SIM UNIVERSITY
SCHOOL OF SCIENCE AND TECHNOLOGY
EMBEDDED EDGE-COUPLED BPF USING
MULTILAYER LTCC TECHNOLOGY FOR KABAND MULTI-CHIP-MODULE (MCM)
APPLICATIONS
STUDENT
: SOONG WEI QIANG (N0604430)
SUPERVISOR
: DR LUM KUM MENG
PROJECT CODE : JUL2010/ENG/003
A project report submitted to SIM University
in partial fulfilment of the requirements for the degree of
Bachelor of Engineering (or Bachelor of Electronics)
May 2011
ACKNOWLEDGEMENT
The Capstone Project Report signifies the apex of this undergraduate program.
Many difficulties were encountered along the journey and great amount of determination
and perseverance was needed to juggle between work and study commitments.
I sincerely thank SIM University for providing me this opportunity to prove myself,
offering excellent support and infrastructure essential to complete the capstone.
I am also grateful to my supervisor and mentor, Dr Lum Kum Meng for his guidance
throughout this period. Dr Lum often gave valuable advice which helped me overcome
problems faced along the way. Despite his busy schedule, Dr Lum took great effort to
organize periodic meetings and review on my progress consistently.
Lastly, I will like to express my gratitude to my family and co-workers who have been
supportive and understanding in times of need.
ENG499 CAPSTONE PROJECT REPORT
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ABSTRACT
This project presents a 7th order Chebyshev Edge-Coupled Band Pass Filter suitable for 5
and 28GHz band applications using multilayer Low Temperature Co-fired Ceramics
(LTCC) technology.
Design procedures are clearly illustrated with examples shown to demonstrate the proposed
coupling structures. Using LTCC substrate, geometric dimensions of coupled lines are
calculated, followed by simulation and optimization using Agilent Advanced Design
System (ADS) to obtain the desired filter response.
Multilayer LTCC technology allows for micro-sized design offering spurious free
performance and low insertion loss. Compared to other substrates, LTCC also offers 3-D
integration and vertical stacking capabilities. Adjacent resonators can be stacked on
different layers to achieve precise distance.
Due to limited budget and equipment in our testing environment, an alternative material
was considered. The FR4 which is cheaper and widely available was chosen as a suitable
replacement for LTCC. However, the material suffers more dielectric loss over higher
frequencies as compared to LTCC. The prototype design was further optimized and sent for
fabrication using FR4 substrate of dielectric constant 4.7 with height 1600  m , loss tangent
of 0.027. Hot Air Solder Levelling (HASL) and Organic Solderability Preservative (OSP)
finishing was applied to the end product.
The measurement was done using Agilent Network Analyzer E5062A available in SIM
University laboratory. Adaptive sweep was applied from frequency range (10MHz - 5GHz)
to observe the filter response. The readings are captured and compared with simulation
results.
The filter managed to achieve approximately 15% 3dB bandwidth, with an insertion loss of
-10.37dB and return loss of -7.045dB at center frequency of 1.291GHz.
ENG499 CAPSTONE PROJECT REPORT
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TABLE OF CONTENTS
Page
ACKNOWLEDGEMENT
i
ABSTRACT
ii
TABLE OF CONTENTS
iii
LIST OF TABLES
viii
LIST OF FIGURES
ix
LIST OF CHARTS
xii
CHAPTER ONE
INTRODUCTION
1
1.1
Background and Motivation
1
1.2
Objectives
1
1.3
Proposed Approach
2
1.3.1
Literature Review
2
1.3.2
Simulation Phase
2
1.3.3
Technical Phase
3
1.3.4
Overall Design Flow
4
1.4
1.5
Review of Critical Skills
5
1.4.1
Essential Skill for Project Handling
5
1.4.2
Strength and Weaknesses
5
1.4.3
Priorities for Improvement
5
Project Planning
6
1.5.1
Progress Checklist
6
1.5.2
Gantt Chart
7
1.5.3
Required Resources
8
ENG499 CAPSTONE PROJECT REPORT
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CHAPTER TWO
REVIEW OF THEORY AND PREVIOUS WORK
9
2.1
Literature Review on LTCC Technology
9
2.1.1 Definition of LTCC
9
2.1.2 Benefits of LTCC
10
2.1.3 LTCC Process
11
2.1.4 LTCC Applications
13
Literature Review on Microstrip Technology
15
2.2.1 Microstrip Structure
15
2.2.2 Wave in Microstrip
15
2.2.3 Effective Dielectric Constant and Characteristic
Impedance
16
2.2.4 Guided Wavelength
17
2.2.5 Synthesis of W/h
17
2.2.6 Coupled Lines
18
2.2.7 Even and Odd Mode Capacitance
18
Literature Review on RF Filter Design and Methodology
21
2.3.1 Definition of RF Filter
21
2.3.2 RF Filter Types
21
2.3.3 Filter Classification
22
2.3.4 Edge-Coupled Bandpass Filter
23
2.3.5 End-Coupled Bandpass Filter
26
2.3.6 Hairpin Line Bandpass Filter
26
2.3.7 Interdigital Bandpass Filter
27
2.4
Network Analysis and Scattering Parameters
28
2.5
Advanced Design System (ADS)
29
2.2
2.3
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2.6
Printed Circuit Board Finishing Techniques
30
2.6.1 Hot Air Solder Levelling (HASL or HAL)
30
2.6.2 Organic Solderability Preservative (OSP)
30
2.7
FR4 Substrate
32
2.8
Network Analyzer
32
CHAPTER THREE
PROJECT SELECTIONS
34
3.1
Selection of Substrate Material
34
3.2
Selection of Filter Methodology
34
3.3
Selection of Software
34
3.4
Selection of PCB Finishing
35
3.5
Selection of Measuring Equipment
36
3.6
Selection of SMA Connector
37
CHAPTER FOUR
FILTER DESIGN USING LTCC
38
4.1
Design of C-Band Filter using LTCC
38
4.1.1 ADS Setup for C-Band Filter
39
4.1.2 Dimensions of C-Band Filter
39
4.1.3 Initial Design for C-Band Filter
43
Design of Ka-Band Filter using LTCC
44
4.2.1 ADS Setup for Ka-Band Filter
44
4.2.2 Dimensions of Ka-Band Filter
45
4.2.3 Initial Design for Ka-Band Filter
49
Sensitivity Analysis (LTCC)
50
4.3.1 Effects of Adjusting Resonator Length (LTCC)
50
4.3.2 Effects of Adjusting Resonator Width (LTCC)
51
4.2
4.3
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4.4
4.3.3 Effects of Adjusting Resonator Line Gaps (LTCC)
52
Final Design
53
4.4.1 Final Design for C-Band Filter
53
4.4.2 Final Design for Ka-Band Filter
55
CHAPTER FIVE
FILTER DESIGN USING FR4
57
5.1
Design of Filter using FR4
57
5.2
ADS Setup for FR4 Filter
57
5.3
Dimensions of FR4 Filter
57
5.4
Sensitivity Analysis (FR4)
61
5.4.1 Effects of Adjusting Resonator Length (FR4)
61
5.4.2 Effects of Adjusting Resonator Width (FR4)
61
5.4.3 Effects of Adjusting Resonator Line Gap (FR4)
62
Final Design for FR4 Filter
63
5.5
CHAPTER SIX
FABRICATION AND ASSEMBLY OF FILTER PROTOTYPE
65
6.1
Gerber File Exportation
65
6.2
Assembly of Filter Prototype
67
CHAPTER SEVEN
COMPARISON OF MEASURED AND SIMULATION RESULTS
70
7.1
70
Measurement of Results
CHAPTER EIGHT
CONCLUSION
72
CHAPTER NINE
SUGGESTION FOR FURTHER WORKS
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vi
REFERENCES
74
APPENDIX A – TACONIC CER-10 Datasheet
76
APPENDIX B – DUPONT 951 Datasheet
78
APPENDIX C – FR4-86 Datasheet
80
APPENDIX D – SMA Connector Datasheet
82
APPENDIX E – 3D-EM view and Schematic Diagrams
85
APPENDIX F – Other LTCC Designs (C-Band)
87
APPENDIX G – Other LTCC Designs (Ka-Band)
90
APPENDIX H – Other FR4 Designs
93
APPENDIX I – Meeting Logs
96
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LIST OF TABLES
Page
1.1
Progress check list
7
1.2
Resources used for this project
8
2.1
LTCC Applications
14
2.2
Element values for Chebyshev prototype filter
25
2.3
Advantages and Disadvantages of HASL finishing
30
2.4
OSP process flow
31
2.5
Advantages and Disadvantages of OSP finishing
31
3.1
Comparison of software features
35
3.2
Comparison of different PCB finishing
36
4.1
Initial dimensions for C-Band filter
43
4.2
Initial dimensions for Ka-Band filter
49
4.3
Final dimensions of C-Band filter
53
4.4
Final dimensions of Ka-Band filter
55
5.1
Final dimensions for FR4 filter
63
7.1
Comparison between simulation and measured results
70
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LIST OF FIGURES
Page
2.1
Embedded passive elements
9
2.2
LTCC Diagram
10
2.3
LTCC Process
11
2.4
Cutting or Slitting of green sheets
12
2.5
Via Punching and Filling
12
2.6
Alignment device
(a) Plan view
(b) Side view
(c) Perspective view
12
2.7
Co-firing process
13
2.8
Structure of Microstrip
15
2.9
Cross sectional view of coupled microstrip lines
18
2.10 Quasi-TEM modes of microstrip pair
(a) Even mode
(b) Odd mode
20
2.11 Types of RF filter
22
2.12 Comparison of various filter response
23
2.13 Edge-Coupled Half Wavelength Resonator Filter
24
2.14 End-Coupled Bandpass Filter
26
2.15 Hairpin-Line Bandpass Filter
26
2.16 Interdigital Bandpass filter
27
2.17 Two port network with variables
28
2.18 Typical Bandpass filter response
29
2.19 OSP molecule types
31
2.20 Copper clad laminate FR-4
32
2.21 Large Signal Network Analyzer (LSNA)
33
ENG499 CAPSTONE PROJECT REPORT
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3.1
Agilent E5062A Network Analyzer
36
3.2
Two-holed flanged SMA connector jack
37
3.3
Different types of SMA connectors
37
4.1
LTCC bandpass filter
(a) Schematic view
(b) 3-D view
38
4.2
(a) Substrate layer
(b) Layout layers
(c) S-Parameters settings for 5.3GHz filter
39
4.3
LineCalc for input lines (C-Band)
40
4.4
Setting of single mode 50ohms port (C-Band)
41
4.5
LineCalc for coupling lines (C-Band)
42
4.6
Initial results and layout for C-Band filter
43
4.7
(a) Substrate layer
(b) Layout layers
(c) S-Parameters settings for 28GHz filter
44
4.8
LineCalc for input lines (Ka-Band)
45
4.9
Setting of single mode 50ohms port (Ka-Band)
46
4.10 LineCalc for coupling lines (Ka-Band)
47
4.11 Initial Results and layout for Ka-Band filter
49
4.12 Final results and layout for C-Band filter
54
4.13 Final results and layout for Ka-Band Filter
56
5.1
(a) Substrate layer
(b) Layout layers
(c) S-Parameters settings for FR4 filter
57
5.2
LineCalc for input lines (FR4)
58
5.3
Setting of single mode 50ohms port (FR4)
59
5.4
LineCalc for coupling lines (FR4)
60
5.5
Final results and layout for FR4 Filter
64
6.1
Screen shot of gerber exportation from ADS
66
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6.2
Screen shot of gerber viewer
66
6.3
Fabrication process for multi-layer PCBs
67
6.4
Filter layers
(a) Filter layer orientation
(b) Gerber view
(c) OSP finishing
(d) HASL finishing
68
6.5
Picture of assembled filter prototype
69
7.1
(a) Agilent E8362B Network Analyzer
(b) Two sets of BNC adaptors with BNC to SMA connectors
70
7.2
(a) Simulation results
(b) Measured results
71
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LIST OF CHARTS
Page
1.1
Flow of overall approach and objectives
4
1.2
Gantt chart
7
4.1
Plot of Length against Frequency
50
4.2
Plot of Width against S-Parameters
51
4.3
Plot of Spacing against S-Parameters
52
5.1
Plot of Length against Frequency
61
5.2
Plot of Width against S-Parameters
62
ENG499 CAPSTONE PROJECT REPORT
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CHAPTER 1: INTRODUCTION
1.1 Background and Motivation
The huge advancement in wireless communications today prompts for higher demand
in faster speed and wider bandwidth applications. However, problems arise when
integrating analogue filter to a chip due to inductors giving a low quality factor at
high frequencies.
The Low -Temperature Co-Fired Ceramic (LTCC) comprises of dielectric and
metallic conductor design produced in multiple layers. Each dielectric layer is
typically not more than 0.004 inches, with relative permittivity at 10.
The LTCC technology provides ease of integration between stripline based circuits
and substrate material thus they are widely used in present microwave and millimetre
wave applications. The advantage of high three-dimensional (3-D) integration and
vertical stacking capabilities over other substrate materials greatly aids in reducing
overall size and production cost. Other factors like low dielectric tangent loss and
high frequency properties make it suitable for this purpose.
This report presents the design of an edge-coupled C and Ka-Band wide band pass
filter using LTCC technology. The co-firing process produces shrinkage making it
difficult to control precise distance between two adjacent resonators needed for
coupling. This issue was resolved by locating adjacent resonators on different layers,
separated by LTCC tape.
To add on, filter properties such as bandwidth, sharpness and insertion loss can be
controlled by overlapping two adjacent resonator ends.
1.2 Objectives
The main focus of this project is to design an Edge-Coupled wide BPF incorporating
multilayer LTCC technology suitable for C-Band and Ka-Band Multi-Chip-Modules
(MCM) applications.
i.
ii.
iii.
To understand fundamentals of LTCC technology and various RF
methodology suitable for filter design.
To learn ADS for design and simulation of proposed filter
To develop time management skills and ensure project targets are delievered.
ENG499 CAPSTONE PROJECT REPORT
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1.3 Proposed Approach
It is crucial to adopt a systematic approach towards completing the project. To ensure
project objectives are met on time, three main approaches are defined and elaborated
in the below sections.
i.
ii.
iii.
Literature Review
Simulation Phase
Technical Phase
1.3.1 Literature Review
It is important to have good understanding of relevant subject topics before
commencing on the project. This part will focus on intensive background study and
Literature Review on the various methodology used in this project.
Scope of research topic includes,
i.
ii.
iii.
iv.
v.
vi.
LTCC Technology
RF Filter Design Methodology
Microstrip Technology
Agilent Advance Design System (ADS) fundamentals
PCB fabrication and types of finishing
Functions and Usage of the Network Analyzer
1.3.2 Simulation Phase
Advanced Design System (ADS) software is used to create schematics and layouts for
the proposed filter prototype. One main feature of ADS is the inbuilt controller which
allows the setup of s-parameters (Scattering Parameters) for simulation. Based on the
results, we can conclude if the proposed filter is working to expectations.
i.
ii.
iii.
iv.
v.
vi.
Determine the RF filter methodology to employ.
Determine substrate layer and properties.
Choose the operating frequency.
Calculate physical dimensions such as microstrip length, width, line gaps.
Model the proposed design using ADS.
Analyze the filter response from ADS momentum simulation.
ENG499 CAPSTONE PROJECT REPORT
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1.3.3 Technical Phase
This phase will emphasize on the improving the 1st filter design and hardware
fabrication of the filter prototype using FR4 substrate. Once the filter is fabricated,
measurements will be taken using network analyzer in the laboratory.
Breakdown of steps required,
i.
ii.
iii.
iv.
v.
vi.
vii.
viii.
ix.
Determine FR4 substrate layers and properties.
Set operating frequency to 1.5GHz.
Calculate new physical dimensions based on FR4.
Model the proposed design using ADS.
Hardware fabrication
Perform measurement using network analyzer.
Comparison of measurement and simulation results
Conclusion of results
Suggestions for further improvements
ENG499 CAPSTONE PROJECT REPORT
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1.3.4 Overall Design Flow
The overall approach is presented in the flowchart stated below.
START
(Technical Phase)
(Literature Review)
Background study on various
methods employed for this
project
Further modelling of the filter
design using FR-4 substrate with
LTCC technology (2nd Design)
(Simulation Phase)
Determine substrate layers
and properties
Determine parameters like
mesh frequency and port
impedance etc
Fabrication of filter prototype
(2nd Design)
Measure the actual results
using network analyzer
Determine dimensions such
as line gap, width, length of
strip line arrays
Model the filter design using
ADS (1st Design)
Fabrication errors?
Troubleshooting process
Comparison of actual vs
simulated results
No
Achieve Design
objectives?
Yes
Analyze s-parameter results
from ADS momentum
simulation
No
Suggestion for
improvements to enhance
performance
Yes
Achieve Design
objectives?
Final product achieved
END
Chart 1.1 Flow of overall approach and objectives
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1.4 Review of Critical Skills
The main challenge of a project lies in self discipline, proper planning and managing
resources available to complete project goals.
1.4.1 Essential Skills for Project Handling
To efficiently handle a project, essential skills are required. This section identifies key
areas to improve based on strength, weaknesses and priorities.
i.
ii.
iii.
iv.
v.
vi.
vii.
viii.
Knowledge in LTCC Technology
Knowledge on edge-coupled filter and other RF bandpass filter design
Knowledge on Microstrip fundamentals and filter implementation
Knowledge on various multilayer substrate and properties
Modelling of filter design using ADS
Scattering Parameters (S-Parameters) response
Functions and usage of Network Analyzer
Project Management skills
1.4.2 Strengths and Weaknesses
Identifying personal strengths and weaknesses help to mark down key areas for
improvement,
List of Strengths,
i.
ii.
iii.
iv.
Knowledge gained from modules such as Signal and Systems, Digital Signal
Processing and Wireless Communications have allowed better understanding
of important project concepts.
Past experience in designing a micro mouse system also help strengthen my
project management skills.
Various journals and reference books help provide background information
and design implementation methods.
Guidance from supervisor throughout the project period
List of Weaknesses,
i.
ii.
iii.
iv.
v.
Need to have better understanding on wireless communications and filter
characteristics
Unfamiliar with RF filter design and LTCC technology
Need to gain more knowledge on microstrip and multi-chip-module
applications
Need to familiarize with using ADS
No prior experience in using network analyzers
1.4.3 Priorities for Improvement
The following list states area of weaknesses highlighted for improvement.
ENG499 CAPSTONE PROJECT REPORT
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i.
ii.
iii.
iv.
v.
vi.
Must understand LTCC technology and advantages
Must understand concept of edge coupled filter design
Must know microstrip technology
Must be able to model filter design and perform simulation using ADS
Must understand the filter response and how to improve its performance
Must be able to perform testing on fabricated filter using network analyzer
1.5 Project Planning
This section highlights the project execution plan in stages, expected dateline and
checklist for progress throughout the entire project duration.
1.5.1 Progress Checklist
This checklist provides summary on the list of objectives to achieve and constantly
updated in stages to make sure all bases have been covered.
DATE TASK LIST
CHECK LIST
Literature Review
Aug
10
To
Sep10
1.
Background
research
and
Literature review on the following
topics:

