< IGBT MODULES >
CM1000DXL-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
Collector current I C .............….......................…
9 0 0 A*
Collector-emitter voltage V CES ......................… 1 2 0 0 V
Maximum junction temperature T j m a x ..............
1 7 5 °C
●Flat base Type
●Copper base plate (non-plating)
●Tin plating pin terminals
●RoHS Directive compliant
Dual switch (Half-Bridge)
●Recognized under UL1557, File E323585
APPLICATION
AC Motor Control, Motion/Servo Control, Power supply, etc.
OUTLINE DRAWING & INTERNAL CONNECTION
TERMINAL
Dimension in mm
SECTION A
INTERNAL CONNECTION
Tolerance otherwise specified
Division of Dimension
Es1 G1 TH2 TH1 Cs1
(62) (61) (57) (56) (52)
Tolerance
0.5
to
3
±0.2
over
3
to
6
±0.3
over
6
to
30
±0.5
over 30
to 120
±0.8
over 120
to 400
±1.2
C1
(1)
Es2 G2 Cs2
(47) (46) (42)
Th
NTC
C1
(2)
The tolerance of size between
terminals is assumed to be ±0.4.
t=0.8
E2
(3)
E2
(4)
Publication Date : December 2013
1
Tr1
Di1
Tr2
Di2
C1E2
(33)
C1E2
(32)
< IGBT MODULES >
CM1000DXL-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified)
INVERTER PART IGBT/DIODE
Symbol
Item
VCES
Collector-emitter voltage
VGES
Gate-emitter voltage
IC
Conditions
ICRM
Total power dissipation
(Note1)
IEM
(Note1)
IERM
(Note1)
± 20
V
(Note2, 4)
900 *
(Note3)
2000
TC=25 °C
DC
(Note2, 4)
7500
(Note2)
W
900 *
(Note2)
Emitter current
A
1000
Pulse, Repetitive
IE
V
(Note2)
Collector current
Ptot
Unit
1200
C-E short-circuited
DC, TC=124 °C
ICM
Rating
G-E short-circuited
A
1000
Pulse, Repetitive
(Note3)
2000
MODULE
Symbol
Rating
Unit
Isolation voltage
Terminals to base plate, RMS, f=60 Hz, AC 1 min
2500
V
Tjmax
Maximum junction temperature
Instantaneous event (overload)
175
TCmax
Maximum case temperature
(Note4)
125
Tjop
Operating junction temperature
Continuous operation (under switching)
-40 ~ +150
Tstg
Storage temperature
-
-40 ~ +125
Visol
Item
Conditions
°C
°C
ELECTRICAL CHARACTERISTICS (T j =25 °C, unless otherwise specified)
INVERTER PART IGBT/DIODE
Symbol
Item
Limits
Conditions
Min.
Typ.
Max.
