Preliminary
SLP55N08T / SLF55N08T
60V N-Channel MOSFET
General Description
Features
This Power MOSFET is produced using SL semi‘s
advanced trench stripe DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as DC/DC
converters and high efficiency switching for power
management in portable and battery operated products.
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Absolute Maximum Ratings
Symbol
VDSS
ID
55A, 75V, RDS(on) = 0.016 @VGS = 10 V
Low gate charge ( typical 30nC)
High ruggedness
Fast switching
100% avalanche tested
Improved dv/dt capability
TC = 25°Cunless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
SLP55N08T
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
SLF55N08T
Units
V
55
55 *
A
30
30 *
A
200
200 *
A
75
(Note 1)
VGSS
Gate-Source Voltage
 20
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
110
mJ
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
(Note 1)
11.5
4.5
-55 to +150
mJ
V/ns
W
W/°C
°C
300
°C
dv/dt
PD
TJ, TSTG
TL
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
115
0.6
55
0.3
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RJC
Parameter
Thermal Resistance, Junction-to-Case
SLP55N08T
1.1
SLF55N08T
2.3
Units
°C/W
RCS
Thermal Resistance, Case-to-Sink Typ.
0.5
--
°C/W
RJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°C/W
SLP55N08T / SLF55N08T
Electrical Characteristics
Symbol
Preliminary
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 A
75
--
--
V
BVDSS
/
TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 A, Referenced to 25°C
--
0.08
--
V/°C
VDS = 75 V, VGS = 0 V
--
--
1
A
IDSS
Zero Gate Voltage Drain Current
--
--
100
A
IGSSF
Gate-Body Leakage Current, Forward
VGS = 20 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -20 V, VDS = 0 V
--
--
-100
nA
2.0
--
4.0
V
0.016

VDS = 60 V, TC = 125°C
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 A
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 30 A
--
0.013
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
1900
--
pF
--
300
--
pF
--
90
--
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 40 V, ID = 55 A,
RG = 10 
(Note 4, 5)
VDS = 40 V, ID = 55 A,
VGS = 10 V
(Note 4, 5)
--
10
--
ns
--
100
--
ns
--
25
--
ns
--
35
--
ns
--
30
-
nC
--
10
--
nC
--
6
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
55
A
ISM
--
--
200
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 55 A
Drain-Source Diode Forward Voltage
--
--
1.4
V
trr
Reverse Recovery Time
--
35
--
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 55 A,
dIF / dt = 100 A/s
--
35
--
nC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 250uH, IAS = 30 A, VDD = 25V, RG = 25 Starting TJ = 25°C
3. ISD  55 A, di/dt  200A/s, VDD  BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width  300s, Duty cycle  2%
5. Essentially independent of operating temperature
(Note 4)