< IGBT MODULES >
CM600DXL-34SA
HIGH POWER SWITCHING USE
INSULATED TYPE
Collector current I C .............….......................…
600A
Collector-emitter voltage V CES ......................… 1 7 0 0 V
Maximum junction temperature T j m a x ..............
1 7 5 °C
●Flat base Type
●Copper base plate (non-plating)
●Tin plating pin terminals
●RoHS Directive compliance
Dual switch (Half-Bridge)
●Recognized under UL1557, File E323585
APPLICATION
Wind power, AC Motor Control, Motion/Servo Control, Power supply, etc.
OUTLINE DRAWING & INTERNAL CONNECTION
Dimension in mm
SECTION A
DETAIL B
INTERNAL CONNECTION
Tolerance otherwise specified
Division of Dimension
Es1 G1
(18) (17)
Tolerance
0.5
to
3
±0.2
over
3
to
6
±0.3
over
6
to
30
±0.5
over 30
to 120
±0.8
over 120
to 400
±1.2
C1
(1)
TH2
(16)
TH1 Cs1
(15) (14)
Es2 G2 Cs2
(13) (12) (11)
NC
(10)
NC
(9)
Th
NTC
C1
(2)
E2
(3)
TERMINAL
t=0.8
E2
(4)
Publication Date : June 2013
1
Tr1
Di1
Tr2
C2E1
(8)
Di2
C2E1
(7)
NC NC
(5) (6)
< IGBT MODULES >
CM600DXL-34SA
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS (T j =25 °C, unless otherwise specified)
INVERTER PART IGBT/DIODE
Symbol
Item
V CES
Collector-emitter voltage
V GES
Gate-emitter voltage
IC
P tot
(Note1)
I ERM
(Note1)
Unit
1700
V
C-E short-circuited
± 20
V
(Note2, 4)
T C =25 °C
600
(Note3)
Pulse, Repetitive
Total power dissipation
IE
Conditions
DC, T C =125 °C
Collector current
I CRM
Rating
G-E short-circuited
(Note2, 4)
5760
(Note2)
Emitter current
A
1200
W
600
Pulse, Repetitive
(Note3)
A
1200
MODULE
Rating
Unit
V isol
Symbol
Isolation voltage
Item
Terminals to base plate, RMS, f=60 Hz, AC 1 min
Conditions
4000
V
T jmax
Maximum junction temperature
Instantaneous event (overload)
175
T Cmax
Maximum case temperature
(Note4)
125
T jop
Operating junction temperature
Continuous operation (under switching)
-40 ~ +150
T stg
Storage temperature
-
-40 ~ +125
°C
°C
ELECTRICAL CHARACTERISTICS (T j =25 °C, unless otherwise specified)
INVERTER PART IGBT/DIODE
Symbol
Item
Limits
Conditions
Min.
Typ.
Max.
