 15, 2013
Database: Compendex
118. High-frequency mode-beating in distributed feedback laser with a semiconductor optical amplifier
Pan, Biwei (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese
Academy of Science, Beijing 100083, China); Yu, Liqiang; Zhao, Lingjuan Source: Proceedings - 2013
12th International Conference on Optical Communications and Networks, ICOCN 2013, 2013,
Proceedings - 2013 12th International Conference on Optical Communications and Networks, ICOCN
2013
Database: Compendex
119. New energy storage option: Toward ZnCo2O4 nanorods/nickel foam architectures for
high-performance supercapacitors
Liu, Bin (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing 100083, China); Liu, Boyang; Wang, Qiufan; Wang, Xianfu; Xiang,
Qingyi; Chen, Di; Shen, Guozhen Source: ACS Applied Materials and Interfaces, v 5, n 20, p
10011-10017, 2013
Database: Compendex
120. Note: Simultaneous measurements of magnetization and electrical transport signal by a
reconstructed superconducting quantum interference device magnetometer
Wang, H.L. (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors,
Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Yu, X.Z.; Wang, S.L.; Chen, L.;
Zhao, J.H. Source: Review of Scientific Instruments, v 84, n 8, August 2013
Database: Compendex
121. Effects of matrix layer composition on the structural and optical properties of self-organized InGaN
quantum dots
Li, Z.C. (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, P. O. Box 912, Beijing 100083, China); Liu, J.P.; Feng, M.X.; Zhou, K.; Zhang,
S.M.; Wang, H.; Li, D.Y.; Zhang, L.Q.; Sun, Q.; Jiang, D.S.; Wang, H.B.; Yang, H. Source: Journal of
Applied Physics, v 114, n 9, September 7, 2013
Database: Compendex
122. A grating-coupled external cavity InAs/InP quantum dot laser with 85-nm tuning range
Heng, Wei (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Peng, Jin; Shuai, Luo; Hai-Ming, Ji; Tao, Yang; Xin-Kun,
Li; Jian, Wu; Qi, An; Yan-Hua, Wu; Hong-Mei, Chen; Fei-Fei, Wang; Ju, Wu; Zhan-Guo, Wang; Wei,
Heng; Jin, Peng; Luo, Shuai; Ji, Hai-Ming; Yang, Tao; Li, Xin-Kun; Wu, Jian; An, Qi; Wu, Yan-Hua; Chen,
Hong-Mei; Wang, Fei-Fei; Wu, Ju; Wang, Zhan-Guo Source: Chinese Physics B, v 22, n 9, September
2013
Database: Compendex
123. A programmable computational image sensor for high-speed vision
Yang, Jie (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing 100083, China); Shi, Cong; Long, Xitian; Wu, Nanjian Source:
Proceedings of SPIE - The International Society for Optical Engineering, v 8908, 2013, International
Symposium on Photoelectronic Detection and Imaging 2013: Imaging Sensors and Applications
Database: Compendex
124. Effective hand segmentation and gesture recognition for browsing web pages on a large screen
Chen, Zhanghui (Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing
100083, China); Shen, Huifeng; Lu, Yan; Li, Shipeng Source: Proceedings - IEEE International
Conference on Multimedia and Expo, 2013, 2013 IEEE International Conference on Multimedia and
Expo, ICME 2013
Database: Compendex
125. N-Si-p-Si1-xGex nanowire arrays for thermoelectric power generation
Xu, Bin (Department of Electrical and Electronic Engineering, Imperial College London, Exhibition Road,
London SW7 2AZ, United Kingdom); Li, Chuanbo; Myronov, Maksym; Fobelets, Kristel Source:
Solid-State Electronics, v 83, p 107-112, 2013
Database: Compendex
126. Generation and evolution of the terahertz vortex beam
He, Jingwen (Department of Physics, Beijing Key Lab for THz Spectroscopy and Imaging, Capital Normal
University, No.105 XiSanHuan BeiLu, Beijing 100048, China); Wang, Xinke; Hu, Dan; Ye, Jiasheng; Feng,
Shengfei; Kan, Qiang; Zhang, Yan Source: Optics Express, v 21, n 17, p 20230-20239, August 26, 2013
Database: Compendex
127. A fiber-based implantable multi-optrode array with contiguous optical and electrical sites
Chen, Sanyuan (State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing 100083, China); Pei, Weihua; Gui, Qiang; Chen, Yuanfang; Zhao,
Shanshan; Wang, Huan; Chen, Hongda Source: Journal of Neural Engineering, v 10, n 4, August 2013
Database: Compendex
128. Recent progress in organic-inorganic hybrid solar cells
Fan, Xia (Key Laboratory of Bio-Inspired Smart Interfacial Science and Technology, School of Chemistry
and Environment, Beihang University, Beijing 100191, China); Zhang, Mingliang; Wang, Xiaodong; Yang,
Fuhua; Meng, Xiangmin Source: Journal of Materials Chemistry C, v 1, n 31, p 8694-8709, August 21,
2013
Database: Compendex
129. Synthesis of silver quantum dots decorated TiO2 nanotubes and their incorporation in organic hybrid
solar cells
Tan, Furui (Key Laboratory of Photovoltaic Materials, Department of Physics and Electronics, Hehan
University, Kaifeng 475004 Henan, China); Qu, Shengchun; Zhang, Xingwang; Liu, Kong; Wang,
Zhanguo Source: Journal of Nanoparticle Research, v 15, n 8, 2013
Database: Compendex
130. Electron mobility limited by surface and interface roughness scattering in AlxGa1-xN/GaN quantum
wells
Wang, Jian-Xia (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing 100083, China); Yang, Shao-Yan; Wang, Jun; Liu, Gui-Peng; Li,
Zhi-Wei; Li, Hui-Jie; Jin, Dong-Dong; Liu, Xiang-Lin; Zhu, Qin-Sheng; Wang, Zhan-Guo Source: Chinese
Physics B, v 22, n 7, July 2013
Database: Compendex
131. Photoinduced spin precession in Fe/GaAs(001) heterostructure with low power excitation
Yuan, Haochen (Department of Optical Science and Engineering, Ministry of Education, Fudan University,
Shanghai 200433, China); Gao, Haixia; Gong, Yu; Lu, Jun; Zhang, Xinhui; Zhao, Jianhua; Ren, Yuhang;
Zhao, Haibin; Chen, Liangyao Source: Applied Physics Express, v 6, n 7, July 2013
Database: Compendex
132. Enhanced light emission of light-emitting diodes with silicon oxide nanobowls photonic crystal
without electrical performance damages
Du, Chengxiao (Semiconductor Lighting Technology Research and Development Center, Institute of
Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Geng, Chong; Zheng, Haiyang;
Wei, Tongbo; Chen, Yu; Zhang, Yiyun; Wu, Kui; Yan, Qingfeng; Wang, Junxi; Li, Jinmin Source:
Japanese Journal of Applied Physics, v 52, n 4 PART 1, April 2013
Database: Compendex
133. Epitaxial monolayer MoS2 on mica with novel photoluminescence
Ji, Qingqing (Beijing National Laboratory for Molecular Sciences, Academy for Advanced Interdisciplinary
Studies, Peking University, Beijing 100871, China); Zhang, Yanfeng; Gao, Teng; Zhang, Yu; Ma, Donglin;
Liu, Mengxi; Chen, Yubin; Qiao, Xiaofen; Tan, Ping-Heng; Kan, Min; Feng, Ji; Sun, Qiang; Liu, Zhongfan
Source: Nano Letters, v 13, n 8, p 3870-3877, August 14, 2013
Database: Compendex
134. Effect of delay on the synchronization of weakly coupled neurons via excitatory chemical synapses
Hao, Ping (Tianjin Key Laboratory of Information Sensing and Intelligent Control, Tianjin University of
Technology and Education, Tianjin 300222, China); Li, Ruixue; Che, Yanqiu; Han, Chunxiao Source:
2013 25th Chinese Control and Decision Conference, CCDC 2013, p 2076-2079, 2013, 2013 25th
Chinese Control and Decision Conference, CCDC 2013
Database: Compendex
135. Tunable DFB lasers integrated with Ti thin film heaters fabricated with a simple procedure
Zhang, Can (Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese
Academy of Sciences, P.O. Box 912, Beijing 100083, China); Liang, Song; Zhu, Hongliang; Wang, Wei
Source: Optics and Laser Technology, v 54, p 148-150, 2013
Database: Compendex
136. Dynamics maps and scenario transitions for a semiconductor laser subject to dual-beam optical
injection
AlMulla, Mohammad (Department of Electrical Engineering, University of California at Los Angeles, Los
Angeles, CA 90095, United States); Qi, Xiao-Qiong; Liu, Jia-Ming Source: IEEE Journal on Selected
Topics in Quantum Electronics, v 19, n 4, 2013
Database: Compendex
137. Optimized geometry and electronic structure of graphyne-like silicyne nanoribbons
Pei, Yang (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing 100083, China); Wu, Hai-Bin Source: Chinese Physics B, v 22, n
5, May 2013
Database: Compendex
138. Multi-channel DFB laser array fabricated by SAG with optimized epitaxy conditions
Zhang, Can (Key Laboratory of Semiconductors Materials, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Liang, Song; Ma, Li; Han, Liangshun; Zhu, Hongliang
Source: Chinese Optics Letters, v 11, n 4, April 2013
Database: Compendex
139. Improvement of carrier distribution in dual wavelength light-emitting diodes
Si, Zhao (Research and Development Center for Semiconductor Lighting, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing 100083, China); Wei, Tongbo; Zhang, Ning; Ma, Jun; Wang, Junxi;
Li, Jinmin Source: Journal of Semiconductors, v 34, n 5, May 2013
Database: Compendex
140. Optimization of the emitter region and the metal grid of a concentrator silicon solar cell
Xing, Yupeng (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Han, Peide; Fan, Yujie; Wang, Shuai; Liang, Peng; Ye,
Zhou; Hu, Shaoxu; Li, Xinyi; Lou, Shishu; Zhao, Chunhua; Mi, Yanhong Source: Journal of
Semiconductors, v 34, n 5, May 2013
Database: Compendex
141. 540-meV hole activation energy for GaSb/GaAs quantum dot memory structure using AlGaAs
barrier
Cui, Kai (Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Ma,
Wenquan; Zhang, Yanhua; Huang, Jianliang; Wei, Yang; Cao, Yulian; Guo, Xiaolu; Li, Qiong Source:
IEEE Electron Device Letters, v 34, n 6, p 759-761, 2013
Database: Compendex
142. High-responsivity GeSn short-wave infrared p-i-n photodetectors
Zhang, Dongliang (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing 100083, China); Xue, Chunlai; Cheng, Buwen; Su, Shaojian; Liu,
Zhi; Zhang, Xu; Zhang, Guangze; Li, Chuanbo; Wang, Qiming Source: Applied Physics Letters, v 102, n
14, April 8, 2013
Database: Compendex
143. General stochastic model for algorithm of distribution estimation with conditional probabilities and
Gibbs sampling
Zhang, Fang (Lab. of Neural Networks, Institute of Semiconductor, Chinese Academy of Science, Beijing
100083, China); Lu, Hua-Xiang Source: Kongzhi Lilun Yu Yingyong/Control Theory and Applications, v
30, n 3, p 307-315, March 2013 Language: Chinese
Database: Compendex
144. Effect of doping on the photoluminescence of multilayer Ge quantum dots deposited on Si(001)
substrate
Liu, Zhi (State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Li, Ya-Ming; Xue, Chun-Lai; Cheng, Bu-Wen; Wang,
Qi-Ming Source: Wuli Xuebao/Acta Physica Sinica, v 62, n 7, April 5, 2013 Language: Chinese
Database: Compendex
145. Perpendicularly magnetized τ-MnAl (001) thin films epitaxied on GaAs
Nie, S.H. (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors,
Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Zhu, L.J.; Lu, J.; Pan, D.; Wang,
H.L.; Yu, X.Z.; Xiao, J.X.; Zhao, J.H. Source: Applied Physics Letters, v 102, n 15, April 15, 2013
Database: Compendex
146. Spin transport and accumulation in the persistent photoconductor Al 0.3Ga0.7As
Misuraca, Jennifer (Department of Physics, Florida State University, Tallahassee, FL 32306, United
States); Kim, Joon-Il; Lu, Jun; Meng, Kangkang; Chen, Lin; Yu, Xuezhe; Zhao, Jianhua; Xiong, Peng;
Von Molnár, Stephan Source: Applied Physics Letters, v 102, n 15, April 15, 2013
Database: Compendex
147. Multi-point defect single-fundamental-mode photonic crystal vertical cavity surface emitting laser
Xie, Yi-Yang (Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Ministry of
Education, Beijing 100124, China); Xu, Chen; Kan, Qiang; Wang, Chun-Xia; Chen, Hong-Da Source:
Optics and Laser Technology, v 50, p 130-133, 2013
Database: Compendex
148. Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN
heterostructure field-effect transistors
Cao, Zhi-Fang (School of Physics, Shandong University, Jinan 250100, China); Lin, Zhao-Jun; Lü,
Yuan-Jie; Luan, Chong-Biao; Wang, Zhan-Guo Source: Chinese Physics B, v 22, n 4, April 2013
Database: Compendex
149. Monolayer semiconducting transition metal dichalcogenide alloys: Stability and band bowing
Kang, Jun (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors,
Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Tongay, Sefaattin; Li, Jingbo; Wu,
Junqiao Source: Journal of Applied Physics, v 113, n 14, April 14, 2013
Database: Compendex
150. Temperature-dependent emission shift and carrier dynamics in deep ultraviolet AlGaN/AlGaN
quantum wells
Zeng, Jianping (Semiconductor Lighting R and D Center, Institute of Semiconductors, Chinese Academy
of Sciences, Beijing 100083, China); Li, Wei; Yan, Jianchang; Wang, Junxi; Cong, Peipei; Li, Jinmin;
Wang, Weiying; Jin, Peng; Wang, Zhanguo Source: Physica Status Solidi - Rapid Research Letters, v 7,
n 4, p 297-300, April 2013
Database: Compendex
151. Germanium-tin (GeSn) p-channel MOSFETs fabricated on (100) and (111) surface orientations with
Sub-400 °cSi2H6 passivation
Gong, Xiao (Department of Electrical and Computer Engineering, National University of Singapore,
Singapore 117576, Singapore); Han, Genquan; Bai, Fan; Su, Shaojian; Guo, Pengfei; Yang, Yue; Cheng,
Ran; Zhang, Dongliang; Zhang, Guangze; Xue, Chunlai; Cheng, Buwen; Pan, Jisheng; Zhang, Zheng;
Tok, Eng Soon; Antoniadis, Dimitri; Yeo, Yee-Chia Source: IEEE Electron Device Letters, v 34, n 3, p
339-341, 2013
Database: Compendex
152. Two new methods to improve the lithography precision for SU-8 photoresist on glass substrate
Mao, Xu (Institute of Semiconductors, Chinese Academy of Sciences (CAS), Beijing 100083, China);
Yang, Jinling; Ji, An; Yang, Fuhua Source: Journal of Microelectromechanical Systems, v 22, n 1, p
124-130, 2013
Database: Compendex
153. Highly efficient silicon michelson interferometer modulators
Li, Xianyao (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Xiao, Xi; Xu, Hao; Li, Zhiyong; Chu, Tao; Yu, Jinzhong; Yu,
Yude Source: IEEE Photonics Technology Letters, v 25, n 5, p 407-409, 2013
Database: Compendex
154. Electronic structure and optical properties of InAs/GaSb/AlSb/GaSb superlattice
Lang, Xiao-Li (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors,
CAS, Beijing 100083, China); Xia, Jian-Bai Source: Journal of Applied Physics, v 113, n 4, January 28,
2013
Database: Compendex
155. High-harmonic and single attosecond pulse generation using plasmonic field enhancement in
ordered arrays of gold nanoparticles with chirped laser pulses
Yang, Ying-Ying (Laboratory of Solid State Laser Sources, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing, 100083, China); Scrinzi, Armin; Husakou, Anton; Li, Qian-Guang;
Stebbings, Sarah L.; Sü?mann, Frederik; Yu, Hai-Juan; Kim, Seungchul; Rühl, Eckart; Herrmann,
Joachim; Lin, Xue-Chun; Kling, Matthias F. Source: Optics Express, v 21, n 2, p 2195-2205, January 28,
2013
Database: Compendex
156. Scattering due to large cluster embedded in quantum wells
Liu, Changbo (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese
Academy of Sciences, P.O. Box 912, Beijing 100083, China); Zhao, Guijuan; Liu, Guipeng; Song, Yafeng;
Zhang, Heng; Jin, Dongdong; Li, Zhiwei; Liu, Xianglin; Yang, Shaoyan; Zhu, Qinsheng; Wang, Zhanguo
Source: Applied Physics Letters, v 102, n 5, February 4, 2013
Database: Compendex
157. Polarization of the edge emission from Ag/InGaAsP Schottky plasmonic diode
Wang, C. (State Key Laboratory for Mesoscopic Physics, Peking University, School of Physics, Beijing
100871, China); Qu, H.J.; Chen, W.X.; Ran, G.Z.; Yu, H.Y.; Niu, B.; Pan, J.Q.; Wang, W. Source: Applied
Physics Letters, v 102, n 6, February 11, 2013
Database: Compendex
158. Observation of circular dichroism in (001)-oriented P-I-N InGaAs/GaAs quantum wells without
magnetic field
Yu, J.L. (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese
Academy of Sciences, P.O. Box 912, Beijing 100083, China); Chen, Y.H.; Liu, Y.; Jiang, C.Y.; Ma, H.; Zhu,
L.P.; Qin, X.D. Source: Applied Physics Letters, v 102, n 7, February 18, 2013
Database: Compendex
159. Directed xor/xnor logic gates using U-to-U waveguides and two microring resonators
Tian, Yonghui (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Beijing
100083, China); Zhang, Lei; Yang, Lin Source: IEEE Photonics Technology Letters, v 25, n 1, p 18-21,
2013
Database: Compendex
160. Conformal coating of parylene for surface anti-adhesion in polydimethylsiloxane (PDMS) double
casting technique
Chen, Yuanfang (State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing 100083, China); Pei, Weihua; Tang, Rongyu; Chen, Sanyuan;
Chen, Hongda Source: Sensors and Actuators, A: Physical, v 189, p 143-150, 2013
Database: Compendex
161. Enhanced light extraction of InGaN LEDs with photonic crystals grown on p-GaN using
selective-area epitaxy and nanospherical-lens photolithography
Zhao, Linghui (Semiconductor Lighting Technology Research and Development Center, Institute of
Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Wei, Tongbo; Wang, Junxi; Yan,
Qingfeng; Zeng, Yiping; Li, Jinmin Source: Journal of Semiconductors, v 34, n 10, October 2013
Database: Compendex
162. Integrated Photo-supercapacitor Based on Bi-polar TiO2 Nanotube Arrays with Selective One-Side
Plasma-Assisted Hydrogenation
Xu, Jing (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors
Chinese Academy of Sciences Beijing 100083 China); Wu, Hui; Lu, Linfeng; Leung, Siu-Fung; Chen, Di;
Chen, Xiaoyuan; Fan, Zhiyong; Shen, Guozhen; Li, Dongdong Source: Advanced Functional Materials,
2013
Article in Press
Database: Compendex
163. Dark blue cerenkov second harmonic generation in the octagonal quasi periodically poled MgO:
LiNbO3
Fan, Xuedong (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, CAS,
Beijing, 100083, China); Ma, Chuanlong; Zheng, Wanhua Source: CLEO: Science and Innovations,
CLEO_SI 2013, p JW2A.12, 2013, CLEO: Science and Innovations, CLEO_SI 2013
Database: Compendex
164. Impedance immunosensor based on interdigitated array microelectrodes for rapid detection of avian
influenza virus subtype H5
Yan, Xiaofei (Key Laboratory on Modern Precision Agriculture System Integration Research, Ministry of
Education, China Agricultural University, Beijing 100083, China); Wang, Ronghui; Lin, Jianhan; Li,
Yuntao; Wang, Maohua; An, Dong; Jiao, Peirong; Liao, Ming; Yu, Yude; Li, Yanbin Source: Sensor
Letters, v 11, n 6-7, p 1256-1260, June 2013
Database: Compendex
165. Widely tunable single-bandpass microwave photonic filter based on polarization processing of a
nonsliced broadband optical source
Wang, Hui (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Zheng, Jian Yu; Li, Wei; Wang, Li Xian; Li, Ming; Xie,
Liang; Zhu, Ning Hua Source: Optics Letters, v 38, n 22, p 4857-4860, November 15, 2013
Database: Compendex
166. Dark blue cerenkov second harmonic generation in the octagonal quasi periodically poled MgO:
LiNbO3
Fan, Xuedong (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, CAS,
Beijing, 100083, China); Ma, Chuanlong; Zheng, Wanhua Source: CLEO: QELS_Fundamental Science,
CLEO:QELS FS 2013, p JW2A.12, 2013, CLEO: QELS_Fundamental Science, CLEO:QELS FS 2013
Database: Compendex
167. A 1319nm diode-side-pumped Nd:YAG laser Q-switched with graphene oxide
Zhang, Ling (Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy
of Sciences, Beijing 100083, China); Yu, Haijuan; Yan, Shilian; Zhao, Weifang; Sun, Wei; Yang, Yingying;
Wang, Lirong; Hou, Wei; Lin, Xuechun; Wang, Yonggang; Wang, Yishan Source: Journal of Modern
Optics, v 60, n 15, p 1287-1289, 2013
Database: Compendex
168. Uni-traveling-carrier double heterojunction phototransistor photodetector
Huo, Wen-Juan (College of Electronic Information and Control Engineering, Beijing University of
Technology, Beijing 100124, China); Xie, Hong-Yun; Liang, Song; Zhang, Wan-Rong; Jiang, Zhi-Yun;
Chen, Xiang; Lu, Dong Source: Wuli Xuebao/Acta Physica Sinica, v 62, n 22, November 20, 2013
Language: Chinese
Database: Compendex
169. High-speed and broad optical bandwidth silicon modulator
Xu, Hao (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Li, Xian-Yao; Xiao, Xi; Li, Zhi-Yong; Yu, Yu-De; Yu,
Jin-Zhong Source: Chinese Physics B, v 22, n 11, November 2013
Database: Compendex
170. Metal to semiconductor transition in metallic transition metal dichalcogenides