i)
ii)
iii)
iv)
v)
LTCC technology
RF Filter Design Methods
Microstrip Technology
Advanced Design System
(ADS) Fundamentals
Functions and Usage of the
Network Analyzer





2. Project Proposal Submission
Simulation Phase
Sep 10 3. Functions and Usage of Advanced
To
System Design (ADS)
Dec 4. Modelling of filter prototype using
10
ADS (1st Design)
5. S-Parameter Simulation
6. Interim Report Submission



Technical Phase
ENG499 CAPSTONE PROJECT REPORT
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Jan 11 7. Further modelling of filter design
To
using FR-4 substrate (2nd Design)
Feb 11 8. Hardware fabrication using FR-4
substrate
9. Measurement of actual filter
response using network analyzer
10. Comparison of measured and
simulation results
11. Conclusion. Achieved project
objectives?

Mar
11
To
Jun 11



12.Suggestions
for
improvement
13. Capstone Project
Submission
14. Preparation of Poster
15. Oral Presentation
further
Report




Table 1.1 Progress check list
1.5.2 Gantt Chart
The Gantt chart below summarizes the list of tasks and the estimated timeframe
required to start and complete the objectives. The 3 main topics highlighted in red are
Literature Review, Simulation Phase and Technical Phase which are pre-defined
earlier under proposed approach in chapter 1.
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Chart 1.2 Gantt chart
1.5.3 Required Resources
The following table list down the resources used to complete this project.
PROJECT
RESOURCE
Reference books and
related journal papers
Agilent ADS software
for modelling and
simulation
AVAILABILITY
SIM Library, National Library, Internet
Evaluation version is available at Agilent website
(License renewable every 3 months)
Web URL :
http://www.home.agilent.com/agilent/download.jspx
?nid=-34346.0&cc=US&lc=eng&pageMode=DL
Network Analyzer
Available in SIM laboratory
(300KHz – 300GHz)
Spectrum Analyzer
Available in SIM laboratory
(9KHz – 3GHz)
(Optional)
Signal Generator (9KHz Available in SIM laboratory
– 3GHz)
(Optional)
Table 1.2 Resources used for this project
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CHAPTER 2: REVIEW OF THEORY AND PREVIOUS
WORK
2.1 Literature Review on LTCC Technology
2.1.1 Definition of LTCC
Low Temperature Co-fired Ceramic (LTCC) can be defined as glass-ceramic
compound suitable for integrating inductors, capacitors and resonant components into
multilayer structures.
In today’s industry, there is high demand for technology to realize complex integrated
circuits into multilayer structures. Passive components such as resistors, inductors and
capacitors are usually soldered and surface-mounted onto their terminals on a printed
circuit board. This conventional way is phasing out to Embedded Passive Technology
(EPT) which enables the passive components to be embedded into inner layers.
Some of the benefits from using EPT include,
i.
ii.
iii.
iv.
v.
Higher reliability
Reduced circuit size due to embedded components
Higher propagation speed signals
Better immunity to electromagnetic interference
Reduction in manufacturing cost
ENG499 CAPSTONE PROJECT REPORT
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Figure 2.1 Embedded passive elements
Due to these properties, LTCC substrates offer higher volume, lower cost and
compact sizing for various microwave applications. They are manufactured by
stacking up laminating green sheets also known as “Green Tape” in layers on top of
each other in parallel before co-firing them together.
The process of LTCC is similar to HTCC process but one benefit is the possible usage
of low resistivity conductors like gold, silver and alloys with palladium and platinum
instead of tungsten and molybdenum due to its low firing temperature. These two
technologies are also categorized based on the firing temperature range.
For LTCC (In general 850 - 870 °C, T ≤ 1000 °C)
For HTCC (Above 1000 °C, T ≥ 1500 °C)
However, LTCC technology is not totally flawless. Low thermal conductivity of the
ceramic tape, materials and fabrication processes in the past has greatly limit power
and radio frequency application to lower GHz range. One way to help rectify this
problem is by implementing thermal vias to increase the conductivity of the substrate.
[1][2]
Figure 2.2 LTCC Diagram
2.1.2 Benefits of LTCC
This section lists down the benefits of using LTCC technology.
i.
ii.
LTCC economize manufacturing time with its parallel processing capabilities
Mass production is possible with LTCC due to its ability to automate several
process steps at a time
ENG499 CAPSTONE PROJECT REPORT
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iii.
iv.
v.
vi.
vii.
viii.
ix.
x.
xi.
xii.
xiii.
xiv.
xv.
LTCC offers ease of fabrication with automatic package device functions thus
reducing overall production cost
Tapes of different composition can be produced with desired layer properties
LTCC technology allows modification of thermo-physical properties
Able to integrate electronic circuits due to its hybrid properties
Offers Three-Dimensional (3-D) integration capabilities
Easy to cut and customize into different shapes and sizes
Greatly reduce the circuit size up to 50% by embedding passive components
within the substrate
Able to contain large number of signal layers
Able to work at frequencies of 30GHz or higher
High temperature resistance makes it suitable as a material even in harsh
ambient conditions (Up to 350 °C)
Higher thermal conductivity then general PCBs
Able to work with equipment using thick film conventional technology
Can be used together with conductive materials like gold and silver due to its
excellent electrical properties [1][2]
2.1.3 LTCC Process
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Figure 2.3 LTCC Process
In this section, different ways of processing LTCC are studied. It is similar to HTCC
with lesser steps and complications.
Production and Cutting of Green Sheets: The green sheets mainly come in a single
row and have to be unrolled onto a clean table to be cut up and processed. Laser
power is carefully controlled during slitting to avoid accidental firing of the sheet.
Some tapes like Dupont Green Tape require pre conditioning. The Green sheet has to
be baked for 30 minutes at approximately 120 °C based on material and
manufacturing properties. Orientation marks and lamination holes are created using
blanking dies. Vias may be formed by punching or drilling using low powered laser.
ENG499 CAPSTONE PROJECT REPORT
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Figure 2.4 Cutting or Slitting of green sheets
Via Punching and Filling: After pre processing, via holes and cavity openings are
mechanically punched. Via filling process has limited options. It works by filling up
vias thru thick film screen printer. Another way is to fill the vias using a special
extrusion via filler under working pressures of around 4-4.5 bars. A mask is required
both ways. It is advisable to create the holes concerned of the mask lesser then the
blind vias diameter to prevent filling rate errors. This method is known as the Screen
Printing Technique.
Figure 2.5 Via Punching and Filling
Printing: Co-fireable conductors are printed on the sheet using a conventional thick
screen printer. The screen size is fixed at 250 – 325 emulsion type. Similar to via
printing operations, a porus stone assist in holding the tape in position. The vias and
conductors are placed into the oven for drying after printing.
Stacking: The alignment process stack up multiple layers together based on vias and
wiring. Precautions should be taken to ensure the green glass ceramic do not make
direct contact with the alignment device during this stage.
Figure 2.6 Alignment device a) Plan view b) Side view c) Perspective view
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There are two methods of laminating the tapes.
Uniaxial lamination: The tapes are pressed in the middle of heated platens under
temperatures of around 70 °C for roughly 10 minutes under 200 bar pressure. The
tapes have to be rotated 5 minutes later. This method is known to create high
shrinkage issues.
Isostatic lamination: The tapes are stacked up and vacuum packed in a coil and
pressed in hot water under 350 bar pressure. Temperature conditions are similar to
Uniaxial lamination mentioned above.
Co-firing: The laminates are fired in a single step smooth flat surfaced tile. It is
important to follow a fixed firing profile which requires a programmable box kiln.
Standard profiles have conditions of rising temperature at steady 2-5 °C pace per 60
seconds up till 450 °C. The dwell time is estimated to be 1-2 hours. If organic burnout
occurs, the temperature is to be raised between 850 °C and 875 °C with 15 minutes
timeframe. Material properties such as size and thickness will affect the duration of
co-firing which usually lasts 3-8 hours.
Figure 2.7 Co-firing process
Post-firing: It is necessary to post-fire certain materials. This means the paste is to be
applied after firing the tape and re-fired once more. Post-firing condition depends on
the material used.
Singulation: Some fired parts need to cut up into different shapes and sizes. We can
perform these by using a post fire dicing saw, ultrasonic cutter or laser. [1][2][3]
2.1.4 LTCC Applications
LTCC is widely recognized as one of the leading multi-layer technologies for the past
decade and is critical in many applications today. They are used to produce Multichip
Ceramic Modules (MCM-C) meant for packing integrated circuits and various
microwave device. Many sensors and actuators also utilize LTCC due to their
excellent electrical and mechanical properties. LTCC technology is also well
established in military and space environments for low volume, high performance
applications (Transmitters, Receivers, and Radars etc). We can also find them in
filters, mobile phones and many other wireless applications. The uses of LTCC in
Automobile Industry are also wide. Gearbox and engine in an automobile vehicle also
ENG499 CAPSTONE PROJECT REPORT
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makes use of LTCC in the process, as well as anti lock brakes, Global Positioning
System (GPS) and many more. [4]
Table 2.1 below show some common LTCC applications for various frequency bands.
S/NO
1
Application
Dual-band power
amplifier
Frequency
900 – 1800
MHz
2
Bluetooth module with
integrated antenna
2.45 GHz
3
Multiplier
8 – 24 GHz
4
Band pass filter
24.5 – 25.5
GHz
5
Point to point
transceiver module
27.5 – 29.5
GHz
6
Transitions from panar
to rectangular
waveguide
30 – 35
GHz
Photo
Table 2.1 LTCC applications
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2.2 Literature Review on Microstrip Technology
Microstrips can be referred as electrical transmission lines used on Printed Circuit
Board (PCB) technology meant for transmitting microwave frequency signals. The
architecture consists of conducting strip separated from ground plane on dielectric
substrate material. It can be used as replacement for microwave components such
filters, antennas and power dividers, greatly reducing circuit space and cost.
2.2.1 Microstrip Structure
Microstrip architecture comprises of three layers. The first layer is usually conducting
strip having width W, thickness t. The second layer below the conducting strip lays
substrate material with relative dielectric constant  r and thickness h. The last and
bottom layer of the substrate is usually ground (conducting) plane.
The width W and thickness t of the conducting strip affects characteristic impedance
and frequency.
Making use of microstrip lines can be beneficial in many ways. Such as more
compact sizing and the ease of integration with other microwave components. [5]
Figure 2.8 Structure of Microstrip
2.2.2 Wave in Microstrip
We can refer to microstrips as inhomogeneous structure as fields in microstrip extend
towards free space above and dielectric substrate below. As a result, pure TEM waves
are not supported. Pure TEM waves only consist of transverse components, and its
propagation velocity depends much on the permittivity  and permeability  of the
material.
This situation can change with the introduction of two guided-wave media (air and
dielectric substrate). The waves in microstrip lines will have no vanished longitudinal
components of electric and magnetic fields, thus the propagation velocities will
depend on not only material properties, but also on the microstrip physical properties.
[5]
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2.2.3 Effective Dielectric Constant and Characteristic Impedance
The Quasi-TEM mode occurs when longitudinal components averages less then
transverse components and is valid for most microstrip operating frequencies range.
Two important characteristics of microstrip in transmission can be identified as:
Effective dielectric constant,  re
Characteristic Impedance, Z c
Based on the above characteristics and quasistatic analysis, we can define the
following capacitance value stated below, where Cd is the capacitance per unit length
based in present dielectric substrate, and Ca is per unit length with free space,
whereby velocity of wave in free space is c  3.0 x108 m / s . [5]
 re 
Cd
Ca
(1)
Zc 
1
c Ca Cd
For narrower microstrips, where
 r  1  r 1 
W
 1 , we have,
h
h
 re 

1  12 
2
2 
W
0.5

Zc 

2  re
(2)
W
 8h
In   0.25 
h
W
For wider microstrips, where
W
 1 , we have,
h


 re   r 1   r 1112 h 
2
2
 W  
 0.04 1  
h 


2

0.5
(3)
W
 W
W

Zc 
 h  1.393  0.677 In  h  1.444  
 re 


1
Based on the above expressions, the characteristic impedance in free space   Z0 :
Z0 
0
 120 , with:
0
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0 : Vacuum permeability
 0 : Vacuum permittivity
2.2.4 Guided Wavelength
The guided wavelength from quasi-TEM mode of microstrip can be derived once we
determine the effective dielectric constant. [5]
g 
0
 re
(5)
Where 0 equates to free space of wavelength at operating or center frequency f.
It is also necessary to derive the electrical length  once values for physical length l
have been calculated.
  l 