Unit
I CES
Collector-emitter cut-off current
V CE =V CES , G-E short-circuited
-
-
1.0
mA
I GES
Gate-emitter leakage current
V GE =V GES , C-E short-circuited
-
-
0.5
μA
V GE(th)
Gate-emitter threshold voltage
I C =60 mA, V CE =10 V
5.4
6.0
6.6
V
T j =25 °C
-
2.00
2.50
T j =125 °C
-
2.20
-
T j =150 °C
-
2.25
-
T j =25 °C
-
1.90
2.40
V GE =15 V,
T j =125 °C
-
2.10
-
(Chip)
T j =150 °C
-
2.15
-
I C =600 A
(Note5)
,
V GE =15 V,
V CEsat
C ies
C oes
Collector-emitter saturation voltage
(Terminal)
I C =600 A
Output capacitance
Reverse transfer capacitance
QG
Gate charge
t d(on)
Turn-on delay time
tr
Rise time
t d(off)
Turn-off delay time
tf
Fall time
-
-
158
V CE =10 V, G-E short-circuited
-
-
13
-
-
2.9
V CC =1000 V, I C =600 A, V GE =15 V
-
3310
-
-
-
900
-
-
150
-
-
900
V CC =1000 V, I C =600 A, V GE =±15 V,
R G =0 Ω, Inductive load
-
-
400
T j =25 °C
-
4.1
5.3
G-E short-circuited,
T j =125 °C
-
2.9
-
(Terminal)
T j =150 °C
-
2.7
-
T j =25 °C
-
4.0
5.2
G-E short-circuited,
T j =125 °C
-
2.8
-
(Chip)
T j =150 °C
I E =600 A
t rr
(Note.1)
(Note1)
Q rr
(Note1)
E on
E off
E rr
(Note1)
,
Input capacitance
C res
V EC
(Note5)
Emitter-collector voltage
I E =600 A
(Note5)
(Note5)
,
,
V
V
nF
nC
ns
V
V
-
2.6
-
Reverse recovery time
V CC =1000 V, I E =600 A, V GE =±15 V,
-
-
300
ns
Reverse recovery charge
R G =0 Ω, Inductive load
-
23
-
μC
Turn-on switching energy per pulse
V CC =1000 V, I C =I E =600 A,
-
167
-
Turn-off switching energy per pulse
V GE =±15 V, R G =0 Ω, T j =150 °C,
-
168
-
Reverse recovery energy per pulse
Inductive load
-
106
-
-
-
0.6
mΩ
-
2.4
-
Ω
R CC'+EE'
Internal lead resistance
rg
Internal gate resistance
Main terminals-chip, per switch,
T C =25 °C
(Note4)
Per switch
Publication Date : June 2013
2
mJ
< IGBT MODULES >
CM600DXL-34SA
HIGH POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS (cont.; T j =25 °C, unless otherwise specified)
NTC THERMISTOR PART
Symbol
Item
Limits
Conditions
(Note4)
R 25
Zero-power resistance
T C =25 °C
∆R/R
Deviation of resistance
R 100 =493 Ω, T C =100 °C
B (25/50)
B-constant
Approximate by equation
P 25
Power dissipation
T C =25 °C
Typ.
4.85
5.00
5.15
kΩ
-7.3
-
+7.8
%
-
3375
-
K
-
-
10
mW
(Note4)
(Note6)
(Note4)
Max.
Unit
Min.
THERMAL RESISTANCE CHARACTERISTICS
Symbol
Item
R th(j-c)Q
Junction to case, per IGBT
Thermal resistance
R th(j-c)D
R th(c-s)
Limits
Conditions
Junction to case, per DIODE
Min.
Typ.
Max.
-
-
26
-
-
39
-
7
-
(Note4)
(Note4)
Case to heat sink, per 1 module,
Contact thermal resistance
Thermal grease applied
(Note4, 7)
Unit
K/kW
K/kW
MECHANICAL CHARACTERISTICS
Symbol
Item
Mt
Mounting torque
Ms
Limits
Conditions
Min.
Typ.
Max.
Main terminals
M 6 screw
3.5
4.0
4.5
Mounting to heat sink
M 5 screw
2.5
3.0
3.5
Terminal to terminal
22.5
-
-
16.8
-
-
Terminal to terminal
15.5
-
-
Terminal to base plate
11.3
-
-
-
690
-
g
±0
-
+100
μm
Creepage distance
da
Clearance
m
mass
-
ec
Flatness of base plate
On the centerline X, Y
(Note8)
Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (DIODE).
2. Junction temperature (T j ) should not increase beyond T j m a x rating.
3. Pulse width and repetition rate should be such that the device junction temperature (T j ) dose not exceed T j m a x rating.
4. Case temperature (T C ) and heat sink temperature (T s ) are defined on the each surface (mounting side) of base plate and heat sink
just under the chips. Refer to the figure of chip location.
5. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Refer to the figure of test circuit.