Unit
ICES
Collector-emitter cut-off current
VCE=VCES, G-E short-circuited
-
-
1.0
mA
IGES
Gate-emitter leakage current
VGE=VGES, C-E short-circuited
-
-
0.5
μA
VGE(th)
Gate-emitter threshold voltage
IC=100 mA, VCE=10 V
V
VCEsat
(Terminal)
Collector-emitter saturation voltage
VCEsat
(Chip)
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer capacitance
QG
Gate charge
td(on)
Turn-on delay time
tr
Rise time
td(off)
Turn-off delay time
tf
Fall time
VEC
(Note1)
(Terminal)
Emitter-collector voltage
VEC
5.4
6.0
6.6
T j =25 °C
-
1.85
2.30
Refer to the figure of test circuit
T j =125 °C
-
2.05
-
(Note5)
T j =150 °C
-
2.10
-
IC=1000 A, VGE=15 V,
(Note1)
(Chip)
IC=1000 A,
T j =25 °C
-
1.70
2.15
VGE=15 V,
T j =125 °C
-
1.90
-
(Note5)
T j =150 °C
-
1.95
-
-
-
100
VCE=10 V, G-E short-circuited
VCC=600 V, IC=1000 A, VGE=15 V
VCC=600 V, IC=1000 A, VGE=±15 V,
RG=0 Ω, Inductive load
-
-
20
-
-
1.7
-
2300
-
-
-
800
-
-
200
-
-
600
-
-
300
IE=1000 A, G-E short-circuited,
T j =25 °C
-
1.85
2.30
Refer to the figure of test circuit
T j =125 °C
-
1.85
-
(Note5)
T j =150 °C
-
1.85
-
T j =25 °C
-
1.70
2.15
G-E short-circuited,
T j =125 °C
-
1.70
-
(Note5)
T j =150 °C
-
1.70
-
IE=1000 A,
V
V
nF
nC
ns
V
V
trr
(Note1)
Reverse recovery time
VCC=600 V, IE=1000 A, VGE=±15 V,
-
-
300
ns
Qrr
(Note1)
Reverse recovery charge
RG=0 Ω, Inductive load
-
53.3
-
μC
Publication Date : December 2013
2
< IGBT MODULES >
CM1000DXL-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS (cont.; T j =25 °C, unless otherwise specified)
INVERTER PART IGBT/DIODE
Symbol
Item
Limits
Conditions
Min.
Typ.
Max.
Unit
Eon
Turn-on switching energy per pulse
VCC=600 V, IC=IE=1000 A,
-
45.6
-
Eoff
Turn-off switching energy per pulse
VGE=±15 V, RG=0 Ω, T j =150 °C,
-
97.1
-
Reverse recovery energy per pulse
Inductive load
-
96.7
-
mJ
-
-
0.5
mΩ
-
2.0
-
Ω
(Note1)
Err
R CC'+EE'
Internal lead resistance
rg
Internal gate resistance
Main terminals-chip, per switch,
TC=25 °C
(Note4)
Per switch
mJ
NTC THERMISTOR PART
Symbol
Item
Limits
Conditions
(Note4)
R25
Zero-power resistance
TC=25 °C
∆R/R
Deviation of resistance
R100=493 Ω, TC=100 °C
(Note4)
B(25/50)
B-constant
Approximate by equation
P25
Power dissipation
TC=25 °C
(Note6)
(Note4)
Max.
Unit
Min.
Typ.
4.85
5.00
5.15
kΩ
-7.3
-
+7.8
%
-
3375
-
K
-
-
10
mW
THERMAL RESISTANCE CHARACTERISTICS
Symbol
Rth(j-c)Q
Rth(j-c)D
Rth(c-s)
Item
Thermal resistance
Contact thermal resistance
Limits
Conditions
Junction to case, per Inverter IGBT
Junction to case, per Inverter DIODE
(Note4)
(Note4)
Case to heat sink, per 1 module,
Thermal grease applied
(Note4, 7)
Unit
Min.
Typ.
Max.
-
-
20
K/kW
-
-
38
K/kW
-
7
-
K/kW
MECHANICAL CHARACTERISTICS
Symbol
Mt
Ms
Item
Mounting torque
m
mass
ds
Creepage distance
da
Clearance
ec
Flatness of base plate
Limits
Conditions
Min.
Typ.
Max.
Unit
Main terminals
M 6 screw
3.5
4.0
4.5
N·m
Mounting to heat sink
M 5 screw
2.5
3.0
3.5
N·m
-
690
-
g
Terminal to terminal
13.69
-
-
Terminal to base plate
15.7
-
-
Terminal to terminal
13.69
-
-
Terminal to base plate
14.88
-
-
±0
-
+100
On the centerline X, Y
(Note8)
mm
mm
μm
Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (DIODE).
2. Junction temperature (T j ) should not increase beyond T j m a x rating.
3. Pulse width and repetition rate should be such that the device junction temperature (T j ) dose not exceed T j m a x rating.
4. Case temperature (TC) and heat sink temperature (T s ) are defined on the each surface (mounting side) of base plate and heat sink just under
the chips. Refer to the figure of chip location.