(6)
2
With the guided wavelength value, physical length of the microstrip can be found
using the below equations.
For half wavelength,
l
g
(7)
2
For quarter wavelength,
l
g
(8)
4
2.2.5 Synthesis of W/h
A common problem faced by engineers designing microwave circuits is to determine
the width of microstrip and getting the desired impedance. The follow equations help
to calculate the synthesis effectively. [5]
For
W
 2,
h
W
1

 4  exp( A)  exp(  A) 
h
2

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1
(9)
18
With, A 
For
 Zc
Z0
2( r  1) 
 r 1 
0.11 
 0.23 

r 1 
r 
W
 2,
h
W  r 1 
0.61 2

  B  1  Log (2 B  1) 
 L og exp( B  1)  0.39 
h
 r 
 r  
With, B 
(10)
 Z0
2  r Zc
2.2.6 Coupled Lines
It is common for microstrip filters designers to make use of coupled microstrip lines
technology. A pair of microstrip lines of width W placed in parallel, also described as
edge-coupled configuration separates each other by a line gap s. This method enables
support for two quasi-TEM modes, which is the even and odd mode. Both microstrip
lines carry equal charges and voltage potentials in even mode which produces a
magnetic wall at the symmetry plane. The process is the reverse in odd mode, with
strip lines carrying opposing potential and charges. Both modes can be excited
simultaneously, but vary in phase velocity and permittivity. To summarize, both
modes can be classified based on impedance properties and dielectric constants. [6][7]
Figure 2.9 Cross sectional view of coupled microstrip lines
2.2.7 Even and Odd mode Capacitance
The properties of even and odd mode impedance and actual dielectric constants of the
paired coupled microstrips can be defined in a similar fashion to a lone microstrip
represented by Ce and Co . [6]
The even and odd mode capacitance can be defined from the below mention
equations,
Ce  C p  C f  C f ,
Co  C p  C f  Cgd  Cga
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From the above equations, C p represents the plate parallel capacitance in middle of
strip and ground plane.
It can be derived as,
C p   o rW / h
The fringe capacitance can be denoted as C f , and based on a single microstrip, can be
derived as,
2C f  re /(cZ c )  C p
The modification of C f due to other microstrip lines is C f , ,
Cf , 
Cf
1  A(h / s) tanh(8s / h)
, A  exp  0.1exp(2.33  2.53W / h
In regards to the odd-mode, C gd and Cga , denotes the fringe capacitance for air and
dielectric area across the coupling gap. The capacitance C gd may be located from
corresponding coupling strip lines, with spacing given as 2h. Thus, it can be expressed
as,
Cgd 
0.02  r
 o r 
 s 
1
ln c | oth(
)   0.65C f (
1 2 )

4h 
s/h
 r

We can modify the capacitance Cga using the corresponding coplanar strips
capacitance value. It can be express as,
Cga   o
s/h
K (k ' )
, k '  1 k 2
, where k 
s / h  2W / h
K (k )
Figure 2.10 Quasi-TEM modes of microstrip pair: (a) even mode; (b) odd mode
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2.3 Literature Review on RF Filter Design and Methodology
2.3.1 Definition of RF Filter
Radio Frequency (RF) filters can be defined as electronic filter type. The main
purpose is to filter signals from wireless transmission under medium to high
frequency range (MHz to GHz) supporting various applications such as Radio, TV
broadcast, mobile phones and broadband internet (Wi-Fi). There are widely used as
building blocks for diplexers to combine and separate multiple frequency bands.
In general, pass band signals are signals which are allowed by the filter to pass thru.
This band of frequencies often occur below the filter cut off frequency which falls
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50% (-3dB) of the in band level, assuming a fixed input level. A band of frequencies
rejected is defined as the stop band. It is taken as the starting point where the rejection
level occurs.
To be realistic, it is not possible to obtain a perfect pass filter as some loss will
definitely occur within the pass band. Infinite rejection in the stop band is also
unattainable. Note that transition will always occur between the pass band and stop
band. When the response curve drops, the rejection level will increase as frequency
travels from the pass band to stop band.
To summarize, the use of RF filters for controlling acceptance or rejection of
frequency signals makes it valuable for RF engineers. [8][9]
2.3.2 RF Filter Types
There are four main types of filter with different properties of its own. Each filter has
its unique way of accepting or rejecting signal. By applying the relevant filter type,
one can customized how signals are being accepted or rejected. The four types of RF
filter are mainly:
i.
ii.
iii.
iv.
Low pass filter
High pass filter
Band pass filter
Band reject filter
Band-pass filters: Works by allowing certain frequencies within a range and
attenuates outside the range. The RLC circuit can also be suggested as a type of
analogue band-pass filter. An alternate way to achieve band-pass effect is by
combining low-pass filter with a high-pass filter.
Band-stop filter: Otherwise known as the band-rejection filter, it does not alter any
frequency signals but attenuates specific stated ranges to extreme low levels. It works
directly opposite to the band-pass filter. The capability to reduce feedback without
affecting much of the frequency spectrum means they can be implemented in live
sound reproduction systems such as audio instruments amplifier and PA systems.
High-pass filter: Allows high frequency signals and attenuates frequencies below the
cut-off frequency range.
Low-pass filter: The direct opposite of the high-pass filter. It only passes low
frequency signals and attenuates signals with frequencies above the cut off frequency.
Frequency attenuations can be inconsistent and depends on various filter conditions.
For audio purposes, the filter is also known as the treble-cut filter or high-cut filter.
They help to smoother the signals and reduce short-term fluctuations. [8][9][10]
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Figure 2.11 Types of RF filter
2.3.3 Filter Classification
The uses for filters are vast. Different results can be obtained from modifying basic
filter structures to meet different criteria. For example, in band ripple circuits, the
fastest transition to the ultimate roll off, and the highest out of band rejection are
criteria for different circuit values. By optimizing these values, we can obtain filters
with different performance.
Butterworth filters contribute maximum in band flatness and rolls off towards zero in
the stop-band. Its characteristics show monotonic ripples in the pass-band or stopband.
Chebyshev filters provide the fastest roll off once the cut off frequency has been
reached. They help to minimize error rate between the idealized and actual filter
characteristic over the range of the filter, but with ripples in the band pass.
Bessel filters has the best step response, providing optimum in-band phase response.
Elliptical filters contains huge in band and out band ripple. As the degree of ripple
tolerance increases, the rate to ultimate roll-off also increases.
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Figure 2.12 Comparison of various filter response
Generally, RF filter design above the 500MHz range can be hard to implement using
discrete components due to wavelength complications affecting the filter
performance.
To overcome this, it is necessary to convert lump component filters into distributed
elements form.
For example, the Richards designed transformation tool that allows open and shortcircuit transmission line segments to emulate inductive and capacitive properties of
discrete components.
It is also crucial to convert an originally complex filter design to a more suitable
realization form. For instance, it is easier to implement a shunt stud line as compared
to implementing series inductance using short-circuit transmission line segment. We
can use Kuroda’s identities to ease the conversion process. [8][11]
2.3.4 Edge-Coupled Bandpass Filter
Edge-coupled bandpass filters are constructed in a way whereby the adjacent
resonators are parallel to each other along half of their length. This arrangement
allows for larger coupling between resonators in a given space area. They are suitable
for wide band applications but one downside is radiation which can be overcome by
shielding.
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Figure 2.13 Edge-Coupled Half Wavelength Resonator Filter
Parameters are formed from the admittance inverter ( J jj 1 ) thru the quarter wave
transformer.
For the first coupling structure,
J 01
 FBW

Y0
2 g0 g1
(11)
For subsequent coupling structures,
J jj 1
Y0

 FBW
2
1
, j  1 to n  1
g j g j 1
(12)
For the last coupling structure,
J n,n 1
Y0

 FBW
2 g n g n 1
(13)
Where g0 , g1...gn comprises the element of a ladder-type low-pass prototype with
normalized cut-off c  1 and FBW makes up the fractional bandwidth of the filter.
J jj 1 defines J-inverters characteristic admittance and Y0 termination defines line
characteristic admittance. To calculate J-inverters from the above equations, the odd
and even mode characteristic impedances of the coupled microstrip line resonators
can be derived by the following equations.
The value g refers to prototype elements.
1
The characteristics admittance Y0 =
whereby Z 0 = 50 in general cases.
Z0
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2  1
) for 2 and
0
1 are the high and low cut-off frequency and 0 is the center frequency.
FBW or (  ) can be defined as the standardized bandwidth (  
At any point of time, relative polarity of voltages along a direct coupling structure can
be similar or opposite to each other. We can refer to this opposing phenomenon as the
“even mode” and “odd mode’. The equations for characteristics impedance of the odd
and even modes are stated next:
For even mode,
2
1  J j , j 1  J j , j 1  
( Z 0e ) j , j 1  1 

