PD -50066A
GA200SA60U
Ultra-FastTM Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
• UltraFast: Optimized for minimum saturation voltage
and operating frequencies up to 40 kHz in hard
switching, > 200 kHz in resonant mode
• Very low conduction and switching losses
• Fully isolate package ( 2,500 Volt AC/RMS)
• Very low internal inductance ( ≤ 5 nH typ.)
• Industry standard outline
VCES = 600V
VCE(on) typ. = 1.60V
G
@VGE = 15V, IC = 100A
E
n-channel
Benefits
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, Welding, Induction heating
• Lower overall losses available at frequencies ≥ 20kHz
• Easy to assemble and parallel
• Direct mounting to heatsink
• Lower EMI, requires less snubbing
• Plug-in compatible with other SOT-227 packages
S O T -2 2 7
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
VISOL
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load CurrentR
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
RMS Isolation Voltage, Any Terminal to Case, t=1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction
Storage Temperature Range
Mounting Torque, 6-32 or M3 Screw
Max.
Units
600
200
100
400
400
± 20
160
2500
500
200
-55 to + 150
-55 to + 150
12 lbf •in(1.3N•m)
V
A
V
mJ
V
W
°C
Thermal Resistance
Parameter
RθJC
RθCS
Wt
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Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Weight of Module
Typ.
Max.
–––
0.05
30
0.25
–––
–––
Units
°C/W
gm
1
4/24/2000
GA200SA60U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)ECS
DV(BR)CES/DTJ
VCE(ON)
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
IGES
Parameter
Min. Typ. Max. Units
Conditions
Collector-to-Emitter Breakdown Voltage
600
—
—
V
VGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage T 18
—
—
V
VGE = 0V, IC = 1.0A
Temperature Coeff. of Breakdown Voltage — 0.38 —
V/°C VGE = 0V, IC = 10 mA
— 1.60 1.9
IC = 100A
VGE = 15V
Collector-to-Emitter Saturation Voltage
— 1.92 —
IC = 200A
See Fig.2, 5
V
— 1.54 —
IC = 100A , TJ = 150°C
Gate Threshold Voltage
3.0
—
6.0
VCE = VGE, IC = 250µA
Temperature Coeff. of Threshold Voltage
—
-11
— mV/°C VCE = VGE, IC = 2.0 mA
Forward Transconductance U
79
—
S
VCE = 100V, IC = 100A
—
—
1.0
VGE = 0V, VCE = 600V
mA
Zero Gate Voltage Collector Current
—
—
10
VGE = 0V, VCE = 600V, TJ = 150°C
Gate-to-Emitter Leakage Current
—
— ±250
nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
770
100
260
54
79
130
300
0.98
3.48
4.46
56
75
160
460
7.24
5.0
16500
1000
200
Max. Units
Conditions
1200
IC = 100A
150
nC VCC = 400V
See Fig. 8
380
VGE = 15V
—
—
TJ = 25°C
ns
200
IC = 100A, VCC = 480V
450
VGE = 15V, RG = 2.0Ω
—
Energy losses include "tail"
—
mJ See Fig. 9, 10, 14
7.6
—
TJ = 150°C,
—
IC = 100A, VCC = 480V
ns
—
VGE = 15V, RG = 2.0Ω
—
Energy losses include "tail"
—
mJ See Fig. 10, 11, 14
—
nH Measured 5mm from package
—
VGE = 0V
—
pF
VCC = 30V
See Fig. 7
—
ƒ = 1.0MHz
Notes:
Q Repetitive rating; VGE = 20V, pulse width limited by
T Pulse width ≤ 80µs; duty factor ≤ 0.1%.
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 2.0Ω,
(See fig. 13a)
U Pulse width 5.0µs, single shot.
S Repetitive rating; pulse width limited by maximum
junction temperature.
