SEMICON/Japan
Industry Briefing
December 5, 2012
Executive Summary
• The Program has achieved critical momentum
• Tools selected for program demonstrations
– Broad coverage of tool set and Supplier base
– Tool optimization added to program scope
• Coordinating across Industry on
precompetitive opportunities
Global 450mm Consortium
• A public/private program based at the College of
Nanoscale Science and Engineering in Albany, NY
• Driving effective industry 450mm development
– Coordinate test wafer capability supporting development
– Demonstrate unit process tool performance
– Improve tools with Suppliers to ready for customer operations
• G450C Members
–
–
–
–
–
–
CNSE / Research Foundation
GLOBALFOUNDRIES
Intel
IBM
Samsung
TSMC
G450C Program Organization
GM/VP and Coordinator
Paul Farrar, CNSE
VP/GM, Industry / Strategy
VP/ GM, Internal / Operations
Frank Robertson, Intel
John Lin, TSMC
Director,
Integration
(Samsung)
•
•
•
•
Director, Program
Lithography
Coordination
Engineering Director
(GLOBALFOUNDRIES)
(Intel)
Etch Engineering
Director
(Samsung)
CMP/Thermal/Cleans CVD/PVD/Implant
Engineering Director Engineering Director
(TSMC)
(IBM)
Co-directors,
Fab Operations
(CNSE/TSMC)
Industry consortium coordinated by not-for-profit entity
Leveraging New York State funding, matched by all industry participants
Broadly-shared management of Program execution
>60 staff on board now; >150 by 2014, with ~60 Supplier engineers on site
4
Development and Technology
Intercept Targets
G450C Program
Early 450mm Development
Early Development of Silicon and factory
integration / automation standards,
interoperability test beds for component and
standards verification; early tool development
ISMI 32/22nm Equipment
Performance Metrics
Test Wafers to support development and demo
Tools for Consortium Demonstrations
(unit process)
14nm G450C Demonstrations
450mm and 300mm tools progress
synchronously through technology generations
10nm and
beyond
Ready for IC Makers
Nominal “nm” = ITRS M1 Half Pitch
Full set of process and
metrology, automation
------
2010
2011
2012
2013
2014
2015
2016
5
Test Wafer Support for Tool Development
2011
2012
2013
Tool Demo /
Improvement
Supplier Tool Development
Alpha
2014
Beta
Pre-production
Increasing scope and complexity of process / metro capability
Wafer pool coordination for multiple use, re-use, reclaim
Bare Wafers
G450C
TW
Metrology
Cleans, Blanket Films, Etch, etc.
Imprint /Spacer doubling, 300mm Coupons
193i on 450mm
Manufacturing Execution Systems, Engineering Data Collection and
analysis tools, Virtual Fab logistics for globally-distributed tool set
6
Demonstrations Drive Tool Improvement
2012
2013
Development
2014
2015
2016
Tool Ready for
Customers
Demo Tool
Tool Improvements as Indicated by Pareto
Supplier Testing
Increasing tool maturity and data-based confidence
EMA
Report
G450C
Demo
Baseline
Report
Demo
Report
Tech Transfer
EMA
Test Plan
MDC
Gauge Study PDC
DOE Marathon
Standardized methods and consistency across all tools
7
450mm Equipment Development
Tool Selection Overview
• Immediate objective:
– Select at least one Supplier for Priority 1 and 2
tools for negotiation of Demo / full flow @ CNSE
• Criteria:
– Technical and commercial scores from RFQ
– Balance across competitive Supplier base
– Benefit to all Members and NY State
• Process:
– Research Foundation RFQ
– Member selection teams used pre-agreed criteria
– Management Council approved recommendation
Closing deals with selected Suppliers
10
450mm Cleanroom in CNSE
(NFX)
 Cleanroom ready by January 2013; First tools installed March 2013
 450mm OHV is ready, could carry 300mm FOUP in 450mm inter-bay
 4 stockers with 1000 bins ready in Feb 2013
G450C
11
G450C Test Wafers/
Operations
Wafer Availability
• Initial order for 6000 sc-Si (SEMI M76)
– Growing capability to meet 2013 need
• Initial order for 2000 cast wafers (SEMI M74)
– Provision for wafer handling needs
• Bring up additional supply in 2013
– > 15,000 wafers and progress to prime quality
(SEMI M1) needed next year
– Exploring engagement with multiple Suppliers
Establish roadmaps for cost / quality learning
13
Wafer Industry Support Model
• Suppliers providing tools for the program get access to
test wafers at significant discount to individual purchase
• Program expansion:
– Suppliers without tools in the program can also get
discounted cost if they return wafers and provide data
– Suppliers may take advantage of program volume
aggregation to procure wafers at consortium cost
• Wafer pool managed for budget, allocation to needs
• Pass on our costs beyond program capabilities for TWs
Adjust for wafer costs, reuse/regen, scrap rates, etc.