Li, Yan (State Key Laboratory of Superlattice and Microstructures, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Tongay, Sefaattin; Yue, Qu; Kang, Jun; Wu, Junqiao; Li,
Jingbo Source: Journal of Applied Physics, v 114, n 17, November 7, 2013
Database: Compendex
171. Hexagonal pyramids shaped GaN light emitting diodes array by N-polar wet etching
Ma, Jun (Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Wang,
Liancheng; Liu, Zhiqiang; Yuan, Guodong; Ji, Xiaoli; Ma, Ping; Wang, Junxi; Yi, Xiaoyan; Wang,
Guohong; Li, Jinmin Source: Materials Research Society Symposium Proceedings, v 1538, p 353-359,
2013, Compound Semiconductors: Thin-Film Photovoltaics, LEDs, and Smart Energy Controls
Database: Compendex
172. Improved yellow light emission in the achievement of dichromatic white light emitting diodes
Si, Zhao (Research and Development Center for Semiconductor Lighting, Institute of Semiconductors,
Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Wei, Tongbo; Ma, Jun; Zhang,
Ning; Liu, Zhe; Wei, Xueeheng; Wang, Xiaodong; Lu, Hongxi; Wang, Junxi; Li, Jinmin Source: Materials
Research Society Symposium Proceedings, v 1538, p 371-375, 2013, Compound Semiconductors:
Thin-Film Photovoltaics, LEDs, and Smart Energy Controls
Database: Compendex
173. Broadband optical beam power splitter for wavelength dependent light circuits on silicon substrates
Li, Zhiyong (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, P.O. Box 912, Beijing, 100083, China); Xing, Jiejiang; Yang, Biao; Yu, Yude
Source: 2013 International Conference on Optoelectronics and Microelectronics, ICOM 2013, p 177-179,
2013, 2013 International Conference on Optoelectronics and Microelectronics, ICOM 2013
Database: Compendex
174. Demonstration of a vertical pin Ge-on-Si photodetector on a wet-etched Si recess
Fang, Qing (Institute of Microelectronics, ASTAR (Agency of Science and Technology Research), 117685
Singapore, Singapore); Jia, Lianxi; Song, Junfeng; Lim, Andy E. J.; Tu, Xiaoguang; Luo, Xianshu; Yu,
Mingbin; Lo, Guoqiang Source: Optics Express, v 21, n 20, p 23325-23330, October 7, 2013
Database: Compendex
175. Single-crystalline metal germanate nanowire-carbon textiles as binder-free, self-supported anodes
for high-performance lithium storage
Li, Wenwu (Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and
Technology, Wuhan 430074, China); Wang, Xianfu; Liu, Bin; Xu, Jing; Liang, Bo; Luo, Tao; Luo, Sijun;
Chen, Di; Shen, Guozhen Source: Nanoscale, v 5, n 21, p 10291-10299, November 7, 2013
Database: Compendex
176. Environmentally stable/self-powered ultraviolet photodetectors with high sensitivity
Yang, Shengxue (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors,
Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Tongay, Sefaattin; Li, Shu-Shen;
Xia, Jian-Bai; Wu, Junqiao; Li, Jingbo Source: Applied Physics Letters, v 103, n 14, 2013
Database: Compendex
177. Theoretical study of transport property in InAsSb quantum well heterostructures
Zhang, Yang (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese
Academy of Sciences, P.O. Box 912, Beijing 100083, China); Zhang, Yuwei; Guan, Min; Cui, Lijie; Wang,
Chengyan; Zeng, Yiping Source: Journal of Applied Physics, v 114, n 15, October 21, 2013
Database: Compendex
178. Suppression of thermal degradation of InGaN/GaN quantum wells in green laser diode structures
during the epitaxial growth
Li, Zengcheng (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors,
Chinese Academy of Sciences, PO Box 912, Beijing 100083, China); Liu, Jianping; Feng, Meixin; Zhou,
Kun; Zhang, Shuming; Wang, Hui; Li, Deyao; Zhang, Liqun; Zhao, Degang; Jiang, Desheng; Wang,
Huaibing; Yang, Hui Source: Applied Physics Letters, v 103, n 15, October 7, 2013
Database: Compendex
179. Effect of V-defects on the performance deterioration of InGaN/GaN multiple-quantum-well
light-emitting diodes with varying barrier layer thickness
Le, L.C. (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, P. O. Box 912, Beijing 100083, China); Zhao, D.G.; Jiang, D.S.; Li, L.; Wu, L.L.;
Chen, P.; Liu, Z.S.; Yang, J.; Li, X.J.; He, X.G.; Zhu, J.J.; Wang, H.; Zhang, S.M.; Yang, H. Source:
Journal of Applied Physics, v 114, n 14, October 14, 2013
Database: Compendex
180. Sub-400 °C Si2H6 passivation, HfO2 gate dielectric, and single TaN metal gate: A common gate
stack technology for In0.7Ga0.3As and Ge1-xSnx CMOS
Gong, Xiao (Department of Electrical and Computer Engineering, National University of Singapore,
117576 Singapore, Singapore); Han, Genquan; Liu, Bin; Wang, Lanxiang; Wang, Wei; Yang, Yue; Kong,
Eugene Yu-Jin; Su, Shaojian; Xue, Chunlai; Cheng, Buwen; Yeo, Yee-Chia Source: IEEE Transactions
on Electron Devices, v 60, n 5, p 1640-1648, 2013
Database: Compendex
181. Adsorption of gas molecules on monolayer MoS2 and effect of applied electric field
Yue, Qu (College of Science, National University of Defense Technology, Changsha 410073, China);
Shao, Zhengzheng; Chang, Shengli; Li, Jingbo Source: Nanoscale Research Letters, v 8, n 1, p 1-7,
2013
Database: Compendex
182. Design and fabrication of a high-performance evanescently coupled waveguide photodetector
Liu, Shao-Qing (State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing 100083, China); Yang, Xiao-Hong; Liu, Yu; Li, Bin; Han, Qin
Source: Chinese Physics B, v 22, n 10, October 2013
Database: Compendex
183. Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN
Wu, L.L. (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, PO Box 912, Beijing 100083, China); Zhao, D.G.; Jiang, D.S.; Chen, P.; Le, L.C.;
Li, L.; Liu, Z.S.; Zhang, S.M.; Zhu, J.J.; Wang, H.; Zhang, B.S.; Yang, H. Source: Semiconductor Science
and Technology, v 28, n 10, October 2013
Database: Compendex
184. Enhanced optical absorption in nanohole-textured silicon thin-film solar cells with rear-located metal
particles
Chen, Yankun (Engineering Research Center for Semiconductor Integrated Technology, Institute of
Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Han, Weihua; Yang, Fuhua
Source: Optics Letters, v 38, n 19, p 3973-3975, October 1, 2013
Database: Compendex
185. Boron nitride nanopores: Highly sensitive DNA single-molecule detectors
Liu, Song (State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing
100871, China); Lu, Bo; Zhao, Qing; Li, Ji; Gao, Teng; Chen, Yubin; Zhang, Yanfeng; Liu, Zhongfan; Fan,
Zhongchao; Yang, Fuhua; You, Liping; Yu, Dapeng Source: Advanced Materials, v 25, n 33, p 4549-4554,
September 6, 2013
Database: Compendex
186. Poly(3,4-ethylenedioxythiophene) (PEDOT) as interface material for improving electrochemical
performance of microneedles array-based dry electrode
Chen, Yuanfang (State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing 100083, China); Pei, Weihua; Chen, Sanyuan; Wu, Xian; Zhao,
Shanshan; Wang, Huan; Chen, Hongda Source: Sensors and Actuators, B: Chemical, v 188, p 747-756,
2013
Database: Compendex
187. RF characteristic of MESFET on H-terminated DC arc jet CVD diamond film
Liu, J.L. (School of Materials Science and Engineering, University of Science and Technology Beijing,
Beijing 100083, China); Li, C.M.; Zhu, R.H.; Guo, J.C.; Chen, L.X.; Wei, J.J.; Hei, L.F.; Wang, J.J.; Feng,
Z.H.; Guo, H.; Lv, F.X. Source: Applied Surface Science, v 284, p 798-803, November 1, 2013
Database: Compendex
188. A high average power single-stage picosecond double-clad fiber amplifier
Sun, W. (Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of
Sciences, Beijing 100083, China); Yu, H.J.; Zhang, L.; Yan, S.L.; Dong, Z.Y.; Han, Z.H.; Hou, W.; Li, J.M.;
Lin, X.C. Source: Laser Physics, v 23, n 9, September 2013
Database: Compendex
189. Low temperature operating In2-xNixO 3 sensors with high response and good selectivity for NO2
gas
Chen, Yu (State Key Laboratory on Integrated Optoelectronics, Changchun 130012, China); Zhu, Linghui;
Feng, Caihui; Liu, Juan; Li, Chao; Wen, Shanpeng; Ruan, Shengping Source: Journal of Alloys and
Compounds, v 581, p 653-658, 2013
Database: Compendex
190. Study on proton irradiation induced defects in GaN thick film
Zhang, Ming-Lan (College of Information Engineering, Hebei University of Technology, Tianjin 300401,
China); Yang, Rui-Xia; Li, Zhuo-Xin; Cao, Xing-Zhong; Wang, Bao-Yi; Wang, Xiao-Hui Source: Wuli
Xuebao/Acta Physica Sinica, v 62, n 11, June 5, 2013 Language: Chinese
Database: Compendex
191. Numerical computation of pyramidal quantum dots with band non-parabolicity
Gong, Liang (Key Laboratory of Advanced Technique and Fabrication for Weak-Light Nonlinear
Photonics Materials, Ministry of Education, NanKai University, Tianjin 300457, China); Shu, Yong-Chun;
Xu, Jing-Jun; Wang, Zhan-Guo Source: Superlattices and Microstructures, v 61, p 81-90, 2013
Database: Compendex
192. Kinetic mechanism of ZnO hexagonal single crystal slices on GaN/sapphire by a layer-by-layer
growth mode
Jia, Guozhi (Tianjin Institute of Urban Construction, Tianjin 300384, China); Lu, Xucen; Hao, Bingxue;
Wang, Xionglong; Li, Yumei; Yao, Jianghong Source: RSC Advances, v 3, n 31, p 12826-12830, August
21, 2013
Database: Compendex
193. Cooling rate dependent lattice rotation in ge on insulators formed by rapid melt growth
Wen, J.J. (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Liu, Z.; L. Li, L.; Li, C.; L. Xue, C.; Zuo, Y.H.; Li, C.B.;
Wang, Q.M.; Cheng, B.W. Source: ECS Solid State Letters, v 2, n 9, p P73-P75, 2013
Database: Compendex
194. Linear optical pulse compression based on temporal zone plates
Li, Bo (Institut National de la Recherche Scientifique - Energie, Matériaux et Télécommunications,
Montréal, QC H5A 1K6, Canada); Li, Ming; Lou, Shuqin; Aza?a, José Source: Optics Express, v 21, n 14,
p 16814-16830, July 15, 2013
Database: Compendex
195. Femtosecond laser pulse induced ultrafast demagnetization in Fe/GaAs thin films
Gong, Y. (Physics and Astronomy, Hunter College of the City University of New York, New York, NY
10065, United States); Kutayiah, A.R.; Cevher, Z.; Zhang, X.H.; Zhao; Ren, Y.H. Source: IEEE
Transactions on Magnetics, v 49, n 7, p 3199-3202, 2013
Database: Compendex
196. Ag@SiO2 core-shell nanoparticles on silicon nanowire arrays as ultrasensitive and ultrastable
substrates for surface-enhanced Raman scattering
Zhang, Chang Xing (State Key Laboratory of Chemical Resource Engineering, School of Science, Beijing
University of Chemical Technology, Beijing 100029, China); Su, Lei; Chan, Yu Fei; Wu, Zheng Long;
Zhao, Yong Mei; Xu, Hai Jun; Sun, Xiao Ming Source: Nanotechnology, v 24, n 33, August 23, 2013
Database: Compendex
197. Preparation and photoluminescence properties of reverse type-I ZnO/PbS core/shell nanorods
He, Zhaohui (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors,
Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Meng, Xiuqing Source: Journal of
Materials Science: Materials in Electronics, v 24, n 9, p 3365-3370, September 2013
Database: Compendex
198. Effect of MoO3-doped PTCDA as buffer layer on the performance of CuPc/C60 solar cells
Guan, Min (Key Laboratory of Semiconductor Materials Science, Chinese Academy of Sciences, P. O.
Box 912, Beijing 100083, China); Cao, Guohua; Chu, Xinbo; Zhang, Yang; Liu, Xingfang; Zeng, Yiping
Source: Physica Status Solidi (A) Applications and Materials Science, v 210, n 6, p 1178-1182, June 2013
Database: Compendex
199. Helicity dependent photocurrent enabled by unpolarized radiation in a GaAs/Al0.3Ga0.7As
two-dimensional electron system
Ma, Hui (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese
Academy of Sciences, 100083 Beijing, China); Jiang, Chongyun; Liu, Yu; Yu, Jinling; Chen, Yonghai
Source: Applied Physics Letters, v 102, n 21, 2013
Database: Compendex
200. Broad-range modulation of light emission in two-dimensional semiconductors by molecular
physisorption gating
Tongay, Sefaattin (Department of Materials Science and Engineering, University of California, Berkeley,
CA 94720, United States); Zhou, Jian; Ataca, Can; Liu, Jonathan; Kang, Jeong Seuk; Matthews, Tyler S.;
You, Long; Li, Jingbo; Grossman, Jeffrey C.; Wu, Junqiao Source: Nano Letters, v 13, n 6, p 2831-2836,
June 12, 2013
Database: Compendex
201. Silicon-on-insulator-based adiabatic splitter with simultaneous tapering of velocity and coupling
Xing, Jiejiang (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, P.O. Box 912, Beijing 100083, China); Xiong, Kang; Xu, Hao; Li, Zhiyong; Xiao, Xi;
Yu, Jinzhong; Yu, Yude Source: Optics Letters, v 38, n 13, p 2221-2223, July 1, 2013
Database: Compendex
202. Electro-optical response analysis of a 40 Gb/s silicon mach-zehnder optical modulator
Ding, Jianfeng (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors,
Chinese Academy of Sciences (CAS), Beijing 100083, China); Ji, Ruiqiang; Zhang, Lei; Yang, Lin Source:
Journal of Lightwave Technology, v 31, n 14, p 2434-2440, 2013, 0b00006481d60bcb
Database: Compendex
203. Dislocation scattering in ZnMgO/ZnO heterostructures
Sang, Ling (Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Yang, Shao Yan; Liu, Gui Peng; Zhao, Gui Juan; Liu,
Chang Bo; Gu, Cheng Yan; Wei, Hong Yuan; Liu, Xiang Lin; Zhu, Qin Sheng; Wang, Zhan Guo Source:
IEEE Transactions on Electron Devices, v 60, n 6, p 2077-2079, 2013
Database: Compendex
204. Four distributed feedback laser array integrated with multimode- interference and semiconductor
optical amplifier
Ma, Li (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Zhu, Hong-Liang; Liang, Song; Zhao, Ling-Juan; Chen,
Ming-Hua Source: Chinese Physics B, v 22, n 5, May 2013
Database: Compendex
205. Sensitive refractive index sensing with good operation angle polarization tolerance using a
plasmonic split-ring resonator array with broken symmetry
Liu, Jie-Tao (Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China); Xu,
Bin-Zong; Xu, Yun; Wei, Xin; Song, Guo-Feng Source: Journal of Physics D: Applied Physics, v 46, n 19,
May 15, 2013
Database: Compendex
206. Optical transition of the charged excitons in InAs single quantum dots
Li, Wen-Sheng (College of Chemical Engineering, Tongliao Professional Education College, Tongliao
028000, China); Sun, Bao-Quan Source: Wuli Xuebao/Acta Physica Sinica, v 62, n 4, February 20, 2013
Language: Chinese
Database: Compendex
207. Sulfur-doped black silicon formed by metal-assist chemical etching and ion implanting
Liu, Kong (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductor, Chinese
Academy of Sciences, Beijing, 100083, China); Qu, Shengchun; Zhang, Xinhui; Tan, Furui; Bi, Yu; Lu,
Shudi; Wang, Zhanguo Source: Applied Physics A: Materials Science and Processing, p 1-4, 2013
Article in Press
Database: Compendex
208. Tailoring magnetism of multifunctional MnxGa films with giant perpendicular anisotropy
Zhu, L.J. (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors,
Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China); Pan, D.; Nie, S.H.; Lu, J.; Zhao,
J.H. Source: Applied Physics Letters, v 102, n 13, April 1, 2013
Database: Compendex
209. Room temperature photoluminescence of Ge-on-insulator structures formed by rapid melt growth
Wen, Juanjuan (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing 100083, China); Liu, Zhi; Li, Leliang; Li, Chong; Xue, Chunlai; Zuo,
Yuhua; Li, Chuanbo; Wang, Qiming; Cheng, Buwen Source: Journal of Applied Physics, v 113, n 14, April
14, 2013
Database: Compendex
210. Raman spectra analysis of GaN:Er films prepared by ion implantation
Tao, Dong-Yan (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing 100083, China); Liu, Chao; Yin, Chun-Hai; Zeng, Yi-Ping Source:
Guang Pu Xue Yu Guang Pu Fen Xi/Spectroscopy and Spectral Analysis, v 33, n 3, p 699-703, March
2013 Language: Chinese
Database: Compendex
211. Optical anisotropy and blue-shift phenomenon in tetragonal BiFeO 3
Dong, Huafeng (Department of Physics, Tsinghua University, Beijing 100084, China); Liu, Hongfei; Wang,
Shanying Source: Journal of Physics D: Applied Physics, v 46, n 13, April 3, 2013
Database: Compendex
212. Spin and orbital splitting in ferromagnetic contacted single wall carbon nanotube devices
Wang, K.Y. (SKLSM, Institute of Semiconductors, P. O. Box 912, Beijing 100083, China); Blackburn, A.M.;
Wang, H.F.; Wunderlich, J.; Williams, D.A. Source: Applied Physics Letters, v 102, n 9, March 4, 2013
Database: Compendex
213. Electron spin dynamics of ferromagnetic Ga1-x Mnx As across the insulator-to-metal transition
Yue, Han (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors,
Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Zhao, Chunbo; Gao, Haixia; Wang,
Hailong; Yu, Xuezhe; Zhao, Jianhua; Zhang, Xinhui Source: Applied Physics Letters, v 102, n 10, March
11, 2013
Database: Compendex
214. A lower power reconfigurable multi-band transceiver for short-range communication
Zhang, Lingwei (Institute of Microelectronics, Tsinghua University, Beijing 100084, China); Chi, Baoyong;
Qi, Nan; Liu, Liyuan; Jiang, Hanjun; Wang, Zhihua Source: Journal of Semiconductors, v 34, n 3, March
2013
Database: Compendex
215. Ultra-compact and fabrication-tolerant polarization rotator based on a bend asymmetric-slab
waveguide
Cao, Tongtong (State Key Laboratory on Optoelectronics, Institute of Semiconductors, Chinese Academy
of Sciences, Beijing 100083, China); Chen, Shaowu; Fei, Yonghao; Zhang, Libin; Xu, Qing-Yang Source:
Applied Optics, v 52, n 5, p 990-996, February 10, 2013
Database: Compendex
216. Annealing effect on magnetic anisotropy in ultrathin (Ga,Mn)As
Li, Yan-Yong (State Key Laboratory of Superlattices and Microstructure, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing 100083, China); Wang, Hua-Feng; Cao, Yu-Fei; Wang, Kai-You
Source: Chinese Physics B, v 22, n 2, February 2013
Database: Compendex
217. Electron spin dynamics study of bulk p-GaAs: The screening effect
Zhao, Chunbo (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors
Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Yan, Tengfei; Ni, Haiqiao; Niu,
Zhichuan; Zhang, Xinhui Source: Applied Physics Letters, v 102, n 1, January 7, 2013
Database: Compendex
218. Ag nanoparticles preparation and their light trapping performance
Bai, Yiming (School of Renewable Energy Engineering, North China Electric Power University, Beijing
102206, China); Wang, Jun; Yin, Zhigang; Chen, Nuofu; Zhang, Xingwang; Fu, Zhen; Yao, Jianxi; Li,
Ning; He, Haiyang; Guli, Mina Source: Science China Technological Sciences, v 56, n 1, p 109-114,
January 2013, Special Topic on NanoScience and Technology
Database: Compendex
219. Fiber optic 3-component seismometer
Jiang, Dongshan (Optoelectronic System Laboratory, Institute of Semiconductors, Chinese Academy of
Science, No. 35, Qing hua East Road, Hai dian District Beijing, 100083, China); Zhang, Wentao; Li, Fang
Source: Proceedings of SPIE - The International Society for Optical Engineering, v 8924, 2013, Fourth
Asia Pacific Optical Sensors Conference
Database: Compendex
220. Low temperature Sn-rich Au - Sn wafer-level bonding
Fang, Zhiqiang (Research Center of Engineering for Semiconductor Integrated Technology, Institute of
Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Mao, Xu; Yang, Jinling; Yang,
Fuhua Source: Journal of Semiconductors, v 34, n 10, October 2013
Database: Compendex
221. Recent progress in perpendicularly magnetized Mn-based binary alloy films
Zhu, Li-Jun (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing 100083, China); Nie, Shuai-Hua; Zhao, Jian-Hua Source:
Chinese Physics B, v 22, n 11, November 2013
Database: Compendex
222. High bandwidth surface-illuminated InGaAs/InP uni-travelling-carrier photodetector
Li, Chong (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Xue, Chun-Lai; Li, Chuan-Bo; Liu, Zhi; Cheng, Bu-Wen;
Wang, Qi-Ming Source: Chinese Physics B, v 22, n 11, November 2013
Database: Compendex
223. Enhanced 1524-nm emission from ge quantum dots in a modified photonic crystal L3 cavity
Zhang, Yong (Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic
Information, Huazhong University of Science and Technology, Wuhan 430074, China); Zeng, Cheng; Li,
Danping; Huang, Zengzhi; Li, Kezheng; Yu, Jinzhong; Li, Juntao; Xu, Xuejun; Maruizumi, Takuya; Xia,
Jinsong Source: IEEE Photonics Journal, v 5, n 5, 2013
