SKM 195 GB 063 DN ...
Absolute Maximum Ratings
Values
Symbol Conditions 1)
VCES
VCGR
IC
ICM
VGES
Ptot
Tj, (Tstg)
Visol
humidity
climate
Units
RGE = 20 kΩ
Tcase = 25/80 °C
Tcase = 25/80 °C; tp = 1 ms
per IGBT, Tcase = 25 °C
AC, 1 min.
IEC 60721-3-3
IEC 68 T.1
600
600
250 / 190
500 / 380
± 20
960
–40 ... +150 (125)
2 500
class 3K7/IE32
40/125/56
V
V
A
A
V
W
°C
V
200 / 140
500 / 380
1 400
9800
A
A
A
A2s
SEMITRANS® M
Superfast NPT-IGBT
Modules
SKM 195 GB 063 DN
SKM 195 GAL 063 DN 6)
SKM 195 GAR 063 DN 6)
Inverse Diode and FWD of type “GAL,GAR“6) 8)
IF = –IC
IFM = –ICM
IFSM
I 2t
Tcase = 25/80 °C
Tcase = 25/80 °C; tp = 1 ms
tp = 10 ms; sin.; Tj = 150 °C
tp = 10 ms; Tj = 150 °C
SEMITRANS 2N (low inductance)
Characteristics
Symbol Conditions 1)
V(BR)CES VGE = 0, IC = 4 mA
VGE(th)
VGE = VCE, IC = 4 mA
ICES
Tj = 25 °C
VGE = 0
VCE = VCES Tj = 125 °C
IGES
VGE = 20 V, VCE = 0
VCEsat
IC = 200 A VGE = 15 V;
Tj = 25 (125) °C
gfs
VCE = 20 V, IC = 200 A
CCHC
Cies
Coes
Cres
LCE
td(on)
tr
td(off)
tf
Eon
Eoff
per IGBT
VGE = 0
VCE = 25 V
f = 1 MHz
(terminal 2 - 3)
VCC = 300 V
VGE = +15 V / –15 V3)
IC = 200 A, ind. load
RGon = RGoff = 8 Ω
Tj = 125 °C
6)
min.
typ.
max.
Units
4,5
–
–
–
–
–
40
–
5,5
0,2
7
–
2,1(2,4)
–
–
–
6,5
–
–
0,3
2,5(2,8)
–
–
V
V
mA
mA
µA
V
V
S
–
–
–
–
–
–
11,2
1250
750
–
350
–
–
–
25
pF
nF
pF
pF
nH
–
–
–
–
–
–
120
85
460
50
11,5
7,5
–
–
–
–
–
–
ns
ns
ns
ns
mWs
mWs
–
–
–
–
–
–
1,45(1,35)
1,55(1,55)
–
4
75
13
1,7
1,9
0,9
5,5
–
–
V
V
V
mΩ
A
µC
–
–
–
–
–
–
0,13
0,3
0,05
°C/W
°C/W
°C/W
≥ VCES
Inverse Diode and FWD of type “GAL,GAR”6) 8)
VF = VEC
VF = VEC
VTO
rt
IRRM
Qrr
IF = 150 A
VGE = 0 V;
Tj = 25 (125) °C
IF = 200 A
Tj = 125 °C
Tj = 125 °C
IF = 200 A; Tj = 125 °C2)
IF = 200 A; Tj = 125 °C2)
Thermal characteristics
Rthjc
Rthjc
Rthch
per IGBT
per diode
per module
6)
GB
Typical Applications
• Switching (not for linear use)
• Switched mode power supplies
• AC inverter drives
• UPS uninterruptable power
supplies
1)
2)
4)
6)
8)
000829
GAR
Features
• N channel, homogeneous Silicon
structure (NPT-Non-Punchthrough IGBT)
• Low tail current with low
temperature dependence
• High short circuit capability, self
limiting
• Pos. temp. coeff. of VCEsat
• Low inductance case
• Fast & soft inverse CAL diodes 8)
• Without hard mould
• Large clearance (10 mm) and
creepage distances (20 mm)
3)
© by SEMIKRON
GAL
Tcase = 25 °C, unless otherwise
specified
IF = – IC, VR = 300 V, –diF/dt = 1500
A/µs, VGE = 0 V
Use VGEoff = – 5 ... – 15 V
For switch-off of 2 * ICN = 400 A use
Rgoff ≥ 12 Ω.
For switch-off of short circuit use
Rgoff ≥ 25 Ω.
The free-wheeling diodes of the GAL
type have the data of the inverse
diodes.