  j  0 to n
Y0 
Y0
Y
 0  

(14)
For odd mode,
2
1  J j , j 1  J j , j 1  
( Z 0o ) j , j 1  1 

  j  0 to n
Y0 
Y0
Y0  



(15)
Once the values Z 0e and Z0o are calculated, using equations defined earlier in sections
2.2.4, the length, width and gap of the coupling region can be determined.
The length of coupling region:
l' j 
gj
4
 2d
(16)
Considering d jj 1 remains constant throughout and offset value d = 0.165 x h where h
is the substrate material thickness.
Table 2.2 shows the element values of Chebyshev band-pass prototype with 0.1 –dB
ripple. [12]
Table 2.2 Element values for Chebyshev prototype filter ( g0  1.0, c  1)
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2.3.5 End-Coupled Bandpass Filter
The end-coupled bandpass filter has open-end microstrip resonators roughly half
wavelength long towards the center frequency. Coupling is generated from gaps
between two adjacent ends, thus it is also known otherwise as the gap-coupled filter.
In such cases, the gaps can be compared to inverters which reflect high impedance
level at the end of each half wavelength coupling resonator. This causes the resonators
to exhibit shunt-resonator properties. [12]
Figure 2.14 End-Coupled Bandpass Filter
2.3.6 Hairpin Line Bandpass Filter
Hairpin-line bandpass filters are compact in size due to their unique design which
consists of folded half wavelength, parallel-coupled resonators forming a distinct “U”
shape. This concept is otherwise known as the hairpin resonator.
To achieve proper coupling, it is necessary to control the coupled-line lengths and
make sure the two arms of each hairpin structure have ample spacing between them.
[12]
Figure 2.15 Hairpin-Line Bandpass Filter
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2.3.7 Interdigital Bandpass Filter
Interdigital bandpass filters are widely common in microstrip design circuits. The
structure is generally built from arrays of quasi-TEM-mode line resonators. The
electrical length is about 90 degrees towards the center frequency. Each adjacent
microstrip has one end open-circuited and the other end short-circuit in an alternating
pattern.
To summarize, the physical dimensions of the filter varies and is not consistent
throughout depending on the coupling required. The filter input transmission lines are
tapped and impedance is altered to match the source/load characteristic admittance.
[12]
Figure 2.16 Interdigital bandpass filter
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2.4 Network Analysis and Scattering Parameters
Filter networks form critical portions in numerous RF/Microwave applications.
Microwave equipments should be able to accept/reject or mix/split different range of
frequencies. The ways of constructing the filter topologies might vary, but the concept
of network topology remains constant.
Figure 2.17 Two port network with variables
Scattering parameters also known as S-Parameters can be represented as wave
components.
S11 
b1
Reflection power at Port 1
|a2 0 ,
a1
Incident power at Port 1
S12 
b1
Transmission power at Port 1
|a1 0 ,
a2
Incident power at Port 2
S 21 
b2
Transmission power at Port 2
|a2 0 ,
a1
Incident power at Port 1
S 22 
b2
Reflection power at Port 2
|a1 0 ,
a2
Incident power at Port 2
It can be noted that S11 and S 22 are reflection co-efficient while S12 and S 21 are
transmission co-efficient and an  0 indicates zero reflection from the terminal
impedance at port n.
Certain advantages of S parameters can be helpful in analyzing networks. Such as for
reciprocal networks, we can assume that S12  S21 . For identical networks in
symmetric, S11  S22 , meaning symmetrisation also reciprocates.
A ideal filter response should have the reflection co-efficient S11 and S 22 better or
lesser then -10dB and transmission co-efficient S12 and S 21 to be as close as possible
to 0, meaning to achieve a flat S 21 response. [13]
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Figure 2.18 Typical bandpass filter response
2.5 Advanced Design System (ADS)
Agilent Advanced Design System (ADS) is currently one of the best electronic design
and automation software used for RF, microwave and signal integration applications.
ADS have successfully pioneered leading innovation and commercial technologies
like X-parameters*, Momentum and 3-D EM simulators which are highly adopted by
major companies in the following industries (Aerospace, Wireless communication and
Networking and Defence). ADS’s integrated platform provide circuit-system-EM-cosimulation, standard full based design and verification with wireless libraries for
applications such as WiMAX, LTE, multi-gigabit per second data links, radar and
satellite related applications.
With ADS, engineers can enjoy the convenience of preparing schematic drawings,
layouts and simulation without the need for installing multiple software system.
Some key features of ADS include:
i.
ii.
iii.
Harmonic Balance: Enable analysis for non-linear circuits excited with multitone source and preset simulation for RF, microwave and various circuit
design
Circuit Envelope: To assist in simulation for digitally modulated RF signals.
Also contains templates for RF systems design.
Momentum G2: 3-D planar electromagnetic (EM) simulator used for
analyzing passive circuits. [14]
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2.6 Printed Circuit Board Finishing Techniques
It is necessary to ensure good finishing between the components and circuit board
interface to protect the exposed copper threads and preserve solderability so as to
minimize failure rate. In this section, we explore some common ways of employing
finishing to PCBs. [15]
2.6.1 Hot Air Solder Level (HASL or HAL)
HASL works by immersing PCB into molten solder. For most application involved,
the solder alloy used is tin-lead. The surface tension of molten solder contributes to
HASL texture and thickness which is between 2 to 20um. HASL provide excellent
shelf life and offers ample solderability resistance but tend to leave high levels of
residues after fluxing.
HASL promotes flexibility and can be used in both horizontal and vertical equipment.
The fabrication process steps are listed below:
i.
ii.
iii.
iv.
Copper is pre-treated by cleaning then micro etched and fluxed
Panels are dipped into molten solder after pre-treatment
Blowing off excess solder using air knifes
Rinsing away excessive flux residues
HASL Advantages
i.
Cheap compared to other
finishes
ii.
Copper/Tin solder joint
iii. Easily available
iv.
Able to be reworked on
HASL Disadvantages
i.
Not flat
ii.
Paste misprints
iii. Below average fine-print
assembly
iv.
Thick intermetallics
v.
May contain Pb (Lead exposure)
vi.
May cost thermal damage to PCB
Table 2.3 Advantages and Disadvantages of HASL finishing
2.6.2 Organic Solderability Preservative (OSP)
OSP consist of mini organic coatings utilized for preserving solder compounds on
PCB copper thread. Most of its attributes limit to purely solderability as compared to
other finishing. OSP consists of chemicals used in anti-tarnish coating such as
Benzimidazoles and Phenylimidazoles which have lasting effect on multiple soldering
operations. The cheap price of OSP coating makes it widely popular in the industry.
However, OSP uses are limited due to poor contact properties and can also degrade
after multiple thermal application.
OSP copper complex readily deposits on the board surface up to thickness of 0.10 to
0.60um.
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Figure 2.19 OSP molecule types
Process
Cleaner
Microtech
Pre-dip
OSP
Chemicals
Aqueous solvents,
detergents and emulsifiers.
To remove undercut
residues using acidic
solutions
1-2um of copper is
oxidized to Cu++ and
dissolved
The usual method in which
predip uses ingredients of
the OSP bath without
using the chemical itself
OSP, acetic or formic acid,
source of copper and other
metallic materials
Table 2.4 OSP process flow
Time (min)
1.0-4.0
1.0
0.5
0.5-1.0
Table 2.5 illustrate the advantages and disadvantages of using OSP coating.
OSP Advantages
i.
Flat, fine-pitch assembly
ii.
Least expensive of all coatings
iii. Simple process
iv.
Easily available
v.
Copper/Tin solderjoint
vi.
No Lead
vii.
Easy to rework on
viii. High fabrication productivity
OSP Disadvantages
i.
Not direct to measure
thickness
ii.
Not easy to apply on contact
surface
iii. Poor PTH soldering
iv.
Short shelf-life
v.
Exposure of copper on final
assembly
vi.
Unable to be checked before
completion of assembly
vii.
Quality degrades over multiple
reflows
viii. Sensitive to handling
ix. Issues with paste misprint
cleaning
Table 2.5 Advantages and Disadvantages of OSP finishing
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2.7 FR4 Substrate
FR4 have been widely utilized in printed circuit manufacturing industry for many
years. They consists of mainly epoxy-based materials
For use on less complex applications, the choice would be to select materials with
thermal conditions of 130 to 140 degree Celsius Tg .
For multilayer applications, materials with higher thermal point of 170 to 180 degree
Celsius Tg should be used.
To add on, material such as woven fibreglass cloth and epoxy resins provide good
combination of performance, possibility and cost. With a wide range of cloth styles
available, it is easier to control circuit thickness and dielectric properties. The epoxy
based type materials also make it more manageable to cut or customize based on
requirements.
Based on the above advantages, FR4 continue to provide reliable performance, easy
processing and cost effectiveness in the printed circuit industry. [16]
Figure 2.20 Copper clad laminate FR-4
2.8 Network Analyzer
The RF network analyzer measure electrical and network parameters for various
components ranging from filters, mixers, transistors and other RF oriented devices.
We can also observe behaviours of the RF circuit by measuring the response.
Scalar network analyzer (SNA): This analyzer can be used only for amplitude
properties measurement. It basically works like a spectrum analyzer with a tracking
generator on the DUT.
Vector network analyzer (VNA): The VNA also called the gain-phase meter or
Automatic Network Analyzer, measuring the amplitude and phase properties of the
device tested. It is much powerful compared to SNA and has a wider set of functions
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which includes analyzing amplitude response, networking scattering parameters, sparameters, which are the transmission and reflection co-efficient.
Large Signal Network Analyzer (LSNA): LSNA is a powerful and highly specialised
analyzer used to provide details of harmonics, and non linearity of a network under
large signal conditions. Another naming for this device is Microwave Transition
Analyzer (MTA).
The network analyzer consists of the following sections:
RF network analyzer stimulus / source: The analyzer is an active test platform which
generates signal to the device under testing, and measure the response from it. The
stimulus or source in this case works like the signal generator. It has two modes to
sweep power and frequency.
Signal Separation: The signal separation element measures part of the incident signal
to provide reference point known as “rationing”. It can also separate the incident and
reflected travelling waves at the DUT input.
Receiver and signal detection: The receiver which can be in the form of a simple
diode detector works like demodulator to separate the source signal from the test
object.
Processor and display: The processor outputs the processed signal from the receiver
thru display in the form of plots and smith charts. [17][18]
Figure 2.21 Large Signal Network Analyzer (LSNA)
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CHAPTER 3: PROJECT SELECTIONS
3.1 Selection of Substrate Material
The low-temperature co-fired ceramic (LTCC) is a multilayer substrate produce from
combining several layers of material and mostly consist of several materials such as
alumina dust, glass compounds, organic binders, solvents, dispersing elements with
the main material as alumina.
For the C-Band filter operating at 5.3GHz, LTCC substrate with dielectric constant of
10, thickness of 635um was chosen.
For the Ka-Band filter operating at 28GHz, LTCC substrate with dielectric constant of
7.84, thickness of 100um was chosen.
For the improvised design, FR4 substrate with dielectric constant of 4.7, thickness of
1600um was chosen for fabrication to match budget allocated budget and available
school equipment.
3.2 Selection of Filter Methodology
The project requirement is to design an edge-coupled wide bandpass filter suitable for
MCM applications.
Edge-coupled filter generally consist of stripline arrays quarter wavelength long. One
end of the resonator is open-circuited while the other end is close-circuited in
alternating pattern. Such a design makes the filter compact since all striplines are
utilized as resonators.
Based on microstrip characteristics, increasing the substrate height reduces coupling
effects. In general, to design filters performing at 15% bandwidth can be relatively
achievable. However, for wider bandwidths (C and Ka-Band) requirement, it is
necessary to have coupling lines with very narrow gaps which posed an issue to
implement due to manufacturing limitations.
The LTCC MCM method rectifies this issue. Adopting this technique allows for line
width and gaps spacing to be as little as 15pm, definitely not attainable using
conventional thick-film approach.
3.3 Selection of Software
Modelling and Simulation tools are essential built-ups of a project design. The
engineer can perform pre-test analysis and evaluate if the design is workable before
proceeding to manufacture the actual product.
Three RF designing software were considered for this project.
i.
Agilent Advance Design System
ENG499 CAPSTONE PROJECT REPORT
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ii.
iii.
AWR Microwave Office
Ansoft HFSS
Table 3.1 shows a comparison of the features available for each of the above
mentioned software programs.
Properties
ADS
HFSS
MWO
User Friendliness
Hard
Average
Easy
Online help and
Available Available Available
support features
Support Simulation
Yes
Yes
Yes
Support SYes
Yes
Yes
Parameters
3D EM visual
Yes
Yes
Yes
capabilities
Resource
High
Average
Low
consumption
Price
Free trial
Free trial High
Table 3.1 Comparison of software features
Based on the above comparison, ADS offers the best options due to its user friendly
platform, comprehensive templates and tutorial guides. Free trial for ADS is also
available and system requirements are minimal which help to speed up simulation
time required. Thus, ADS have been chosen as the software for this project. [19][20]
3.4 Selection of PCB Finishing
There are various types of PCB finishing available in the market today. To help
determine the correct finish to apply, the list below gathers information on what each
type of finish offer in terms of reliability, solderability, and cost factor. [21]
Properties
Lead free
compatibility
based on RoHS
compliant
Solder joint
reliability
Shelf life
Assembly heat
cycles
Ability to
withstand
thermal shock
during
fabrication
Ease of solder
flow onto surface
Solder paste
IAg
Yes
ENIG
Yes
OSP
Yes
ISn
Yes
HASL
No
Very good
Good
Good
Good
Excellent
Good
Multiple
Good
Multiple
Good
Multiple
Good
Multiple
Good
Multiple
Excellent
Good
Good
Good
Poor
Very
Good
Excellent
Good
Good
Good
Excellent
Excellent
Excellent
Excellent
Poor
ENG499 CAPSTONE PROJECT REPORT
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printability for
fine pitch device
Low
Yes
Depend on Yes
Yes
contamination
Au %
possibility
Low contact
Good
Good
Poor
Good
resistance
Aluminium wire Good
Good
Poor
Poor
bonding
Price
Average
High
Average
Low
IAg – Immersion Silver
ENIG – Electroless Ni/Imm Au
OSP – Organic Solderability Preservative
ISn – Immersion Tin
HASL – Hot Air Solder Levelling
Table 3.2 Comparison of different PCB finishing
No
Poor
Poor
Low
3.5 Selection of Measuring Equipment
Once fabrication process is completed, prototype measurements can be taken. The
Agilent Network Analyzer Model E5062A is available in SIM University laboratory
and caters for generic S-Parameters measurements. [22]
The following shows specifications on the equipment.
i.
ii.
iii.
iv.
v.
vi.
vii.
300KHz to 3GHz
Integration of T/R
Testing set for S-Parameter
Testing port is available in 50 or 75 ohms
Dynamic range value of 120dB
Trace noise of 0.005dB
In-built Visual Basic capabilities
Figure 3.1 Agilent E5062A Network Analyzer
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3.6 Selection of SMA Connector
The Sub Miniature Version A (SMA) connector is a type of coaxial connector meant
for RF use. Typical uses for SMA connectors include cable box, modems and TV
signal connectors.
For this project, 50ohm SMA connectors that provide excellent electrical performance
from DC to 18GHz range are chosen. The SMA connectors are compact in sizing and
provide excellent durability. The SMA connectors also come in various mounting
types to help minimize mechanical adjustments.
Based on the proposed filter design, the 2-hole flanged SMA (Manufacture Part #1420701-621) connector was chosen as it best fitted the design without the need for
further modification which may damaged the fabricated PCB if mishandling occurs.
However, extra care should be taken when soldering the connector to make sure
ground points are well soldered to the flange holes and also to prevent contact with
the signal pin. The SMA connector can be purchased from Sim Lim Tower at about
$5 each. [23][24]
Figure 3.2 Two-holed flanged SMA connector jack
Figure 3.3 Different types of SMA connectors
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CHAPTER 4: FILTER DESIGN USING LTCC
The initial design is based on 7th order Chebyshev bandpass filter operating at a center
frequency of 5.3GHz and 28GHz respectively.
Seven resonators using edge-coupled methodology were implemented on LTCC
substrate.
The first and seventh resonators were place on the top LTCC layer; remaining
resonators were placed on the second LTCC layer so as to optimize capacitive value
as a trade off between the insertion losses and to narrow bandwidth properties. The
bottom layer is the ground plane. The input lines are set with 50 ohms impedance and
connected on top surface of the LTCC substrate.
(a)
(b)
Figure 4.1 LTCC bandpass filter (a) Schematic view, (b) 3-D view
4.1 Design of C-Band Filter using LTCC
This filter was designed to operate at center frequency of 5.3GHz. The first step will
be to setup substrate layers and simulation parameters in ADS.
ENG499 CAPSTONE PROJECT REPORT
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4.1.1 ADS Setup for C-Band Filter
For ADS setup, we need to define substrate layer properties and setup s-parameters.
The dielectric constant of LTCC substrate was defined as  r  10 with 635 m height.
The test frequency range will be from 4GHz to 7GHz. Sample points were set at 999.
(a)
(b)
(c)
Figure 4.2 (a) Substrate layer (b) Layout layers (c) S-Parameters settings for 5.3GHz
filter
4.1.2 Dimensions of C-Band Filter
The initial filter dimensions can be calculated using equations listed in Chapter 2.2.4
and also using ADS LineCalc function.
First, we calculate the dimension of input lines. They are configured to provide 50
impedance to match the SMA connectors.
Dielectric constant  r = 10
Substrate Thickness h = 635um
Conductor Thickness t = 17um
Characteristic impedance, Z 0 = 50 
Using LineCalc, we determine the length and width of the input lines.
ENG499 CAPSTONE PROJECT REPORT
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Figure 4.3 LineCalc for input lines (C-Band)
To demonstrate the accuracy of LineCalc, manual calculation was performed as listed
below.
 re 
 r 1  r 1 
2

h
1  12 
2 
W
10  1 10  1 
h

1  12 
2
2 
W
 6.906
0.5
0.5

 W
W

Zc 
 h  1.393  0.677 In  h  1.444  
 re 


1
120  587.018
 587.018


 635  1.393  0.677 In  635  1.444  
6.906 


 50
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41
Setting of single 50ohm port in ADS is shown below.
Figure 4.4 Setting of single mode 50ohms port (C-Band)
Specifications of the filter design with central frequency of 5.3GHz, low cut-off
frequency of 4.9GHz and high cut-off 5.3GHz.
Step 1:
Normalized Bandwidth,

2  1 5.7  4.9

 0.151
0
5.3
Step 2:
Next, the parameters for the 7 coupling structures are calculated using Equations (11),
(12), (13).
j
1
0.448
J j , j 1
2
0.183
3
0.137
4
0.13
5
0.137
6
0.183
7
0.448
Y0
Step 3:
Followed by the even and odd impedances,
j
( Z 0 e ) j , j 1 ()
1
82.44
2
60.82
3
57.79
4
57.35
5
57.79
6
60.82
7
82.44
( Z 0 o ) j , j 1 ()
37.64
42.52
44.09
44.35
44.09
42.52
37.64
ENG499 CAPSTONE PROJECT REPORT
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Step 4:
From the ( Z0e ), ( Z0o ) values, we can evaluate line length l, width W and line
gap/spacing S values using LineCalc.
j
W j , j 1 (  m)
S j , j 1 (  m)
1
2
3
4
5
6
7
344
526
547
550
547
526
344
177
524
699
734
699
524
177
l ' j ( m)
5736
5528
5499
5495
5499
5528
5736
Figure 4.5 LineCalc for coupling lines (C-Band)
For guided wavelength,
g 
0
( f )  re
3 x108
(5.3 x109 ) 6.906
 21539.33 m

Using equation (16), length of each coupling structure is roughly:
l' j 
gj
 2d
4
21539.33 m

 2(104.8 m)
4
 5175 m
ENG499 CAPSTONE PROJECT REPORT
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Considering d jj 1 remains constant throughout and offset value d = 0.165 x h where h
is the substrate material thickness 635 m .
4.1.3 Initial Design for C-Band Filter
The initial design and simulation results are obtained from above steps.
Center Frequency: 4.09GHz
Bandwidth: 899MHz
Insertion Loss (IL): -0.014dB
Return Loss (RL): -2.468dB
We are looking to achieve center frequency of around 5.3GHz, low and high cut-off
frequency at 4.9GHz and 5.7GHz respectively. S21 response is also not flat. The
overall results are not satisfactory.
Seven coupled line with different lengths (  m )
L1,L7=5736
L2,L6=5528
L3,L5=5499
L4=5495
W1,W7=344
Seven coupled line with different widths (  m )
W2,W6=526
W3,W5=547
W4=550
S1,S7=177
Seven coupled line with different spacing (  m )
S2,S6=524
S3,S5=699
S4=734
50686x8004x1270
Overall Dimension (  m )
Table 4.1 Initial dimensions for C-Band filter
m2
freq=4.221GHz
dB(S(2,1))=-3.659
m1
freq=3.774GHz
dB(S(1,1))=-3.186
m1 m5
m2 m3
0
m3
freq= 4.673GHz
dB(S(1,1))=-3.442
dB(S(2,1))
dB(S(1,1))
-20
m4
-40
-60
-80
2
3
4
5
6
7
freq, GHz
m4
freq= 4.086GHz
dB(S(1,1))=-46.128
m5
freq=4.221GHz
dB(S(1,1))=-2.468
(a)
(b)
Figure 4.6 Initial results and layout for C-Band filter
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4.2 Design of Ka-Band Filter using LTCC
This filter was designed to operate at center frequency of 28GHz. The first step will
be to setup substrate layers and simulation parameters in ADS. An alternative LTCC
substrate with different dielectric constant and thickness was used in this design due
to errors encountered during simulation.
4.2.1 ADS Setup for Ka-Band Filter
For ADS setup, we need to define substrate layer properties and setup s-parameters.
The dielectric constant of LTCC substrate was defined as  r  7.84 with
100 m height, and loss tangent (tan  ) of 0.001. The test frequency range will be
from 20GHz to 36GHz. Sample points were set at 999.
(a)
(b)
(c)
Figure 4.7 (a) Substrate layer (b) Layout layers (c) S-Parameters settings for 28GHz
filter
ENG499 CAPSTONE PROJECT REPORT
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4.2.2 Dimensions of Ka-Band Filter
The initial filter dimensions can be calculated from equations listed in Chapter 2.2.4
and also using ADS LineCalc function.
First, we calculate the dimension of input lines. They are configured to provide 50
impedance to match the SMA connectors.
Dielectric constant  r = 7.84
Substrate Thickness h = 100um
Conductor Thickness t = 17um
Characteristic impedance, Z 0 = 50 
Loss Tangent Tan  = 0.001
Using LineCalc, we determine the length and width of the input lines.
Figure 4.8 LineCalc for input lines (Ka-Band)
To demonstrate the accuracy of LineCalc, manual calculation of the values was done
as listed below.
 re 
 r 1  r 1 
2

h
1  12 
2 
W
0.5
7.84  1 7.84  1 
100 

1  12

2
2 
106.49 
 5.394
0.5

 W
W

Zc 
 h  1.393  0.677 In  h  1.444  
 re 


1
120  106.49
 106.49

 100  1.393  0.677 In  100  1.444  
5.394 


 50
1

Setting of single 50ohm port in ADS is shown below as well.
ENG499 CAPSTONE PROJECT REPORT
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Figure 4.9 Setting of single mode 50ohms port (Ka-Band)
Specifications of the filter design with central frequency of 28GHz, low cut-off
frequency of 25GHz and high cut-off 31GHz.
Step 1:
Normalized Bandwidth,

