Mikell P. Groover 2013

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© Mikell P. Groover 2013
Chapter 30 PROCESSING OF INTEGRATED CIRCUITS
Multiple Choice Quiz
There are 29 correct answers in this multiple choice quiz (some questions have multiple answers
that are correct). To achieve a perfect score on the quiz, all correct answers must be given. Each
correct answer is worth 1 point. Each omitted answer or wrong answer reduces the score by 1
point. Percentage score on the quiz is based on the total number of correct answers.
30.1
Silicon is the most widely used semiconductor material for integrated circuits. Which of the
following are less common semiconductor materials used for ICs (two best answers): (a)
boron, (b) boron nitride, (c) gallium arsenide, (d) germanium, (e) silicon carbide, (f) silicon
dioxide, and (g) zirconium?
30.2
How many electronic devices would be contained in an IC chip in order for it to be
classified in the VLSI category (one best answer): (a) 1000, (b) 10,000, (c) 1 million, or (d)
100 million?
30.3
An alternative name for chip in semiconductor processing is which one of the following
(one best answer): (a) component, (b) device, (c) die, (d) package, or (e) wafer?
30.4
Which one of the following is the source of silicon for semiconductor processing: (a) pure
Si found in nature, (b) SiC, (c) Si3N4, or (d) SiO2?
30.5
Silicon that has been grown from a melt into a large single-crystal ingot by the Czochralski
process is called which one of the following: (a) boule, (b) crystallite, (c) crystalloid, (d)
transistor, or (e) wafer?
30.6
The air in a clean room is passed through a HEPA filter. HEPA stands for which one of the
following: (a) high-efficiency packaging amplifier, (b) high-efficiency passive arresting, (c)
high-efficiency particulate air, (d) high-energy processing action, or (e) high-energy
particle attenuation?
30.7
Which one of the following is the most common form of radiation used in
photolithography: (a) electronic beam radiation, (b) incandescent light, (c) infrared light,
(d) ultraviolet light, or (e) X-ray?
30.8
After exposure to light, a positive resist becomes (a) less soluble or (b) more soluble to the
chemical developing fluid.
30.9
A silicon dioxide film formed on the surface of a silicon wafer by thermal oxidation has a
thickness that is (a) greater than, (b) less than, or (c) the same as the layer of substrate
silicon used to form it.
30.10 Which one of the following is not one of the functions of silicon dioxide in semiconductor
processing: (a) provides electrical insulation between levels in multilevel metallization
systems, (b) serves as a conducting path between levels in multilevel metallization systems,
(c) serves as a mask to prevent diffusion of dopants into silicon, or (d) serves to isolate
devices in a circuit?
30.11 Epitaxial deposition refers to a process of growing a film onto a substrate so that the film
has a crystalline structure that is an extension of the substrate’s structure: (a) true of (b)
false?
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students enrolled in courses for which the textbook has been adopted. Any other reproduction or translation of this work beyond that permitted
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© Mikell P. Groover 2013
30.12 Vapor phase epitaxy is based on which one of the following: (a) chemical vapor deposition,
(b) diffusion, (c) ion implantation, (d) physical vapor deposition, or (e) thermal oxidation?
30.13 Which of the following processes are used to add layers of various materials in IC
fabrication (three best answers): (a) chemical vapor deposition, (b) diffusion, (c) ion
implantation, (d) physical vapor deposition, (e) plasma etching, (f) thermal oxidation, and
(g) wet etching?
30.14 Which of the following are doping processes in IC fabrication (two best answers): (a)
chemical vapor deposition, (b) diffusion, (c) ion implantation, (d) physical vapor
deposition, (e) plasma etching, (f) thermal oxidation, and (g) wet etching?
30.15 Which one of the following is the most common metal for metallization in a silicon
integrated circuit: (a) aluminum, (b) copper, (c) gold, (d) nickel, (e) silicon, or (f) silver?
30.16 Which etching process produces the more anisotropic etch in IC fabrication: (a) plasma
etching or (b) wet chemical etching?
30.17 Which of the following are the two principal packaging materials used in IC packaging: (a)
aluminum, (b) aluminum oxide, (c) copper, (d) epoxies, and (e) silicon dioxide?
30.18 According to Rent’s rule the number of input/output terminals in an integrated circuit is (a)
greater than or (b) less than the number of devices (logic gates) in the IC?
30.19 Which one of the following technologies in IC packaging provides the greater packing
densities in circuit board assembly: (a) pin-in-hole technology, (b) surface-mount
technology, or (c) through-hole technology?
30.20 Which one of the following IC packaging styles provides the opportunity for the largest
number of terminals in the package: (a) ball grid array, (b) dual in-line package, (c) pin grid
array, or (d) square package?
30.21 Multiprobe testing is a computer-controlled testing method that is performed on the
integrated circuits immediately after they have been separated from the wafer: (a) true or
(b) false?
30.22 Which of the following metals are commonly used for wire bonding of chip pads to the
lead frame (two best answers): (a) aluminum, (b) copper, (c) gold, (d) nickel, (e) silicon,
and (f) silver?
30.23 Which one of the following major phases in IC processing is the most important in
determining the overall yield of ICs: (a) chip separation from the wafer, (b) crystal growing
of the starting ingot, (c) packaging of the individual ICs, (d) slicing the ingot into wafers, or
(e) wafer processing of the individual ICs on the wafer?
Excerpts from this work may be reproduced by instructors for distribution on a not-for-profit basis for testing or instructional purposes only to
students enrolled in courses for which the textbook has been adopted. Any other reproduction or translation of this work beyond that permitted
by Sections 107 or 108 of the 1976 United States Copyright Act without the permission of the copyright owner is unlawful.
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