Database: Compendex
224. Photovoltaic performance optimization of methyl 4-[6,6]-C61-benzoate based polymer solar cells
with thermal annealing approach
Chi, Dan (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Liu, Chao; Qu, Shengchun; Zhang, Zhi-Guo; Li, Yongjun;
Li, Yuliang; Wang, Jizheng; Wang, Zhanguo Source: Synthetic Metals, v 181, p 117-122, 2013
Database: Compendex
225. AlGaN/GaN Schottky diode fabricated by au free process
Jia, Lifang (Engineering Research Center for Semiconductor Integration Technology, Institute of
Semiconductors, Chinese Academic of Science, Beijing 100083, China); Yan, Wei; Fan, Zhongchao; He,
Zhi; Wang, Xiaodong; Wang, Guohong; Yang, Fuhua Source: IEEE Electron Device Letters, v 34, n 10, p
1235-1237, 2013
Database: Compendex
226. Structural, morphological and magnetic properties of AlGaN thin films co-implanted with Cr and Sm
ions
Gao, Xingguo (School of Science, Shandong Polytechnic University, Jinan 250353, China); Liu, Chao;
Yin, Chunhai; Sun, Lili; Tao, Dongyan; Yang, Cheng; Man, Baoyuan Source: Journal of Magnetism and
Magnetic Materials, v 343, p 65-68, 2013
Database: Compendex
227. High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination
extensions
Zheng, Liu (Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Zhang, Feng; Liu, Sheng-Bei; Dong, Lin; Liu, Xing-Fang;
Fan, Zhong-Chao; Liu, Bin; Yan, Guo-Guo; Wang, Lei; Zhao, Wan-Shun; Sun, Guo-Sheng; He, Zhi; Yang,
Fu-Hua Source: Chinese Physics B, v 22, n 9, September 2013
Database: Compendex
228. Polarization properties of Rayleigh backscattering with a high degree of coherence in single-mode
fibers
Xu, Tuanwei (Optoelectronic System Laboratory, Institute of Semiconductors, Chinese Academy of
Sciences, Beijing 100083, China); Ren, Meizhen; Li, Fang Source: Optik, v 124, n 24, p 6790-6794,
December 2013
Database: Compendex
229. All-metal optical fiber accelerometer with low transverse sensitivity for seismic monitoring
Jiang, Dongshan (Optoelectronic System Laboratory, Institute of Semiconductors, Chinese Academy of
Sciences, Beijing 100083, China); Zhang, Wentao; Li, Fang Source: IEEE Sensors Journal, v 13, n 11, p
4556-4560, 2013
Database: Compendex
230. Abnormal low-temperature behavior of a continuous photocurrent in Bi 2S3 nanowires
Li, Renxiong (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors,
Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China); Yue, Qu; Wei, Zhongming Source:
Journal of Materials Chemistry C, v 1, n 37, p 5866-5871, October 7, 2013
Database: Compendex
231. A novel analytical method for designing microelectromechanical filters
Zhao, H. (Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Luo, W.;
Yang, J.L.; Yang, F.H. Source: Key Engineering Materials, v 562-565, p 1281-1284, 2013, Micro-Nano
Technology XIV
Database: Compendex
232. The structural and magnetic properties of Fe/(Ga, Mn)As heterostructures
Deng, Jiajun (Mathematics and Physics Department, North China Electric Power University, Beijing
102206, China); Chen, Pei; Wang, Wenjie; Hu, Bing; Che, Jiantao; Chen, Lin; Wang, Hailong; Zhao,
Jianhua Source: Journal of Semiconductors, v 34, n 8, August 2013
Database: Compendex
233. Surface saturation control on the formation of wurtzite polytypes in zinc blende SiC nanofilms grown
on Si-(100) substrates
Liu, Xing-Fang (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing 100083, China); Sun, Guo-Sheng; Liu, Bin; Yan, Guo-Guo; Guan,
Min; Zhang, Yang; Zhang, Feng; Dong, Lin; Zheng, Liu; Liu, Sheng-Bei; Tian, Li-Xin; Wang, Lei; Zhao,
Wan-Shun; Zeng, Yi-Ping Source: Chinese Physics B, v 22, n 8, August 2013
Database: Compendex
234. 60 Gbit/s silicon modulators with enhanced electro-optical efficiency
Xiao, Xi (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, P. O. Box 912, Beijing 100083, China); Xu, Hao; Li, Xianyao; Li, Zhiyong; Chu,
Tao; Yu, Jinzhong; Yude, Yu. Source: 2013 Optical Fiber Communication Conference and Exposition and
the National Fiber Optic Engineers Conference, OFC/NFOEC 2013, 2013, 2013 Optical Fiber
Communication Conference and Exposition and the National Fiber Optic Engineers Conference,
OFC/NFOEC 2013
Database: Compendex
235. Researches on the transmission properties of the silicon slot optical waveguides and the
transmission loss measurement
Hong, Jian-Xun (School of Information Engineering, Wuhan University of Technology, Wuhan 430070,
China) Source: Guangdianzi Jiguang/Journal of Optoelectronics Laser, v 24, n 7, p 1286-1290, July 2013
Language: Chinese
Database: Compendex
236. Raman spectra of monoand bi-layer graphenes with ion-induced defects-and its dispersive
frequency on the excitation energy
Li, Qiao-Qiao (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing 100083, China); Han, Wen-Peng; Zhao, Wei-Jie; Lu, Yan; Zhang,
Xin; Tan, Ping-Heng; Feng, Zhi-Hong; Li, Jia Source: Wuli Xuebao/Acta Physica Sinica, v 62, n 13, July 5,
2013 Language: Chinese
Database: Compendex
237. Bandwidth optimization design of a multi degree of freedom MEMS gyroscope
Si, Chaowei (Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China); Han,
Guowei; Ning, Jin; Yang, Fuhua Source: Sensors (Switzerland), v 13, n 8, p 10550-10560, August 2013
Database: Compendex
238. Large enhancement of sub-band-gap light absorption of sulfur hyperdoped silicon by surface dome
structures
Wang, Ke-Fan (Institute for Computational Materials Science, School of Physics and Electronics, Henan
University, Kaifeng 475004, China); Qu, Shengchun; Liu, Dewei; Liu, Kong; Wang, Jian; Zhao, Li; Zhu,
Hongliang; Wang, Zhanguo Source: Materials Letters, v 107, p 50-52, 2013
Database: Compendex
239. Back-illuminated 283 nm AlGaN solar-blind ultraviolet p-i-n photodetector
Wang, Xiaoyong (Nano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of
Sciences, Beijing 100083, China); Chong, Ming; Zhao, Degang; Su, Yanmei Source: Hongwai yu
Jiguang Gongcheng/Infrared and Laser Engineering, v 42, n 4, p 1011-1014, April 2013 Language:
Chinese
Database: Compendex
240. Electron scattering in GaAs/InGaAs quantum wells subjected to an in-plane magnetic field
Jin, Dong-Dong (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors,
Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Yang, Shao-Yan; Zhang, Liu-Wan;
Li, Hui-Jie; Zhang, Heng; Wang, Jian-Xia; Yang, Tao; Liu, Xiang-Lin; Zhu, Qin-Sheng; Wang, Zhan-Guo
Source: Journal of Applied Physics, v 113, n 21, June 7, 2013
Database: Compendex
241. Tunable distributed feedback quantum cascade lasers by a sampled bragg grating
Zhuo, Ning (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Zhang, Jinchuan; Liu, Fengqi; Wang, Lijun; Tan, Song;
Yan, Fangliang; Liu, Junqi; Wang, Zhanguo Source: IEEE Photonics Technology Letters, v 25, n 11, p
1039-1042, 2013
Database: Compendex
242. Effect of polarization on intersubband transition in AlGaN/GaN multiple quantum wells
Chen, G. (State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics,
Peking University, Beijing 100871, China); Li, Z.L.; Wang, X.Q.; Huang, C.C.; Rong, X.; Sang, L.W.; Xu,
F.J.; Tang, N.; Qin, Z.X.; Sumiya, M.; Chen, Y.H.; Ge, W.K.; Shen, B. Source: Applied Physics Letters, v
102, n 19, May 13, 2013
Database: Compendex
243. 980-nm external-cavity passively mode-locked laser with extremely narrow RF linewidth
Ding, Ying (Ultrafast Photonics Group, School of Engineering, Physics and Mathematics, University of
Dundee, Dundee DD1 4HN, United Kingdom); Ji, Wei; Chen, Jingxiang; Zhang, Song; Wang, Xiaoling;
Wang, Huolei; Ni, Haiqiao; Pan, Jiaoping; Cui, Bifeng; Cataluna, Maria Ana Source: Proceedings of SPIE
- The International Society for Optical Engineering, v 8640, 2013, Novel In-Plane Semiconductor Lasers
XII
Database: Compendex
244. Gaas-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge
applications
Li, Jie (Key Laboratory of Instrumentation Science and Dynamic Measurement, North University of China,
Ministry of Education, Shanxi 030051, China); Guo, Hao; Liu, Jun; Tang, Jun; Ni, Haiqiao; Shi, Yunbo;
Xue, Chenyang; Niu, Zhichuan; Zhang, Wendong; Li, Mifeng; Yu, Ying Source: Nanoscale Research
Letters, v 8, n 1, p 1-6, 2013
Database: Compendex
245. Polystyrene-microsphere-assisted patterning of ZnO nanostructures: Growth and characterization
Dong, J.J. (Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy
of Sciences, Beijing 100083, China); Zhang, X.W.; Zhang, S.G.; Tan, H.R.; Yin, Z.G.; Gao, Y.; Wang, J.X.
Source: Journal of Nanoscience and Nanotechnology, v 13, n 2, p 1101-1105, February 2013
Database: Compendex
246. Dielectric and barrier thickness fluctuation scattering in Al 2O3/AlGaN/GaN double heterojunction
high-electron mobility transistors
Ji, Dong (Department of Physics, Beijing Jiaotong University, Beijing 100044, China); Lu, Yanwu; Liu,
Bing; Liu, Guipeng; Zhu, Qinsheng; Wang, Zhanguo Source: Thin Solid Films, v 535, n 1, p 655-658, May
15, 2013
Database: Compendex
247. High-quality Ge1-xSnx alloys grown on Ge(001) substrates by molecular beam epitaxy
Su, Shao-Jian (College of Information Science and Engineering, Huaqiao University, Xiamen 361021,
China); Zhang, Dong-Liang; Zhang, Guang-Ze; Xue, Chun-Lai; Cheng, Bu-Wen; Wang, Qi-Ming Source:
Wuli Xuebao/Acta Physica Sinica, v 62, n 5, March 5, 2013 Language: Chinese
Database: Compendex
248. Photonic-assisted ultrawideband pulse generator with tunable notch filtering based on
polarization-to-intensity conversion
Zheng, Jianyu (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing 100083, China); Zhu, Ninghua; Wang, Hui; Du, Yuanxin; Wang,
Lixian; Liu, Jianguo Source: IEEE Photonics Journal, v 5, n 3, 2013
Database: Compendex
249. Impact of double-cap procedure on the characteristics of InAs/InGaAsP/InP quantum dots grown by
metal-organic chemical vapor deposition
Luo, Shuai (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese
Academy of Sciences, P.O. Box 912, Beijing 100083, China); Ji, Hai-Ming; Yang, Xiao-Guang; Yang, Tao
Source: Journal of Crystal Growth, v 375, p 100-103, 2013
Database: Compendex
250. The magnetic switching process in MBE-grown Co2MnAl Heusler alloy film
Qiao, Shuang (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors,
Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Gao, Haixia; Nie, Shuaihua; Zhao,
Jianhua; Zhang, Xinhui Source: Solid State Communications, v 163, p 33-36, June 2013
Database: Compendex
251. Photoluminescence properties of porous InP filled with ferroelectric polymers
Jia, C.H. (Key Laboratory of Photovoltaic Materials of Henan Province, School of Physics and Electronics,
Henan University, Kaifeng 475004, China); Chen, Y.H.; Jiang, Y.C.; Liu, F.Q.; Qu, S.C.; Zhang, W.F.;
Wang, Z.G. Source: Applied Physics A: Materials Science and Processing, v 111, n 3, p 695-699, June
2013
Database: Compendex
252. Special asymmetric low loss 1×5 optical power splitter
Wang, Liang-Liang (State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing 100083, China); An, Jun-Ming; Wu, Yuan-Da; Wang, Yue; Zhang,
Jia-Shun; Zhang, Xiao-Guang; Pan, Pan; Zhang, Li-Yao; Hu, Xiong-Wei; Zhao, De-Gang Source:
Guangzi Xuebao/Acta Photonica Sinica, v 42, n 3, p 298-302, March 2013 Language: Chinese
Database: Compendex
253. InAs/GaAs submonolayer quantum-dot superluminescent diodes with active multimode
interferometer configuration
Li, Xin-Kun (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Jin, Peng; Liang, De-Chun; Wu, Ju; Wang, Zhan-Guo
Source: Chinese Physics B, v 22, n 4, April 2013
Database: Compendex
254. Chemical trends of magnetic interaction in Mn-doped III-V semiconductors
Peng, Haowei (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors,
Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China); Li, Jingbo; Wei, Su-Huai Source:
Applied Physics Letters, v 102, n 12, March 25, 2013
Database: Compendex
255. 1.82-μm distributed feedback lasers with InGaAs/InGaAsP multiple-quantum wells for a H2O
sensing system
Yu, Hongyan (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Pan, Jiaoqing; Shao, Yongbo; Wang, Baojun; Zhou,
Daibing; Wang, Wei Source: Chinese Optics Letters, v 11, n 3, March 2013
Database: Compendex
256. Optimization for MEMS filter to reduce feed-through and an analysis method based on polar
diagram
Han, Guowei (Research Center of Engineering for Semiconductor Integrated Technology, Institute of
Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Si, Chaowei; Ning, Jing; Zhao,
Yongmei; Sun, Guosheng; Yang, Fuhua Source: Advanced Materials Research, v 677, p 74-78, 2013,
Micro Nano Devices, Structure and Computing Systems II
Database: Compendex
257. Robust 3-component optical fiber accelerometer for seismic monitoring
Jiang, Dongshan (Optoelectronic System Laboratory, Institute of Semiconductors, Chinese Academy of
Science, Beijing 100083, China); Zhang, Faxiang; Zhang, Wentao; Li, Feng; Li, Fang Source: Chinese
Optics Letters, v 11, n 2, February 2013
Database: Compendex
258. Measurement of linewidth enhancement factor for 1.3-μm InAs/GaAs quantum dot lasers
Xiao, Jin-Long (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing 100083, China); Guo, Chu-Cai; Ji, Hai-Ming; Xu, Peng-Fei; Yao,
Qi-Feng; Lv, Xiao-Meng; Zou, Ling-Xiu; Long, Heng; Yang, Tao; Huang, Yong-Zhen Source: IEEE
Photonics Technology Letters, v 25, n 5, p 488-491, 2013
Database: Compendex
259. In-plane optical anisotropy induced by asymmetrically δ-doping in (001) GaAs/AlGaAs quantum
wells studied by reflectance difference spectroscopy
Yu, J.L. (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese
Academy of Sciences, P.O. Box 912, Beijing 100083, China); Chen, Y.H.; Bo, X.; Jiang, C.Y.; Ye, X.L.;
Wu, S.J.; Gao, H.S. Source: Journal of Applied Physics, v 113, n 8, February 28, 2013
Database: Compendex
260. Control of epitaxial relationships of ZnO/SrTiO3 heterointerfaces by etching the substrate surface
Jia, Caihong (Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese
Academy of Science, P.O. Box 912, Beijing 100083, China); Chen, Yonghai; Liu, Xianglin; Yang,
Shaoyan; Zhang, Weifeng; Wang, Zhanguo Source: Nanoscale Research Letters, v 8, n 1, p 1-8, 2013
Database: Compendex
261. Improved photovoltaic performance of silicon nanowire/organic hybrid solar cells by incorporating
silver nanoparticles
Liu, Kong (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductor, Chinese
Academy of Sciences, Beijing 100083, China); Qu, Shengchun; Zhang, Xinhui; Tan, Furui; Wang,
Zhanguo Source: Nanoscale Research Letters, v 8, n 1, p 1-6, 2013
Database: Compendex
262. Raman study on zinc-blende single InAs nanowire grown on Si (111) substrate
Li, Tianfeng (Department of Physics, School of Physics and Electronics, Henan University, Kaifeng
475004, China); Gao, Lizhen; Lei, Wen; Guo, Lijun; Yang, Tao; Chen, Yonghai; Wang, Zhanguo Source:
Nanoscale Research Letters, v 8, n 1, p 1-7, 2013
Database: Compendex
263. Quantum spin Hall effect induced by electric field in silicene
An, Xing-Tao (School of Sciences, Hebei University of Science and Technology, Shijiazhuang, Hebei
050018, China); Zhang, Yan-Yang; Liu, Jian-Jun; Li, Shu-Shen Source: Applied Physics Letters, v 102, n
4, January 28, 2013
Database: Compendex
264. Radial n-i-p structure silicon nanowire-based solar cells on flexible stainless steel substrates
Xie, Xiaobing (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Zeng, Xiangbo; Yang, Ping; Li, Hao; Li, Jingyan; Zhang,
Xiaodong; Wang, Qiming Source: Physica Status Solidi (A) Applications and Materials Science, v 210, n
2, p 341-344, February 2013
Database: Compendex
265. Analysis of solar cells fabricated from UMG-Si purified by a novel metallurgical method
Chen, Teng (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Zhao, Youwen; Dong, Zhiyuan; Liu, Tong; Wang, Jun; Xie,
Hui Source: Semiconductor Science and Technology, v 28, n 1, January 2013
Database: Compendex
266. InGaN-based vertical light-emitting diodes with acid-modified graphene transparent conductor and
highly reflective membrane current blocking layer
Wang, Liancheng (Semiconductor Lighting Technology Research and Development Center, Institute of
Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zhang, Yiyun; Li, Xiao; Liu,
Zhiqiang; Zhang, Lian; Guo, Enqing; Yi, Xiaoyan; Zhu, Hongwei; Wang, Guohong Source: Proceedings
of the Royal Society A: Mathematical, Physical and Engineering Sciences, v 469, n 2151, March 8, 2013
Database: Compendex
267. First-principles study on strontium titanate for visible light photocatalysis
Liu, Hongfei (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors,
Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Dong, Huafeng; Meng, Xiuqing;
Wu, Fengmin Source: Chemical Physics Letters, v 555, p 141-144, January 3, 2013
Database: Compendex
268. Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in
AlGaN/GaN high electron mobility transistors
Li, Huijie (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese
Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China and Beijing Key
Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors,
Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China); Liu, Guipeng;
Wei, Hongyuan; Jiao, Chunmei; Wang, Jianxia; Zhang, Heng; Dong Jin, Dong; Feng, Yuxia; Yang,
Shaoyan; Wang, Lianshan; Zhu, Qinsheng; Wang, Zhan-Guo Source: Applied Physics Letters, v 103, n
23, December 2, 2013
Database: Compendex
269. High-brightness laser arrays integrated with a phase-shifter designed for single-lobe far-field pattern
Zheng, Wanhua (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, CAS,
Beijing, 100083, China); Liu, Lei; Zhang, Jianxin; Ma, Shaodong; Qi, Aiy; Qu, Hongwei; Zhang, Yejin
Source: CLEO: Science and Innovations, CLEO_SI 2013, p CF1F.6, 2013, CLEO: Science and
Innovations, CLEO_SI 2013
Database: Compendex
270. VLSI implementation of MIMO detection for 802.11n using a novel adaptive tree search algorithm
Yao, Heng (Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Jian,
Haifang; Zhou, Liguo; Shi, Yin Source: Journal of Semiconductors, v 34, n 10, October 2013
Database: Compendex
271. Absorption enhancement using nanoneedle array for solar cell
Zhang, Xu (Henan Key Laboratory of Laser and Opto-electric Information Technology, Zhengzhou
University, Henan 450052, China); Sun, Xiao-Hong; Jiang, Liu-Di Source: Applied Physics Letters, v 103,
n 21, November 18, 2013
Database: Compendex
272. Design and optimization of two-dimensional laser source used for projection
Zhang, Yunfang (Optoelectronic Systems Laboratory, Institute of Semiconductor, Chinese Academy of
Sciences, Beijing 100083, China); Li, Hui; Dong, Hui; Kong, Qingshan; Shi, Ancun; Duan, Jingyuan;
Fang, Qing; Liu, Yuliang Source: Zhongguo Jiguang/Chinese Journal of Lasers, v 40, n 10, October 2013
Language: Chinese
Database: Compendex
273. Spectral sculpting of chaotic-UWB signals using a dual-loop optoelectronic oscillator
Zheng, Jianyu (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing 100083, China); Zhu, Ninghua; Wang, Lixian; Li, Ming; Wang, Hui;
Li, Wei; Qi, Xiaoqiong; Liu, Jianguo Source: IEEE Photonics Technology Letters, v 25, n 24, p 2397-2400,
December 15, 2013
Database: Compendex
274. Influence of different annealing temperature and atmosphere on the Ni/Au Ohmic contact to p-GaN
Li, Xiao-Jing (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Zhao, De-Gang; He, Xiao-Guang; Wu, Liang-Liang; Li,
Liang; Yang, Jing; Le, Ling-Cong; Chen, Ping; Liu, Zong-Shun; Jiang, De-Sheng Source: Wuli
Xuebao/Acta Physica Sinica, v 62, n 20, 2013 Language: Chinese
Database: Compendex
275. High-power distributed feedback terahertz quantum cascade lasers
Wang, Tao (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing, 100083, China); Liu, Jun-Qi; Li, Yan-Fang; Chen, Jian-Yan; Liu, Feng-Qi;
Wang, Li-Jun; Zhang, Jin-Chuan; Wang, Zhan-Guo Source: IEEE Electron Device Letters, v 34, n 11, p
1412-1414, 2013
Database: Compendex
276. Sodium titanate nanorod moisture sensor and its sensing mechanism
Zhang, Yupeng (State Key Laboratory on Integrated Optoelectronics, Jilin University, Changchun 130012,
China); Zhang, Ying; Fu, Bo; Li, Wei; Guo, Wenbin; Ruan, Shengping; Liu, Dali; Chen, Yu Source: IEEE
Electron Device Letters, v 34, n 11, p 1424-1426, 2013