R
1
1

),
6. B ( 25 / 50)  ln( 25 ) /(
R 50 T25 T50
-: Concave
+: Convex
R 25 : resistance at absolute temperature T 25 [K]; T 25 =25 [°C]+273.15=298.15 [K]
R 50 : resistance at absolute temperature T 50 [K]; T 50 =50 [°C]+273.15=323.15 [K]
7. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).
8. The base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure.
X
Y
mounting side
-: Concave
Label side
mounting side
N·m
Terminal to base plate
ds
mounting side
Unit
+: Convex
9. Use the following screws when mounting the printed circuit board (PCB) on the stand offs.
"φ2.6×10 or φ2.6×12 self tapping screw"
The length of the screw depends on the thickness (t1.6~t2.0) of the PCB.
Publication Date : June 2013
3
mm
mm
< IGBT MODULES >
CM600DXL-34SA
HIGH POWER SWITCHING USE
INSULATED TYPE
RECOMMENDED OPERATING CONDITIONS
Symbol
Item
Conditions
V CC
(DC) Supply voltage
Applied across C1-E2
V GEon
Gate (-emitter drive) voltage
Applied across G1-Es1/G2-Es2
RG
External gate resistance
Per switch
CHIP LOCATION (Top view)
Limits
Min.
Typ.
Max.
Unit
-
1000
1200
V
13.5
15.0
16.5
V
0
-
13
Ω
Dimension in mm, tolerance: ±1 mm
Tr1/Tr2: IGBT, Di1/Di2: DIODE, Th: NTC thermistor
Publication Date : June 2013
4
< IGBT MODULES >
CM600DXL-34SA
HIGH POWER SWITCHING USE
INSULATED TYPE
TEST CIRCUIT
1/2
C1
14
Shortcircuite d
VGE=15V
IC
17
V
Shortcircuite d
G1
18
V
Es1
VGE=15V
IC
G2
3/4
13
Es1
18
V
Cs2
7/8
Shortcircuite d
G2
E2
Es2
Tr1
Shortcircuite d
11
IE
12
E2
Es2
Tr2
14
17
C2E1
Cs2
12
Shortcircuite d
IE
C2E1
11
1/2
Cs1
G1
V
7/8
Shortcircuite d
C1
Cs1
3/4
13
Di1
Di2
V C E s a t test circuit
V EC test circuit
iE
vGE
C1
Cs1
～
～
TEST CIRCUIT AND WAVEFORMS
90 %
0V
G1
-VGE
IE
Es 1
V CC
iC
～
+
Cs2
+V GE
G2
vGE
-V GE
iC
Es 2
0A
tr
td ( o n )
tf
td ( o ff )
t
t r r , Q r r test waveform
iE
iC
iC
ICM
VCC
0.1×ICM
0.1×VCC
ICM
VCC
t
0.5×I r r
10%
Switching test circuit and waveforms
0
t
Irr
E2
vCE
trr
0A
90 %
vCE
0V
Q r r =0.5×I r r ×t r r
t
Load
C2E1
RG
iE
0
0
0.1×VCC
IEM
vEC
vCE
0.02×ICM
ti
ti
IGBT Turn-on switching energy
IGBT Turn-off switching energy
t
VCC
0A
t
0V
t
ti
DIODE Reverse recovery energy
Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing)
Publication Date : June 2013
5
< IGBT MODULES >
CM600DXL-34SA
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
INVERTER PART
COLLECTOR-EMITTER SATURATION VOLTAGE
CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
T j =25 °C
V GE =15 V
(Chip)
1200
15 V
V GE =20 V
4
11 V
COLLECTOR-EMITTER
SATURATION VOLTAGE V CEsat (V)
I C (A)
1000
COLLECTOR CURRENT
(Chip)
4.5
800
10 V
600
400
9V
200
8V
3.5
T j =150 °C
3
2.5
2
T j =125 °C
1.5
T j =25 °C
1
0.5
0
0
0
2
4
6
COLLECTOR-EMITTER VOLTAGE
8
0
10
200
V CE (V)
400
600
800
COLLECTOR CURRENT
1000
1200
I C (A)
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
G-E short-circuited
(Chip)
