<IGBT Modules>
CM300DY-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
Collector current IC .............….........................…
300A
Collector-emitter voltage VCES ........................… 1 2 0 0 V
Maximum junction temperature T j m a x .....................
1 7 5 °C
●Flat base Type
●Copper base plate
●RoHS Directive compliant
●UL Recognized under UL1557, File E323585
dual switch (Half-Bridge)
APPLICATION
AC Motor Control, Motion/Servo Control, Power supply, etc.
OUTLINE DRAWING & INTERNAL CONNECTION
Dimension in mm
INTERNAL CONNECTION
Publication Date : February 2015
CMH-10486
Ver.1.5
0.5
to
over
3
over
6
over
Tolerance
3
±0.2
to
6
±0.3
to
30
±0.5
30
to 120
±0.8
over 120
to 400
±1.2
1
Di1
C2E1
Tr2
E2
Di2
Tr1
C1
G1 E1
(Es1)
Division of Dimension
E2 G2
(Es2)
Tolerance otherwise specified
<IGBT Modules>
CM300DY-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified)
Rating
Unit
VCES
Symbol
Collector-emitter voltage
G-E short-circuited
1200
V
VGES
Gate-emitter voltage
C-E short-circuited
± 20
V
IC
Item
Pt ot
Pulse, Repetitive
Total power dissipation
IE
(Note1)
IERM
(Note1)
(Note2, 4)
DC, TC=119 °C
Collector current
ICRM
Conditions
TC=25 °C
DC
Emitter current
300
(Note3)
A
600
(Note2, 4)
2270
(Note2)
W
300
Pulse, Repetitive
(Note3)
A
600
Visol
Isolation voltage
Terminals to base plate, RMS, f=60 Hz, AC 1 min
2500
Tj m ax
Maximum junction temperature
Instantaneous event (overload)
175
Tcmax
Maximum case temperature
(Note4)
125
V
°C
Tjop
Operating junction temperature
Continuous operation (under switching)
-40 ~ +150
Tst g
Storage temperature
-
-40 ~ +125
°C
ELECTRICAL CHARACTERISTICS (T j =25 °C, unless otherwise specified)
Symbol
Item
Limits
Conditions
Min.
Typ.
Max.
Unit
ICES
Collector-emitter cut-off current
VCE=VCES, G-E short-circuited
-
-
1.0
mA
IGES
Gate-emitter leakage current
VGE=VGES, C-E short-circuited
-
-
0.5
μA
V G E (t h )
Gate-emitter threshold voltage
IC=30 mA, VCE=10 V
5.4
6.0
6.6
V
IC=300 A, VGE=15 V,
V C E sa t
(Terminal)
Collector-emitter saturation voltage
V C E sa t
(Chip)
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer capacitance
QG
Gate charge
td(on)
Turn-on delay time
tr
Rise time
td(off)
Turn-off delay time
tf
Fall time
T j =25 °C
-
1.80
2.25
Refer to the figure of test circuit
T j =125 °C
-
2.00
-
(Note5)
T j =150 °C
-
2.05
-
IC=300 A,
T j =25 °C
-
1.70
2.15
VGE=15 V,
T j =125 °C
-
1.90
-
(Note5)
T j =150 °C
-
1.95
-
-
-
30
-
-
6.0
-
-
0.5
-
700
-
-
-
800
-
-
200
-
-
600
VCE=10 V, G-E short-circuited
VCC=600 V, IC=300 A, VGE=15 V
VCC=600 V, IC=300 A, VGE=±15 V,
RG=0 Ω, Inductive load
-
-
300
T j =25 °C
-
1.85
2.30
Refer to the figure of test circuit
T j =125 °C
-
1.85
-
(Note5)
T j =150 °C
-
1.85
-
T j =25 °C
-
1.70
2.15
G-E short-circuited,
T j =125 °C
-
1.70
-
(Note5)
T j =150 °C
-
1.70
-
IE=300 A, G-E short-circuited,
VEC (Note.1)
(Terminal)
Emitter-collector voltage
VEC (Note.1)
(Chip)
IE=300 A,
V
V
nF
nC
ns
V
V
trr
(Note1)
Reverse recovery time
VCC=600 V, IE=300 A, VGE=±15 V,
-
-
300
ns
Qrr
(Note1)
μC
Reverse recovery charge
RG=0 Ω, Inductive load
-
16
-
Eon
Turn-on switching energy per pulse
VCC=600 V, IC=IE=300 A,
-
41
-
E of f
Turn-off switching energy per pulse
VGE=±15 V, RG=0 Ω,
-
32
-
Err
(Note1)
mJ
Reverse recovery energy per pulse
T j =150 °C, Inductive load
-
22
-
mJ
RCC'+EE'
Internal lead resistance
Main terminals -chip, per switch, T C =25 °C
-
-
0.9
mΩ
rg
Internal gate resistance
Per switch
-
6.5
-
Ω
Publication Date : February 2015
CMH-10486
Ver.1.5
2
<IGBT Modules>
CM300DY-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
THERMAL RESISTANCE CHARACTERISTICS
Symbol
Rt h(j -c)Q
Item
Junction to case, per IGBT
Thermal resistance
Rt h(j -c)D
Rt h(c-s)
Limits
Conditions
Min.