Database: Compendex
277. Modeling an antenna-coupled graphene field-effect terahertz detector
Tan, Ren-Bing (Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and
Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China); Qin, Hua; Sun, Jian-Dong; Zhang,
Xiao-Yu; Zhang, Bao-Shun Source: Applied Physics Letters, v 103, n 17, October 21, 2013
Database: Compendex
278. Dependence of InGaN solar cell performance on polarization-induced electric field and carrier
lifetime
Yang, Jing (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Zhao, De-Gang; Jiang, De-Sheng; Liu, Zong-Shun; Chen,
Ping; Li, Liang; Wu, Liang-Liang; Le, Ling-Cong; Li, Xiao-Jing; He, Xiao-Guang; Wang, Hui; Zhu,
Jian-Jun; Zhang, Shu-Ming; Zhang, Bao-Shun; Yang, Hui Source: Chinese Physics B, v 22, n 9,
September 2013
Database: Compendex
279. Nonblocking 4×4 silicon electro-optic switch matrix with push-pull drive
Xing, Jiejiang (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, P.O. Box 912, Beijing 100083, China); Li, Zhiyong; Zhou, Peiji; Xiao, Xi; Yu,
Jinzhong; Yu, Yude Source: Optics Letters, v 38, n 19, p 3926-3929, October 1, 2013
Database: Compendex
280. Design of prototype high speed CMOS image sensors
Cao, Zhong-Xiang (State Key Laboratory of Superlattices and Microstructures, Institute of
Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zhou, Yang-Fan; Li,
Quan-Liang; Qin, Qi; Wu, Nan-Jian Source: Proceedings of SPIE - The International Society for Optical
Engineering, v 8908, 2013, International Symposium on Photoelectronic Detection and Imaging 2013:
Imaging Sensors and Applications
Database: Compendex
281. Elastic properties of VO2 from first-principles calculation
Dong, Huafeng (Department of Physics, Tsinghua University, Beijing 100084, China); Liu, Hongfei
Source: Solid State Communications, v 167, p 1-4, 2013
Database: Compendex
282. Detection of rail corrugation based on fiber laser accelerometers
Huang, Wenzhu (Optoelectronic System Laboratory, Institute of Semiconductors, CAS, Beijing, 100083,
China); Zhang, Wentao; Du, Yanliang; Sun, Baochen; Ma, Huaixiang; Li, Fang Source: Measurement
Science and Technology, v 24, n 9, September 2013
Database: Compendex
283. Electroabsorption modulated DFB lasers fabricated by IFVD-QWI technology
Zhang, Can (Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zhu,
Hong-Liang; Liang, Song; Han, Liang-Shun; Huang, Yong-Guang; Wang, Bao-Jun; Wang, Wei Source:
Guangdianzi Jiguang/Journal of Optoelectronics Laser, v 24, n 8, p 1451-1455, August 2013 Language:
Chinese
Database: Compendex
284. Modulation of Fermi velocities of Dirac electrons in single layer graphene by moiré superlattice
Zou, Q. (Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China); Belle, B.D.; Zhang,
L.Z.; Xiao, W.D.; Yang, K.; Liu, L.W.; Wang, G.Q.; Fei, X.M.; Huang, Y.; Ma, R.S.; Lu, Y.; Tan, P.H.; Guo,
H.M.; Du, S.X.; Gao, H.-J. Source: Applied Physics Letters, v 103, n 11, September 9, 2013
Database: Compendex
285. Photonic generation of binary phase-coded microwave signals with large frequency tunability using
a dual-parallel mach-zehnder modulator
Li, Wei (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Wang, Li Xian; Li, Ming; Wang, Hui; Zhu, Ning Hua
Source: IEEE Photonics Journal, v 5, n 4, 2013
Database: Compendex
286. Recent progress in organic-inorganic hybrid solar cells
Fan, Xia (Key Laboratory of Bio-Inspired Smart Interfacial Science and Technology, Beihang University,
Ministry of Education, Beijing 100191, China); Zhang, Mingliang; Wang, Xiaodong; Yang, Fuhua; Meng,
Xiangmin Source: Journal of Materials Chemistry A, v 1, n 31, p 8694-8709, August 21, 2013
Database: Compendex
287. Texture evolution and grain competition in NiGe Film on Ge(001)
Huang, Wei (Department of Physics, Semiconductor Photonics Research Center, Xiamen University,
Xiamen, Fujian 361005, China); Tang, Mengrao; Wang, Chen; Li, Cheng; Li, Jun; Chen, Songyan; Xue,
Chunlai; Lai, Hongkai Source: Applied Physics Express, v 6, n 7, July 2013
Database: Compendex
288. Carrier-induced silicon waveguide Bragg grating filter based on ion implantation
Fang, Qing (Institute of Microelectronics, A STAR, 11Science Park Road, Science Park II, Singapore
117685, Singapore); Song, Junfeng; Tu, Xiaoguang; Jia, Lianxi; Luo, Xianshu; Yu, Mingbin; Lo, Guo
Qiang Source: 2013 Optical Fiber Communication Conference and Exposition and the National Fiber
Optic Engineers Conference, OFC/NFOEC 2013, 2013, 2013 Optical Fiber Communication Conference
and Exposition and the National Fiber Optic Engineers Conference, OFC/NFOEC 2013
Database: Compendex
289. Improved performance of highly scaled AlGaN/GaN high-electron-mobility transistors using an AlN
back barrier
Kong, Xin (Microwave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese
Academy of Sciences, Beijing 100029, China); Wei, Ke; Liu, Guoguo; Liu, Xinyu; Wang, Cuimei; Wang,
Xiaoliang Source: Applied Physics Express, v 6, n 5, May 2013
Database: Compendex
290. Pyramid array InGaN/GaN core-shell light emitting diodes with homogeneous multilayer graphene
electrodes
Kang, Junjie (Semiconductor Lighting Technology Research and Development Center, Institute of
Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Li, Zhi; Li, Hongjian; Liu,
Zhiqiang; Li, Xiao; Yi, Xiaoyan; Ma, Ping; Zhu, Hongwei; Wang, Guohong Source: Applied Physics
Express, v 6, n 7, July 2013
Database: Compendex
291. Fabrication of volcano-shaped nano-patterned sapphire substrates using colloidal self-assembly
and wet chemical etching
Geng, Chong (Department of Chemistry, State Key Laboratory of New Ceramics and Fine Processing,
Tsinghua University, Beijing 100084, China); Zheng, Lu; Fang, Huajing; Yan, Qingfeng; Wei, Tongbo; Hao,
Zhibiao; Wang, Xiaoqing; Shen, Dezhong Source: Nanotechnology, v 24, n 33, August 23, 2013
Database: Compendex
292. Experimental investigation of quantum Simpson's paradox
Li, Yu-Long (Key Laboratory of Quantum Information, University of Science and Technology of China,
CAS, Hefei 230026, China); Tang, Jian-Shun; Wang, Yi-Tao; Wu, Yu-Chun; Han, Yong-Jian; Li,
Chuan-Feng; Guo, Guang-Can; Yu, Ying; Li, Mi-Feng; Zha, Guo-Wei; Ni, Hai-Qiao; Niu, Zhi-Chuan
Source: Physical Review A - Atomic, Molecular, and Optical Physics, v 88, n 1, July 24, 2013
Database: Compendex
293. Identifying different mechanisms of circular photogalvanic effect in GaAs/Al0.3Ga0.7As two
dimensional electron gas by photo-modulation technique
Ma, Hui (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Jiang, Chongyun; Liu, Yu; Zhu, Laipan; Qin, Xudong;
Chen, Yonghai Source: Applied Physics Letters, v 102, n 23, June 10, 2013
Database: Compendex
294. Interplay between edge and bulk states in silicene nanoribbon
An, Xing-Tao (School of Sciences, Hebei University of Science and Technology, Shijiazhuang, Hebei
050018, China); Zhang, Yan-Yang; Liu, Jian-Jun; Li, Shu-Shen Source: Applied Physics Letters, v 102, n
21, 2013
Database: Compendex
295. The numerical-aperture-dependent optical contrast and thickness determination of ultrathin flakes of
two-dimensional atomic crystals: A case of graphene multilayers
Han, Wen-Peng (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors
Chinese Academy of Sciences, Beijing 100083, China); Shi, Yan-Meng; Li, Xiao-Li; Luo, Shi-Qiang; Lu,
Yan; Tan, Ping-Heng Source: Wuli Xuebao/Acta Physica Sinica, v 62, n 11, June 5, 2013 Language:
Chinese
Database: Compendex
296. Ferromagnetic interfacial interaction and the proximity effect in a Co 2FeAl/(Ga,Mn)As Bilayer
Nie, S.H. (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing 100083, China); Chin, Y.Y.; Liu, W.Q.; Tung, J.C.; Lu, J.; Lin, H.J.;
Guo, G.Y.; Meng, K.K.; Chen, L.; Zhu, L.J.; Pan, D.; Chen, C.T.; Xu, Y.B.; Yan, W.S.; Zhao, J.H. Source:
Physical Review Letters, v 111, n 2, July 9, 2013
Database: Compendex
297. Formation of single crystalline tellurium supersaturated silicon pn junctions by ion implantation
followed by pulsed laser melting
Wang, Xiyuan (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing 100083, China); Huang, Yongguang; Liu, Dewei; Zhu, Xiaoning;
Cui, Xiao; Zhu, Hongliang Source: Journal of Semiconductors, v 34, n 6, June 2013
Database: Compendex
298. Far-field pattern simulation and measurement for unidirectional-emission circular microlasers
Huang, Yong-Zhen (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors,
Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Lv, Xiao-Meng; Long, Heng; Zou,
Ling-Xiu; Yao, Qi-Feng; Yang, Yue-De; Jin, Xin; Tang, Ming-Ying; Xiao, Jin-Long; Du, Yun Source:
Proceedings of SPIE - The International Society for Optical Engineering, v 8600, 2013, Laser Resonators,
Microresonators, and Beam Control XV
Database: Compendex
299. Multi-channel DFB laser arrays fabricated by SAG technology
Zhang, Can (Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese
Academy of Sciences, P.O. Box 912, Beijing 100083, China); Liang, Song; Zhu, Hongliang; Ma, Li; Wang,
Baojun; Ji, Chen; Wang, Wei Source: Optics Communications, v 300, p 230-235, 2013
Database: Compendex
300. Intrinsic photoinduced anomalous Hall effect in insulating GaAs/AlGaAs quantum wells at room
temperature
Yu, J.L. (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese
Academy of Sciences, P.O. Box 912, Beijing 100083, China); Chen, Y.H.; Liu, Y.; Jiang, C.Y.; Ma, H.; Zhu,
L.P.; Qin, X.D. Source: Applied Physics Letters, v 102, n 20, May 20, 2013
Database: Compendex
301. Performance analysis of vertical multi-junction solar cell with front surface diffusion for high
concentration
Xing, Yupeng (State Key Lab on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Han, Peide; Wang, Shuai; Fan, Yujie; Liang, Peng; Ye,
Zhou; Li, Xinyi; Hu, Shaoxu; Lou, Shishu; Zhao, Chunhua; Mi, Yanhong Source: Solar Energy, v 94, p
8-18, August 2013
Database: Compendex
302. The quantification of quantum nonlocality by characteristic function
Wen, Wei (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing, 100083, China) Source: Science China: Physics, Mechanics and
Astronomy, p 1-5, 2013
Article in Press
Database: Compendex
303. Dielectric and barrier thickness fluctuation scattering in Al 2O3/AlGaN/GaN double heterojunction
high-electron mobility transistors
Ji, Dong (Department of Physics, Beijing Jiaotong University, Beijing 100044, China); Lu, Yanwu; Liu,
Bing; Liu, Guipeng; Zhu, Qinsheng; Wang, Zhanguo Source: Thin Solid Films, v 534, p 655-658, May 1,
2013
Database: Compendex
304. Dependence of the optoelectronic properties of selenium-hyperdoped silicon on the annealing
temperature
Hu, Shaoxu (State Key Lab on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Han, Peide; Mi, Yanhong; Xing, Yupeng; Liang, Peng;
Fan, Yujie Source: Materials Science in Semiconductor Processing, v 16, n 3, p 987-991, June 2013
Database: Compendex
305. Splitting of electromagnetically induced transparency window and appearing of gain due to radio
frequency field
Li, Xiao-Li (College of Physical Science and Technology, Hebei University, Baoding 071002, China);
Shang, Ya-Xuan; Sun, Jiang Source: Wuli Xuebao/Acta Physica Sinica, v 62, n 6, March 20, 2013
Language: Chinese
Database: Compendex
306. Multilayer silver nanoparticles for light trapping in thin film solar cells
Shi, Yanpeng (Engineering Research Center for Semiconductor Integrated Technology, Institute of
Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Wang, Xiaodong; Liu, Wen;
Yang, Tianshu; Xu, Rui; Yang, Fuhua Source: Journal of Applied Physics, v 113, n 17, May 7, 2013
Database: Compendex
307. Influence of strain and electric field on the properties of silicane
Cheng, Gang (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing 100083, China); Liu, Peng-Fei; Li, Zi-Tao Source: Chinese
Physics B, v 22, n 4, April 2013
Database: Compendex
308. 10 × 100 mm 4H-SiC epitaxial growth by warm-wall planetary reactor
Dong, Lin (Material Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
100083, China); Sun, Guosheng; Yu, Jun; Yan, Guoguo; Zhao, Wanshun; Wang, Lei; Zhang, Xinhe; Li,
Xiguang; Wang, Zhanguo Source: Materials Science Forum, v 740-742, p 239-242, 2013, Silicon Carbide
and Related Materials 2012, ECSCRM 2012
Database: Compendex
309. Scattering due to anisotropy of ellipsoid quantum dots in GaAs/InGaAs single quantum well
Jin, Dong-Dong (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors,
Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Jiang, Chao; Li, Guo-Dong; Zhang,
Liu-Wan; Yang, Tao; Liu, Xiang-Lin; Yang, Shao-Yan; Zhu, Qin-Sheng; Wang, Zhan-Guo Source: Journal
of Applied Physics, v 113, n 3, January 21, 2013
Database: Compendex
310. Au-decorated silicene: Design of a high-activity catalyst toward CO oxidation
Li, Chong (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors,
Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Yang, Shengxue; Li, Shu-Shen;
Xia, Jian-Bai; Li, Jingbo Source: Journal of Physical Chemistry C, v 117, n 1, p 483-488, January 10,
2013
Database: Compendex
311. Enhancement of the Curie temperature of ferromagnetic semiconductor (Ga,Mn)As
Wang, Hailong (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing 100083, China); Chen, Lin; Zhao, Jianhua Source: Science China:
Physics, Mechanics and Astronomy, v 56, n 1, p 99-110, January 2013, Special Issue: Spintronics
Database: Compendex
312. Ag-assisted lateral etching of Si nanowires and its application to nanowire transfer
Li, Chuanbo (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Fobelets, Kristel; Liu, Chang; Xue, Chunlai; Cheng,
Buwen; Wang, Qiming Source: Applied Physics Letters, v 103, n 18, October 28, 2013
Database: Compendex
313. Dark blue Cerenkov second harmonic generation in the octagonal quasi periodically poled MgO:
LiNbO3
Fan, Xuedong (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, CAS,
Beijing, 100083, China); Ma, Chuanlong; Zheng, Wanhua Source: CLEO: Applications and Technology,
CLEO_AT 2013, p JW2A.12, 2013, Conference on Lasers and Electro Optics, CLEO: Applications and
Technology, CLEO_AT 2013
Database: Compendex
314. Structural, surface, and electrical properties of nitrogen ion implanted ZnTe epilayers
Yang, Qiumin (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing, 100083, China); Liu, Chao; Cui, Lijie; Zhang, Linen; Zeng, Yiping Source:
Applied Physics A: Materials Science and Processing, p 1-5, 2013
Article in Press
Database: Compendex
315. Carrier-induced silicon waveguide bragg grating filter based on ion implantation
Fang, Qing (Institute of Microelectronics, A STAR, 11Science Park Road, Science Park II, 117685,
Singapore); Song, JunFeng; Tu, Xiaoguang; Jia, Lianxi; Luo, Xianshu; Yu, Mingbin; Lo, Guo Qiang
Source: Optical Fiber Communication Conference, OFC 2013, p OTu3C.8, 2013, Optical Fiber
Communication Conference, OFC 2013
Database: Compendex
316. Micro-Raman study on chirped InGaAs-InAlAs superlattices
Hu, Yongzheng (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing 100083, China); Wang, Lijun; Liu, Fengqi; Zhang, Jinchuan; Liu,
Junqi; Wang, Zhanguo Source: Physica Status Solidi (A) Applications and Materials Science, v 210, n 11,
p 2364-2368, November 2013
Database: Compendex
317. Analysis and modeling of localized faceting on 4H-SiC epilayer surfaces
Dong, Lin (Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese
Academy of Sciences, 100083 Beijing, China); Sun, Guosheng; Zheng, Liu; Liu, Xingfang; Zhang, Feng;
Yan, Guoguo; Tian, Lixin; Li, Xiguang; Wang, Zhanguo Source: Physica Status Solidi (A) Applications
and Materials Science, v 210, n 11, p 2503-2509, November 2013
Database: Compendex
318. Electro-optic logic circuits based on silicon microring switches
Yang, Lin (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, P. O. Box 912, Beijing 100083, China); Zhang, Lei; Tian, Yonghui Source:
Proceedings of SPIE - The International Society for Optical Engineering, v 8855, 2013, Optics and
Photonics for Information Processing VII
Database: Compendex
319. Femtosecond laser excitation of multiple spin waves and composition dependence of Gilbert
damping in full-Heusler Co2Fe 1-xMnxAl films
Cheng, Chuyuan (State-Key Laboratory of Optoelectronic Materials and Technologies, School of Physics
and Engineering, Sun Yat-Sen University, Guangzhou 510275, China); Meng, Kangkang; Li, Shufa; Zhao,
Jianhua; Lai, Tianshu Source: Applied Physics Letters, v 103, n 23, December 2, 2013
Database: Compendex
320. Structural and luminescence properties of yellow-emitting NaScSi 2O6:Eu2+ phosphors: Eu2+ Site
preference analysis and generation of red emission by codoping Mn2+ for white-light-emitting diode
applications
Xia, Zhiguo (School of Materials Sciences and Technology, China University of Geosciences, Beijing
100083, China); Zhang, Yuanyuan; Molokeev, Maxim S.; Atuchin, Victor V. Source: Journal of Physical
Chemistry C, v 117, n 40, p 20847-20854, October 10, 2013
Database: Compendex
321. A high figure of merit localized surface plasmon sensor based on a gold nanograting on the top of a
gold planar film
Zhang, Zu-Yin (Laboratory of Nano-Optoelectronics, Institute of Semiconductors, Chinese Academy of
Sciences, Beijing 100083, China); Wang, Li-Na; Hu, Hai-Feng; Li, Kang-Wen; Ma, Xun-Peng; Song,
Guo-Feng Source: Chinese Physics B, v 22, n 10, October 2013
Database: Compendex
322. Mechanism of the improvement in microcrystalline silicon solar cells by hydrogen plasma treatment
Li, Jing Yan (State Key Lab on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Zeng, Xiang Bo; Li, Hao; Xie, Xiao Bing; Yang, Ping; Xiao,
Hai Bo; Zhang, Xiao Dong; Wang, Qi Ming Source: Advanced Materials Research, v 773, p 118-123,
2013, Industrial Technologies for Sustainable Development
Database: Compendex
323. Design and experimental research of all-optical scanning device
Wang, Feng (Research Center of Laser Fusion, CAEP, P. O. Box 919-986, Mianyang 621900, China);
Wei, Huiyue; Wei, Xin; Song, Guofeng; Xu, Tao; Peng, Xiaoshi; Liu, Shenye Source: Qiangjiguang Yu
Lizishu/High Power Laser and Particle Beams, v 25, n 9, p 2213-2218, September 2013 Language:
Chinese
Database: Compendex
324. Effect of atomic hydrogen bombardment on the surface conductivity of polycrystalline diamond films
Liu, J.L. (School of Materials Science and Engineering, University of Science and Technology Beijing,
Beijing 100083, PR China); Li, C.M.; Guo, J.C.; Zhu, R.H.; Chen, L.X.; Wei, J.J.; Hei, L.F.; Wang, J.J.;
Feng, Z.H.; Guo, H.; Lv, F.X. Source: Applied Surface Science, 2013
Article in Press
Database: Compendex
325. Acoustic emission source location using a distributed feedback fiber laser rosette
Huang, Wenzhu (Optoelectronic System Laboratory, Institute of Semiconductors, Chinese Academy of
Sciences, Beijing 100083, China); Zhang, Wentao; Li, Fang Source: Sensors (Switzerland), v 13, n 10, p
14041-14054, October 17, 2013
Database: Compendex
326. Research of near-infrared small living animal fluorescence imaging system
Wang, Mao (Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Jiangsu
215123, China); Li, Chunyan; Sun, Yunfei; Li, Min; Zhai, Xiaomin; Wu, Dongmin Source: Guangxue
Xuebao/Acta Optica Sinica, v 33, n 6, June 2013 Language: Chinese
Database: Compendex
327. Sn-rich Au-Sn hermetic packaging at wafer level and its application in SPR sensor
Mao, Xu (Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Fang,
Zhiqiang; Zhang, Zhe; Yang, Jinling; Qi, Zhimei; Yang, Fuhua Source: 8th Annual IEEE International
Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2013, p 244-247, 2013, 8th
Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS
2013
Database: Compendex
328. Two-mode multiplexer and demultiplexer based on adiabatic couplers
Xing, Jiejiang (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, P.O. Box 912, Beijing 100083, China); Li, Zhiyong; Xiao, Xi; Yu, Jinzhong; Yu,
Yude Source: Optics Letters, v 38, n 17, p 3468-3470, September 1, 2013
Database: Compendex
329. Ohmic contact to n-type Ge with compositional Ti nitride
Wu, H.D. (Department of Physics, Semiconductor Photonics Research Center, Xiamen University,
Xiamen, Fujian 361005, China); Huang, W.; Lu, W.F.; Tang, R.F.; Li, C.; Lai, H.K.; Chen, S.Y.; Xue, C.L.