14
Wafer Cost Sharing
• To support 450mm development and maintain
Consortium budget, wafer cost will be shared with
industry
• G450C will be loaning wafers for a given duration, at a
shared cost (wafers available for purchase at 100% of
G450C cost)
• G450C cost share represents a considerable discount
from independent small volume purchases
• Factors for cost share will include usage/needs,
reuse/regen, wafer loan duration, scrap, etc.
• Test wafer process/metrology capability ‘Menu Card’
being developed for industry needs
For wafer request/loan discussion, more information
available at: http://www.g450c.org/wafer-loan.aspx
15
Wafer Quality Continues to Improve
Defects / Wafer
2010: > 3000
defects/wafer
2011: ~ 175
defects/wafer
2012: ~50
defects/wafer
August 2012: ~5
defects/wafer
recent ~ 66
Defects
per wafer
reducedusing
significantly
Year-to-year
comparison
>90nm defect sizeMost
recipe
@ 38nm
(@ 90nm
sensitivity)
Migrating
to 40nm and below
sensitivity
16
Wafer Quality Roadmap & Reclaim Capability

Wafer quality roadmap
2012
1H
2013
2H
2014
1H
2H
1H
Mechanical Wafer
2015
2H
1H
2016
2H
1H
2H
M74 Spec
Q2, 2013
Test / Mon Wafer
Prime Wafer
M76 Spec
•SFQR meet (~90% area)
•Particle (~70% pass rate)
Q2, 2014
M1 Spec
Q1, 2015
Epi Wafer
M62 Spec
Wafers meet SEMI spec

FEOL wafer reclaim capability
Supplier side
Process
Film
G450C On-site ★
Tool/service
Poly
SiN
PR
10
11
12
2013 1Q
1
2
2013 2Q
3
4
5
2013 3Q
6
7
8
2013 4Q
9
10
11
12
★
Oxide
FEOL
2012 4Q
Cleaning tool Supplier
★
★
★
17
Test Wafer Routes (Menu Card)
Front End
Route name
Route Description
5
Oxide film - thermal 110A
A
Oxide film - thermal 1000A
B
Oxide film - thermal 5000A
4
Oxide film - PECVD 1000A
D
Implanted wafers
E
PR wafers
F
PR wafers + implant
G
PR wafers
I
patterned wafers
J
Nitride film - LPCVD 1000A
K
Nitride film - LPCVD 2000A
L
Poly film (1000A)
M
Poly film (3000A)
O
Nitride film - PECVD 200A
Q
TiN film (1000A)
V
Bare wafers
W
Bare wafers Mechanical
Metals
Route name
Route Description
4a
Oxide film - PECVD 1000A
C
Low-K film
N
Ni film
P
TiN film (600A)
R
W film
S
TaN film
T
Cu films
U
Al film
Vbe
Bare wafers
Metrology Readiness
• Metrology capability expanding to support virtual test wafer
operations
Tool Type
Forecasted Ops
Ready In Japan
Forecasted Ops
Ready in New York
Advanced Bare Wafer
Inspect
Operational
Operational
Ellipsometer/
Scatterometry
Operational
1st Tool Operational
2nd Tool Ready
December 2012
4 pt Probe
Operational
Operational
Supplier Hosted
Metro Site
AFM
January 2013
Operational
TXRF
January 2013
Operational
Opaque Film
Thickness
Operational
Operational
Macro Inspection
Operational
Operational
Defect Review SEM
March 2013
May 2013
April 2013
19
G450C Operations - CNSE Cleanroom
11 tools
installed in NY
cleanroom, 3
in progress
Existing space
allows for 3-4
additional
metrology tools
incoming 2H’12 /
1H’13
20
20
On Site Equipment Progress - Films
PECVD Uniformity example
SiN
 Thickness uniformity
 SiN: 5.06 %  1.46 %
 Ox: 14.5 %  1.62 %
 Throughput
 Compatible to 300 mm Ox
Q2,
2012
Q3,
2012
5.06
%
1.46
%
14.5
%
1.62
%
21
Wet Clean and Wafer Recycling
Wet Cleaning:
Optimizing early tool
Bar brush
Recycled
Recent optimization
oxide wafer:
Front side
Back side
22
On Site Equipment Progress: Defects
Particle Inspection A: on site
• Passed qualification (in July)
– Current particle sensitivity 38nm
– Continue improving to 30nm
Particle Inspection B: off site
• To be moved in soon
– Bare Si wafer particle sensitivity demo < 30nm
– Target sensitivity at ~ 25nm
23
Summary and Opportunities –
Test Wafer Operations
Summary
•
•
•
•
•
•
Silicon supply capability improving across the industry
G450C operations have resulted in cleaner wafers
Proven logistics in place, continuous improvement underway
Processed wafer loans increasing
Multiple Wafer Carrier suppliers in place and progressing well
G450C expanding equipment base in existing clean room
Your Opportunities