5. Pulse width and repetition rate should be such as to cause negligible temperature rise.
R
1
1
6. B ( 25 / 50)  ln( 25 ) /(

)
R 50 T25 T50
R25: resistance at absolute temperature T25 [K]; T25=25 [°C]+273.15=298.15 [K]
R50: resistance at absolute temperature T50 [K]; T50=50 [°C]+273.15=323.15 [K]
7. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).
Publication Date : December 2013
3
< IGBT MODULES >
CM1000DXL-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
+: Convex
-: Concave
Note8. Base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure.
X
Y
mounting side
-: Concave
mounting side
Label side
mounting side
+: Convex
9. Use the following screws when mounting the printed circuit board (PCB) on the stand offs.
"φ2.6×10 or φ2.6×12 B1 tapping screw"
The length of the screw depends on thickness (t1.6~t2.0) of the PCB.
*: DC current rating is limited by power terminals.
RECOMMENDED OPERATING CONDITIONS
Symbol
Item
Conditions
VCC
(DC) Supply voltage
Applied across C1-E2
VGEon
Gate (-emitter drive) voltage
Applied across G1-Es1/G2-Es2
RG
External gate resistance
Per switch
CHIP LOCATION (Top view)
Limits
Min.
Typ.
Max.
Unit
-
600
850
V
13.5
15.0
16.5
V
0
-
5.1
Ω
Dimension in mm, tolerance: ±1 mm
Tr1/Tr2: IGBT, Di1/Di2: DIODE, Th: NTC thermistor
Publication Date : December 2013
4
< IGBT MODULES >
CM1000DXL-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
TEST CIRCUIT AND WAVEFORMS
1,2
1,2
52
Shortcircuited
VGE=15V
IC
61
62
42
VGE=15V
46
3,4
Tr1
62
V
32,33
42
32,33
Shortcircuited
46
3,4
47
42
IE
46
3,4
47
Tr2
52
61
62
Shortcircuited
IC
46
47
IE
V
32,33
42
Shortcircuited
Shortcircuited
61
V
32,33
1,2
52
Shortcircuited
61
62
V
1,2
52
3,4
47
Di1
Di2
V C E s a t test circuit
VEC test circuit
vGE
52
0V
+VGE
0
+
32,33
VCC
iE
t
90 %
t
42
vGE
-VGE
trr
0A
Irr
RG
0
0.5×I r r
46
iC
10%
0A
47
tr
td(on)
3,4
tf
td(off)
t
Switching characteristics test circuit and waveforms
t r r , Q r r test waveform
iE
vCE
Q r r =0.5×I r r ×t r r
IE
iC
～
～
62
vCE
90 %
Load
61
-VGE
～
～
iE
1,2
iC
iC
ICM
VCC
ICM
VCC
IEM
vEC
vCE
t
0A
0
0.1×ICM
0.1×VCC
t
0
0.1×VCC
0.02×ICM
ti
ti
IGBT Turn-on switching energy
IGBT Turn-off switching energy
t
VCC
0V
t
ti
FWDi Reverse recovery energy
Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing)
Publication Date : December 2013
5
< IGBT MODULES >
CM1000DXL-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
INVERTER PART
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
T j =25 °C
VGE=15 V
(Chip)
(Chip)
3.5
2000
VGE=20 V
13.5 V
1800
12 V
15 V
(V)
COLLECTOR-EMITTER
SATURATION VOLTAGE VCEsat
1400
IC
(A)
1600
COLLECTOR CURRENT
T j =150 °C
3.0
11 V
1200
1000
800
10 V
600
9V
400
T j =125 °C
2.5
2.0
T j =25 °C
1.5
1.0
0.5
200
0.0
0
0
2
4
6
8
COLLECTOR-EMITTER VOLTAGE
0
10
VCE
200
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
T j =25 °C
800
1000
1200
1400
IC
1600
1800
2000
(A)
G-E short-circuited
(Chip)
(Chip)
10000
T j =125 °C
IC=2000 A
8
1000
IE
(A)
IC=1000 A
6
EMITTER CURRENT
(V)
600