2  1 31  25

 0.214
0
28
Step 2:
Next, the parameters for the 7 coupling structures are calculated using Equations (11),
(12), (13).
j
1
0.534
J j , j 1
2
0.259
3
0.195
4
0.185
5
0.195
6
0.259
7
0.534
Y0
Step 3:
Followed by the even and odd impedances,
j
( Z 0 e ) j , j 1 ()
1
90.9
2
66.3
3
61.6
4
60.9
5
61.6
6
66.3
7
90.9
( Z 0 o ) j , j 1 ()
37.6
40.4
42.2
42.5
42.2
40.4
37.6
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Step 4:
From the ( Z0e ), ( Z0o ) values, we can evaluate line length l, width W and line gap S
values using LineCalc.
j
W j , j 1 (  m)
S j , j 1 (  m)
1
2
3
4
5
6
7
46
82
89
90
89
82
46
34
68
92
97
92
68
34
l ' j ( m)
1285
1213
1196
1194
1196
1213
1285
Figure 4.10 LineCalc for coupling lines (Ka-Band)
For guided wavelength,
g 
0
( f )  re
3 x108
(28 x109 ) 5.394
 4612.4  m

Using equation (16), length of each coupling structure is roughly:
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l' j 
gj
 2d
4
4612.4  m

 2(16.5 m)
4
 1123.1 m
Considering d jj 1 remains constant throughout and offset value d = 0.165 x h where h
is the substrate material thickness 100 m .
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4.2.3 Initial Design for Ka-Band Filter
The initial design simulation results using values obtained from above steps.
Center Frequency: 22GHz
Bandwidth: 536MHz
Insertion Loss (IL): -5.031dB
Return Loss (RL): -1.831dB
We are looking to achieve center frequency of 28GHz, low and high cut-off frequency
at 25GHz and 31GHz respectively. S21 response is also not flat. The result was
unsatisfactory.
Seven coupled line with different lengths (  m )
L1,L7=1285
L2,L6=1213
L3,L5=1196
L4=1194
W1,W7=46
Seven coupled line with different widths (  m )
W2,W6=82
W3,W5=89
W4=90
Seven coupled line with different spacing (  m ) S1,S7=34
S2,S6=68
S3,S5=92
S4=97
11067x1219x200
Overall Dimension (  m )
Table 4.2 Initial dimensions for Ka-Band filter
m1
freq= 19.39GHz
dB(S(1,1))=-3.141
m3
freq= 22.01GHz
dB(S(2,1))=-5.031
m1 m3 m2
0
m4
-20
dB(S(2,1))
dB(S(1,1))
m2
freq= 24.75GHz
dB(S(1,1))=-2.955
-40
-60
-80
10
15
20
25
30
35
40
freq, GHz
m4
freq= 21.20GHz
dB(S(1,1))=-28.512
(a)
(b)
Figure 4.11 Initial results and layout for Ka-Band filter
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4.3 Sensitivity Analysis (LTCC)
To fine-tune the filters, adjustments will be made to physical dimensions such as
length, width and line gaps to observe how these changes can influence resonator
performance. Each parameter was tested from a range of values based on the initial
design and modified further in steps to achieve the desired filter response.
4.3.1 Effects of Adjusting Resonator Length (LTCC)
Based on equation (5), the resonator length is an important attribute affecting the
resonant frequency since they are inversely proportional.
To achieve a higher center frequency from the initial design, several different length
values have been tested in the design.
Based on the results shown in Figure 4.4 below, it can be concluded that decreasing
resonator length will register an increase in center frequency.
Length vs Frequency (5.3GHz)
Length (um)
8000
6000
4000
2000
0
1
2
3
4
5
Length
5736
5175
4975
4675
4375
Frequency
4.08
4.38
4.81
5.1
5.42
Frequency (GHz)
Length vs Frequency (28GHz)
Length (um)
1500
1000
500
0
1
2
3
4
5
Length (um)
1285
1123
1023
943
923
Frequency (GHz)
22.01
23.7
25.94
28.05
28.56
Frequency (GHz)
Chart 4.1 Plot of Length against Frequency
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4.3.2 Effects of Adjusting Resonator Width (LTCC)
Based on the equation stated below, resonator width affects resistivity and conductive
losses. [25]
c 
Rs
Z0 W
(17)
Where Rs denotes the conductor surface resistivity, and Z 0 represents the
characteristic impedance of the microstrip.
The following chart summarizes the effects of adjusting various width values in steps
how the change affects the results.
Except for slight improvement observed when reducing resonator width, there is not
much significant change in S11 and S21 performance.
S-Parameters (-dB)
Width vs S-Parameters (5.3GHz)
10
8
6
4
2
0
Width (um)
1
2
3
4
5
6
7
8
9
10
11
44
94
144
194
244
344
444
544
644
744
844
S11 (dB)
1.72
2
2.12
2.18
2.59
2.32
1.97
1.84
1.54
1.37
1.22
S21 (dB)
4.91
4.35
4.17
4.06
3.5
3.86
4.4
4.64
5.29
5.73
6.17
Width (um)
S-Parameters (-dB)
Width vs S-Parameters (28GHz)
10
8
6
4
2
0
1
2
3
4
5
6
7
8
9
16
26
36
46
56
66
76
86
96
S11 (dB)
1.64
1.79
1.8
1.72
1.68
1.57
1.46
1.36
1.25
S21 (dB)
5.42
5.1
5.09
5.26
5.33
5.6
5.89
6.16
6.49
Width (um)
Width (um)
Chart 4.2 Plot of Width against S-Parameters
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4.3.3 Effects of Adjusting Resonator Line Gaps (LTCC)
Line gaps or spacing between coupling structures affects the performance parameters
by a great margin. By varying the spacing, the coupling effect will change thus
affecting resulting bandwidth and insertion loss. It can be observed that increasing the
coupling space significantly improves insertion and return loss for this design. The
impact of altering spacing is recorded in chart 4.3 shown below.
Space vs S-Parameters (5.3GHz)
S-Parameters (-dB)
25
20
15
10
5
0
1
2
3
4
Spacing (um)
404
S11 (dB)
1.82
S21 (dB)
4.69
5
6
7
8
9
424
504
524
624
724
824
1024
1124
2.6
3.15
4
5.97
7.86
10.38
14.07
20.98
3.48
2.89
2.21
1.28
0.79
0.43
0.19
0.05
Space (um)
Space vs S-Parameters (28GHz)
S-Parameters (-dB)
50
40
30
20
10
0
1
2
3
4
5
6
7
8
17
34
83
133
153
183
203
233
S11 (dB)
1.44
1.83
4.63
6.45
12.7
30.14
28.45
26.06
S21 (dB)
5.82
5.03
2.13
1.48
0.61
0.45
0.48
0.45
Spacing (um)
Space (um)
Chart 4.3 Plot of Spacing against S-Parameters
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4.4 Final Design
Numerous experimental simulations were done by varying the physical dimensions as
discussed in the previous sections. The results gathered allow understanding of the
factors affecting performance parameters and further optimization to obtain the final
design.
4.4.1 Final Design for C-Band Filter
Center Frequency: 5.25GHz
Bandwidth: 500MHz
Insertion Loss (IL): -0.161dB
Return Loss (RL): -14.99dB
The center frequency achieved was around 5.25GHz, low and high cut-off frequency
at 5GHz and 5.5GHz respectively. Insertion loss was -0.161dB and Return loss was 14.99dB at 5.25GHz.
Seven coupled line with different lengths (  m )
L1,L7=4395
L2,L6=4375
L3,L5=4375
L4=4375
W1,W7=494
Seven coupled line with different widths (  m )
W2,W6=526
W3,W5=547
W4=550
S1,S7=17
Seven coupled line with different spacing (  m )
S2,S6=1224
S3,S5=1399
S4=1434
42330x11134x1270
Overall Dimension (  m )
Table 4.3 Final dimensions of C-Band filter
S21
S11
0
0
-20
Mag. [dB]
Mag. [dB]
-10
-20
-30
-40
-60
-40
-80
-50
4.0
4.5
5.0
5.5
Frequency
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6.0
6.5
7.0
4.0
4.5
5.0
5.5
6.0
6.5
7.0
Frequency
54
m1
freq=5.000GHz
dB(S(1,1))=-4.317
m3
freq=5.251GHz
dB(S(2,1))=-0.161
m1
0
m3
m2
freq=5.500GHz
dB(S(1,1))=-4.725
m2
m4
dB(S(2,1))
dB(S(1,1))
-20
-40
-60
-80
4.0
4.5
5.0
5.5
6.0
6.5
7.0
freq, GHz
m4
freq=5.251GHz
dB(S(1,1))=-14.993
(a)
(b)
Figure 4.12 Final results and layout for C-Band filter
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4.4.2 Final Design for Ka-Band Filter
Center Frequency: 28.01GHz
Bandwidth: 288MHz
Insertion Loss (IL): -0.46dB
Return Loss (RL): -25.56dB
The center frequency achieved was 28.01GHz, low and high cut-off frequency at
26.57GHz and 29.45GHz respectively. Insertion loss was -0.46dB and Return Loss
was -25.56 at 28.01GHz.
Seven coupled line with different lengths (  m )
L1,L7=934
L2,L6=943
L3,L5=943
L4=943
W1,W7=46
Seven coupled line with different widths (  m )
W2,W6=82
W3,W5=89
W4=90
S1,S7=10
Seven coupled line with different spacing (  m )
S2,S6=183
S3,S5=207
S4=212
42330x11134x1270
Overall Dimension (  m )
Table 4.4 Final dimensions of Ka-Band filter
S21
0
-10
-10
Mag. [dB]
Mag. [dB]
S11
0
-20
-30
-40
-20
-30
-40
-50
-50
-60
20
22
24
26
28
30
Frequency
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34
36
20
22
24
26
28
30
32
34
36
Frequency
56
m1
freq= 26.57GHz
dB(S(1,1))=-3.167
m3
freq= 28.01GHz
dB(S(2,1))=-0.455
m2
freq= 29.45GHz
dB(S(1,1))=-3.073
m1 m3 m2
0
dB(S(2,1))
dB(S(1,1))
-10
m4
-20
-30
-40
-50
-60
20
22
24
26
28
30
32
34
36
freq, GHz
m4
freq= 28.01GHz
dB(S(1,1))=-25.561
(a)
(b)
Figure 4.13 Final results and layout for Ka-Band Filter
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CHAPTER 5: FILTER DESIGN USING FR4
5.1 Design of Filter using FR4
This modified design was configured to operate at center frequency of 1.5GHz. Same
approach as LTCC filter, first step will be to setup substrate layers and simulation
parameters in ADS.
5.2 ADS Setup for FR4 Filter
The dielectric constant of FR4 substrate was defined as  r  4.7 and 1600 m height
with loss tangent (tan  ) of 0.027. The test frequency range will be from 1GHz to
2GHz. Sample points were set at 999.
(a)
(b)
(c)
Figure 5.1 (a) Substrate layer (b) Layout layers (c) S-Parameters settings for FR4
filter
5.3 Dimensions of FR4 Filter
The initial filter dimensions can be calculated using equations listed in Chapter 2.2.4
and also using ADS LineCalc function.
First, we calculate the dimension of input and output lines. They are configured to
provide 50 impedance to match the SMA connectors.
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Dielectric constant  r = 4.7
Substrate Thickness h = 1600um
Conductor Thickness t = 17um
Characteristic impedance, Z 0 = 50 
Loss Tangent Tan  = 0.027
Using LineCalc, we determine the length and width of the input lines.
Figure 5.2 LineCalc for input lines (FR4)
To demonstrate the accuracy of LineCalc, manual calculation of the values was done
as listed below.
 re 
 r 1  r 1 
2

h
1  12 
2 
W
0.5
4.7  1 4.7  1 
1600 


1  12

2
2 
2887 
 3.519
0.5
 W
W

Zc 
 h  1.393  0.677 In  h  1.444  
 re 


1
120  2887
 2887


 1600  1.393  0.677 In  1600  1.444  
3.519 


 50
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59
Setting of single 50ohm port in ADS is shown below.
Figure 5.3 Setting of single mode 50ohms port (FR4)
Specifications of the filter design with central frequency of 1.5GHz, low cut-off
frequency of 1.2GHz and high cut-off 1.8GHz.
Step 1:
Normalized Bandwidth,

2  1 1.8  1.2

 0.4
0
1.5
Step 2:
Next, the parameters for the 7 coupling structures are calculated using Equations (11),
(12), (13).
j
1
0.729
J j , j 1
2
0.485
3
0.364
4
0.346
5
0.364
6
0.485
7
0.729
Y0
Step 3:
Followed by the even and odd impedances,
j
( Z 0 e ) j , j 1 ()
1
2
113.05 85.98
3
74.80
4
73.27
5
74.80
6
7
85.98 113.05
( Z 0 o ) j , j 1 ()
40.12
38.42
38.68
38.42
37.51
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40.12
60
Step 4:
From the ( Z0e ), ( Z0o ) values, we can evaluate line length l, width W and line
gap/spacing S values using LineCalc.
j
W j , j 1 (  m)
S j , j 1 (  m)
1
2
3
4
5
6
7
2113
2777
2821
2827
2821
2777
2113
362
1729
2296
2405
2296
1729
362
l ' j ( m)
27469
26774
26707
26699
26707
26774
27469
Figure 5.4 LineCalc for coupling lines (FR4)
For guided wavelength,
g 
0
( f )  re
3 x108
(1.5 x109 ) 3.519
 106615.5 m

Using equation (16), length of each coupling structure is roughly:
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l' j 
gj
 2d
4
106615.5 m