(Note4)
Junction to case, per DIODE
(Note4)
Case to heat sink, per 1/2 module,
Contact thermal resistance
Thermal grease applied
(Note4, 6)
Typ.
Max.
Unit
-
-
66
K/kW
-
-
120
K/kW
-
20
-
K/kW
MECHANICAL CHARACTERISTICS
Symbol
Mt
Item
Mounting torque
Ms
Typ.
Max.
Unit
Main terminals
M 6 screw
3.5
4.0
4.5
N·m
M 6 screw
3.5
4.0
4.5
N·m
-
400
-
g
-50
-
+100
μm
mass
-
ec
Flatness of base plate
On the centerline X, Y
(Note7)
-: Concave
This product is compliant with the Restriction of the Use of Certain Hazardous Substances in Electrical and Electronic Equipment
(RoHS) directive 2011/65/EU.
Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (DIODE).
Junction temperature (T j ) should not increase beyond T j m a x rating.
Pulse width and repetition rate should be such that the device junction temperature (T j ) dose not exceed T j m a x rating.
temperature (TC) and heat sink temperature (T s ) are defined on the each surface (mounting side) of base plate and heat sink just under
the chips. Refer to the figure of chip location.
The heat sink thermal resistance should measure just under the chips.
Pulse width and repetition rate should be such as to cause negligible temperature rise. Refer to the figure of test circuit.
Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).
Base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure.
+: Convex
5.
6.
7.
Min.
Mounting to heat sink
m
Note1.
2.
3.
4.
Limits
Conditions
X
Mounting side
3 mm
Y
Mounting side
-: Concave
Mounting side
+: Convex
RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
Item
(DC) Supply voltage
Conditions
Applied across C1-E2
VGEon
Gate (-emitter drive) voltage
Applied across G1-Es1/G2-Es2
RG
External gate resistance
Per switch
Publication Date : February 2015
CMH-10486
Ver.1.5
3
Limits
Unit
Min.
Typ.
Max.
-
600
850
13.5
15.0
16.5
V
0
-
15
Ω
V
<IGBT Modules>
CM300DY-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
CHIP LOCATION (Top view)
Dimension in mm, tolerance: ±1 mm
Tr1/Tr2: IGBT, Di1/Di2: DIODE
TEST CIRCUIT
C1
C1
VGE=15 V
V
G-E shortcircuited
G1
IC
G1
V
Tr1
Di1
Di2
VEC test circuit
4
E2
Es2
E2
Es2
Tr2
IE
G2
G2
V C E s a t test circuit
Publication Date : February 2015
CMH-10486
Ver.1.5
G-E shortcircuited
E2
Es2
E2
Es2
C2E1
C2E1
IC
G2
V
Es1
Es1
G-E shortcircuited
VGE=15 V
G2
G1
V
C2E1
C2E1
G-E shortcircuited
IE
G-E shortcircuited
G1
Es1
Es1
C1
C1
G-E shortcircuited
<IGBT Modules>
CM300DY-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
TEST CIRCUIT AND WAVEFORMS
～
～
iE
C1
vGE
90 %
0V
IE
+
C2E1
iC
VCC
t
90 %
RG
0
0A
Irr
vCE
vGE
-VGE
G2
0.5×I r r
10%
iC
0A
tr
Es2
td(on)
E2
tf
td(off)
t
Switching characteristics test circuit and waveforms
t r r , Q r r test waveform
iE
iC
iC
ICM
vCE
trr
～
～
Es1
+VGE
Q r r =0.5×I r r ×t r r
t
Load
G1
-VGE
iE
0
VCC
IEM
vEC
ICM
VCC
vCE
VCC
t
0A
0.1×ICM
0.1×VCC
0
0.1×VCC
t
0.02×ICM
0
ti
ti
IGBT Turn-on switching energy
IGBT Turn-off switching energy
t
0V
t
ti
DIODE Reverse recovery energy
Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing)
Publication Date : February 2015
CMH-10486
Ver.1.5