• Leverage G450C Wafer Bank to accelerate your equipment
development
• Engage G450C for wafer loan requests via website
http://www.g450c.org/wafer-loan.aspx
24
Lithography Update
G450C Lithography Tool Roadmap
2012
2H
2013
1H
2H
2014
1H
2H
2015
1H
2H
2016
1H
2H
300mm Imprint
193i Coupon, EUV Coupon
193i patterning access at
Supplier site
Positive
450mm Imprint + Spacer
Coupon + Imprint
Potential G450C
tool @ CNSE
Lithography Strategy
• Imprint solution before optical lithography available
– Imprint + Spacer extends resolution to 14-15 nm (2013 - 2014)
• Pull in early 193i tool to 2H14
• Expect 193i Litho full demo capability 2015 - 2016
Working on an Industry solution to
accelerate 450mm scanner development
28
Imprint as Interim Patterning Measure
 450 mm tool is completed, operational by end of 2012
 Explore spacer process to extend ~20nm to 10 nm
 Litho, Etch, Films engineering team developing templates and
processes to prepare patterned test wafers
 Work with Suppliers to build up complete process
Coupons – 193i / EUV
Imprint
30nm 1:2
40nm 1:2
29
300mm Nano Imprint Performance
 Good CDU, Line edge
 Successfully etched SiN & APF
 Poly Spacer etch on-going
Good CDU, LER;
Profile OK, Rdl ~15nm
 Coating at Supplier site
 Solving particle issues
Working on re-work issue
SiN & APF (amorphous carbon) etching
450mm Nano Imprint Status
 450mm tool is ready in Nov, (Austin) –tuning process
 Template design: 22nm ok, verify 14nm capability
 Poly spacer for pitch doubling – on going
 Negotiate 1st phase patterning wafer capacity in Austin
450mm
Demonstration Test Methods
(DTM)
Equipment Performance Metrics (EPM)
• “1X nm Range” technology targeted for 2013-14 G450C
demonstrations – “ITRS 14 nm Nominal”
– Snapshot in continuum of technology progression
– Performance of 450 mm and 300 mm tools advances in lock-step
• Update Process (by end of 2012):
– Suppliers propose competitive performance at ‘14 nm” without
revealing sources of guidance or disclosing customer IP
– Consortium staff take best Supplier proposals for each tool type to
propose EPMs
– Consult with Suppliers for aligned output
– Validate EPMs meet Member Companies needs
• Implementation
– Ensure Demo test plans allow for full range of tool performance
– Report the data for each tool with comparison to Demo EPM
34
Updated Equipment Performance Metrics
Millisecond Anneal Example
Attribute
14nm targets for demo
Units
Metrics
sec
1E-4 ~ 1E-1
(0.1msec to 100msec)
C/sec
> 1E+4
Peak temperature Within Wafer uniformity
(3σ )
C
<10
Mean peak temperature Wafer to wafer
uniformity (3σ )
C
<5
Center-to-edge variation through ramp
range
C
< 10
Pulse width (measured at peak-50C)
Ramp-up Speed (250 - 1350C)
Agreed with all Suppliers
Publish update by EOY
Ramp-down Speed (1350C to 650C)
Overshoot (250C - 1350C)
C/sec
> 100
C
<2
Setting Time (250C - 1350C) to within 1% of
set point
sec
< 1E-5
Slip-free process at maximum temperature
C
1300 (1350)
Residual oxygen concentration (400-1100C)
ppm
<5
Defects, PWP
On bare Si ≥ 30nm, mechanical transfer only
#/cm2
< 0.0028
Defects, PWP
Backside on Si ≥ 50 nm, mechanical transfer
only
#/cm2
< 0.28
Defects, PWP
On bare Si ≥ 26nm (with process)
#/cm2
< 0.007
Defects, PWP
Backside on Si ≥ 50 nm (with process)
#/cm2
< 0.28
Demonstration Test Methods
(DTM) Overview
36
Demonstration Test Methods (DTM)
DTM Components
Duration
2-6 months
• Equipment Maturity Assessment (EMA) includes a couple of dozen parameters with clear categorization of
the tool characteristics based on defined criteria, as well as compliance with applicable standards; output
is a report recommending pre-test actions and testing levels
• Test planning is based on the tool maturity, goals for reliability, throughput of the tool and confidence
objectives, combining any Supplier pre-data with demo testing via Bayesian statistics
• Gauge Studies run for all metrology needed for the demo to ensure adequate Precision/Tolerance ratios