 2(264  m)
4
 26126  m
Considering d jj 1 remains constant throughout and offset value d = 0.165 x h where h
is the substrate material thickness 1600  m .
5.4 Sensitivity Analysis (FR4)
A with previous LTCC design, adjustments will be made to physical dimensions to
observe how these changes can influence resonator performance. The observations are
stated next.
5.4.1 Effects of Adjusting Resonator Length (FR4)
As discussed previously, reducing resonator length register an increase in center
frequency.
Length vs Frequency (FR4)
Length (um)
30000
25000
20000
15000
10000
5000
0
1
2
3
4
5
Length (um)
27469
27369
26969
26469
22969
Frequency (GHz)
1.291
1.295
1.315
1.338
1.538
Frequency (GHz)
Chart 5.1 Plot of Length against Frequency
5.4.2 Effects of Adjusting Resonator Width
It may be noted that reducing resonator width improves insertion and return losses but
not by great margin.
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S-Parameters (-dB)
Width vs S-Parameters (FR4)
15
10
5
0
Width (um)
1
2
3
4
5
6
7
8
9
10
513
913
1513
1713
1913
2113
2313
2513
2713
2913
S11 (dB)
7.66
S21 (dB)
9.242 9.281 9.897 10.38 10.62 10.37 11.28 11.69 12.09 12.47
7.757 7.221 8.465 6.487 7.045 5.871 5.514 5.252 5.036
Width (um)
Chart 5.2 Plot of Width against S-Parameters
5.4.3 Effects of Adjusting Resonator Space (FR4)
Adjusting line gap values affect the performance greatly.
Space vs S-Parameters (FR4)
S-Parameters (-dB)
25
20
15
10
5
0
Spacing (um)
1
2
12
62
3
4
100 162
5
6
362
562
7
8
9
10
11
12
762 962 1162 1362 1562 1762
S11 (dB)
9.06 8.99 8.97 8.78 8.47 8.03 7.66 7.29 6.96 6.98 6.22 8.02
S21 (dB)
8.92 9.11 9.25 9.52 10.4 11.3 12.3 13.4 14.6 15.9 17.2 20.8
Space (um)
Chart 5.3 Plot of Spacing against S-Parameters
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5.5 Final Design for FR4 Filter
In this section, simulation results will be provided based on values obtained from
above calculations.
Center Frequency: 1.291GHz
Bandwidth: 220MHz
Insertion Loss (IL): -10.37dB
Return Loss (RL): -7.05dB
We are looking to achieve center frequency of 1.5GHz, low and high cut-off
frequency at 1.8GHz and 1.2GHz respectively. The S21 response was flat. Based on
the overall results, this design was satisfactory and was recommended for fabrication.
Seven coupled line with different lengths (  m )
L1,L7=27469
L2,L6=26774
L3,L5=26707
L4=26699
W1,W7=2113
Seven coupled line with different widths (  m )
W2,W6=2777
W3,W5=2821
W4=2827
S1,S7=362
Seven coupled line with different spacing (  m )
S2,S6=1729
S3,S5=2296
S4=2405
243615x33803x3200
Overall Dimension (  m )
Table 5.1 Final dimensions for FR4 filter
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S11
S21
0
-10
Mag. [dB]
Mag. [dB]
-20
-5
-10
-30
-40
-50
-15
-60
1.0
1.2
1.4
1.6
1.8
2.0
1.0
1.2
1.4
Frequency
1.6
1.8
2.0
Frequency
m1
freq=1.181GHz
dB(S(1,1))=-2.985
m3
freq=1.291GHz
dB(S(1,1))=-7.045
m1
0
m3
m4
m2
freq=1.401GHz
dB(S(1,1))=-3.003
m2
dB(S(2,1))
dB(S(1,1))
-10
-20
-30
-40
-50
-60
1.0
1.2
1.4
1.6
1.8
2.0
freq, GHz
m4
freq=1.291GHz
dB(S(2,1))=-10.374
(a)
(b)
Figure 5.5 Final results and layout for FR4 Filter
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CHAPTER 6: FABRICATION AND ASSEMBLY OF
FILTER PROTOTYPE
6.1 Gerber files Exportation
This chapter explains the preparation procedures before sending the prototype for
fabrication.
Once the filter design is completed, the next step will be exporting the design into
gerber files before sending for fabrication. Gerber format refers to a CAD
representation of a PCB and is widely accepted by PCB manufacturers as the standard
format.
The following are steps for gerber file preparation:
i.
ii.
iii.
iv.
v.
vi.
vii.
viii.
Remove input ports from the design.
Separate the design parts individually according to substrate layers, via holes,
ground plane.
Create a rectangular border sized roughly 3x3cm extending from the end point
of the design for all individual layers. This border will act as markings for
cutting the layers. Take note to customize the border to allow spacing for
SMA connectors.
Extend the input stripline to the border
Export the individual layers to gerber format.
PCB manufactures can charge based on material sheet size. Therefore, it is
more cost effective to utilize the whole sheet area by combining individual
layers to fit as much as possible into one sheet.
Create a word document describing clearly all layer orientation from topmost
to bottom layer. Also indicate sides to etch off, via hole locations and ground
plane.
To verify if the fabricated product is of the correct size, perform a printout
from the gerber file. This printed copy will be the exact size and dimension as
the fabricated product.
Steps to export gerber file from ADS software:
i.
ii.
iii.
iv.
v.
vi.
vii.
Go to “File”, “Export”.
Under “File Type”, select “Gerber” from the drop down list.
Check that the correct file format is selected, for this case is “RX274X”
Click on “More Options”, select the correct output unit “mm” for this case
Click “OK” once done to export the design.
A popup message will appear indicating “Exportation Complete”.
Check for any warnings or errors in the log.
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Figure 6.1 Screen shot of gerber exportation from ADS
Figure 6.2 Screen shot of gerber viewer
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6.2 Assembly of Filter Prototype
The fabrication process will take about one week. Upon completion, the filter layers
can be collected from the vendor and assembled in a technical workshop. Two sets of
filter were fabricated using HASL and OSP finishing respectively.
Figure 6.3 describes the fabrication process perform by our vendor “Precision Circuit
Manufacturers Pte Ltd”.
Figure 6.3 Fabrication process for multi-layer PCBs
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(a)
(b)
(c)
(d)
Figure 6.4 Filter layers (a) Filter layer orientation (b) Gerber view (c) OSP finishing
(d) HASL finishing
Basic technical tools such as soldering iron, hand drills, screw driver, cutter will be
required and are easily available at local hardware shops. Extra components such as
SMA connectors, nuts, screws, and masking tape will also need to be purchased.
The following steps describe the assembly procedure.
i.
ii.
iii.
iv.
v.
Markings for drilling holes were drawn on the layers.
Masking tape was used to secure the layers together for drilling.
Drill the required screw and via holes.
Tighten the layers together using screws and nuts.
Solder the SMA connectors onto the board.
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Figure 6.5 Picture of assembled filter prototype
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CHAPTER 7: COMPARISON OF MEASURED AND
SIMULATION RESULTS
7.1 Measurement of Results
As discussed in proposed approach earlier in chapter 1, it is necessary to demonstrate
workability of the proposed filter prototype. Here, we make comparisons between the
simulated and measured results to determine if the prototype is working to
expectations.
Measurements can be taken using network analyzer available in SIM University or
other electronics laboratory. The test apparatus and setup are listed as below.
i.
ii.
iii.
Agilent E8362B Network Analyzer
Two sets of BNC adaptors
Two sets of BNC to SMA connectors
(b)
(a)
Figure 7.1 (a) Agilent E8362B Network Analyzer (b) Two sets of BNC adaptors with
BNC to SMA connectors
Testing was done on the filter set using OSP finishing. The HASL set was kept as
backup. The network analyzer was configured to perform adaptive sweep from range
of 10MHz to 5GHz and the measurements are compared against simulation results.
Simulation Results
Measured Results
Center frequency at 1.291GHz
Center frequency at 1.312GHz
Insertion Loss of -10.37dB
Insertion Loss of -7.75dB
Return Loss of -7.05dB
Return Loss of -7.26dB
Table 7.1 Comparison between simulation and measured results
Comparing the results, it can be observed that center frequency shifted around
0.021GHz, insertion and return loss also fare better for actual measurements. The
extra losses could be due to tiny air gaps present when combining the layers plus
other factors like material quality and component metallization loss. Changes in
overall dielectric constant caused by shrinkage after co-firing could also possibly
affect the quality.
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To summarize, the performance of the hardware prototype is comparable to
simulation and can be considered a success based on the results achieved.
S11
S21
0
-10
Mag. [dB]
Mag. [dB]
-20
-5
-10
-30
-40
-50
-15
-60
1.0
1.2
1.4
1.6
1.8
2.0
1.0
1.2
Frequency
1.4
1.6
1.8
2.0
Frequency
m1
freq=1.181GHz
dB(S(1,1))=-2.985
m3
freq=1.291GHz
dB(S(1,1))=-7.045
m1
0
m3
m4
m2
freq=1.401GHz
dB(S(1,1))=-3.003
m2
dB(S(2,1))
dB(S(1,1))
-10
-20
-30
-40
-50
-60
1.0
1.2
1.4
1.6
1.8
2.0
freq, GHz
m4
freq=1.291GHz
dB(S(2,1))=-10.374
(a)
(b)
Figure 7.2 (a) Simulation results (b) Measured results
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CHAPTER 8: CONCLUSION
To conclude, this paper puts forward details on design modelling, simulation and
fabrication of wide-band multilayer edge-coupled BPF using LTCC technology.
This project has been an incredible experience for me. It proved to be a daunting task
to handle a project of such magnitude from scratch. By completing this project, I have
managed to gain valuable knowledge in both hardware and software aspects of
building a filter prototype.
Based on initial objectives, the hardware prototype performed to expectations with
low insertion and return loss. The results proved that the design was feasible and
suitable for both C and Ka-Band MCM applications.
However, due to time constraints and various issues encountered along the way. The
simulation results for LTCC are only reasonably satisfactory at this point. Given more
time, better results can definitely be achieved.
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CHAPTER 9: SUGGESTION FOR FURTHER WORKS
To improve the filter overall performance, some of the following suggestions might
be implemented.
More testing should be done to further improve insertion and return loss. Such as
extending the experiment scope to test out different substrate materials and make
changes to the current design by adding taps or stubs and observe if better results can
be achieved.
The parallel coupling structures may also be titled or folded in suitable angles such as
similar to the structure of hairpin filter topology to reduce overall dimensions.
By implementing metallic enclosure will help to reduce housing loss and stabilize
characteristic impedance and effective dielectric constant due to conducting top and
side walls.
To improve the Q factor, better resonator plating such as silver may also be
considered.
The filter layers can also be aligned more professionally using proper laminating
techniques. However, these methods will add on to the budget cost considerably.
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REFERENCES
[1]
LTCC Technology, retrieved 7th August 2010 from, http://www.ltcc-consulting.com
[2]
What is LTCC?, Retrieved 8th August 2010 from, http://www.ltcc.de/en/whatis.php
[3]
LTCC Technology for Sensor-and RF-Applications, Retrieved 10th August 2010
from, http://www.koaeurope.de/at/koa/downloads/LTCC12-2007.pdf
[4]
LTCC Examples and Solutions, Retrieved 8th August 2010 from,
http://www.ltcc.de/en/examples.php
[5]
Jia-Sheng Hong, MJ Lan Caster, ‘Microstrip Lines’, ‘Microstrip Filters for RFMicrowave Applications’, New York: John Wiley & Son Inc, 2001, pp. 77-84
[6]
Jia-Sheng Hong, MJ Lan Caster, ‘Coupled Lines’, ‘Microstrip Filters for RFMicrowave Applications’, New York: John Wiley & Son Inc, 2001, pp. 84-89
[7]
M. Dhieb, M.Ketata, M. Lhiani, H. Ghariani, ‘Microstrip Bandpass Filters for Ultra
Wide Band (UWB) [3.1-5.1 GHz]’, Retrieved 16th August 2010 from,
http://www.hypersciences.org/IJISTE/Iss.2-2010/IJISTE-2-2-2010.pdf
[8]
RF filter basic tutorial, Retrieved 16th August 2010 from, http://www.radioelectronics.com/info/rf-technology-design/rf-filters/rf-filter-basics-tutorial.php
[9]
R Lidwig, P Bretchko, ‘An Overview of RF Filter Design’, ‘RF Circuit Design –
Theory and Applications’, Prentice-Hall, Inc., 2000, pp. 201-241
[10] RF and Microwave Filter, Retrieved 16th August 2010 from,
http://en.wikipedia.org/wiki/RF_and_microwave_filter
[11] Chebyshev Filter, Retrieved 20th August 2010 from,
http://en.wikipedia.org/wiki/Chebyshev_filter
[12] Jia-Sheng Hong, MJ Lan Caster, ‘Bandpass Filters’, ‘Microstrip Filters for RFMicrowave Applications’, New York: John Wiley & Son Inc, 2001, pp. 121-158
[13] Jia-Sheng Hong, MJ Lan Caster, ‘Network Analysis’, ‘Microstrip Filters for RFMicrowave Applications’, New York: John Wiley & Son Inc, 2001, pp. 7-10
[14] Advanced Design System (ADS), Retrieved 20th August 2010 from,
http://www.home.agilent.com/agilent/product.jspx?cc=SG&lc=eng&ckey=1297113&nid