CAL = Controlled Axial Lifetime
Technology
B 6 – 13
SKM 195 GB 063 DN ...
M195GB063DN.xls - 1
1000
W
900
M195GB063DN.xls - 2
50
Tj = 125 °C
VCC = 300 V
VGE = ± 15 V
RG = 8 Ω
mWs
40
800
Eon
700
30
600
500
20
400
300
Eoff
10
200
100
Ptot
0
E
0
0
TC
20
40
60
80
100
120
0
140 160
°C
Fig. 1 Rated power dissipation Ptot = f (TC)
50
100 150 200 250 300 350 400 450
A
Fig. 2 Turn-on /-off energy = f (IC)
M195GB063DN.xls - 3
40
mWs
35
IC
Tj = 125 °C
VCC = 300 V
VGE = ± 15 V
IC = 200 A
Eon
30
M195GB063DN.xls - 4
1000
1 pulse
TC = 25 °C
Tj ≤ 150 °C
tp=22µs
A
100µs
100
25
1ms
20
10
10ms
Eoff
15
10
1
IC
5
Not for
linear use
E
0
0,1
0 RG
10
20
30
40
Ω
50
60
1
Fig. 3 Turn-on /-off energy = f (RG)
10
100
1000
10000
V
Fig. 4 Maximum safe operating area (SOA) IC = f (VCE)
M195GB063DN.xls - 5
2,5
VCE
2
M195GB063DN.xls - 6
12
Tj ≤ 150 °C
VGE = ± 15 V
RGoff = 8 Ω
IC = 200 A
10
di/dt= 500 A/µs
1400 A/µs
2500 A/µs
8
1,5
Tj ≤ 150 °C
VGE = ± 15 V
L = 50 nH
IC = 200 A
6
1
0,5
ICpuls/IC
4
allowed numbers of
short circuits: <1000
2
time between short
circuits: >1s
ICSC/IC
0
0
0
100
VCE
200
300
400
500
600
700
Fig. 5 Turn-off safe operating area (RBSOA)
B 6 – 14
0
V
100
VCE
200
300
400
500
600
700
V
Fig. 6 Safe operating area at short circuit IC = f (VCE)
000829
© by SEMIKRON
SKM 195 GB 063 DN ...
M195GB063DN.xls - 8
280
Tj = 150 °C
VGE ≥ 15V
A
240
200
160
120
80
40
IC
0
0
TC
20
40
60
80
100
120
140
°C
160
Fig. 8 Rated current vs. temperature IC = f (TC)
M195GB063DN.xls - 9
400
A
M195GB063DN.xls - 10
400
A
350
350
17V
15V
13V
11V
9V
7V
300
250
17V
15V
13V
11V
9V
7V
300
250
200
200
150
150
100
100
50
50
IC
IC
0
0
0
VCE
1
2
3
4
V
5
Fig. 9 Typ. output characteristic, tp = 250 µs; Tj = 25 °C
0
VCE 1
2
3
4
5
V
Fig. 10 Typ. output characteristic, tp = 250 µs; Tj = 125 °C
Pcond(t) = VCEsat(t) · IC(t)
400
A
350
VCEsat(t) = VCE(TO)(Tj) + rCE(Tj) · IC(t)
300
M195GB063DN.xls - 12
250
VCE(TO)(Tj) ≤ 1,2 – 0,001 (Tj –25) [V]
typ.: rCE(Tj) = 0,0045 + 0,00002 (Tj –25) [Ω]
max.: rCE(Tj) = 0,0065 + 0,00002 (Tj –25) [Ω]
+2
valid for VGE = + 15 –1
150
100
50
IC
[V]; IC ≥ 0,3 ICn
Fig. 11 Saturation characteristic (IGBT)
Calculation elements and equations
© by SEMIKRON
200
0
0
VG
2
4
6
8
10
V
12
14
Fig. 12 Typ. transfer characteristic, tp = 250 µs; VCE = 20 V
000829
B 6 – 15
SKM 195 GB 063 DN ...
M195GB063DN.xls - 13
20
V
M195GB063DN.xls - 14
100
ICpuls = 200 A
VGE = 0 V
f = 1 MHz
nF
100V
16
Cies
10
300V
12
Coes
8
1
Cres
4
C
VGE
0,1
0
0 QGate
200
400
600
0
800
nC
Fig. 13 Typ. gate charge characteristic
Tj = 125 °C
VCC = 300 V
VGE = ± 15 V
RGon = 8 Ω
RGoff = 8 Ω
ind. load
tdoff
ns
10
20
30
V
Fig. 14 Typ. capacitances vs.VCE
M195GB063DN.xls - 15
1000
VCE
tr
M195GB063DN.xls - 16
10000
ns
tdoff
1000
tdon
tdon
100
Tj = 125 °C
VCC = 300 V
VGE = ± 15 V
IC = 200 A
ind. load
tr
tf
100
tf
t
t
10
10
0
100
IC
200
300
400
0
500
Fig. 15 Typ. switching times vs. IC
20
30
40
50
Ω
M195GB063DN.xls - 18
2,8
RG=
mJ
2,4
A
5Ω
160
Tj=125°C, typ.