Source: Applied Surface Science, v 284, p 877-880, November 1, 2013
Database: Compendex
330. Optimization of direct modulation rate for circular microlasers by adjusting mode Q factor
Lv, Xiao-Meng (Institute of Semiconductors, Chinese Academy of Sciences, State Key Laboratory on
Integrated Optoelectronics, No. A35, QingHua East Road, Beijing 100083, China); Huang, Yong-Zhen;
Zou, Ling-Xiu; Long, Heng; Du, Yun Source: Laser and Photonics Reviews, v 7, n 5, p 818-829,
September 2013
Database: Compendex
331. An ultra-low-power area-efficient non-volatile memory in a 0.18 μm single-poly CMOS process for
passive RFID tags
Jia, Xiaoyun (State Key Laboratory for Super Lattices and Microstructures, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing 100083, China); Feng, Peng; Zhang, Shengguang; Wu, Nanjian;
Zhao, Baiqin; Liu, Su Source: Journal of Semiconductors, v 34, n 8, August 2013
Database: Compendex
332. Growth and characterization of AlGaN/AlN/GaN/AlGaN double heterojunction structures with AlGaN
as buffer layers
Peng, Enchao (Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese
Academy of Sciences, P. O. Box 912, Beijing 100083, China); Wang, Xiaoliang; Xiao, Hongling; Wang,
Cuimei; Yin, Haibo; Chen, Hong; Feng, Chun; Jiang, Lijuan; Hou, Xun; Wang, Zhanguo Source: Journal
of Crystal Growth, v 383, p 25-29, 2013
Database: Compendex
333. Mechanical and electronic properties of graphyne and its family under elastic strain: Theoretical
predictions
Yue, Qu (College of Science, National University of Defense Technology, Changsha 410073, Hunan
Province, China); Chang, Shengli; Kang, Jun; Qin, Shiqiao; Li, Jingbo Source: Journal of Physical
Chemistry C, v 117, n 28, p 14804-14811, July 18, 2013
Database: Compendex
334. The effects of InGaN layer thickness on the performance of InGaN/GaN p - I - N solar cells
Li, Liang (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Zhao, De-Gang; Jiang, De-Sheng; Liu, Zong-Shun; Chen,
Ping; Wu, Liang-Liang; Le, Ling-Cong; Wang, Hui; Yang, Hui Source: Chinese Physics B, v 22, n 6, June
2013
Database: Compendex
335. Highly efficient coupling between inner and surface fields in photonic crystal waveguides
Yu, Tianbao (Department of Physics, Nanchang University, Nanchang 330031, China); Li, Sizhong; Liu,
Nianhua; Wang, Tongbiao; Liao, Qinghua; Xu, Xuming Source: IEEE Photonics Technology Letters, v 25,
n 15, p 1496-1499, 2013
Database: Compendex
336. Electron energy and angle distribution of GaAs photocathodes
Chen, Zhanghui (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors,
Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Jiang, Xiangwei; Li, Jingbo; Li,
Shushen; Wang, Linwang Source: Journal of Applied Physics, v 114, n 3, July 21, 2013
Database: Compendex
337. Full-field strain mapping at a Ge/Si heterostructure interface
Li, Jijun (College of Science, Inner Mongolia University of Technology, Hohhot 010051, China); Zhao,
Chunwang; Xing, Yongming; Su, Shaojian; Cheng, Buwen Source: Materials, v 6, n 6, p 2130-2142, 2013
Database: Compendex
338. Fabrication of SU8-based chip suitable for genomic sequencing
Han, Wei-Jing (State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Wei, Qing-Quan; Li, Yun-Tao; Zhou, Xiao-Guang; Yu,
Yu-De Source: Wuli Xuebao/Acta Physica Sinica, v 62, n 14, July 20, 2013 Language: Chinese
Database: Compendex
339. Mechanisms in thermal stress aided electroless etching of GaN grown on sapphire and approaches
to vertical devices
Wang, Liancheng (Semiconductor Lighting Technology Research and Development Center, Institute of
Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Liu, Zhiqiang; Zheng, Haiyang;
Zhang, Yiyun; Cheng, Yan; Xie, Haizhong; Rao, Liqiang; Wei, Tongbo; Yang, Hua; Yuan, Guodong; Yi,
Xiaoyan; Wang, Guohong Source: RSC Advances, v 3, n 27, p 10934-10943, 2013
Database: Compendex
340. Low-temperature electron mobility in heavily n-doped junctionless nanowire transistor
Li, Xiaoming (Engineering Research Center for Semiconductor Integration Technology, Institute of
Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Han, Weihua; Wang, Hao; Ma,
Liuhong; Zhang, Yanbo; Du, Yandong; Yang, Fuhua Source: Applied Physics Letters, v 102, n 22, June 3,
2013
Database: Compendex
341. Ordered silicon nanowires prepared by template-assisted morphological design and metal-assisted
chemical etching
Liu, Kong (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductor, Chinese
Academy of Sciences, Beijing 100083, China); Qu, Shengchun; Tan, Furui; Bi, Yu; Lu, Shudi; Wang,
Zhanguo Source: Materials Letters, v 101, p 96-98, 2013
Database: Compendex
342. Why twisting angles are diverse in graphene Moiré patterns?
Jiang, Jin-Wu (Institute of Structural Mechanics, Bauhaus-University Weimar, Marienstr. 15, D-99423
Weimar, Germany); Wang, Bing-Shen; Rabczuk, Timon Source: Journal of Applied Physics, v 113, n 19,
May 21, 2013
Database: Compendex
343. Strain-driven synthesis of self-catalyzed branched GaAs nanowires
Zha, Guowei (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors,
Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Li, Mifeng; Yu, Ying; Wang, Lijuan;
Xu, Jianxing; Shang, Xiangjun; Ni, Haiqiao; Niu, Zhichuan Source: Applied Physics Letters, v 102, n 16,
April 22, 2013
Database: Compendex
344. Flat spectral response of arrayed waveguide grating
Zhang, Li-Yao (State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Wu, Yuan-Da; An, Jun-Ming; Wang, Yue; Wang,
Liang-Liang; Pan, Pan; Zhang, Jia-Shun; Zhang, Xiao-Guang; Hu, Xiong-Wei Source: Guangzi
Xuebao/Acta Photonica Sinica, v 42, n 4, p 379-385, April 2013 Language: Chinese
Database: Compendex
345. Saturation of the junction voltage in GaN-based laser diodes
Feng, M.X. (Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou
215123, China); Liu, J.P.; Zhang, S.M.; Liu, Z.S.; Jiang, D.S.; Li, Z.C.; Wang, F.; Li, D.Y.; Zhang, L.Q.;
Wang, H.; Yang, H. Source: Applied Physics Letters, v 102, n 18, May 6, 2013
Database: Compendex
346. A high speed 1000 fps CMOS image sensor with low noise global shutter pixels
Zhou, YangFan (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing, 100083, China); Cao, ZhongXiang; Qin, Qi; Li, QuanLiang; Shi,
Cong; Wu, NanJian Source: Science China Information Sciences, p 1-8, 2013
Article in Press
Database: Compendex
347. Improvement of the surface quality of semi-insulating InP substrates through a novel etching and
cleaning method
Liu, Jingming (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductor, Chinese
Academy of Science, No. A35, Qinghua East Road, Haidian District, Beijing 100083, China); Zhao,
Youwen; Dong, Zhiyuan; Yang, Fengyun; Wang, Fenghua; Cao, Kewei; Liu, Tong; Xie, Hui; Chen, Teng
Source: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, v 31, n 3, May
2013
Database: Compendex
348. Multiwall nanotubes, multilayers, and hybrid nanostructures: New frontiers for technology and
Raman spectroscopy
Bonaccorso, Francesco (Cambridge Graphene Centre, University of Cambridge, 9 JJ Thomson Avenue,
Cambridge CB3 0FA, United Kingdom); Tan, Ping-Heng; Ferrari, Andrea C. Source: ACS Nano, v 7, n 3,
p 1838-1844, March 26, 2013
Database: Compendex
349. Lateral cavity photonic crystal surface emitting laser based on commercial epitaxial wafer
Wang, Yufei (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, CAS,
Beijing 100083, China); Qu, Hongwei; Zhou, Wenjun; Qi, Aiyi; Zhang, Jianxin; Liu, Lei; Zheng, Wanhua
Source: Optics Express, v 21, n 7, p 8844-8855, April 8, 2013
Database: Compendex
350. Fabrication of tellurium doped silicon detector by femtosecond laser and excimer laser
Wang, Xiyuan (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing 100083, China); Huang, Yongguang; Liu, Dewei; Zhu, Xiaoning;
Wang, Baojun; Zhu, Hongliang Source: Zhongguo Jiguang/Chinese Journal of Lasers, v 40, n 3, March
2013 Language: Chinese
Database: Compendex
351. Distributed feedback fiber laser tuning method based on photo-thermal effect
Zhao, Qiang (National Key Laboratory on High Power Semiconductor Lasers, Changchun University of
Science and Technology, Changchun 130022, China); Wang, Yongjie; Xu, Tuanwei; Dai, Xing; Li, Fang;
Qu, Yi Source: Qiangjiguang Yu Lizishu/High Power Laser and Particle Beams, v 25, n 2, p 355-357,
February 2013 Language: Chinese
Database: Compendex
352. Large area uniform microstructures on silicon surface created with a picosecond laser beam
scanning
Wang, Xiyuan (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors,
Chinese Academy of Science, Beijing 100083, China); Huang, Yongguang; Liu, Dewei; Wang, Baojun;
Zhu, Xiaoning; Zhu, Hongliang Source: Advanced Materials Research, v 651, p 327-332, 2013, 2012
International Conference on Engineering Materials, ICEM 2012
Database: Compendex
353. Slow surface plasmons in plasmonic grating waveguide
Xu, Yun (Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China); Zhang, Jing;
Song, Guofeng Source: IEEE Photonics Technology Letters, v 25, n 5, p 410-413, 2013
Database: Compendex
354. High-speed microwave photonic switch for millimeter-wave ultra-wideband signal generation
Wang, Li Xian (State Key Laboratory on Integrated Optoelectronics, Institution of Semiconductors,
Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Li, Wei; Zheng, Jian Yu; Wang,
Hui; Liu, Jian Guo; Zhu, Ning Hua Source: Optics Letters, v 38, n 4, p 579-581, February 15, 2013
Database: Compendex
355. Analysis of mode coupling and threshold gain control for nanocircular resonators confined by
isolation and metallic layers
Yao, Qi-Feng (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Huang, Yong-Zhen; Zou, Ling-Xiu; Lv, Xiao-Meng; Lin,
Jian-Dong; Yang, Yue-De Source: Journal of Lightwave Technology, v 31, n 5, p 786-792, 2013
Database: Compendex
356. High performance AlGaN/GaN power switch with Si3N4 insulation
Lin, Defeng (Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O.