=-34346.0.00&id=1297113
[15] Clyde F. Coombs, Jr., ‘Printed Circuit Board Surface Finishes’, ‘Printed Circuits
Handbook, Sixth Edition’, New York: McGraw Hill Handbooks, 2008, pp. 751-760
[16] Clyde F. Coombs, Jr., ‘Types of FR4’, ‘Printed Circuits Handbook, Sixth Edition’,
New York: McGraw Hill Handbooks, 2008, pp. 127-128
[17] Network analyzer (electrical), retrieved 20th August 2010 from,
http://en.wikipedia.org/wiki/Network_analyzer_%28electrical%29
ENG499 CAPSTONE PROJECT REPORT
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[18] RF network analyzer basics tutorial, retrieved 21st August 2010 from,
http://www.radio-electronics.com/info/t_and_m/rf-network-analyzer/analyser-basicstutorial.php
[19] Key Features of Microwave Office, retrieved 21st April 2011 from,
http://web.awrcorp.com/Usa/Products/Microwave-Office/Key-Features/
[20] Key Features of Ansoft HFSS, retrieved 21st April 2011 from,
http://www.ansoft.com/products/hf/hfss/new.cfm
[21] PCB Material Comparison, retrieved 22nd April 2011 from,
http://www.sunstone.com/pcb-capabilities/lead-free-rohs/material-comparison.aspx
[22] Key Specifications of E5062A ENA-L RF Network Analyzer, retrieved 2nd
May 2011 from, http://www.home.agilent.com/agilent/product.jspx?nid=536902639.536883619.00&lc=eng&cc=SG
[23] SMA connector series, retrieved 23rd April 2011 from,
http://www.amphenolrf.com/products/sma.asp?N=0&sid=4DB4B9804E66E17F&
[24] SMA Connectors, retrieved 2nd May 2011 from,
http://www.wenteqmicrowave.com/pdf/SMA-Connectors.pdf
[25] K. A. Butt, A.E. Nadeem, A. Hasan, ‘Sensitivity Analysis’, ‘A Low Cost RF
Oscillator Incorporating a Folded Parallel Coupled Resonator’, Retrieved 2th May
2011 from, http://www.jpier.org/PIERC/pierc09/07.09062505.pdf
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APPENDIX A
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APPENDIX B
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APPENDIX C
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APPENDIX D
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APPENDIX E
3D-EM view and Schematic Diagrams:
(a)
(b)
(c)
(d)
3D-EM view (a) Front view (b) Top view (c) Back view (d) Side view
C-Band design schematic
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Ka-Band design schematic
FR4 design schematic
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APPENDIX F
Other LTCC Designs (C-Band)
Design 1:
j
W j , j 1 (  m)
S j , j 1 (  m)
1
2
3
4
5
6
7
344
526
547
550
547
526
344
177
524
699
734
699
524
177
l ' j ( m)
4975
4975
4975
4975
4975
4975
4975
m4
freq=4.670GHz
dB(S(2,1))=-3.627
m1
freq=4.164GHz
dB(S(1,1))=-3.018
m2
freq=5.157GHz
dB(S(1,1))=-3.336
m1 m3
m4 m2
0
dB(S(2,1))
dB(S(1,1))
-20
-40
-60
Center Frequency:4.66GHz
Bandwidth:0.993GHz
Insertion Loss:-3.627dB
Return Loss:-2.487dB
-80
2
3
4
5
6
7
freq, GHz
m3
freq=4.670GHz
dB(S(1,1))=-2.487
Design 2:
j
W j , j 1 (  m)
S j , j 1 (  m)
1
2
3
4
5
6
7
444
626
647
650
647
626
444
177
524
699
734
699
524
177
l ' j ( m)
4375
4375
4375
4375
4375
4375
4375
m1
freq= 4.699GHz
dB(S(1,1))=-2.949
0
m3
freq=5.253GHz
dB(S(1,1))=-1.973
m3
m4
m1
m2
m2
freq= 5.796GHz
dB(S(1,1))=-2.706
dB(S(2,1))
dB(S(1,1))
-20
Center Frequency:5.25GHz
Bandwidth:1.097GHz
Insertion Loss:-4.401dB
Return Loss:-1.973dB
ENG499 CAPSTONE PROJECT REPORT
-40
-60
-80
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
freq, GHz
m4
freq= 5.253GHz
dB(S(2,1))=-4.401
88
Design 3:
j
W j , j 1 (  m)
S j , j 1 (  m)
1
2
3
4
5
6
7
194
376
397
400
397
376
194
177
524
699
734
699
524
177
l ' j ( m)
4375
4375
4375
4375
4375
4375
4375
m3
freq= 5.257GHz
dB(S(2,1))=-1.822
m1
freq=4.705GHz
dB(S(1,1))=-3.491
m3
m4
m1
0
m2
freq=5.796GHz
dB(S(1,1))=-3.125
m2
dB(S(2,1))
dB(S(1,1))
-20
-40
-60
Center Frequency:5.26GHz
Bandwidth:1.091GHz
Insertion Loss:-1.822dB
Return Loss:-4.672dB
-80
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
freq, GHz
m4
freq= 5.257GHz
dB(S(1,1))=-4.672
Design 4:
j
W j , j 1 (  m)
S j , j 1 (  m)
1
2
3
4
5
6
7
344
526
547
550
547
526
344
157
524
699
734
699
524
157
l ' j ( m)
4375
4375
4375
4375
4375
4375
4375
m3
freq=5.258GHz
dB(S(2,1))=-3.817
m1
freq=4.693GHz
dB(S(1,1))=-2.972
m4
m3
m1
0
m2
freq=5.815GHz
dB(S(1,1))=-2.654
m2
dB(S(2,1))
dB(S(1,1))
-20
Center Frequency:5.26GHz
Bandwidth:1.122GHz
Insertion Loss:-3.817dB
Return Loss:-2.347dB
ENG499 CAPSTONE PROJECT REPORT
-40
-60
-80
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
freq, GHz
m4
freq=5.258GHz
dB(S(1,1))=-2.347
89
Design 5:
j
W j , j 1 (  m)
S j , j 1 (  m)
1
2
3
4
5
6
7
344
526
547
550
547
526
344
17
1024
1199
1234
1199
1024
17
l ' j ( m)
4375
4375
4375
4375
4375
4375
4375
m3
freq=5.248GHz
dB(S(2,1))=-0.178
m1
freq=4.938GHz
dB(S(1,1))=-2.881
m2
freq=5.559GHz
dB(S(1,1))=-3.137
m1 m3 m2
m4
0
dB(S(2,1))
dB(S(1,1))
-20
Center Frequency:5.25GHz
Bandwidth:0.621GHz
Insertion Loss:-0.178dB
Return Loss:-14.284dB
ENG499 CAPSTONE PROJECT REPORT
-40
-60
-80
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
freq, GHz
m4
freq=5.248GHz
dB(S(1,1))=-14.284
90
APPENDIX G
Other LTCC Designs (Ka-Band)
Design 1:
j
W j , j 1 (  m)
S j , j 1 (  m)
1
2
3
4
5
6
7
46
82
89
90
89
82
46
34
68
92
97
92
68
34
l ' j ( m)
1285
1213
1196
1194
1196
1213
1285
m3
m2
freq=28.56GHz
freq=32.07GHz
dB(S(2,1))=-5.253
dB(S(1,1))=-3.116
m1 m4
m3 m2
m1
freq=25.09GHz
dB(S(1,1))=-3.089
0
dB(S(2,1))
dB(S(1,1))
-20
-40
-60
Center Frequency:25.56GHz
Bandwidth:6.98GHz
Insertion Loss:-5.253dB
Return Loss:-1.721dB
-80
10
15
20
25
30
35
40
freq, GHz
m4
freq=28.56GHz
dB(S(1,1))=-1.721
Design 2:
j
W j , j 1 (  m)
S j , j 1 (  m)
1
2
3
4
5
6
7
56
92
99
100
99
92
56
34
68
92
97
92
68
34
l ' j ( m)
943
943
943
943
943
943
943
m1
freq= 24.64GHz
dB(S(1,1))=-3.166
m3
freq= 28.00GHz
dB(S(2,1))=-5.330
m1
0
m4
m3
m2
freq= 31.37GHz
dB(S(1,1))=-2.616
m2
dB(S(2,1))
dB(S(1,1))
-20
Center Frequency:28GHz
Bandwidth:6.73GHz
Insertion Loss:-5.33dB
Return Loss:-1.684dB
ENG499 CAPSTONE PROJECT REPORT
-40
-60
-80
10
15
20
25
30
35
40
freq, GHz
m4
freq= 28.00GHz
dB(S(1,1))=-1.684
91
Design 3:
j
W j , j 1 (  m)
S j , j 1 (  m)
1
2
3
4
5
6
7
26
62
69
70
69
62
26
34
68
92
97
92
68
34
l ' j ( m)
943
943
943
943
943
943
943
m1
freq= 24.53GHz
dB(S(1,1))=-3.288
m3
freq= 28.00GHz
dB(S(2,1))=-5.097
m1
0
m4
m3
m2
freq=31.56GHz
dB(S(1,1))=-2.783
m2
dB(S(2,1))
dB(S(1,1))
-20
-40
-60
Center Frequency:28GHz
Bandwidth:7.03GHz
Insertion Loss:-5.097dB
Return Loss:-1.794dB
-80
10
15
20
25
30
35
40
freq, GHz
m4
freq= 28.00GHz
dB(S(1,1))=-1.794
Design 4:
j
W j , j 1 (  m)
S j , j 1 (  m)
1
2
3
4
5
6
7
46
82
89
90
89
82
46
20
83
107
112
107
83
20
l ' j ( m)
943
943
943
943
943
943
943
m3
freq=28.02GHz
dB(S(2,1))=-3.489
m1
freq=24.98GHz
dB(S(1,1))=-3.004
m1
m4
m3
0
m2
freq=31.02GHz
dB(S(1,1))=-2.840
m2
dB(S(2,1))
dB(S(1,1))
-10
Center Frequency:28.02GHz
Bandwidth:6.04GHz
Insertion Loss:-3.489dB
Return Loss:-2.872dB
ENG499 CAPSTONE PROJECT REPORT
-20
-30
-40
-50
-60
20
22
24
26
28
30
32
34
36
freq, GHz
m4
freq=28.02GHz
dB(S(1,1))=-2.872
92
Design 5:
j
W j , j 1 (  m)
S j , j 1 (  m)
1
2
3
4
5
6
7
46
82
89
90
89
82
46
10
183
207
212
207
183
10
l ' j ( m)
929
943
943
943
943
943
929
m3
freq= 28.00GHz
dB(S(2,1))=-0.447
m1
freq= 26.57GHz
dB(S(1,1))=-2.982
m2
freq=29.46GHz
dB(S(1,1))=-3.018
m1 m3 m2
0
dB(S(2,1))
dB(S(1,1))
-10
Center Frequency:28GHz
Bandwidth:2.89GHz
Insertion Loss:-0.447dB
Return Loss:-30.184dB
ENG499 CAPSTONE PROJECT REPORT
-20
m4
-30
-40
-50
-60
20
22
24
26
28
30
32
34
36
freq, GHz
m4
freq= 28.00GHz
dB(S(1,1))=-30.184
93
APPENDIX H
Other FR4 Designs
Design 1:
j
W j , j 1 (  m)
S j , j 1 (  m)
1
2
3
4
5
6
7
2113
2777
2821
2827
2821
2777
2113
362
1729
2296
2405
2296
1729
362
l ' j ( m)
26469
25774
25707
25699
25707
25774
26469
m3
freq=1.338GHz
dB(S(1,1))=-6.830
m1
freq=1.226GHz
dB(S(1,1))=-3.164
m1
0
m2
freq=1.451GHz
dB(S(1,1))=-3.151
m2
m3
m4
dB(S(2,1))
dB(S(1,1))
-10
Center Frequency:1.338GHz
Bandwidth:0.225GHz
Insertion Loss:-10.452dB
Return Loss:-6.83dB
-20
-30
-40
-50
-60
1.0
1.2
1.4
1.6
1.8
2.0
freq, GHz
m4
freq=1.338GHz
dB(S(2,1))=-10.452
Design 2:
j
W j , j 1 (  m)
S j , j 1 (  m)
1
2
3
4
5
6
7
2513
3177
3221
3227
3221
3177
2513
362
1729
2296
2405
2296
1729
362
l ' j ( m)
22969
22274
22207
22199
22207
22274
22969
m3
freq=1.536GHz
dB(S(1,1))=-5.514
m1
freq=1.414GHz
dB(S(1,1))=-3.038
m1
0
m2
freq=1.658GHz
dB(S(1,1))=-3.006
m2
m3
m4
dB(S(2,1))
dB(S(1,1))
-10
Center Frequency:1.536GHz
Bandwidth:0.244GHz
Insertion Loss:-11.692dB
Return Loss:-5.514dB
ENG499 CAPSTONE PROJECT REPORT
-20
-30
-40
-50
-60
1.0
1.2
1.4
1.6
1.8
2.0
freq, GHz
m4
freq=1.536GHz
dB(S(2,1))=-11.692
94
Design 3:
j
W j , j 1 (  m)
S j , j 1 (  m)
1
2
3
4
5
6
7
1713
2377
2421
2427
2421
2377
1713
362
1729
2296
2405
2296
1729
362
l ' j ( m)
22969
22274
22207
22199
22207
22274
22969
m1
freq=1.403GHz
dB(S(1,1))=-2.910
m3
freq=1.532GHz
dB(S(1,1))=-8.465
m1
0
m2
freq=1.660GHz
dB(S(1,1))=-3.044
m2
m3
m4
dB(S(2,1))
dB(S(1,1))
-10
Center Frequency:1.532GHz
Bandwidth:0.257GHz
Insertion Loss:-10.375dB
Return Loss:-8.465dB
-20
-30
-40
-50
-60
1.0
1.2
1.4
1.6
1.8
2.0
freq, GHz
m4
freq=1.532GHz
dB(S(2,1))=-10.375
Design 4:
j
W j , j 1 (  m)
S j , j 1 (  m)
1
2
3
4
5
6
7
1713
2377
2421
2427
2421
2377
1713
562
1929
2496
2605
2496
1929
562
l ' j ( m)
22969
22274
22207
22199
22207
22274
22969
m1
freq= 1.414GHz
dB(S(1,1))=-3.086
m3
freq= 1.531GHz
dB(S(1,1))=-8.026
m1
0
m2
freq= 1.648GHz
dB(S(1,1))=-3.069
m2
m3
m4
dB(S(2,1))
dB(S(1,1))
-10
Center Frequency:1.531GHz
Bandwidth:0.234GHz
Insertion Loss:-11.322dB
Return Loss:-8.026dB
ENG499 CAPSTONE PROJECT REPORT
-20
-30
-40
-50
-60
1.0
1.2
1.4
1.6
1.8
2.0
freq, GHz
m4
freq= 1.531GHz
dB(S(2,1))=-11.322
95
Design 5:
j
W j , j 1 (  m)
S j , j 1 (  m)
1
2
3
4
5
6
7
1713
2377
2421
2427
2421
2377
1713
162
3529
4096
4205
4096
3529
162
l ' j ( m)
21969
21274
21207
21199
21207
21274
21969
m1
freq=1.503GHz
dB(S(1,1))=-3.055
m3
freq= 1.598GHz
dB(S(1,1))=-13.226
m1
0
dB(S(2,1))
dB(S(1,1))
ENG499 CAPSTONE PROJECT REPORT
m2
m3
m4
-10
Center Frequency:1.598GHz
Bandwidth:0.19GHz
Insertion Loss:-16.964dB
Return Loss:-13.226dB
m2
freq= 1.693GHz
dB(S(1,1))=-3.033
-20
-30
-40
-50
-60
1.0
1.2
1.4
1.6
1.8
2.0
freq, GHz
m4
freq= 1.598GHz
dB(S(2,1))=-16.964
96
APPENDIX I
Meeting Log 1
1
2
3
4
5
6
Date
Time
Duration
Venue
Student Name
Project / Supervisor Name
7
Review of Previous
Meeting and progress
Minutes of current meeting
8
9
Action items/ Targets to
achieve
ENG499 CAPSTONE PROJECT REPORT
August 01, 2010
9:30am – 11:30am
2 hours
UniSIM Room 4.25
Soong Wei Qiang
Embedded Edge-Coupled BPF using
Multilayer LTCC Technology for Ka-Band
Multi-Chip-Module (MCM) Applications / Dr
Lum Kum Meng
Nil
1. Discussion on project scope.
2. Breakdown of project Expectations,
Objectives and Schedule.
3. Supervisor conducted brief intro on the
usage of ADS (Advanced Design
System) software for circuit design and
simulation.
4. Highlights on the 1st design for project.
5. Introduction on available equipment in
campus. (Network Analyzer 300KHz –
300GHz) , (Spectrum Analyzer 9KHz –
3GHz), (Signal Generator 9KHz –
3GHz)
6. To work on design within the above
range (around 1GHz).
1. To sent in meeting log by end of day.
2. To enhance personal understanding on
LTCC filter design via reference books
by next meeting.
3. To submit Proposal by 28 Aug 10.
4. To research on BPF design using
LTCC Technology and completion of
1st design and simulation phase by
Nov10.
5. To submit Interim Report by 8 Nov.
6. To enhance on 1st design and
fabrication (optional) by Feb11 (Before
CNY).
7. To start on thesis after Feb11 (after
97
10 Other comment/Areas to
improve
11 Reference materials
12 How did you progress so
far?
(10 Excellent, 1 Poor)
ENG499 CAPSTONE PROJECT REPORT
CNY), completion by May11.
1. Next meeting will be held on 07 Aug 46pm at Room 3.17
Nil
Completed 1st meeting log.
98
Meeting Log 2
1
2
3
4
5
6
7
8
9
Date
Time
Duration
Venue
Student Name
Project / Supervisor Name
August 07, 2010
4:00pm – 6:00pm
2 hours
Blk82 Room 2.02
Soong Wei Qiang
Embedded Edge-Coupled BPF using Multilayer
LTCC Technology for Ka-Band Multi-ChipModule (MCM) Applications / Dr Lum Kum
Meng
Review of Previous Meeting More read up to enhance personal
and progress
understanding on filters using LTCC
technology.
Minutes of current meeting
1. ADS demonstration on schematic and
momentum platform.
2. Understand modeling approach of
LTCC filter using ADS.
3. Guidelines to project proposal write-up.
Action items/ Targets to
achieve
10 Other comment/Areas to
improve
11 Reference materials
1. To sent in meeting log by end of day.
2. To enhance personal understanding on
LTCC filter design via
websites/reference books.
3. Research on S-Parameters.
4. Commence on proposal write-up.
5. Commence or LTCC filter modeling.
1. Next meeting will be held on 21 August
2010 3:00pm – 5:00pm.Venue to be
announced upon confirmation.
1. R. Ludwig, P. Bretchko RF Circuit Design Theory and Applications, 2000 by PrenticeHall, Inc. pp 200, 241
2. Jia-Sheng Hong, M.J. Lan Caster,
“Combline Filter,” Microstrip Filters for
