< IGBT MODULES >
CM900DUC-24NF
HIGH POWER SWITCHING USE
INSULATED TYPE
Collector current IC .............…..........................…
900A
No
t
fo
R
r N ec
ew om
m
De e
sig nd
n
Collector-emitter voltage VCES ..........................… 1 2 0 0 V
Maximum junction temperature T j m a x ....................
1 5 0 °C
●Flat base Type
●Copper base plate (non-plating)
●RoHS Directive compliant
●Recognized under UL1557, File E323585
Dual switch (Half-Bridge)
APPLICATION
Wind power, Photovoltaic (Solar) power, AC Motor Control, Motion/Servo Control, Power supply, etc.
OUTLINE DRAWING & INTERNAL CONNECTION
Dimension in mm
INTERNAL CONNECTION
Tolerance otherwise specified
C2E1
C2
(Cs2)
G2
Di2
Tr2
E2
(Es2) E2
Publication Date : February 2014
C1
(Cs1)
Di1
Tr1
E1
(Es1)
G1
C1
1
Division of Dimension
0.5
to
over
3
over
6
over
Tolerance
3
±0.2
to
6
±0.3
to
30
±0.5
30
to 120
±0.8
over 120
to 400
±1.2
< IGBT MODULES >
CM900DUC-24NF
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified)
Rating
Unit
VCES
Symbol
Collector-emitter voltage
G-E short-circuited
1200
V
VGES
Gate-emitter voltage
C-E short-circuited
± 20
V
IC
Item
DC, TC=96 °C
Collector current
ICRM
(Note2, 4)
Pulse, Repetitive
Total power dissipation
TC=25 °C
900
(Note3)
IE
(Note1)
IERM
(Note1)
DC
Emitter current
A
1800
(Note2, 4)
5950
No
t
fo
R
r N ec
ew om
m
De e
sig nd
n
Pt ot
Conditions
(Note2)
W
900
Pulse, Repetitive
(Note3)
A
1800
Visol
Isolation voltage
Terminals to base plate, RMS, f=60 Hz, AC 1 min
Tj
Junction temperature
-
-40 ~ +150
2500
V
Tst g
Storage temperature
(Note7)
-40 ~ +125
°C
ELECTRICAL CHARACTERISTICS (T j =25 °C, unless otherwise specified)
Symbol
Item
Limits
Conditions
Min.
Typ.
Max.
Unit
ICES
Collector-emitter cut-off current
VCE=VCES, G-E short-circuited
-
-
1.0
mA
IGES
Gate-emitter leakage current
VGE=VGES, C-E short-circuited
-
-
1.0
μA
V G E (t h )
Gate-emitter threshold voltage
IC=90 mA, VCE=10 V
6
7
8
V
T j =25 °C
-
1.8
2.5
T j =125 °C
-
2.0
-
-
-
140
-
-
16
-
-
3.0
-
4800
-
-
-
600
-
-
200
-
-
800
-
-
300
T j =25 °C
-
2.5
3.2
T j =125 °C
-
2.1
-
V C E sa t
Collector-emitter saturation voltage
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer capacitance
QG
Gate charge
td(on)
Turn-on delay time
tr
Rise time
td(off)
Turn-off delay time
tf
Fall time
VEC (Note.1)
Emitter-collector voltage
IC=900 A, VGE=15 V
(Note5)
Refer to the figure of test circuit
VCE=10 V, G-E short-circuited
VCC=600 V, IC=900 A, VGE=15 V
VCC=600 V, IC=900 A, VGE=±15 V,
RG=0.35 Ω, Inductive load
IE=900 A, G-E short-circuited,
Refer to the figure of test circuit
(Note5)
V
nF
nC
ns
V
trr
(Note1)
Reverse recovery time
VCC=600 V, IE=900 A, VGE=±15 V,
-
-
500
ns
Qrr
(Note1)
Reverse recovery charge
RG=0.35 Ω, Inductive load
-
50
-
μC
Eon
Turn-on switching energy per pulse
VCC=600 V, IC=IE=900 A,
-
147.5
-
E of f
Turn-off switching energy per pulse
VGE=±15 V, RG=0.35 Ω, T j =125 °C,
-
88
-
Reverse recovery energy per pulse
Inductive load
-
91.8
-
mJ
-
0.286
-
mΩ
-
1.0
-
Ω
Err
(Note1)
R CC'+EE'
Internal lead resistance
rg
Internal gate resistance
Publication Date : February 2014
Main terminals-chip, per switch,
TC=25 °C
(Note4)
Per switch
2
mJ
< IGBT MODULES >
CM900DUC-24NF
HIGH POWER SWITCHING USE
INSULATED TYPE
THERMAL RESISTANCE CHARACTERISTICS
Symbol
Rt h(j -c)Q
Item
Junction to case, per Inverter DIODE
(Note4)
Case to heat sink, per 1/2 module,
Contact thermal resistance
Thermal grease applied
(Note4, 6)
Min.