Box 912, Beijing 100083, China); Wang, Xiaoliang; Xiao, Hongling; Kang, He; Wang, Cuimei; Jiang,
Lijuan; Feng, Chun; Chen, Hong; Deng, Qingwen; Bi, Yang; Zhang, Jingwen; Hou, Xun Source: EPJ
Applied Physics, v 61, n 1, January 2013
Database: Compendex
357. A lithography-independent and fully confined fabrication process of phase-change materials in metal
electrode nanogap with 16-μA threshold current and 80-mV SET voltage
Fu, Yingchun (Engineering Research Center for Semiconductor Integrated Technology, Institute of
Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Wang, Xiaofeng; Zhang,
Jiayong; Wang, Xiaodong; Chang, Chun; Ma, Huili; Cheng, Kaifang; Chen, Xiaogang; Song, Zhitang;
Feng, Songlin; Ji, An; Yang, Fuhua Source: Applied Physics A: Materials Science and Processing, v 110,
n 1, p 173-177, January 2013
Database: Compendex
358. Long-range-ordered Ag nanodot arrays grown on GaAs substrate using nanoporous alumina mask
Liu, Wen (Engineering Research Center for Semiconductor Integrated Technology, Institute of
Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Wang, Xiaodong; Xu, Rui;
Wang, Xiaofeng; Cheng, Kaifang; Ma, Huili; Yang, Fuhua; Li, Jinmin Source: Materials Science in
Semiconductor Processing, v 16, n 1, p 160-164, February 2013
Database: Compendex
359. Polarization division multiplexed photonic radio-frequency channelizer using an optical comb
Xian Wang, Li (State Key Laboratory on Integrated Optoelectronics, Institution of Semiconductors,
Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Hua Zhu, Ning; Li, Wei; Wang, Hui;
Yu Zheng, Jian; Guo Liu, Jian Source: Optics Communications, v 286, n 1, p 282-287, January 1, 2013
Database: Compendex
360. Fiber optic displacement sensor used in railway turnout contact monitoring system
Xu, Hongbin (Optoelectronic System Laboratory, Institute of Semiconductors, Chinese Academy of
Sciences, Beijing 100083, China); Zhang, Wentao; Du, Yanliang; Li, Feng; Li, Fang Source: Proceedings
of SPIE - The International Society for Optical Engineering, v 8924, 2013, Fourth Asia Pacific Optical
Sensors Conference
Database: Compendex
361. An ultrathin terahertz lens with axial long focal depth based on metasurfaces
Jiang, Xiao-Yan (Department of Physics, Capital Normal University, Beijing Key Lab for THz
Spectroscopy and Imaging, Beijing 100048, China); Ye, Jia-Sheng; He, Jing-Wen; Wang, Xin-Ke; Hu,
Dan; Feng, Sheng-Fei; Kan, Qiang; Zhang, Yan Source: Optics Express, v 21, n 24, p 30030-30038,
December 2, 2013
Database: Compendex
362. 60 Gbit/s silicon modulators with enhanced electro-optical efficiency
Xiao, Xi (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, P. O. Box 912, Beijing 100083, China); Xu, Hao; Li, Xianyao; Li, Zhiyong; Chu,
Tao; Yu, Jinzhong; Yu, Yude Source: Optical Fiber Communication Conference, OFC 2013, p OW4J.3,
2013, Optical Fiber Communication Conference, OFC 2013
Database: Compendex
363. Ga-vacancy-induced room-temperature ferromagnetic and adjusted-band-gap behaviors in GaN
nanoparticles
Ren, Huihui (Key Laboratory of Solid-State Physics and Devices, Department of Physics, Xinjiang
University, Urumqi, Xinjiang, 830046, China); Jian, Jikang; Chen, Chu; Pan, Dong; Ablat, Abdulezi; Sun,
Yanfei; Li, Jin; Wu, Rong Source: Applied Physics A: Materials Science and Processing, p 1-7, 2013
Article in Press
Database: Compendex
364. 760-nm semiconductor passively mode-locked monolithic laser for picosecond pulse generation
Wang, H.L. (School of Engineering, Physics and Mathematics, University of Dundee, Dundee DD1 4HN,
United Kingdom); Kong, L.; Bajek, D.; Haggett, S.; Wang, X.L.; Cui, B.F.; Pan, J.Q.; Ding, Y.; Cataluna,
M.A. Source: CLEO: QELS_Fundamental Science, CLEO:QELS FS 2013, p JTh2A.20, 2013, CLEO:
QELS_Fundamental Science, CLEO:QELS FS 2013
Database: Compendex
365. A small box Fast Fourier Transformation method for fast Poisson solutions in large systems
Jiang, Xiang-Wei (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors,
Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Li, Shu-Shen; Wang, Lin-Wang
Source: Computer Physics Communications, v 184, n 12, p 2693-2702, December 2013
Database: Compendex
366. Impact of ammonia on the electrical properties of p-type Si nanowire arrays
Li, Chuanbo (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Zhang, Chunqian; Fobelets, Kristel; Zheng, Jun; Xue,
Chunlai; Zuo, Yuhua; Cheng, Buwen; Wang, Qiming Source: Journal of Applied Physics, v 114, n 17,
November 7, 2013
Database: Compendex
367. High-efficiency focusing grating coupler for large-scale silicon photonic integration
Yang, Biao (State Key Laboratory for Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Li, Zhi-Yong; Xiao, Xi; Yu, Jin-Zhong; Yu, Yu-De Source:
2013 International Conference on Optoelectronics and Microelectronics, ICOM 2013, p 160-162, 2013,
2013 International Conference on Optoelectronics and Microelectronics, ICOM 2013
Database: Compendex
368. Optical processing between two metallically hybrid microdisks
Che, Kai-Jun (School of Information Science and Engineering, Xiamen University, Xiamen, China); Lei,
Mei-Xin; Gu, Guo-Qiang; Cai, Zhi-Ping; Huang, Yong-Zhen Source: Applied Optics, v 52, n 34, p
8190-8194, December 1, 2013
Database: Compendex
369. Interface-induced topological insulator transition in GaAs/Ge/GaAs quantum wells
Zhang, Dong (SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing
100083, China); Lou, Wenkai; Miao, Maosheng; Zhang, Shou-Cheng; Chang, Kai Source: Physical
Review Letters, v 111, n 15, October 11, 2013
Database: Compendex
370. Triangular-range-intensity profile spatial-correlation method for 3D super-resolution range-gated
imaging
Xinwei, Wang (Optoelectronic System Laboratory, Institute of Semiconductors, CAS, Beijing 100083,
China); Youfu, Li; Yan, Zhou Source: Applied Optics, v 52, n 30, p 7399-7406, October 20, 2013
Database: Compendex
371. Passive Q-switching in a diode-side-pumped Nd:YAG laser at 1.319 μ m
Yan, Shilian (Chinese Academy of Sciences, Institute of Semiconductors, Laboratory of All-Solid-State
Light Sources, Beijing 100083, China); Zhang, Ling; Yu, Haijuan; Li, Menglong; Sun, Wei; Hou, Wei; Lin,
Xuechun; Wang, Yonggang; Wang, Yishan Source: Optical Engineering, v 52, n 10, 2013
Database: Compendex
372. A mode-locked external-cavity quantum-dot laser with a variable repetition rate
Wu, Jian (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Jin, Peng; Li, Xin-Kun; Wei, Heng; Wu, Yan-Hua; Wang,
Fei-Fei; Chen, Hong-Mei; Wu, Ju; Wang, Zhan-Guo Source: Chinese Physics B, v 22, n 10, October
2013
Database: Compendex
373. The fabrication of 10-channel DFB laser array by SAG technology
Zhang, Can (Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese
Academy of Sciences, PO Box 912, Beijing 100083, China); Liang, Song; Zhu, Hongliang; Han,
Liangshun; Lu, Dan; Ji, Chen; Zhao, Lingjuan; Wang, Wei Source: Optics Communications, v 311, p 6-10,
2013
Database: Compendex
374. Structural characterization and magnetic properties of perpendicularly magnetized MnAl films grown
by molecular-beam epitaxy
Nie, Shuai-Hua (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing 100083, China); Zhu, Li-Jun; Pan, Dong; Lu, Jun; Zhao, Jian-Hua
Source: Wuli Xuebao/Acta Physica Sinica, v 62, n 17, September 5, 2013 Language: Chinese
Database: Compendex
375. Small linewidth and short lifetime of emission from GaAs/AlAs core/shell quantum dots on the facet
of GaAs nanowire
Shang, Xiangjun (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors,
Chinese Academy of Sciences, PO Box 912, Beijing 100083, China); Yu, Ying; Zha, Guowei; Li, Mifeng;
Wang, Lijuan; Xu, Jianxing; Ni, Haiqiao; Niu, Zhichuan Source: Journal of Physics D: Applied Physics, v
46, n 40, October 9, 2013
Database: Compendex
376. Performance enhancement of thin-film amorphous silicon solar cells with low cost nanodent
plasmonic substrates
Huang, Hongtao (Wuhan National Laboratory for Optoelectronics, College of Optoelectronic Science and
Engineering, Huazhong University of Science and Technology, Wuhan 430074, China); Lu, Linfeng;
Wang, Jun; Yang, Jie; Leung, Siu-Fung; Wang, Yongqian; Chen, Di; Chen, Xiaoyuan; Shen, Guozhen; Li,
Dongdong; Fan, Zhiyong Source: Energy and Environmental Science, v 6, n 10, p 2965-2971, October
2013
Database: Compendex
377. Four-wavelength microdisk laser array laterally coupled with a bus waveguide
Zou, Ling-Xiu (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Lv, Xiao-Meng; Huang, Yong-Zhen; Long, Heng; Yao,
Qi-Feng; Xiao, Jin-Long; Du, Yun Source: Optics Letters, v 38, n 19, p 3807-3810, October 1, 2013
Database: Compendex
378. A wafer-level Sn-rich Au-Sn intermediate bonding technique with high strength
Fang, Zhiqiang (Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China);
Mao, Xu; Yang, Jinling; Yang, Fuhua Source: Journal of Micromechanics and Microengineering, v 23, n 9,
September 2013
Database: Compendex
379. High power 2-μm room-temperature continuous-wave operation of GaSb-based strained
quantum-well lasers
Yun, Xu (Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Yong-Bin,
Wang; Yu, Zhang; Guo-Feng, Song; Liang-Hui, Chen; Xu, Yun; Wang, Yong-Bin; Zhang, Yu; Song,
Guo-Feng; Chen, Liang-Hui Source: Chinese Physics B, v 22, n 9, September 2013
Database: Compendex
380. 3-D TCAD simulation of the pixel for TOF
Di, Shan (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing 100083, China); Cao, Zhongxiang; Zhou, Yangfan; Wu, Nanjian
Source: Proceedings of SPIE - The International Society for Optical Engineering, v 8908, 2013,
International Symposium on Photoelectronic Detection and Imaging 2013: Imaging Sensors and
Applications
Database: Compendex
381. Determination of the interface states in amorphous/crystalline silicon using surface photovoltage
spectroscopy
Li, Hao (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Zeng, Xiangbo; Yang, Ping; Zhang, Xiaodong; Xie,
Xiaobing; Li, Jingyan; Wang, Qiming Source: IEEE Electron Device Letters, v 34, n 9, p 1079-1081, 2013
Database: Compendex
382. A low power 2.4 GHz transceiver for ZigBee applications
Liu, Weiyang (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing 100083, China); Chen, Jingjing; Wang, Haiyong; Wu, Nanjian
Source: Journal of Semiconductors, v 34, n 8, August 2013
Database: Compendex
383. Shape designing for light extraction enhancement bulk-GaN light-emitting diodes
Sun, Bo (Semiconductor Lighting Technology Research and Development Center, Institute of
Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Zhao, Lixia; Wei, Tongbo; Yi,
Xiaoyan; Liu, Zhiqiang; Wang, Guohong; Li, Jinmin Source: Journal of Applied Physics, v 113, n 24, June
28, 2013
Database: Compendex
384. SnO2-microtube-assembled cloth for fully flexible self-powered photodetector nanosystems
Hou, Xiaojuan (Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic
Information, Huazhong University of Science and Technology, Wuhan 430074, China); Liu, Bin; Wang,
Xianfu; Wang, Zhuoran; Wang, Qiufan; Chen, Di; Shen, Guozhen Source: Nanoscale, v 5, n 17, p
7831-7837, September 7, 2013
Database: Compendex
385. Widely tunable dual-mode distributed feedback laser fabricated by selective area growth technology
integrated with Ti heaters
Zhang, Can (Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese
Academy of Sciences, P. O. Box 912, Beijing 100083, China); Liang, Song; Zhu, Hongliang; Wang, Wei
Source: Optics Letters, v 38, n 16, p 3050-3053, 2013
Database: Compendex
386. The generation of MHz isolated XUV attosecond pulses by plasmonic enhancement in a tailored
symmetric Ag cross nanoantenna with a few-cycle laser
Yang, Ying-Ying (Laboratory of Solid State Laser Sources, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing, 100083, China); Li, Qian-Guang; Yu, Hai-Juan; Lin, Xue-Chun Source:
Laser Physics, v 23, n 4, April 2013
Database: Compendex
387. Growth of hexagonal columnar nanograin structured SiC thin films on silicon substrates with
graphene-graphitic carbon nanoflakes templates from solid carbon sources
Liu, Xingfang (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Sun, Guosheng; Liu, Bin; Yan, Guoguo; Guan, Min;
Zhang, Yang; Zhang, Feng; Chen, Yu; Dong, Lin; Zheng, Liu; Liu, Shengbei; Tian, Lixin; Wang, Lei; Zhao,
Wanshun; Zeng, Yiping Source: Materials, v 6, n 4, p 1543-1553, 2013
Database: Compendex
388. Surface plasmon resonance sensor based on spectral interferometry: Numerical analysis
Zhang, Yunfang (Optoelectronic System Laboratory, Institute of Semiconductors, Chinese Academy of
Sciences, Beijing 100083, China); Li, Hui; Duan, Jingyuan; Shi, Ancun; Liu, Yuliang Source: Applied
Optics, v 52, n 14, p 3253-3259, May 10, 2013
Database: Compendex
389. Formation and characterization of multilayer GeSi nanowires on miscut Si (001) substrates
Gong, Hua (State Key Laboratory of Surface Physics, Department of Physics, Fudan University,
Shanghai 200433, China); Chen, Peixuan; Ma, Yingjie; Wang, Lijun; Rastelli, Armando; Schmidt, Oliver
G.; Zhong, Zhenyang Source: Journal of Nanoscience and Nanotechnology, v 13, n 2, p 834-838,
February 2013
Database: Compendex
390. Carrier-induced silicon bragg grating filters with a p-i-n Junction
Fang, Qing (Institute of Microelectronics, Agency for Science Technology and Research, 117685
Singapore, Singapore); Song, Jun Feng; Tu, Xiaoguang; Jia, Lianxi; Luo, Xianshu; Yu, Mingbin; Lo, Guo
Qiang Source: IEEE Photonics Technology Letters, v 25, n 9, p 810-812, 2013
Database: Compendex
391. Low-temperature quantum transport characteristics in single n-channel junctionless nanowire
transistors
Li, Xiaoming (Engineering Research Center for Semiconductor Integration Technology, Institute of
Semiconductors, Chinese Academic of Science, Beijing 100083, China); Han, Weihua; Ma, Liuhong;
Wang, Hao; Zhang, Yanbo; Yang, Fuhua Source: IEEE Electron Device Letters, v 34, n 5, p 581-583,
2013
Database: Compendex
392. Tunable surface electron spin splitting with electric double-layer transistors based on InN
Yin, Chunming (State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of
Physics, Peking University, Beijing, 100871, China); Yuan, Hongtao; Wang, Xinqiang; Liu, Shitao; Zhang,
Shan; Tang, Ning; Xu, Fujun; Chen, Zhuoyu; Shimotani, Hidekazu; Iwasa, Yoshihiro; Chen, Yonghai; Ge,
Weikun; Shen, Bo Source: Nano Letters, v 13, n 5, p 2024-2029, May 8, 2013
Database: Compendex
393. Thermoelectric devices based on one-dimensional nanostructures
Qi, Yangyang (Engineering Research Center for Semiconductor Integrated Technology, Institute of
Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Wang, Zhen; Zhang, Mingliang;
Yang, Fuhua; Wang, Xiaodong Source: Journal of Materials Chemistry A, v 1, n 20, p 6110-6124, May 28,
2013
Database: Compendex
394. X-ray probe of GaN thin films grown on InGaN compliant substrates
Xu, Xiaoqing (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Li, Yang; Liu, Jianming; Wei, Hongyuan; Liu, Xianglin;
Yang, Shaoyan; Wang, Zhanguo; Wang, Huanhua Source: Applied Physics Letters, v 102, n 13, April 1,
2013
Database: Compendex
395. Low-temperature performance of accumulation-mode p-channel wrap-gated FinFETs
Zhang, Yanbo (Engineering Research Center for Semiconductor Integration Technology, Institute of
Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Du, Yandong; Chen, Yankun; Li,
Xiaoming; Yang, Xiang; Han, Weihua; Yang, Fuhua Source: Journal of Nanoscience and Nanotechnology,
v 13, n 2, p 804-807, February 2013
Database: Compendex
396. Growth of 4H-SiC epilayers with low surface roughness and morphological defects density on
4off-axis substrates
Dong, Lin (Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Sun, Guosheng; Yu, Jun; Zheng, Liu; Liu, Xingfang;
Zhang, Feng; Yan, Guoguo; Li, Xiguang; Wang, Zhanguo Source: Applied Surface Science, v 270, p
301-306, April 1, 2013
Database: Compendex
397. Tripartite correlations in a Heisenberg XXZ spin ring in thermal equilibrium
Cai, Jiang-Tao (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors,
Chinese Academy of Sciences, P.O. Box 912, Beijing, 100083, China); Abliz, Ahmad Source: Physica A:
Statistical Mechanics and its Applications, v 392, n 10, p 2607-2614, May 15, 2013
Database: Compendex
398. Hybrid III-V/silicon single-mode laser with periodic microstructures
Zhang, Yejin (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Qu, Hongwei; Wang, Hailing; Zhang, Siriguleng; Ma,
Shaodong; Qi, Aiyi; Feng, Zhigang; Peng, Hongling; Zheng, Wanhua Source: Optics Letters, v 38, n 6, p
842-844, March 15, 2013
Database: Compendex
399. Electrical transport properties of boron-doped single-walled carbon nanotubes
Li, Y.F. (State Key Laboratory of Heavy Oil Processing, China University of Petroleum, Beijing Changping
102249, China); Wang, Y.; Chen, S.M.; Wang, H.F.; Kaneko, T.; Hatakeyama, R. Source: Journal of
Applied Physics, v 113, n 5, February 7, 2013
Database: Compendex
400. Synthesis of novel acceptor molecules of mono- and multiadduct fullerene derivatives for improving
photovoltaic performance
Liu, Chao (Beijing National Laboratory for Molecular Sciences (BNLMS), Institute of Chemistry, Chinese
Academy of Sciences, Beijing 100190, China); Xu, Liang; Chi, Dan; Li, Yongjun; Liu, Huibiao; Wang,
Jizheng Source: ACS Applied Materials and Interfaces, v 5, n 3, p 1061-1069, February 13, 2013
Database: Compendex
401. Defect revelation and evaluation of 4H silicon carbide by optimized molten KOH etching method
Dong, Lin (Material Science Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
100083, China); Zheng, Liu; Liu, Xingfang; Zhang, Feng; Yan, Guoguo; Li, Xiguang; Sun, Guosheng;
Wang, Zhanguo Source: Materials Science Forum, v 740-742, p 243-246, 2013, Silicon Carbide and
Related Materials 2012, ECSCRM 2012
Database: Compendex
402. The fabrication of large-area upgraded metallurgical grade multi-crystalline silicon solar cells in a
production line
Chen, Teng (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese
cademy of Sciences, Beijing, 100083, China); Zhao, Youwen; Dong, Zhiyuan; Wang, Jun; Liu, Tong; Xie,
Hui Source: Materials Science Forum, v 743-744, p 863-869, 2013, Energy and Environment Materials
Database: Compendex
403. High-speed, low-loss silicon Mach-Zehnder modulators with doping optimization
Xiao, Xi (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, P. O. Box 912, Beijing, 100083, China); Xu, Hao; Li, Xianyao; Li, Zhiyong; Chu,
Tao; Yu, Yude; Yu, Jinzhong Source: Optics Express, v 21, n 4, p 4116-4125, February 25, 2013
Database: Compendex
404. Improving the optical absorption of BiFeO3 for photovoltaic applications via uniaxial compression or
biaxial tension
Dong, Huafeng (Department of Physics, Tsinghua University, Beijing 100084, China); Wu, Zhigang;
Wang, Shanying; Duan, Wenhui; Li, Jingbo Source: Applied Physics Letters, v 102, n 7, February 18,
2013
Database: Compendex
405. First-principles study of atomic hydrogen adsorption and initial hydrogenation of Zr(0001) surface
Zhang, Peng (Department of Nuclear Science and Technology, Xi'An Jiaotong University, Xi'an 710049,
China); Wang, Shuangxi; Zhao, Jian; He, Chaohui; Zhao, Yaolin; Zhang, Ping Source: Journal of Applied
Physics, v 113, n 1, January 7, 2013
Database: Compendex
406. Anisotropic characteristics and morphological control of silicon nanowires fabricated by
metal-assisted chemical etching
Liu, Kong (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductor, Chinese
Academy of Sciences, Beijing 100083, China); Qu, Shengchun; Zhang, Xinhui; Wang, Zhanguo Source:
Journal of Materials Science, v 48, n 4, p 1755-1762, February 2013
Database: Compendex
407. Differences in etching characteristics of TMAH and KOH on preparing inverted pyramids for silicon
solar cells
Fan, Yujie (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, No. 35A Qinghua East Road, Haidian District, Beijing 100083, China); Han, Peide;
Liang, Peng; Xing, Yupeng; Ye, Zhou; Hu, Shaoxu Source: Applied Surface Science, v 264, p 761-766,
January 1, 2013
Database: Compendex
408. A 55 nm CMOS ΔΣ fractional-N frequency synthesizer for WLAN transceivers with low noise filters
Chen, Mingyi (Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Chu,
Xiaojie; Yu, Peng; Yan, Jun; Shi, Yin Source: Journal of Semiconductors, v 34, n 10, October 2013
Database: Compendex
409. Design of polarization-independent adiabatic splitters fabricated on silicon-on-insulator substrates
Xing, Jiejiang (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, P.O. Box 912, Beijing, 100083, China); Li, Zhiyong; Yu, Yude; Yu, Jinzhong
Source: Optics Express, v 21, n 22, p 26729-26734, November 4, 2013
Database: Compendex
410. 760-nm semiconductor passively mode-locked monolithic laser for picosecond pulse generation
Wang, H.L. (School of Engineering, Physics and Mathematics, University of Dundee, Dundee DD1 4HN,
United Kingdom); Kong, L.; Bajek, D.; Haggett, S.; Wang, X.L.; Cui, B.F.; Pan, J.Q.; Ding, Y.; Cataluna,
M.A. Source: CLEO: Science and Innovations, CLEO_SI 2013, p JTh2A.20, 2013, CLEO: Science and
Innovations, CLEO_SI 2013
Database: Compendex
411. Reduced defect density in microcrystalline silicon by hydrogen plasma treatment
Li, Jingyan (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Zeng, Xiangbo; Li, Hao; Xie, Xiaobing; Yang, Ping; Xiao,
Haibo; Zhang, Xiaodong; Wang, Qiming Source: Journal of Semiconductors, v 34, n 10, October 2013
Database: Compendex
412. Selective silencing of the electrical properties of metallic single-walled carbon nanotubes by
4-nitrobenzenediazonium tetrafluoroborate
Wang, Chao (Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nano-bionics,
Chinese Academy of Sciences, Suzhou, 215123, China); Xu, Wenya; Zhao, Jianwen; Lin, Jian; Chen,
Zheng; Cui, Zheng Source: Journal of Materials Science, p 1-9, 2013
Article in Press
Database: Compendex
413. Low cross-talk 2 × 2 silicon electro-optic switch matrix with a double-gate configuration
Xing, Jiejiang (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, P.O. Box 912, Beijing 100083, China); Li, Zhiyong; Yu, Yude; Yu, Jinzhong Source:
Optics Letters, v 38, n 22, p 4774-4776, November 15, 2013
Database: Compendex