Tj=25°C, typ.
Tj=125°C, max.
Tj=25°C, max.
120
60
Fig. 16 Typ. switching times vs. gate resistor RG
M195GB063DN.xls - 17
200
10
RG
A
8Ω
2
12 Ω
1,6
25 Ω
1,2
80
VR = 300 V
Tj = 125 °C
VGE = ± 15 V
50 Ω
0,8
40
0,4
EoffD
IF
0
0
0
VF
0,4
0,8
1,2
1,6
V
Fig. 17 Typ. CAL diode forward characteristic
B 6 – 16
0
2
IF
50
100
150
200
A
Fig. 18 Diode turn-off energy dissipation per pulse
000829
© by SEMIKRON
SKM 195 GB 063 DN ...
M195GB063DN.xls - 19
1
M195GB063DN.xls - 20
1
K/W
K/W
0,1
0,1
0,01
0,001
single pulse
0,001
single pulse
ZthJC
ZthJC
0,0001
0,00001 0,0001
tp
D=0,50
0,20
0,10
0,05
0,02
0,01
0,01
D=0,50
0,20
0,10
0,05
0,02
0,01
0,001
0,01
0,1
0,0001
0,00001
1
s
Fig. 19 Transient thermal impedance of IGBT
ZthJC = f (tp); D = tp / tc = tp · f
5Ω
A
0,01
0,1
1
s
M195GB063DN.xls - 23
R G= 5 Ω
160
140
140
120
8Ω
120
100
12 Ω
100
80
25 Ω
12 Ω
25 Ω
50 Ω
60
40
40
20
IRR
20
IRR
VR = 300 V
Tj = 125 °C
VGE = ± 15 V
IF = 200 A
8Ω
80
50 Ω
60
0,001
180
VR = 300 V
Tj = 125 °C
VGE = ± 15 V
RG
0,0001
Fig. 20 Transient thermal impedance of
inverse CAL diodes ZthJC = f (tp); D = tp / tc = tp · f
M195GB063DN.xls - 22
180
A
160
tp
0
0
0
50
IF
100
150
200
A
0
250
Fig. 22 Typ. CAL diode peak reverse recovery
current IRR = f (IF; RG)
diF/dt
1000
2000
3000
4000
5000
A/µs
Fig. 23 Typ. CAL diode peak reverse recovery current
IRR = f (di/dt)
M195GB063DN.xls - 24
18
µC
16
12 Ω
14
8Ω
R G=
5Ω
25 Ω
IF=200 A
VR = 300 V
Tj = 125 °C
VGE = ± 15 V
150 A
50 Ω
12
100 A
10
75 A
8
50 A
6
4
Qrr
2
0
0
1000
diF/dt
2000
3000
4000
5000 6000
A/µs
Fig. 24 Typ. CAL diode recovered charge
© by SEMIKRON
000829
B 6 – 17
SKM 195 GB 063 DN ...
SEMITRANS 2N (low inductance)
Case D 93
UL Recognized
File no. E 63 532
SKM 195 GB 063 DN
Dimensions in mm
SKM 195 GAL 063 DN
SKM 195 GAR 063 DN
Case D 94 ( → D 93)
Case D 95 ( → D 93)
Case outline and circuit diagrams
Mechanical Data
Symbol Conditions
M1
M2
a
w
to heatsink, SI Units
to heatsink, US Units
for terminals, SI Units
for terminals, US Units
Values
(M6)
(M5)
Units
min.
typ.
max.
3
27
2,5
22
–
–
–
–
–
–
–
–
5
44
5
44
5x9,81
160
Nm
lb.in.
Nm
lb.in.
m/s2
g
This is an electrostatic discharge
sensitive device (ESDS).
Please observe the international
standard IEC 747-1, Chapter IX.
Eight devices are supplied in one
SEMIBOX A without mounting hardware, which can be ordered separately under Ident No. 33321100 (for
10 SEMITRANS 2)
Larger packing units of 20 pieces
are used if suitable
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or
implied is made regarding delivery, performance or suitability.
B 6 – 18
000829
© by SEMIKRON