Typ.
Max.
-
-
21
-
-
34
-
12
-
No
t
fo
R
r N ec
ew om
m
De e
sig nd
n
Rt h(c-s)
(Note4)
Junction to case, per Inverter IGBT
Thermal resistance
Rt h(j -c)D
Limits
Conditions
Unit
K/kW
K/kW
MECHANICAL CHARACTERISTICS
Symbol
Mt
Item
Mounting torque
Ms
Limits
Conditions
Min.
Typ.
Max.
Unit
Main terminals
M 6 screw
3.5
4.0
4.5
N·m
Mounting to heat sink
M 6 screw
3.5
4.0
4.5
N·m
Terminal to terminal
24
-
-
Terminal to base plate
33
-
-
Terminal to terminal
14
-
-
Terminal to base plate
33
-
-
-
1450
-
g
-50
-
+100
μm
ds
Creepage distance
da
Clearance
m
mass
-
ec
Flatness of base plate
On the centerline X, Y1, Y2
(Note8)
mm
mm
Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (DIODE).
2. Junction temperature (T j ) should not increase beyond T j m a x rating.
3. Pulse width and repetition rate should be such that the device junction temperature (T j ) dose not exceed T j m a x rating.
4. Case temperature (TC) and heat sink temperature (T s ) are defined on the each surface (mounting side) of base plate and heat sink just under
the chips. Refer to the figure of chip location.
The heat sink thermal resistance should measure just under the chips.
5. Pulse width and repetition rate should be such as to cause negligible temperature rise. Refer to the figure of test circuit.
6. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).
7: The operation temperature is restrained by the permission temperature of female connector housing.
8. Base plate (mounting side) flatness measurement points (X, Y1 and Y2) are as follows of the following figure.
39 mm
39 mm
Y2
-: 凹
+: 凸
Y1
X
mounting
side
mounting
side
-: 凹
Label side
mounting side
+: 凸
9. The company name and product names herein are the trademarks and registered trademarks of the respective companies.
Publication Date : February 2014
3
< IGBT MODULES >
CM900DUC-24NF
HIGH POWER SWITCHING USE
INSULATED TYPE
RECOMMENDED OPERATING CONDITIONS
Symbol
Item
Conditions
Limits
Min.
Typ.
Max.
Unit
(DC) Supply voltage
Applied across C1-E2 terminals
-
600
800
V
VGEon
Gate (-emitter drive) voltage
Applied across G1-Es1/G2-Es2 terminals
13.5
15.0
16.5
V
RG
External gate resistance
Per switch
0.35
-
2.2
Ω
No
t
fo
R
r N ec
ew om
m
De e
sig nd
n
VCC
CHIP LOCATION (Top view)
Dimension in mm, tolerance: ±1 mm
Tr1/Tr2: IGBT, Di1/Di2: DIODE
Publication Date : February 2014
4
< IGBT MODULES >
CM900DUC-24NF
HIGH POWER SWITCHING USE
INSULATED TYPE
TEST CIRCUIT AND WAVEFORMS
vGE
Cs1
90 %
0V
iE
0
Q r r =0.5×I r r ×t r r
t
Load
G1
-VGE
～
～
iE
C1
IE
+
iC
VCC
trr
No
t
fo
R
r N ec
ew om
m
De e
sig nd
n
C2E1
～
～
Es1
90 %
vCE
Cs2
Irr
RG
+VGE
0
vGE
-VGE
G2
0A
tr
td(on)
E2
tf
td(off)
t
Switching characteristics test circuit and waveforms
t r r , Q r r test waveform
IEM
iE
iC
iC
ICM
VCC
0.1×ICM
VCC
vCE
0.1×VCC
0.02×ICM
0
t
vEC
ICM
VCC
0.1×VCC
0
0.5×I r r
10%
iC
Es2
vCE
t
0A
ti
ti
IGBT Turn-on switching energy
IGBT Turn-off switching energy
t
0A
t
0V
t
ti
DIODE Reverse recovery energy
Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing)
TEST CIRCUIT
C1
Shortcircuited
VGE=15V
IC
G1
V
Cs1
Shortcircuited
Es1
V
V
Cs2
Shortcircuited
IC
G1
E2
Tr2
Cs2
V
Shortcircuited
C2E1
Cs2
IE
G2
E2
E2
Es2
Di1
VEC test circuit
5
C1
Cs1
Es1
Es2
V C E s a t test circuit
Publication Date : February 2014
Es1
G2
E2
Es2
Tr1
Shortcircuited
G1
C1E2
VGE=15V
Es2
IE
C2E1
Cs2
G2
Cs1
G1
G1
Es1
C2E1
Shortcircuited
C1
C1
Cs1
Di2
< IGBT MODULES >
CM900DUC-24NF