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
COLLECTOR-EMITTER
SATURATION VOLTAGE VCEsat
400
COLLECTOR CURRENT
IC=400 A
4
T j =150 °C
100
2
T j =25 °C
0
10
6
8
10
12
14
GATE-EMITTER VOLTAGE
16
VGE
18
20
0.0
(V)
0.5
1.0
1.5
2.0
EMITTER-COLLECTOR VOLTAGE
Publication Date : December 2013
6
3.0
2.5
VEC
(V)
< IGBT MODULES >
CM1000DXL-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
INVERTER PART
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD
---------------: T j =150 °C, - - - - -: T j =125 °C
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=600 V, IC=1000 A, VGE=±15 V, INDUCTIVE LOAD
---------------: T j =150 °C, - - - - -: T j =125 °C
1000
1000
10000
td(off)
td(off)
1000
tr
10
td(on)
tr
10
100
COLLECTOR CURRENT
1000
0.1
IC (A)
1
EXTERNAL GATE RESISTANCE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=600 V, VGE=±15 V, RG=0 Ω,
INDUCTIVE LOAD, PER PULSE
---------------: T j =150 °C, - - - - -: T j =125 °C
100
100
10
RG (Ω)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=600 V, IC/IE=1000 A, VGE=±15 V,
INDUCTIVE LOAD, PER PULSE
---------------: T j =150 °C, - - - - -: T j =125 °C
100
1000
Eon
(mJ)
SWITCHING ENERGY Eon, Eoff
Err
Eoff
10
Eon
1
(mJ)
10000
100
1000
Eoff
10
100
Err
1
10
100
1000
0.1
COLLECTOR CURRENT IC (A)
EMITTER CURRENT IE (A)
1
EXTERNAL GATE RESISTANCE
Publication Date : December 2013
7
10
100
10
RG (Ω)
REVERSE RECOVERY ENERGY Err
10
SWITCHING ENERGY (mJ)
REVERSE RECOVERY ENERGY (mJ)
SWITCHING TIME
td(on), tr
tf
100
WITCHING TIME
100
td(off), tf
(ns)
tf
(ns)
SWITCHING TIME
(ns)
td(on)
< IGBT MODULES >
CM1000DXL-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
INVERTER PART
FREE WHEELING DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD
---------------: T j =150 °C, - - - - -: T j =125 °C
CAPACITANCE CHARACTERISTICS
(TYPICAL)
G-E short-circuited, T j =25 °C
1000
1000
Irr
Cies
(ns), I r r
CAPACITANCE
10
Cres
0.1
10
0.1
1
10
COLLECTOR-EMITTER VOLTAGE
100
VCE
10
(V)
1000
IE
(A)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
(MAXIMUM)
VCC=600 V, IC=1000 A, T j =25 °C
Single pulse, TC=25°C
R t h ( j - c ) Q =20 K/kW, R t h ( j - c ) D =38 K/kW
Zth(j-c)
NORMALIZED TRANSIENT THERMAL IMPEDANCE
VGE
15
10
5
0
0
100
EMITTER CURRENT
20
(V)
100
trr
Coes
1
GATE-EMITTER VOLTAGE
trr
(A)
(nF)
100
500
1000
1500
GATE CHARGE
2000
QG
2500
3000
3500
(nC)
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
TIME
Publication Date : December 2013
8
(S)
0.1
1
10
< IGBT MODULES >
CM1000DXL-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
NTC thermistor part
TEMPERATURE CHARACTERISTICS
(TYPICAL)
10
RESISTANCE
R
(kΩ)
100
1
0.1
-50
-25
0
25
TEMPERATURE
50
T
75
100
125
(°C)
Publication Date : December 2013
9
< IGBT MODULES >
CM1000DXL-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury, fire or property damage. Remember to give due consideration to safety when
making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
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Publication Date : December 2013
10