5
<IGBT Modules>
CM300DY-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
T j =25 °C
(Chip)
VGE=15 V
VGE=20 V
COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat
13.5 V
12 V
15 V
500
COLLECTOR CURRENT IC (A)
(V)
600
400
11 V
300
10 V
200
9V
100
0
0
2
4
6
8
COLLECTOR-EMITTER VOLTAGE
10
VCE
T j =125 °C
3
T j =150 °C
2.5
2
T j =25 °C
1.5
1
0.5
0
0
100
(V)
300
400
500
600
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
(Chip)
G-E short-circuited
10
(Chip)
1000
8
IC=600 A
EMITTER CURRENT IE (A)
(V)
COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat
200
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
T j =25 °C
(Chip)
3.5
IC=300 A
6
IC=120 A
4
T j =150 °C
T j =125 °C
100
T j =25 °C
2
0
10
6
8
10
12
14
16
18
20
0
GATE-EMITTER VOLTAGE VGE (V)
Publication Date : February 2015
CMH-10486
Ver.1.5
0.5
1
1.5
2
EMITTER-COLLECTOR VOLTAGE
6
2.5
VEC (V)
3
<IGBT Modules>
CM300DY-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD
---------------: T j =150 °C, - - - - -: T j =125 °C
VCC=600 V, IC=300 A, VGE=±15 V, INDUCTIVE LOAD
---------------: T j =150 °C, - - - - -: T j =125 °C
1000
1000
10000
td(off)
td(off), tf
tr
td(on), tr
SWITCHING TIME
tf
100
SWITCHING TIME
100
tr
1000
td(off)
tf
10
10
10
100
1000
0.1
1
COLLECTOR CURRENT IC (A)
100
100
10
EXTERNAL GATE RESISTANCE
RG
(Ω)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=600 V, VGE=±15 V, RG=0 Ω,
INDUCTIVE LOAD, PER PULSE
---------------: T j =150 °C, - - - - -: T j =125 °C
VCC=600 V, IC/IE=300 A, VGE=±15 V,
INDUCTIVE LOAD, PER PULSE
---------------: T j =150 °C, - - - - -: T j =125 °C
100
SWITCHING TIME
(ns)
td(on)
(ns)
(ns)
td(on)
100
SWITCHING ENERGY (mJ)
Err
10
E off
Eon
1
REVERSE RECOVERY ENERGY (mJ)
SWITCHING ENERGY (mJ)
REVERSE RECOVERY ENERGY (mJ)
Eon
E off
Err
10
1
10
100
1000
0.01
COLLECTOR CURRENT IC (A)
EMITTER CURRENT IE (A)
Publication Date : February 2015
CMH-10486
Ver.1.5
0.1
1
EXTERNAL GATE RESISTANCE
7
10
RG
100
(Ω)
<IGBT Modules>
CM300DY-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
CAPACITANCE CHARACTERISTICS
(TYPICAL)
FREE WHEELING DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD
---------------: T j =150 °C, - - - - -: T j =125 °C
G-E short-circuited, T j =25 °C
1000
100
Cies
10
CAPACITANCE
(ns)
(nF)
trr
Irr
(A), t r r
Coes
100
Irr
1
Cres
0.1
0.01
10
0.1
1
10
COLLECTOR-EMITTER VOLTAGE
100
VCE
10
(V)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
(MAXIMUM)
V C C = 600 V, I C = 300 A, T j =25 °C
Single pulse, TC=25°C
R t h ( j - c )Q =66 K/kW, R t h (j - c ) D =120 K/kW
NORMALIZED TRANSIENT THERMAL IMPEDANCE Z t h ( j - c )
GATE-EMITTER VOLTAGE VGE (V)
1000
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
15
10
5
0
0
100
EMITTER CURRENT IE (A)
200
400
GATE CHARGE
600
QG
800
1000
(nC)
Publication Date : February 2015
CMH-10486
Ver.1.5
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
TIME
8
(S)
0.1
1
10
<IGBT Modules>
CM300DY-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
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Publication Date : February 2015
CMH-10486
Ver.1.5
9