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
T j =25 °C
VGE=15 V
(Chip)
1800
(Chip)
4
13.5 V
No
t
fo
R
r N ec
ew om
m
De e
sig nd
n
VGE=20 V
1600
IC (A)
COLLECTOR CURRENT
COLLECTOR-EMITTER
SATURATION VOLTAGE VCEsat (V)
12 V
15 V
1400
1200
1000
11 V
800
600
10 V
400
200
3
T j =125 °C
2
T j =25 °C
1
9V
0
0
0
2
4
6
8
COLLECTOR-EMITTER VOLTAGE
10
0
200
VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
T j =25 °C
600
800
1000
1200
1400
1600
1800
IC (A)
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
G-E short-circuited
(Chip)
10
(Chip)
10000
IE (A)
IC=1800 A
8
IC=900 A
T j =125 °C
6
EMITTER CURRENT
COLLECTOR-EMITTER
SATURATION VOLTAGE VCEsat (V)
400
COLLECTOR CURRENT
IC=360 A
4
1000
T j =25 °C
2
0
100
6
8
10
12
14
GATE-EMITTER VOLTAGE
Publication Date : February 2014
16
18
0.5
20
VGE (V)
1
1.5
2
2.5
3
EMITTER-COLLECTOR VOLTAGE
6
3.5
VEC (V)
4
< IGBT MODULES >
CM900DUC-24NF
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=600 V, VGE=±15 V, RG=0.35 Ω, T j =125 °C,
INDUCTIVE LOAD
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=600 V, IC=900 A, VGE=±15 V, T j =125 °C,
INDUCTIVE LOAD
1000
1000
No
t
fo
R
r N ec
ew om
m
De e
sig nd
n
td(off)
td(off)
tf
td(on)
td(on)
SWITCHING TIME
SWITCHING TIME
(ns)
(ns)
tr
100
tr
10
tf
100
10
10
100
COLLECTOR CURRENT
1000
0.1
IC (A)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=600 V, VGE=±15 V, RG=0.35 Ω, T j =125 °C,
INDUCTIVE LOAD, PER PULSE
10
Eon
10
100
Eon
SWITCHING ENERGY (mJ)
REVERSE RECOVERY ENERGY (mJ)
E off
10
1
1000
100
E off
Err
10
0.1
COLLECTOR CURRENT IC (A)
EMITTER CURRENT IE (A)
Publication Date : February 2014
10
(Ω)
1000
TURN-OFF SWITCHING ENERGY Eoff (mJ)
REVERSE RECOVERY ENERGY (mJ)
TURN-ON SWITCHING ENERGY Eon
Err
100
RG
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=600 V, IC/IE=900 A, VGE=±15 V, T j =125 °C,
INDUCTIVE LOAD, PER PULSE
100
(mJ)
1000
1
EXTERNAL GATE RESISTANCE
1
EXTERNAL GATE RESISTANCE
7
10
RG
(Ω)
< IGBT MODULES >
CM900DUC-24NF
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
FREE WHEELING DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
VCC=600 V, VGE=±15 V, RG=0.35 Ω, T j =25 °C,
INDUCTIVE LOAD
CAPACITANCE CHARACTERISTICS
(TYPICAL)
G-E short-circuited, T j =25 °C
1000
No
t
fo
R
r N ec
ew om
m
De e
sig nd
n
1000
Cies
Irr
100
10
(ns), I r r
CAPACITANCE
(A)
(nF)
trr
100
trr
Coes
Cres
1
0.1
10
0.1
1
10
100
COLLECTOR-EMITTER VOLTAGE
10
VCE (V)
IC=900 A, T j =25 °C
NORMALIZED TRANSIENT THERMAL IMPEDANCE Z t h ( j - c )
20
18
GATE-EMITTER VOLTAGE VGE (V)
VCC=400 V
16
VCC=600 V
12
10
8
6
4
2
0
0
1000
2000
3000
GATE CHARGE
4000
QG
Publication Date : February 2014
5000
6000
1000
IE (A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
(MAXIMUM)
Single pulse, TC=25°C
R t h ( j - c )Q =21 K/kW, R t h (j - c ) D =34 K/kW
GATE CHARGE CHARACTERISTICS
(TYPICAL)
14
100
EMITTER CURRENT
7000
(nC)
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
TIME
8
(S)
0.1
1
10
< IGBT MODULES >
CM900DUC-24NF
HIGH POWER SWITCHING USE
INSULATED TYPE
Keep safety first in your circuit designs!
No
t
fo
R
r N ec
ew om
m
De e
sig nd
n
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury, fire or property damage. Remember to give due consideration to safety when
making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
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© 2013-2014 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date : February 2014
9