• Mechanical Dry Cycle (MDC) - nominally 5000 cycles of the wafer movement functions without process for
reliability and mechanical handling defect data
• Passive Data Collection (PDC) - a test of process stability on a baseline recipe for each application.
• Initial data is analyzed and a Baseline Characterization Report issued; decisions are made about
subsequent testing or reversion to tool development to address any hurdles
• Sensitivity Analysis - DOE optimization of the recipe(s) and RSM characterization of the process window(s)
• Marathon - 24/7 manufacturing simulation to capture tool productivity and reliability performance using
E10 states over a significant period, running process with sample testing to capture rates/variability,
defectivity and tool-specific performances like step coverage, gap fill, LER, etc..
• A final report is drafted, the Supplier has opportunity for comment, recommendations for tool
improvement are made and demo is completed with web publication
37
Demonstration Test Methods (DTM)
Standardized Reports
Executive Summary
Demo Test Background
• History and previous testing
• EMA Report
• Test Plan
Test Results
• Process Capability
Performance
− Gauge study
− PDC
− Sensitivity Analysis (SA)
− Marathon Test
• Equipment Performance
− MDC
− Marathon Test
• Others
− CoO, Standards
compliance, software &
user interface, factory
integration
Conclusions
Supplier Input
38
Compliance with SEMI Standards Required
(www.semi.org)
• SEMI E5: SECS II
• SEMI E30, E30.1, E30.5: GEM ("Fully GEM Compliant" as well as GEM
Compliant per section 8)
• SEMI E37: HSMS
• SEMI E37.1: HSMS-SS
• SEMI E39, E39.1: Object Services Standard: Concepts, Behavior and Services
• SEMI E40, E40.1: Standard for Processing Management (PJM)
• SEMI E87, E87.1: Specification for Carrier Management (CMS)
• SEMI E84, E84.1: Specification for Enhanced Carrier Handoff Parallel I/O
Interface
• SEMI E90, E90.1: Specification for Substrate Tracking (STS)
• SEMI E94, E94.1: Specification for Control Job Management (CJM) Stream 7
Process Program Management for recipes (E5, E30)
Definition and measurement of equipment reliability, availability, and
maintainability during program testing will conform to SEMI E10-0304
39
100% Compliance to Safety/Ergo Requirements
Self-audit completed and findings released (all medium to high risk nonconformances are to be addressed):
• S2-0200: Safety Guidelines for Semiconductor Manufacturing Equipment
including Operational Hazard Analysis covering tool installation, operation and
maintenance (per S2-0200) completed for tool install operation / maintenance
• S8-0308: Safety guidelines for ergonomics engineering of semiconductor
manufacturing equipment
• Environmental Characterization Data Summary Work Sheet 6 per International
Semiconductor Manufacturing Initiative (ISMI) guideline #06124825A-ENG
completed and provided electronically prior to shipment
It is an absolute requirement that all equipment must be safe to operate and
maintain at any stage of maturity
Equipment spare parts and modules must either be small and light enough to
handle safely during maintenance, and clearances adequate, or ergonomic
handling aids must be provided
40
Further Standards-related Requirements
• Footprint, height and weight dimensions of the Equipment as well as the
move-in packages must conform to SEMI E72 specifications
• The Equipment loadport must have a RF ID reader compatible with RFID
tags (model numbers TIRIS multipage MicroTag RI-TRP-DR2B) on the FOUP
per SEMI E99
• The system must have adequate PGV docking interface exclusion zone per
SEMI E64-0600 modified as needed for the SEMI E154 450mm load port
• The Equipment configuration must have a minimum of one load port that
confirms to latest revision of SEMI E154
• The Equipment load port must be capable of receiving 450mm FOUPs
confirming to SEMI E158.