RF/Microwave Applications, New York:
John Wiley & Sons Inc, 2001 pp 127-130
3. LTCC technology, Retrieved 07 August
2010, http://www.ltcc-consulting.com/
12 How did you progress so
far?
(10 Excellent, 1 Poor)
ENG499 CAPSTONE PROJECT REPORT
Completed 2nd meeting log.
99
Meeting Log 3
1
2
3
4
5
6
Date
Time
Duration
Venue
Student Name
Project / Supervisor Name
7
Review of Previous
Meeting and progress
Minutes of current meeting
8
9
Action items/ Targets to
achieve
10 Other comment/Areas to
improve
11 Reference materials
August 21, 2010
3:00pm – 5:00pm
2 hours
Blk82 Room 2.02
Soong Wei Qiang
Embedded Edge-Coupled BPF using Multilayer
LTCC Technology for Ka-Band Multi-ChipModule (MCM) Applications / Dr Lum Kum
Meng
1. To read up on Chebyshev Filters.
1. Technical discussion on filter design and
implementation.
2. Further discussion on usage of ADS
momentum platform for filter design
3. Further discussion on proposal write-up
techniques.
1. To sent in meeting log by end of day.
2. To complete project proposal by 6 Sep
2010.
3. Presentation of 1st filter design prototype
and simulation results.
1. Next meeting will be held on 4 Sep 2010
3:00pm – 5:00pm.Venue to be
announced upon confirmation.
1. R. Ludwig, P. Bretchko RF Circuit Design Theory and Applications, 2000 by PrenticeHall, Inc. pp 200, 241
2. Jia-Sheng Hong, M.J. Lan Caster,
“Combline Filter,” Microstrip Filters for
RF/Microwave Applications, New York:
John Wiley & Sons Inc, 2001 pp 127-130
3. LTCC technology, Retrieved 07 August
2010, http://www.ltcc-consulting.com/
4. What is LTCC? , Retrieved 08 August 2010,
http://www.ltcc.de/en/whatis.php
12 How did you progress so
far?
(10 Excellent, 1 Poor)
ENG499 CAPSTONE PROJECT REPORT
Completed 3rd meeting log.
Commence on proposal write-up.
Commence on LTCC filter modeling.
100
Meeting Log 4
1
2
3
4
5
6
Date
Time
Duration
Venue
Student Name
Project / Supervisor Name
7
Review of Previous
Meeting and progress
8
Minutes of current meeting
1. Technical discussion on edge-coupled
filter design.
2. Further troubleshooting of problems on
ADS modeling.
3. Further discussion on proposal write-up
techniques.
9
Action items/ Targets to
achieve
1. To sent in meeting log by end of day.
2. To complete project proposal by 5 Sep
2010 1200HRS
1. Next meeting will be held on 18 Sep
2010 3:00pm – 5:00pm.Venue to be
announced upon confirmation.
1. R. Ludwig, P. Bretchko RF Circuit Design -
10 Other comment/Areas to
improve
11 Reference materials
September 04, 2010
3:00pm – 5:00pm
2 hours
Blk82 Room 2.02
Soong Wei Qiang
Embedded Edge-Coupled BPF using Multilayer
LTCC Technology for Ka-Band Multi-ChipModule (MCM) Applications / Dr Lum Kum
Meng
1. Continue working on filter design and
proposal writeup.
Theory and Applications, 2000 by PrenticeHall, Inc. pp 200, 241
2. Jia-Sheng Hong, M.J. Lan Caster,
“Combline Filter,” Microstrip Filters for
RF/Microwave Applications, New York:
John Wiley & Sons Inc, 2001 pp 127-130
3. LTCC technology, Retrieved 07 August
2010, http://www.ltcc-consulting.com/
What is LTCC? , Retrieved 08 August 2010,
http://www.ltcc.de/en/whatis.php
12 How did you progress so
far?
(10 Excellent, 1 Poor)
ENG499 CAPSTONE PROJECT REPORT
Completed 4rd meeting log.
Commence on proposal write-up.
Commence on LTCC filter modeling.
101
Meeting Log 5
1
2
3
4
5
6
7
8
Date
Time
Duration
Venue
Student Name
Project /
Supervisor
Name
Review of
Previous
Meeting and
progress
Minutes of
current
meeting
9
Action items/
Targets to
achieve
1
0
Other
comment/Area
s to improve
Reference
materials
1
1
September 18, 2010
3:00pm – 5:00pm
2 hours
HQ Room 4.23
Soong Wei Qiang
Embedded Edge-Coupled BPF using Multilayer LTCC
Technology for Ka-Band Multi-Chip-Module (MCM)
Applications / Dr Lum Kum Meng
1. Continue working on filter design and enhance
performance of filter
1. Technical discussion and troubleshooting on edgecoupled filter design.
2. Analysis on current filter performance
1. To sent in meeting log by end of day.
2. Presentation on improvised filter performance
3. To demonstrate more understanding on multilayer
filter design
1. Next meeting will be held on 16 Oct 2010 3:00pm –
5:00pm.Venue to be announced upon confirmation.
1. R. Ludwig, P. Bretchko RF Circuit Design - Theory and
Applications, 2000 by Prentice-Hall, Inc. pp 200, 241
2. Jia-Sheng Hong, M.J. Lan Caster, “Combline Filter,”
Microstrip Filters for RF/Microwave Applications, New
York: John Wiley & Sons Inc, 2001 pp 127-130
3. LTCC technology, Retrieved 07 August 2010,
http://www.ltcc-consulting.com/
4. Functions and Type of Network Analyzer, Retrieved 21
August 2010,
http://en.wikipedia.org/wiki/Network_analyzer_%28electri
cal%29
1
2
How did you
progress so
far?
(10 Excellent,
1 Poor)
ENG499 CAPSTONE PROJECT REPORT
Completed 5th meeting log.
Completed proposal write-up.
Commence on LTCC filter modeling.
102
Meeting Log 6
1
2
3
4
5
6
7
Date
Time
Duration
Venue
Student Name
Project / Supervisor Name
October 16, 2010
12:30pm – 3:00pm
2.5 hours
Blk82 Lab 3.11
Soong Wei Qiang
Embedded Edge-Coupled BPF using Multilayer
LTCC Technology for Ka-Band Multi-ChipModule (MCM) Applications / Dr Lum Kum
Meng
Review of Previous Meeting
1. Continue working on filter design and
and progress
enhance performance of filter
8
Minutes of current meeting
1. Technical discussion and
troubleshooting on edge-coupled filter
design.
2. Analysis on current filter performance
9
Action items/ Targets to
achieve
1. To sent in meeting log by end of day.
2. Presentation on improvised filter
performance
3. To demonstrate more understanding on
multilayer filter design.
4. Interim Report to be submitted on 8 Nov
2010 by 1200 HRS.
1. Next meeting will be held on Jan
2011.Date, Time and Venue to be
announced upon confirmation.
1. R. Ludwig, P. Bretchko RF Circuit Design -
10 Other comment/Areas to
improve
11 Reference materials
Theory and Applications, 2000 by PrenticeHall, Inc. pp 200, 241
2. Jia-Sheng Hong, M.J. Lan Caster,
“Combline Filter,” Microstrip Filters for
RF/Microwave Applications, New York:
John Wiley & Sons Inc, 2001 pp 127-130
3. LTCC technology, Retrieved 07 August
2010, http://www.ltcc-consulting.com/
12 How did you progress so
far?
(10 Excellent, 1 Poor)
ENG499 CAPSTONE PROJECT REPORT
Completed 6th meeting log.
Completed proposal write-up.
Commence on LTCC filter modeling.
To complete Interim Report by 8 Nov 2010
103
Meeting Log 7
1
2
3
4
5
6
7
Date
Time
Duration
Venue
Student Name
Project / Supervisor Name
December 08, 2010
08:00pm – 9:30pm
1.5 hours
Tampines
Soong Wei Qiang
Embedded Edge-Coupled BPF using Multilayer
LTCC Technology for Ka-Band Multi-ChipModule (MCM) Applications / Dr Lum Kum
Meng
Review of Previous Meeting
1. Discussion of problems faced on Edgeand progress
Coupled bandpass filter design
2. Troubleshooting of ADS design layout
8
Minutes of current meeting
1. Technical discussion and
troubleshooting on edge-coupled filter
design.
2. Analysis on current filter performance
9
Action items/ Targets to
achieve
1. To sent in meeting log by end of day.
2. Presentation on improvised filter
performance
3. To demonstrate more understanding on
multilayer filter design.
4. Interim Report to be submitted on 8 Nov
2010 by 1200 HRS.
1. Next meeting will be held on Jan
2011.Date, Time and Venue to be
announced upon confirmation.
1. R. Ludwig, P. Bretchko RF Circuit Design -
10 Other comment/Areas to
improve
11 Reference materials
Theory and Applications, 2000 by PrenticeHall, Inc. pp 200, 241
2. Jia-Sheng Hong, M.J. Lan Caster,
“Combline Filter,” Microstrip Filters for
RF/Microwave Applications, New York:
John Wiley & Sons Inc, 2001 pp 127-130
3. LTCC technology, Retrieved 07 August
2010, http://www.ltcc-consulting.com/
4. M. Dhieb, M. Ketata, M. Lahiani, H.
Ghariani, Microstrip Bandpass Filters for
Ultra Wide Band (UWB) [3.1-5.1 GHz],
12 How did you progress so
far?
(10 Excellent, 1 Poor)
ENG499 CAPSTONE PROJECT REPORT
Completed 7th meeting log.
Completed Interim Report.
104
Meeting Log 8
1
2
3
4
5
6
Date
Time
Duration
Venue
Student Name
Project / Supervisor
Name
7
Review of Previous
Meeting and
progress
Minutes of current
meeting
8
9
Action items/
Targets to achieve
10
Other
comment/Areas to
improve
Reference materials
11
February 12, 2011
10:00am – 12:00pm
2 hours
HQ Lab 5.17B
Soong Wei Qiang
Embedded Edge-Coupled BPF using Multilayer LTCC
Technology for Ka-Band Multi-Chip-Module (MCM)
Applications / Dr Lum Kum Meng
1. Continue working on filter design and enhance
performance of filter.
1. Technical discussion on filter performance.
2. Demonstration on fabrication process. Gerber
file creation.
1.
2.
3.
1.
To sent in meeting log by end of day.
Final improvement of filter response.
Completion of fabrication process
Next meeting will be held on 26 Feb 2011
10:00am – 12:00pm.Venue to be announced
upon confirmation.
1. R. Ludwig, P. Bretchko RF Circuit Design - Theory
and Applications, 2000 by Prentice-Hall, Inc. pp
200, 241
2. Jia-Sheng Hong, M.J. Lan Caster, “Combline
Filter,” Microstrip Filters for RF/Microwave
Applications, New York: John Wiley & Sons Inc,
2001 pp 127-130
3. LTCC technology, Retrieved 07 August 2010,
http://www.ltcc-consulting.com/
4. M. Dhieb, M. Ketata, M. Lahiani, H. Ghariani,
Microstrip Bandpass Filters for Ultra Wide Band
(UWB) [3.1-5.1 GHz], Retrieved 16 August 2010,
http://www.hypersciences.org/IJISTE/Iss.22010/IJISTE-2-2-2010.pdf
12
How did you
progress so far?
(10 Excellent, 1
Poor)
ENG499 CAPSTONE PROJECT REPORT
5. http://edocs.soco.agilent.com/display/ads2008U
2/Gerber+Translator
1. Completed 8th meeting log.
2. Working on final improvement of filter
response.
3. Prepare gerber file for fabrication.
105
Meeting Log 9
1
2
3
4
5
6
Date
Time
Duration
Venue
Student Name
Project /
Supervisor Name
7
Review of
Previous Meeting
and progress
Minutes of
current meeting
8
9
Action items/
Targets to achieve
10
Other
comment/Areas
to improve
Reference
materials
11
12
How did you
progress so far?
(10 Excellent, 1
Poor)
ENG499 CAPSTONE PROJECT REPORT
February 26, 2011
10:00am – 12:00pm
2 hours
HQ Lab 5.17B
Soong Wei Qiang
Embedded Edge-Coupled BPF using Multilayer LTCC
Technology for Ka-Band Multi-Chip-Module (MCM)
Applications / Dr Lum Kum Meng
1. Final improvement of filter performance.
1. Final verification of gerber files for fabrication.
2. Final verification of filter performance.
1. To sent in meeting log by end of day.
2. Presentation on understanding of filter design
concepts.
3. Update on fabrication performance.
1. Next meeting will be held on 12 Mar 2011
10:00am – 12:00pm.Venue to be announced upon
confirmation.
1. R. Ludwig, P. Bretchko RF Circuit Design - Theory
and Applications, 2000 by Prentice-Hall, Inc. pp 200,
241
2. Jia-Sheng Hong, M.J. Lan Caster, “Combline Filter,”
Microstrip Filters for RF/Microwave Applications,
New York: John Wiley & Sons Inc, 2001 pp 127-130
3. LTCC technology, Retrieved 07 August 2010,
http://www.ltcc-consulting.com/
4. M. Dhieb, M. Ketata, M. Lahiani, H. Ghariani,
Microstrip Bandpass Filters for Ultra Wide Band
(UWB) [3.1-5.1 GHz], Retrieved 16 August 2010,
http://www.hypersciences.org/IJISTE/Iss.22010/IJISTE-2-2-2010.pdf
5. http://edocs.soco.agilent.com/display/ads2008U2/
Gerber+Translator
6. http://www.sunstone.com/pcb-capabilities/leadfree-rohs/material-comparison.aspx
Completed 9th meeting log.
Completed gerber file for fabrication.
Contacting vendor for fabrication.
106
Meeting Log 10
1
2
3
4
5
6
Date
Time
Duration
Venue
Student Name
Project / Supervisor
Name
7
Review of Previous
Meeting and
progress
Minutes of current
meeting
8
9
Action items/
Targets to achieve
10
Other
comment/Areas to
improve
Reference materials
11
March 12, 2011
10:00am – 12:00pm
2 hours
HQ Lab 5.17B
Soong Wei Qiang
Embedded Edge-Coupled BPF using Multilayer LTCC
Technology for Ka-Band Multi-Chip-Module (MCM)
Applications / Dr Lum Kum Meng
1. Final improvement of filter performance.
1. Final verification of gerber files for fabrication.
2. Final verification of filter performance.
3. Update on fabrication progress.
1. To sent in meeting log by end of day.
2. Presentation on understanding of filter design
concepts.
3. Testing and measurement of actual filter
prototype.
1. Next meeting will be held on 26 Mar 2011
10:00am – 12:00pm.Venue to be announced
upon confirmation.
1. R. Ludwig, P. Bretchko RF Circuit Design - Theory
and Applications, 2000 by Prentice-Hall, Inc. pp
200, 241
2. Jia-Sheng Hong, M.J. Lan Caster, “Combline
Filter,” Microstrip Filters for RF/Microwave
Applications, New York: John Wiley & Sons Inc,
2001 pp 127-130
3. LTCC technology, Retrieved 07 August 2010,
http://www.ltcc-consulting.com/
12
How did you
progress so far?
(10 Excellent, 1
Poor)
ENG499 CAPSTONE PROJECT REPORT
4. http://edocs.soco.agilent.com/display/ads2008U
2/Gerber+Translator
5. http://www.sunstone.com/pcb-capabilities/leadfree-rohs/material-comparison.aspx
Completed 10th meeting log.
Completed gerber file for fabrication.
Contacting vendor for fabrication.
107