414. A compact neural recording interface based on silicon microelectrode
Han, Jianqiang (State Key Laboratory on Integrated Optoelectronic, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Zhang, Xu; Pei, Weihua; Gui, Qiang; Liu, Ming; Chen,
Hongda Source: Science China Technological Sciences, v 56, n 11, p 2808-2813, November 2013,
Special Topic on Nano Energy and Piezotronics (2615-2657) Special Topic on Space Sciences
(2658-2689)
Database: Compendex
415. Synthesis, properties, and top-gated metal-oxide-semiconductor field-effect transistors of p-type
GaSb nanowires
Xu, H.Q. (State Key Lab for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871,
China); Xu, Guangwei; Huang, Shaoyun; Wang, Xiaoye; Yu, Bin; Zhang, Hui; Yang, Tao; Dai, Lun Source:
RSC Advances, v 3, n 43, p 19834-19839, November 21, 2013
Database: Compendex
416. Controllable synthesis of ZnO nanostructures on the Si substrate by a hydrothermal route
Dong, Jing-Jing (School of Science, China University of Geosciences, Beijing 100083, China); Zhen,
Chun-Yang; Hao, Hui-Ying; Xing, Jie; Zhang, Zi-Li; Zheng, Zhi-Yuan; Zhang, Xing-Wang Source:
Nanoscale Research Letters, v 8, n 1, p 1-7, 2013
Database: Compendex
417. Growth of Ge1-xSnx/Ge strained-layer superlattices on Si(1 0 0) by molecular beam epitaxy
Su, Shaojian (College of Information Science and Engineering, Huaqiao University, Xiamen 361021,
Fujian Province, China); Zhang, Dongliang; Zhang, Guangze; Xue, Chunlai; Cheng, Buwen Source:
Superlattices and Microstructures, v 64, p 543-551, 2013
Database: Compendex
418. Spin-based effects and transport properties of a spin-orbit-coupled hexagonal optical lattice
Zhu, G.-B. (Department of Physics, Capital Normal University, Beijing 100048, China); Sun, Q.; Zhang,
Y.-Y.; Chan, K.S.; Liu, W.-M.; Ji, A.-C. Source: Physical Review A - Atomic, Molecular, and Optical
Physics, v 88, n 2, August 13, 2013
Database: Compendex
419. Lattice dynamics in mono- and few-layer sheets of WS2 and WSe2
Zhao, Weijie (Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore
117542, Singapore); Ghorannevis, Zohreh; Amara, Kiran Kumar; Pang, Jing Ren; Toh, Minglin; Zhang,
Xin; Kloc, Christian; Tan, Ping Heng; Eda, Goki Source: Nanoscale, v 5, n 20, p 9677-9683, October 21,
2013
Database: Compendex
420. High-speed direct modulation unidirectional emission microring lasers
Lv, Xiao-Meng (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing 100083, China); Huang, Yong-Zhen; Zou, Ling-Xiu; Long, Heng;
Xiao, Jin-Long; Yang, Yue-De; Du, Yun Source: Electronics Letters, v 49, n 20, p 1290-1291, September
26, 2013
Database: Compendex
421. The progress of silicon-based grating couplers
Yang, Biao (National Key Laboratory for Optoelectronic Integration, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Li, Zhi-Yong; Xiao, Xi; Anastasia, Nemkova; Yu,
Jin-Zhong; Yu, Yu-De Source: Wuli Xuebao/Acta Physica Sinica, v 62, n 18, September 20, 2013
Language: Chinese
Database: Compendex
422. Design of a silicon Mach-Zehnder modulator with a U-type PN junction
Cao, Tongtong (State Key Laboratory on Optoelectronics, Institute of Semiconductors, Chinese Academy
of Sciences, Beijing 100083, China); Fei, Yonghao; Zhang, Libin; Cao, Yanmei; Chen, Shaowu Source:
Applied Optics, v 52, n 24, p 5941-5948, August 20, 2013
Database: Compendex
423. Chaos synchronization of two light-emitting diode systems with complex dynamics via adaptive
neural control
Han, Chun Xiao (Tianjin Key Laboratory of Information Sensing and Intelligent Control, Tianjin University
of Technology and Education, Tianjin, 300222, China); Li, Xiao Qin; Yang, Ting Ting; Li, Rui Xue Source:
Applied Mechanics and Materials, v 344, p 170-173, 2013, Advanced Research on Applied Mechanics,
Mechatronics and Intelligent System
Database: Compendex
424. Ge/Si quantum dots thin film solar cells
Liu, Zhi (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Zhou, Tianwei; Li, Leliang; Zuo, Yuhua; He, Chao; Li,
Chuanbo; Xue, Chunlai; Cheng, Buwen; Wang, Qiming Source: Applied Physics Letters, v 103, n 8,
August 19, 2013
Database: Compendex
425. Tunable liquid crystal Fabry-Perot hyperspectral imaging detectors in mid-infrared
Fu, Anbang (National Key Laboratory of Science and Technology on Multispectral Information
Processing, Wuhan 430074, China); Zhang, Huaidong; Zhang, Xinyu; Sang, Hongshi; Ji, An; Xie,
Changsheng Source: Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering, v 42, n 7, p
1853-1857, July 2013
Database: Compendex
426. High power laser diode with non-absorbing windows fabricated by quantum well intermixing
Lin, T. (School of Automation and Information Engineering, Xi'an University of Technology, P.O. Box
710048, Xi'an, China); Zhang, H.Q.; Li, C.; Ma, X.J.; Lin, N.; Zheng, K.; Ma, X.Y. Source: International
Journal of Nanomanufacturing, v 9, n 3-4, p 368-374, 2013, Special Issue on New Energy Materials and
Nanotechnology - Part I
Database: Compendex
427. Synthesis of WO3 nanostructures and their ultraviolet photoresponse properties
Huo, Nengjie (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors,
Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Yang, Shengxue; Wei, Zhongming;
Li, Jingbo Source: Journal of Materials Chemistry C, v 1, n 25, p 3999-4007, July 7, 2013
Database: Compendex
428. Enhanced optical property of ingan light-emitting diodes with SiO 2 nano-bowl photonic crystal by
nanosphere lithography
Zheng, Haiyang (Semiconductor Lighting Technology Research and Development Center, Institute of
Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Wu, Kui Source: ECS Solid
State Letters, v 2, n 7, p Q51-Q53, 2013
Database: Compendex
429. Electron mobility in the linear region of an AlGaN/AlN/GaN heterostructure field-effect transistor
Yu, Ying-Xia (School of Physics, Shandong University, Jinan 250100, China); Lin, Zhao-Jun; Luan,
Chong-Biao; Wang, Yu-Tang; Chen, Hong; Wang, Zhan-Guo Source: Chinese Physics B, v 22, n 6, June
2013
Database: Compendex
430. The research of the perpendicular magnetic anisotropy in CoFeB/AlOx/Ta and AlOx/CoFeB/Ta
structures
Chen, Xi (The State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing 100083, China); Liu, Hou-Fang; Han, Xiu-Feng; Ji, Yang Source:
Wuli Xuebao/Acta Physica Sinica, v 62, n 13, July 5, 2013 Language: Chinese
Database: Compendex
431. Product level accelerated lifetime test for indoor LED luminaires
Koh, Sau (Delft Institute of Microsystems and Nanoelectronics (Dimes), Delft University of Technology,
Netherlands); Yuan, Cadmus; Sun, Bo; Li, Bob; Fan, Xuejun; Zhang, G.Q. Source: 2013 14th
International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in
Microelectronics and Microsystems, EuroSimE 2013, 2013, 2013 14th International Conference on
Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and
Microsystems, EuroSimE 2013
Database: Compendex
432. The fabrication of GaN-based nanorod light-emitting diodes with multilayer graphene transparent
electrodes
Li, Zhi (Semiconductor Lighting Technology Research and Development Center, Institute of
Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Kang, Junjie; Zhang, Yiyun; Liu,
Zhiqiang; Wang, Liancheng; Lee, Xiao; Li, Xiao; Yi, Xiaoyan; Zhu, Hongwei; Wang, Guohong Source:
Journal of Applied Physics, v 113, n 23, June 21, 2013
Database: Compendex
433. Comparisons of typical nonlinear states in single- and dual-beam optically injected semiconductor
lasers
Qi, Xiaoqiong (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Xie, Liang; Liu, Yuping Source: Optics Communications, v
309, p 163-169, 2013
Database: Compendex
434. High-brightness diode laser arrays integrated with a phase shifter designed for single-lobe far-field
pattern
Liu, Lei (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, CAS, Beijing
100083, China); Zhang, Jianxin; Ma, Shaodong; Qi, Aiyi; Qu, Hongwei; Zhang, Yejin; Zheng, Wanhua
Source: Optics Letters, v 38, n 15, p 2770-2772, August 1, 2013
Database: Compendex
435. Enhanced photoluminescence from porous silicon nanowire arrays
Zhang, Chunqian (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing 100083, China); Li, Chuanbo; Liu, Zhi; Zheng, Jun; Xue, Chunlai;
Zuo, Yuhua; Cheng, Buwen; Wang, Qiming Source: Nanoscale Research Letters, v 8, n 1, p 1-4, 2013
Database: Compendex
436. Interface and transport properties of metallization contacts to flat and wet-etching roughed N-polar
n-type GaN
Wang, Liancheng (Semiconductor Lighting Technology Research and Development Center, Institute of
Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Liu, Zhiqiang; Guo, Enqing;
Yang, Hua; Yi, Xiaoyan; Wang, Guohong Source: ACS Applied Materials and Interfaces, v 5, n 12, p
5797-5803, June 26, 2013
Database: Compendex
437. Bidirectional grating coupler based optical modulator for low-loss Integration and low-cost fiber
packaging
Zhang, Zanyun (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing 100083, China); Huang, Beiju; Zheng, Zan; Cheng, Chuantong;
Chen, Hongda Source: Optics Express, v 21, n 12, p 14202-14214, June 2013
Database: Compendex
438. 282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on
nano-patterned sapphire substrates
Dong, Peng (Semiconductor Lighting Technology Research and Development Center, Institute of
Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Yan, Jianchang; Wang, Junxi;
Zhang, Yun; Geng, Chong; Wei, Tongbo; Cong, Peipei; Zhang, Yiyun; Zeng, Jianping; Tian, Yingdong;
Sun, Lili; Yan, Qingfeng; Li, Jinmin; Fan, Shunfei; Qin, Zhixin Source: Applied Physics Letters, v 102, n
24, June 17, 2013
Database: Compendex
439. Fabrication of strongly adherent platinum black coatings on microelectrodes array
Tang, RongYu (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing, 100083, China); Pei, WeiHua; Chen, SanYuan; Zhao, Hui; Chen,
YuanFang; Han, Yao; Wang, ChunLan; Chen, HongDa Source: Science China Information Sciences, p
1-11, 2013
Article in Press
Database: Compendex
440. Design of an evanescent-coupled GeSi electro-absorption modulator based on Franz-Keldysh effect
Li, Ya-Ming (Institute State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor,
Chinese Academy of Sciences, Beijing 100083, China); Liu, Zhi; Xue, Chun-Lai; Li, Chuan-Bo; Cheng,
Bu-Wen; Wang, Qi-Ming Source: Wuli Xuebao/Acta Physica Sinica, v 62, n 11, June 5, 2013 Language:
Chinese
Database: Compendex
441. Fabrication and characterization of an SOI MEMS gyroscope
Zhong, Weiwei (Research Center of Engineering for Semiconductor Integrated Technology, Institute of
Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Han, Guowei; Si, Chaowei;
Ning, Jin; Yang, Fuhua Source: Journal of Semiconductors, v 34, n 6, June 2013
Database: Compendex
442. Electro-optic directed XNOR logic gate based on U-shaped waveguides and microring resonators
Zhu, Weiwei (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Tian, Yonghui; Zhang, Lei; Yang, Lin Source: IEEE
Photonics Technology Letters, v 25, n 14, p 1305-1308, 2013
Database: Compendex
443. Magnetic silicon nanotube: Role of encapsulated europium atoms
Li, Jing (Department of Physics, Hebei Advanced Thin Film Laboratory, Hebei Normal University,
Shijiazhuang 050024, Hebei, China); Wang, Jing; Zhao, Hui-Yan; Liu, Ying Source: Journal of Physical
Chemistry C, v 117, n 20, p 10764-10769, May 23, 2013
Database: Compendex
444. The effect of δ-doping and modulation-doping on Si-doped high Al content n-AlxGa1-xN grown by
MOCVD
Zhu, Shaoxin (Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Yan,
Jianchang; Zeng, Jianping; Zhang, Ning; Si, Zhao; Dong, Peng; Li, Jinmin; Wang, Junxi Source: Journal
of Semiconductors, v 34, n 5, May 2013
Database: Compendex
445. 19 μm quantum cascade infrared photodetectors
Zhai, Shen-Qiang (Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese
Academy of Sciences, P.O. Box 912, Beijing 100083, China); Liu, Jun-Qi; Wang, Xue-Jiao; Zhuo, Ning;
Liu, Feng-Qi; Wang, Zhan-Guo; Liu, Xi-Hui; Li, Ning; Lu, Wei Source: Applied Physics Letters, v 102, n 19,
May 13, 2013
Database: Compendex
446. Synthesis of chalcopyrite CuIn1-xGaxSe2 alloys for photovoltaic application by a novel melting
method
Chen, Teng (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Zhao, Youwen; Dong, Zhiyuan; Yang, Jun; Liu, Tong
Source: Materials Letters, v 106, p 52-55, 2013
Database: Compendex
447. A 1.55-μm laser array monolithically integrated with an MMI combiner
Ma, Li (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Zhu, Hongliang; Liang, Song; Wang, Baojun; Zhang, Can;
Zhao, Lingjuan; Bian, Jing; Chen, Minghua Source: Journal of Semiconductors, v 34, n 4, April 2013
Database: Compendex
448. Influence of growth conditions on the lateral grain size of AlN film grown by metal-organic chemical
vapor deposition
Wu, Liang-Liang (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing 100083, China); Zhao, De-Gang; Li, Liang; Le, Ling-Cong; Chen,
Ping; Liu, Zong-Shun; Jiang, De-Sheng Source: Wuli Xuebao/Acta Physica Sinica, v 62, n 8, April 20,
2013 Language: Chinese
Database: Compendex
449. Wavelength evolution of long-period fiber gratings in a water environment
Zhao, Qiang (National Key Laboratory on High Power Semiconductor Lasers, Changchun University of
Science and Technology, Changchun, Jilin 130022, China); Qu, Yi; Wang, Yong-Jie; Li, Fang Source:
Applied Optics, v 52, n 11, p 2478-2483, April 10, 2013
Database: Compendex
450. Statistical properties of Rayleigh backscattered light in single-mode fibers caused by a highly
coherent laser
Ren, Meizhen (Optoelectronic System Laboratory, Institute of Semiconductors, Chinese Academy of
Sciences, Beijing 100083, China); Xu, Tuanwei; Zhang, Faxiang; Li, Fang; Liu, Yuliang Source:
Zhongguo Jiguang/Chinese Journal of Lasers, v 40, n 1, January 2013 Language: Chinese
Database: Compendex
451. Spin-polarized injection into a p-type GaAs layer from a Co2MnAl injector
Yuan, Si-Peng (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing 100083, China); Shen, Chao; Zheng, Hou-Zhi; Liu, Qi; Wang,
Li-Guo; Meng, Kang-Kang; Zhao, Jian-Hua Source: Chinese Physics B, v 22, n 4, April 2013
Database: Compendex
452. Modulation of thermal conductivity in kinked silicon nanowires: Phonon interchanging and pinching
effects
Jiang, Jin-Wu (Institute of Structural Mechanics, Bauhaus-University Weimar, Marienstr. 15, D-99423
Weimar, Germany); Yang, Nuo; Wang, Bing-Shen; Rabczuk, Timon Source: Nano Letters, v 13, n 4, p
1670-1674, April 10, 2013
Database: Compendex
453. All zinc-blende GaAs/(Ga,Mn)As core-shell nanowires with ferromagnetic ordering
Yu, Xuezhe (State Key Laboratory of Superlattices and Microstructrues, Institute of Semiconductors,
Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Wang, Hailong; Pan, Dong; Zhao,
Jianhua; Misuraca, Jennifer; Von Molnár, Stephan; Xiong, Peng Source: Nano Letters, v 13, n 4, p
1572-1577, April 10, 2013
Database: Compendex
454. Temperature dependence of anisotropic mode splitting induced by birefringence in an
InGaAs/GaAs/AlGaAs vertical-cavity surface-emitting laser studied by reflectance difference
spectroscopy
Yu, Jinling (College of Physics and Information Engineering, Institute of Micro/Nano Devices and Solar
Cells, Fuzhou University, Fuzhou, Fujian Province 350108, China); Chen, Yonghai; Cheng, Shuying; Lai,
Yunfeng Source: Applied Optics, v 52, n 5, p 1035-1040, February 10, 2013
Database: Compendex
455. High-bandwidth and high-responsivity top-illuminated germanium photodiodes for optical
interconnection
Li, Chong (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Xue, Chunlai; Liu, Zhi; Cheng, Buwen; Li, Chuanbo;
Wang, Qiming Source: IEEE Transactions on Electron Devices, v 60, n 3, p 1183-1187, 2013
Database: Compendex
456. Surface plasmon resonance enhanced ellipsometric analysis for monitoring of cobalt
electrochemical reaction in solution
Wang, Zhenzhen (State Key Laboratory Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Liu, Wei; Wang, Chunxia; Kan, Qiang; Chen, She; Chen,
Hongda Source: Sensors and Actuators, B: Chemical, v 181, p 221-226, 2013
Database: Compendex
457. In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs
self-assembled quantum dots
Li, Mi-Feng (State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors,
Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China); Yu, Ying; He, Ji-Fang; Wang,
Li-Juan; Zhu, Yan; Shang, Xiang-Jun; Ni, Hai-Qiao; Niu, Zhi-Chuan Source: Nanoscale Research Letters,
v 8, n 1, p 1-6, 2013
Database: Compendex
458. High response solar-blind ultraviolet photodetector based on Zr 0.5Ti0.5O2 film
Zhang, Min (State Key Laboratory on Integrated Optoelectronics, Jilin University, 2699 Qianjin Street,
Changchun 130012, China); Gu, Xuehui; Lv, Kaibo; Dong, Wei; Ruan, Shengping; Chen, Yu; Zhang,
Haifeng Source: Applied Surface Science, v 268, p 312-316, 2013
Database: Compendex
459. Electrical properties of the absorber layer for mid, long and very long wavelength detection using
type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy
Guo, Xiaolu (Institute of Semiconductors, Chinese Academy of Sciences, Qinghua East Road A 35,
Beijing 100083, China); Ma, Wenquan; Huang, Jianliang; Zhang, Yanhua; Wei, Yang; Cui, Kai; Cao,
Yulian; Li, Qiong Source: Semiconductor Science and Technology, v 28, n 4, April 2013
Database: Compendex
460. PEDOT/MWCNT composite film coated microelectrode arrays for neural interface improvement
Chen, Sanyuan (State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing 100083, China); Pei, Weihua; Gui, Qiang; Tang, Rongyu; Chen,
Yuanfang; Zhao, Shanshan; Wang, Huan; Chen, Hongda Source: Sensors and Actuators, A: Physical, v
193, p 141-148, 2013
Database: Compendex
461. Improved performance of dye-sensitized solar cells with TiO2 nanocrystal/nanowires double-layered
films as photoelectrode
Meng, Xiuqing (Research Center for Light Emitting Diodes (LED), Zhejiang Normal University, Jinhua,
321004, China); Wang, Yan; Wang, Meili; Tu, Jielei; Wu, Fengmin Source: RSC Advances, v 3, n 10, p
3304-3308, March 14, 2013
Database: Compendex
462. Improved transport properties of graphene/GaN junctions in GaN-based vertical light emitting
diodes by acid doping
Wang, Liancheng (Semiconductor Lighting Technology Research and Development Center, Institute of
Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China); Zhang, Yiyun; Li, Xiao; Guo,
Enqing; Liu, Zhiqiang; Yi, Xiaoyan; Zhu, Hongwei; Wang, Guohong Source: RSC Advances, v 3, n 10, p
3359-3364, March 14, 2013
Database: Compendex
463. Extraction of terahertz emission from a grating-coupled high-electron-mobility transistor
Zhou, Yu (Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and
Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China); Li, Xinxing; Tan, Renbing; Xue,
Wei; Huang, Yongdan; Lou, Shitao; Zhang, Baoshun; Qin, Hua Source: Journal of Semiconductors, v 34,
n 2, February 2013
Database: Compendex
464. Nucleation and growth surface conductivity of H-terminated diamond films prepared by DC arc jet
CVD
Liu, J.L. (School of Materials Science and Engineering, University of Science and Technology Beijing,
Beijing 100083, China); Li, C.M.; Chen, L.X.; Wei, J.J.; Hei, L.F.; Wang, J.J.; Feng, Z.H.; Guo, H.; Lv, F.X.
Source: Diamond and Related Materials, v 32, p 48-53, 2013
Database: Compendex
465. Theoretical calculation of the interfacial charge-modulated two-dimensional electron gas mobility in
Al2O3/AlGaN/GaN double heterojunction high-electron mobility transistors
Ji, Dong (Department of Physics, Beijing Jiaotong University, Beijing 100044, China); Lu, Yanwu; Liu,
Bing; Liu, Guipeng; Zhu, Qinsheng; Wang, Zhanguo Source: Solid State Communications, v 153, n 1, p
53-57, January 2013
Database: Compendex
466. Diaphragm-based fiber optic fabry-perot hydrophone with hydrostatic pressure compensation
Wang, Zhaogang (Optoelectronics System Laboratory, Institute of Semiconductors, Chinese Academy of
Sciences, P.O.Box 912, Beijing, 100083, China); Zhang, Wentao; Li, Fang Source: Proceedings of SPIE The International Society for Optical Engineering, v 8924, 2013, Fourth Asia Pacific Optical Sensors
Conference
Database: Compendex
467. Investigation of the current collapse induced in InGaN back barrier AlGaN/GaN high electron
mobility transistors
Wan, Xiaojia (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Wang, Xiaoliang; Xiao, Hongling; Feng, Chun; Jiang,
Lijuan; Qu, Shenqi; Wang, Zhanguo; Hou, Xun Source: Journal of Semiconductors, v 34, n 10, October
2013
Database: Compendex
468. Electric field driven plasmon dispersion in AlGaN/GaN high electron mobility transistors
Tan, Ren-Bing (Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and
Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China); Qin, Hua; Zhang, Xiao-Yu; Xu,
Wen Source: Chinese Physics B, v 22, n 11, November 2013
Database: Compendex
469. High efficiency beam combination of 4.6-μm quantum cascade lasers
Wu, Hao (Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences,
Changchun 130033, China); Wang, Lijun; Liu, Fengqi; Peng, Hangyu; Zhang, Jun; Tong, Cunzhu; Ning,
Yongqiang; Wang, Lijun Source: Chinese Optics Letters, v 11, n 9, September 2013
Database: Compendex
470. A processing window for fabricating heavily doped silicon nanowires by metal-assisted chemical
etching
Qi, Yangyang (Engineering Research Center for Semiconductor Integrated Technology, Institute of
Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Wang, Zhen; Zhang, Mingliang;
Yang, Fuhua; Wang, Xiaodong Source: Journal of Physical Chemistry C, v 117, n 47, p 25090-25096,
November 27, 2013
Database: Compendex
471. Properties of δ doped GaAs/AlxGa1-xAs 2DEG with embedded InAs quantum dots
Wang, Hong-Pei (Laboratory of Nanotechnology and Microsystems, Ordnance Engineering College,
Shijiazhuang 050003, China); Wang, Guang-Long; Yu, Ying; Xu, Ying-Qiang; Ni, Hai-Qiao; Niu,
Zhi-Chuan; Gao, Feng-Qi Source: Wuli Xuebao/Acta Physica Sinica, v 62, n 20, 2013 Language:
Chinese
Database: Compendex
472. Efficiency enhancement of polymer solar cells by localized surface plasmon of Au nanoparticles
Gao, H.L. (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Zhang, X.W.; Yin, Z.G.; Zhang, S.G.; Meng, J.H.; Liu, X.