2
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GA200SA60U
200
For both:
160
Load Current ( A )
Triangular wave:
Duty cycle: 50%
T J = 125°C
T sink= 90°C
Gate drive as specified
Power Dissipation = 140W
Clamp voltage:
80% of rated
120
Square wave:
60% of rated
voltage
80
40
Ideal diodes
A
0
0.1
1
10
100
f, Fre quen cy (kH z)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
100
I C , Collector-to-Emitter Current (A)
I C , Collector-to-Emitter Current (A)
1000
TJ = 150 °C
TJ = 25 °C
100
TJ = 150 °C
TJ = 25 °C
V
= 15V
20µs PULSE WIDTH
GE
10
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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10
5.0
V
= 25V
20µs PULSE WIDTH
CE
5µs PULSE WIDTH
6.0
7.0
8.0
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
GA200SA60U
3.0
V
= 15V
80 us PULSE WIDTH
IC = 400 A
GE
VCE , Collector-to-Emitter Voltage(V)
Maximum DC Collector Current(A)
200
150
100
50
0
25
50
75
100
125
150
IC = 200 A
2.0
IC = 100 A
1.0
-60 -40 -20
°
TC , Case Temperature ( C)
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( ° C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Thermal Response (Z thJC )
1
D = 0.50
0.1
0.01
0.001
0.00001
0.20
0.10
0.05
0.02
0.01
P DM
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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GA200SA60U
25000
C, Capacitance (pF)
VGE = 0V,
f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
20000
15000
Coes
10000
Cres
5000
20
VGE , Gate-to-Emitter Voltage (V)
30000
0
1
10
12
8
4
0
100
0
Total Switching Losses (mJ)
Total Switching Losses (mJ)
100
40
30
20
10
0
20
30
40
50
RGRG, Gate
, GateResistance
Resistance (Ohm)
(Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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400
600
800
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
V CC = 480V
V GE = 15V
TJ = 25 °C
50
I C = 200A
10
200
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
0
VCC = 400V
I C = 110A
16
VCE , Collector-to-Emitter Voltage (V)
60
60
RG = Ohm
2.0 Ω
VGE = 15V
VCC = 480V
II
350AA
C
C == 400
IC = 200 A
10
IC = 100 A
1
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
GA200SA60U
1000
RG
TJ
VCC
50
VGE
Ω
= 2.0
Ohm
= 150 ° C
= 480V
= 15V
VGE = 20V
T J = 125 oC
I C , Collector Current (A)
Total Switching Losses (mJ)
60
40
100
30
20
10
SAFE OPERATING AREA
10
0
0
100
200
300
I C , Collector Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector Current
6
400
1
10
100
1000
VCE , Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
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GA200SA60U
L
D .U .T.
VC *
50V
RL =
0 - 480V
1 00 0V
480V
4 X I C@25°C
480µF
960V
Q
R
* Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax )
* Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor
w ill inc rea se to obta in ra ted Id.
Fig. 13a - Clamped Inductive
Fig. 13b - Pulsed Collector
Load Test Circuit
Current Test Circuit
IC
L
D river*
D .U .T.
VC
Fig. 14a - Switching
Loss Test Circuit
50V
1000V
Q
* Driver same type
as D.U.T., VC = 480V
R
S
Q
R
90 %
10 %
S
VC
90 %
Fig. 14b - Switching Loss
t d (o ff)
1 0%
IC 5%
Waveforms
tf
tr
t d (o n )
t=5µ s
Eon
E o ff
E ts = (E o n +E o ff )
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7
GA200SA60U
SOT-227 Package Details
Dimensions are shown in millimeters ( inches )
38 .3 0 ( 1 .5 0 8 )
37 .8 0 ( 1 .4 8 8 )
4 .4 0 (.17 3 )
4 .2 0 (.16 5 )
C H AM FE R
2 .00 ( .0 79 ) X 4 5 7
LE A D A S S IG M E N T S
E
-A 4
S
E
C
4
1
3
G
E
IG B T
2 5.7 0 ( 1.01 2 )
2 5.2 0 ( .9 92 )
6 .25 ( .2 46 )
1 2.50 ( .4 92 )
A1
-B 1
D
C
R FU L L
7 .50 ( .2 95 )
15 .0 0 ( .59 0 )
2
S G
G
E
HIGBT
EXFET
K2
3
4
1
2
3
2
K1 A2
HEXFRE D
3 0.2 0 ( 1.1 8 9 )
2 9.8 0 ( 1.1 7 3 )
4X
2 .1 0 ( .0 82 )
1 .9 0 ( .0 75 )
8 .1 0 ( .31 9 )
7 .7 0 ( .30 3 )
0.2 5 ( .0 10 ) M
2.1 0 ( .0 8 2 )
1.9 0 ( .0 7 5 )
C A M B M
12 .3 0 ( .4 84 )
11 .8 0 ( .4 64 )
-C 0 .12 ( .0 05 )
Tube
QUANTITIES PER TUBE IS 10
M4 SREW AND WASHER INCLUDED
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
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IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 4/00
8
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