• The Equipment load port must be capable of receiving lots delivered by
450mm Personnel Guided Vehicles (PGVs)
G450C will require SEMI M74 Mechanical Wafer, M76 Developmental Test
Wafer and M1 Prime Wafer Standards and use SEMI-compliant carriers for all
program test wafer pool /demo purposes
41
Facilities-Related Standards
• The Equipment must comply with the current versions of the (U.S.) National Electric
Code - NFPA 70 and Uniform Fire Code - NFPA 79
• The Equipment must be designed to SEMI F47 “Specification for Semiconductor
Processing Equipment Voltage Sag Immunity”
• All Equipment and materials which will come into direct contact with the wafer or
FOUP should be grounded per SEMI Spec E78-0706.
• All Equipment enclosures must have an IEC ingress protection rating of IP31 or
better
• SEMI E6-1296 facilities interface datasheets completed and provided electronically
prior to shipment
It is recommended that the 450mm Equipment is designed to EU regulatory
requirements including, but not limited to, Machinery Directive 98/37/EC, Pressure
Equipment Directive 97/23/EC, Electromagnetic Compatibility Directive 89/336/EEC,
and Low Voltage Directive 73/23/EEC as applicable
42
Industry Collaboration and
Engagement
Global Supply Chain Ecosystem
Example: G450C Linkages
Core G450C
Program
Process & Metrology
Guidelines &
Requirements
Regional Tool Suppliers
not in G450C core program
Regional
450mm
Opportunities
Wafer Pool
Wafer
Suppliers
Tool Suppliers
w/G450C
Demos
• Component Suppliers
• Infrastructure Providers
EEMI
450
Adjunct
Tool
Demos
and CIP
projects
KSIA
I450Metro
…
+ R&D entities:
FhG
IMEC
…
Standardization Opportunities
Global Standards
Regional Cooperation
G450C
Program
Activities
EHS optimization
Guidelines
Compliance testing
Facilities optimization
Equipment optimization
Discussion this week with ESG-J
Facilities Council
Standardization WG
G450C
Groups
Back End (Die Prep) WG
TBD: Harmonize microcontamination specs
TBD: Metrology collaboration
46
Precompetitive Cooperation
• Identified top facilities project objective with M+W
• Identified top standardization focus areas with SEMI
• Defined pilot project: tool installation at CNSE with
adaptor plate and consolidated points of connection
• F450C membership defined and first meeting with G450C
rolled out project priorities toward proposals
• Workshop planned with SEMI, F450C and G450C for early
1Q13 to explore further work
• 14nm EPM update with standards guidance based on
Supplier tool agreements to be published by end of year
47
Top Areas for Precompetitive Cooperation
with SEMI and F450C (first targets)
• Top Standardization interest areas
–
–
–
–
–
Aisle space / width, ceiling height
General sizing/loading/dimensions
EMO interface, control architecture
Crane, gantry
Templates
• Top facilities project interest areas
–
–
–
–
–
–
Gas interface boxes, VMBs, cooling water manifolds, etc.
Minimize facilities POCs
Standard hookups for power, PCW, CDA, PV, GN2, exhaust, datacom
Improved AMC detection/response
Pumps and pump frames, etc.
He recycling (Backside cooling ), H2 recycling (EUV)
48
TEL Facilities Cost Reductions in Albany
49
G450C
Page 50
Summary
• G450C has launched with full industry
momentum
• Significant progress towards the 450 mm
transition is continuing in all areas of the supply
chain
• Collaboration and synchronization remain
critical for a cost effective and timely 450 mm
transition
51
Questions and
Discussion
450 mm Reference Materials Location
and Contact Information
• Guidelines and other public documents, including Wafer
Loan Program Details, Demonstration Test Methods and
Equipment Performance Metrics can be found at:
http://g450c.org
• For further information or to engage in opportunities with
the Global 450 mm Consortium program:
Dave Skilbred
G450C Program Coordination Director
david.skilbred@g450c.org
518.441.7656
53