Source: Journal of Applied Physics, v 114, n 16, October 28, 2013
Database: Compendex
473. Monolithic integrated silicon photonic interconnect with perfectly vertical coupling optical interface
Zhang, Zanyun (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing 100083, China); Huang, Beiju; Zheng, Zan; Cheng, Chuantong;
Chen, Hongda Source: IEEE Photonics Journal, v 5, n 5, 2013
Database: Compendex
474. Optimum design of cam curve of zoom system based on Zemax
Gao, Yuhan (Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China); Yang,
Zhiqing; Zhao, Weixing; Jiang, Bo; Li, Dongmei; Li, Mingshan Source: Optik, v 124, n 23, p 6359-6362,
December 2013
Database: Compendex
475. Surface emitting quantum cascade lasers operating in continuous-wave mode above 70 °c at λ ～
4.6 μm
Yao, Dan-Yang (Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese
Academy of Sciences, P.O. Box 912, Beijing 100083, China); Zhang, Jin-Chuan; Liu, Feng-Qi; Zhuo,
Ning; Yan, Fang-Liang; Wang, Li-Jun; Liu, Jun-Qi; Wang, Zhan-Guo Source: Applied Physics Letters, v
103, n 4, July 22, 2013
Database: Compendex
476. Structural and optical properties of (Sr,Ba)2SiO4:Eu2+ thin films grown by magnetron sputtering
Li, Leliang (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, Peoples Republic of China); Zheng, Jun; Zuo, Yuhua; Cheng,
Buwen; Wang, Qiming Source: Journal of Luminescence, 2013
Article in Press
Database: Compendex
477. Compact and power-efficient silicon modulators beyond 60 Gbit/s
Xiao, Xi (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, P. O. Box 912, Beijing, 100083, China); Xu, Hao; Li, Xianyao; Chu, Tao; Yu,
Jinzhong; Yu, Yude Source: Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical
Digest, 2013, 2013 Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2013
Database: Compendex
478. Hydrogen storage by metalized silicene and silicane
Wang, Jing (Department of Physics, Hebei Advanced Thin Film Laboratory, Hebei Normal University,
Shijiazhuang 050024, China); Li, Jingbo; Li, Shu-Shen; Liu, Ying Source: Journal of Applied Physics, v
114, n 12, 2013
Database: Compendex
479. Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors
(p-MOSFETs) with ammonium sulfide passivation
Wang, Lanxiang (Department of Electrical and Computer Engineering, NUS Graduate School of
Integrative Sciences and Engineering (NGS), National University of Singapore, Singapore 117576,
Singapore); Su, Shaojian; Wang, Wei; Gong, Xiao; Yang, Yue; Guo, Pengfei; Zhang, Guangze; Xue,
Chunlai; Cheng, Buwen; Han, Genquan; Yeo, Yee-Chia Source: Solid-State Electronics, v 83, p 66-70,
2013
Database: Compendex
480. Photonic generation of widely tunable and background-free binary phase-coded radio-frequency
pulses
Li, Wei (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Wang, Li Xian; Li, Ming; Zhu, Ning Hua Source: Optics
Letters, v 38, n 17, p 3441-3444, September 1, 2013
Database: Compendex
481. The output power and beam divergence behaviors of tapered terahertz quantum cascade lasers
Li, Yanfang (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese
Academy of Sciences, 100083, Beijing, China); Wang, Jian; Yang, Ning; Liu, Junqi; Wang, Tao; Liu,
Fengqi; Wang, Zhanguo; Chu, Weidong; Duan, Suqing Source: Optics Express, v 21, n 13, p
15998-16006, July 1, 2013
Database: Compendex
482. Design and experimental verification for optical module of optical vector-matrix multiplier
Zhu, Weiwei (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, P.O. Box 912, Beijing 100083, China); Zhang, Lei; Lu, Yangyang; Zhou, Ping;
Yang, Lin Source: Applied Optics, v 52, n 18, p 4412-4418, June 20, 2013
Database: Compendex
483. Dual-beam optically injected semiconductor laser for radio-over-fiber downlink transmission with
tunable microwave subcarrier frequency
Liu, Yuping (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Qi, Xiaoqiong; Xie, Liang Source: Optics Communications,
v 292, p 117-122, 2013
Database: Compendex
484. Terahertz light deflection in doped semiconductor slit arrays
Xu, Binzong (Institute of Semiconductors, Chinese Academy of Sciences, No. A35, QingHua East Road,
Haidian District, Beijing 100083, China); Hu, Haifeng; Liu, Jietao; Wei, Xin; Wang, Qing; Song, Guofeng;
Xu, Yun Source: Optics Communications, v 308, p 74-77, 2013
Database: Compendex
485. Conjugated molecule doped polyaniline films as buffer layers in organic solar cells
Tan, Furui (Key Laboratory of Photovoltaic Materials, Department of Physics and Electronics, Henan
University, Henan 475004, China); Qu, Shengchun; Zhang, Weifeng; Zhang, Xingwang; Wang, Zhanguo
Source: Synthetic Metals, v 178, p 18-21, 2013
Database: Compendex
486. Growth temperature dependent structural and magnetic properties of epitaxial Co2FeAl Heusler
alloy films
Qiao, Shuang (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors,
Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Nie, Shuaihua; Zhao, Jianhua;
Zhang, Xinhui Source: Journal of Applied Physics, v 113, n 23, June 21, 2013
Database: Compendex
487. Investigation anisotropic mode splitting induced by electro-optic birefringence in an
InGaAs/GaAs/AlGaAs vertical-cavity surface-emitting laser
Yu, J.L. (College of Physics and Information Engineering, Institute of Micro/Nano Devices and Solar Cells,
Fuzhou University, Fuzhou 350108, Fujian Province, China); Cheng, S.Y.; Lai, Y.F.; Chen, Y.H. Source:
Journal of Applied Physics, v 114, n 3, July 21, 2013
Database: Compendex
488. Multi-component continuous separation chip composed of micropillar arrays in a split-level spiral
channel
Geng, Zhaoxin (School of Information Engineering, Minzu University of China, Beijing 100081, China); Ju,
Yanrui; Wang, Qifeng; Wang, Wei; Li, Zhihong Source: RSC Advances, v 3, n 34, p 14798-14806, August
5, 2013
Database: Compendex
489. Molecular beam epitaxial growth of Bi2Te3 and Sb 2Te3 topological insulators on GaAs (111)
substrates: A potential route to fabricate topological insulator p-n junction
Zeng, Zhaoquan (Arkansas Institute for Nanoscale Material Sciences and Engineering, University of
Arkansas, Fayetteville, AR 72701, United States); Morgan, Timothy A.; Fan, Dongsheng; Li, Chen;
Hirono, Yusuke; Hu, Xian; Zhao, Yanfei; Lee, Joon Sue; Wang, Jian; Wang, Zhiming M.; Yu, Shuiqing;
Hawkridge, Michael E.; Benamara, Mourad; Salamo, Gregory J. Source: AIP Advances, v 3, n 7, 2013
Database: Compendex
490. A hybrid silicon single-mode laser with a racetrack ring and periodic slots
Zhang, Yejin (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Wang, Hailing; Qu, Hongwei; Zhang, Siriguleng; Zheng,
Wanhua Source: Microwave and Optical Technology Letters, v 55, n 9, p 2141-2143, September 2013
Database: Compendex
491. Dispersion relation of bloch modes in corrugated metallic thin film with square-lattice nanowell array
Wang, Zhenzhen (Key Laboratory Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Wang, Chunxia; Kan, Qiang; Chen, Hongda Source:
Journal of Lightwave Technology, v 31, n 14, p 2314-2320, 2013
Database: Compendex
492. Structural and magnetic properties of Yb-implanted GaN
Yin, Chunhai (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Liu, Chao; Tao, Dongyan; Zeng, Yiping Source: Journal of
Semiconductors, v 34, n 5, May 2013
Database: Compendex
493. High sensitivity Hall devices with AlSb/InAs quantum well structures
Zhang, Yang (Key Laboratory of Semiconductor Materials Science, Chinese Academy of Sciences,
Beijing 100083, China); Zhang, Yu-Wei; Wang, Cheng-Yan; Guan, Min; Cui, Li-Jie; Li, Yi-Yang; Wang,
Bao-Qiang; Zhu, Zhan-Ping; Zeng, Yi-Ping Source: Chinese Physics B, v 22, n 5, May 2013
Database: Compendex
494. Mode analysis for unidirectional emission AlGaInAs/InP octagonal resonator microlasers
Zou, Ling-Xiu (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Lv, Xiao-Meng; Huang, Yong-Zhen; Long, Heng; Xiao,
Jin-Long; Yao, Qi-Feng; Lin, Jian-Dong; Du, Yun Source: IEEE Journal on Selected Topics in Quantum
Electronics, v 19, n 4, 2013
Database: Compendex
495. InP based DFB laser array integrated with MMI coupler
Zhu, Hongliang (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing 100083, China); Ma, Li; Liang, Song; Zhang, Can; Wang, Baojun;
Zhao, Lingjuan; Wang, Wei Source: Science China Technological Sciences, v 56, n 3, p 573-578, March
2013
Database: Compendex
496. The effect of magnetic ordering on light emitting intensity of Eu-doped GaN
Li, Yanchen (Key Laboratory of Artificial Micro-and Nano-structures, Ministry of Education, Wuhan
University, Wuhan 430072, Hubei, China); Yu, Sheng; Meng, Xianquan; Liu, Yihe; Zhao, Yonghe; Liu,
Feng Qi; Wang, Zhanguo Source: Journal of Physics D: Applied Physics, v 46, n 21, May 29, 2013
Database: Compendex
497. Mode analysis for metal-coated nanocavity by three-dimensional S-matrix method
Yao, Qi-Feng (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, P.O. Box 912, Beijing 100083, China); Huang, Yong-Zhen; Yang, Yue-De; Zou,
Ling-Xiu; Lv, Xiao-Meng; Long, Heng; Xiao, Jin-Long; Guo, Chu-Cai Source: Journal of the Optical
Society of America B: Optical Physics, v 30, n 5, p 1335-1341, May 2013
Database: Compendex
498. High-performance energy-storage devices based on WO3 nanowire arrays/carbon cloth integrated
electrodes
Gao, Lina (Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information,
Huazhong University of Science and Technology, Wuhan 430074, China); Wang, Xianfu; Xie, Zhong;
Song, Weifeng; Wang, Lijing; Wu, Xiang; Qu, Fengyu; Chen, Di; Shen, Guozhen Source: Journal of
Materials Chemistry A, v 1, n 24, p 7167-7173, June 28, 2013
Database: Compendex
499. Mach-Zehnder-based five-port silicon router for optical interconnects
Li, Xianyao (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, P.O. Box 912, Beijing 100083, China); Xiao, Xi; Xu, Hao; Li, Zhiyong; Chu, Tao; Yu,
Jinzhong; Yu, Yude Source: Optics Letters, v 38, n 10, p 1703-1705, May 15, 2013
Database: Compendex
500. Selective synthesis of Sb2S3 nanoneedles and nanoflowers for high performance rigid and flexible
photodetectors
Chao, Junfeng (Wuhan National Laboratory for Optoelectronics (WNLO), School of Optical and
Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan, 430074, China);
Liang, Bo; Hou, Xiaojuan; Liu, Zhe; Xie, Zhong; Liu, Bin; Song, Weifeng; Chen, Gui; Chen, Di; Shen,
Guozhen Source: Optics Express, v 21, n 11, p 13639-13647, June 3, 2013
Database: Compendex
501. Multibistability and self-pulsation in nonlinear high-Q silicon microring resonators considering
thermo-optical effect
Zhang, Libin (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Fei, Yonghao; Cao, Tongtong; Cao, Yanmei; Xu,
Qingyang; Chen, Shaowu Source: Physical Review A - Atomic, Molecular, and Optical Physics, v 87, n 5,
May 6, 2013
Database: Compendex
502. Observation of photo darkening in self assembled InGaAs/GaAs quantum dots
Zhang, Hongyi (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors,
Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China); Chen, Yonghai; Zhou, Xiaolong;
Jia, Yanan; Ye, Xiaoling; Xu, Bo; Wang, Zhanguo Source: Journal of Applied Physics, v 113, n 17, May 7,
2013
Database: Compendex
503. High performance thin film transistors based on regioregular poly(3-dodecylthiophene)-sorted large
diameter semiconducting single-walled carbon nanotubes
Wang, Chao (Printable Electronics Research Centre, Suzhou Institute of Nanotech and Nano-bionics,
Chinese Academy of Sciences, No. 398 Ruoshui Road, SEID, Suzhou Industrial Park, Suzhou, Jiangsu
Province 215123, China); Qian, Long; Xu, Wenya; Nie, Shuhong; Gu, Weibing; Zhang, Jianhui; Zhao,
Jianwen; Lin, Jian; Chen, Zheng; Cui, Zheng Source: Nanoscale, v 5, n 10, p 4156-4161, May 21, 2013
Database: Compendex
504. Error analysis of InP arrayed waveguide grating
Pan, Pan (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); An, Jun-Ming; Wang, Liang-Liang; Zhang, Li-Yao; Wang,
Yue; Hu, Xiong-Wei Source: Guangzi Xuebao/Acta Photonica Sinica, v 42, n 3, p 293-297, March 2013
Language: Chinese
Database: Compendex
505. Fiber optic accelerometer based on clamped beam
Zhang, Wentao (Optoelectronics System Laboratory, Institute of Semiconductors, Chinese Academy of
Sciences, P.O. Box 912, Beijing,100083, China); Li, Fang Source: Proceedings of SPIE - The
International Society for Optical Engineering, v 8759, 2013, Eighth International Symposium on Precision
Engineering Measurements and Instrumentation
Database: Compendex
506. Single InAs quantum dot grown at the junction of branched gold-free GaAs nanowire
He, Yu (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese
Academy of Sciences, P.O. Box 912, Beijing 100083, China); Yu, Ying; Li, Mi-Feng; He, Ji-Fang; He,
Yu-Ming; Wei, Yu-Jia; Zha, Guo-Wei; Shang, Xiang-Jun; Wang, Juan; Wang, Li-Juan; Wang, Guo-Wei; Ni,
Hai-Qiao; Lu, Chao-Yang; Niu, Zhi-Chuan Source: Nano Letters, v 13, n 4, p 1399-1404, April 10, 2013
Database: Compendex
507. A chirped subwavelength grating with both reflection and transmission focusing
Lv, Xiaomin (College of Information Science and Engineering, Huaqiao University, Xiamen 361021,
China); Qiu, Weibin; Wang, Jia-Xian; Ma, Yuhui; Zhao, Jing; Li, Mengke; Yu, Hongyan; Pan, Jiaoqing
Source: IEEE Photonics Journal, v 5, n 2, 2013
Database: Compendex
508. Five-port optical router based on microring switches for photonic networks-on-chip
Ji, Ruiqiang (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Xu, Jiang; Yang, Lin Source: IEEE Photonics Technology
Letters, v 25, n 5, p 492-495, 2013
Database: Compendex
509. High efficiency and high power continuous-wave semiconductor terahertz lasers at ～3.1 THz
Liu, Junqi (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, China); Chen, Jianyan; Wang, Tao; Li, Yanfang; Liu, Fengqi; Li,
Lu; Wang, Lijun; Wang, Zhanguo Source: Solid-State Electronics, v 81, p 68-71, 2013
Database: Compendex
510. Far infrared response of silicon nanowire arrays
Fobelets, K. (Department of Electrical and Electronic Engineering, Imperial College London, Exhibition
Road, London SW7 2AZ, United Kingdom); Li, C.B.; Coquillat, D.; Arcade, P.; Teppe, F. Source: RSC
Advances, v 3, n 13, p 4434-4439, April 7, 2013
Database: Compendex
511. Hillock formation and suppression on c-plane homoepitaxial GaN Layers grown by metalorganic
vapor phase epitaxy
Zhou, Kun (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, Beijing 100083, People's Republic of China); Liu, Jianping; Zhang, Shuming; Li,
Zengcheng; Feng, Meixin; Li, Deyao; Zhang, Liqun; Wang, Feng; Zhu, Jianjun; Yang, Hui Source:
Journal of Crystal Growth, 2013
Article in Press
Database: Compendex
512. Stable p- and n-type doping of few-layer graphene/graphite
Meng, Xiuqing (Research Center for Light Emitting Diodes (LED), Zhejiang Normal University, Jinhua
321004, China); Tongay, Sefaattin; Kang, Jun; Chen, Zhanghui; Wu, Fengmin; Li, Shu-Shen; Xia,
Jian-Bai; Li, Jingbo; Wu, Junqiao Source: Carbon, v 57, p 507-514, June 2013
Database: Compendex
513. Improved efficiency of InAs/GaAs quantum dots solar cells by Si-doping
Yang, Xiaoguang (Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing 100083, China); Wang, Kefan; Gu, Yongxian; Ni, Haiqiao; Wang,
Xiaodong; Yang, Tao; Wang, Zhanguo Source: Solar Energy Materials and Solar Cells, v 113, p 144-147,
2013
Database: Compendex
514. Spectra of circular and linear photogalvanic effect at inter-band excitation in
In0.15Ga0.85As/Al0.3Ga 0.7As multiple quantum wells
Yu, Jinling (College of Physics and Information Engineering, Institute of Micro/Nano Devices and Solar
Cells, Fuzhou University, Fuzhou 350108, Fujian Province, China); Chen, Yonghai; Cheng, Shuying; Lai,
Yunfeng Source: Physica E: Low-Dimensional Systems and Nanostructures, v 49, p 92-96, 2013
Database: Compendex
515. Highly nonlinear property and threshold voltage of Sc2O 3 doped ZnO-Bi2O3-based varistor
ceramics
Xu, Dong (School of Material Science and Engineering, Jiangsu University, Zhenjiang 212013, China);
Wu, Jieting; Jiao, Lei; Xu, Hongxing; Zhang, Peimei; Yu, Renhong; Cheng, Xiaonong Source: Journal of
Rare Earths, v 31, n 2, p 158-163, February 2013
Database: Compendex
516. Generation of pure bulk valley current in graphene
Jiang, Yongjin (Center for Statistical and Theoretical Condensed Matter Physics, Department of Physics,
Zhejiang Normal University, Jinhua 321004, China); Low, Tony; Chang, Kai; Katsnelson, Mikhail I.;
Guinea, Francisco Source: Physical Review Letters, v 110, n 4, January 23, 2013
Database: Compendex
517. Structural, morphological and magnetic characteristics of Tb-implanted GaN and AlGaN films
Gao, Xingguo (College of Physics and Electronics, Shandong Normal University, Jinan 250014, China);
Liu, Chao; Yin, Chunhai; Tao, Dongyan; Yang, Cheng; Man, Baoyuan Source: Materials Science and
Engineering B: Solid-State Materials for Advanced Technology, v 178, n 6, p 349-353, April 1, 2013
Database: Compendex
518. Improvement of n/i interface layer properties in microcrystalline silicon solar cell
Zeng, Xiangbo (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors,
Chinese Academy of Sciences, Beijing 100083, China); Li, Jinyan; Xie, Xiaobing; Yang, Ping; Li, Hao;
Xiao, Haibo; Zhang, Xiaodong; Wang, Qiming Source: Key Engineering Materials, v 537, p 193-196,
2013, Inorganic Thin Films and Coatings
Database: Compendex
519. High-Q modes in defected microcircular resonator confined by metal layer for unidirectional
emission
Yao, Qi-Feng (State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese
Academy of Sciences, PO Box 912, Beijing 100083, China); Huang, Yong-Zhen; Lin, Jian-Dong; Lv,
Xiao-Meng; Zou, Ling-Xiu; Long, Heng; Yang, Yue-De; Xiao, Jin-Long Source: Optics Express, v 21, n 2,
p 2165-2170, January 28, 2013
Database: Compendex
520. 0.6-eV bandgap In0.69Ga0.31As thermophotovoltaic devices with compositionally undulating
step-graded InAsyP1-ybuffers
Ji, Lian (Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and
Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China); Lu, Shu-Long; Jiang, De-Sheng;
Zhao, Yong-Ming; Tan, Ming; Zhu, Ya-Qi; Dong, Jian-Rong Source: Chinese Physics B, v 22, n 2,
February 2013
Database: Compendex
521. Evolution of electronic structure in atomically thin sheets of ws 2 and wse2
Zhao, Weijie (Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore
117542, Singapore); Ghorannevis, Zohreh; Chu, Leiqiang; Toh, Minglin; Kloc, Christian; Tan, Ping-Heng;
Eda, Goki Source: ACS Nano, v 7, n 1, p 791-797, January 22, 2013
Database: Compendex
522. Band offsets and heterostructures of two-dimensional semiconductors
Kang, Jun (Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083,
China); Tongay, Sefaattin; Zhou, Jian; Li, Jingbo; Wu, Junqiao Source: Applied Physics Letters, v 102, n
1, January 7, 2013
Database: Compendex
523. The measurement of magneto-optical Kerr effect of ultrathin films in a pulsed magnetic field
Chen, Xi (SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing
100083, China); Qian, Xuan; Meng, Kangkang; Zhao, Jianhua; Ji, Yang Source: Measurement: Journal
of the International Measurement Confederation, v 46, n 1, p 52-56, January 2013
Database: Compendex