EMITTER CURRENT
I E (A)
10000
T j =125 °C
T j =150 °C
1000
T j =25 °C
100
0
1
2
3
4
EMITTER-COLLECTOR VOLTAGE
Publication Date : June 2013
6
5
V EC (V)
6
< IGBT MODULES >
CM600DXL-34SA
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
INVERTER PART
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
V CC =1000 V, V GE =±15 V, R G =0 Ω, INDUCTIVE LOAD
---------------: T j =150 °C, - - - - -: T j =125 °C
V CC =1000 V, V GE =±15 V, I C =600 A, INDUCTIVE LOAD
---------------: T j =150 °C, - - - - -: T j =125 °C
10000
10000
1000
SWITCHING TIME (ns)
SWITCHING TIME (ns)
t d(off)
t d(on)
tf
100
t d(on)
t d(off)
1000
tr
tf
tr
10
100
10
100
COLLECTOR CURRENT
1000
0
I C (A)
10
15
R G (Ω)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
V CC =1000 V, V GE =±15 V, I C =600 A,
INDUCTIVE LOAD, PER PULSE
---------------: T j =150 °C, - - - - -: T j =125 °C
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
V CC =1000 V, V GE =±15 V, R G =0 Ω,
INDUCTIVE LOAD, PER PULSE
---------------: T j =150 °C, - - - - -: T j =125 °C
10000
5
EXTERNAL GATE RESISTANCE
1000
1000
100
E rr
100
10
E off
SWITCHING ENERGY (mJ)
REVERSE RECOVERY ENERGY (mJ)
1000
REVERSE RECOVERY ENERGY (mJ)
SWITCHING ENERGY (mJ)
E on
E off
100
E rr
E on
10
10
100
10
1
1000
0
5
10
EXTERNAL GATE RESISTANCE
COLLECTOR CURRENT I C (A)
EMITTER CURRENT I E (A)
Publication Date : June 2013
7
15
R G (Ω)
< IGBT MODULES >
CM600DXL-34SA
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
INVERTER PART
(TYPICAL)
FREE WHEELING DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
G-E short-circuited, T j =25 °C
V CC =1000 V, V GE =±15 V, R G =0 Ω, INDUCTIVE LOAD
---------------: T j =150 °C, - - - - -: T j =125 °C
CAPACITANCE CHARACTERISTICS
1000
1000
C ies
t rr
100
t r r (ns), I r r (A)
CAPACITANCE (nF)
I rr
10
C oes
100
C res
1
10
10
0.1
0.1
1
10
COLLECTOR-EMITTER VOLTAGE
V CE (V)
EMITTER CURRENT
GATE CHARGE CHARACTERISTICS
I E (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
(MAXIMUM)
V CC =1000 V, I C =600 A, T j =25 °C
Single pulse, T C =25 °C
R t h ( j - c ) Q =26 K/kW, R t h ( j - c ) D =39 K/kW
1
NORMALIZED TRANSIENT THERMAL RESISTANCE
Z th(j-c)
V GE (V)
1000
(TYPICAL)
20
GATE-EMITTER VOLTAGE
100
100
15
10
5
1000
2000
GATE CHARGE
3000
4000
0.01
0.001
0.00001
0
0
0.1
5000
Q G (nC)
0.0001
0.001
0.01
TIME (S)
Publication Date : June 2013
8
0.1
1
10
< IGBT MODULES >
CM600DXL-34SA
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
NTC thermistor part
TEMPERATURE CHARACTERISTICS
(TYPICAL)
RESISTANCE
R (kΩ)
100
10
1
0.1
-50
-25
0
25
50
TEMPERATURE
75
100
125
T (°C)
Publication Date : June 2013
9
< IGBT MODULES >
CM600DXL-34SA
HIGH POWER SWITCHING USE
INSULATED TYPE
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
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Publication Date : June 2013
10