UNISONIC TECHNOLOGIES CO., LTD
15N20
Power MOSFET
15A, 200V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 15N20 is an N-channel enhancement MOSFET using
UTC’s advanced technology to provide the customers with perfect
RDS(ON), high switching speed, high current capacity and low gate
charge.
The UTC 15N20 is universally applied in low voltage such as
automotive, high efficiency switching for DC/DC converters and DC
motor control, etc.

FEATURES
* RDS(ON)<0.28Ω @ VGS=10V
* High Switching Speed

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
15N20L-TA3-T
15N20G-TA3-T
15N20L-TN3-R
15N20G-TN3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source

Package
TO-220
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 3
QW-R502-717.D
15N20

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
RATINGS
UNIT
200
V
±30
V
Continuous
15
A
Continuous Drain Current
Pulsed
60
A
Single Pulsed Avalanche Current
15
A
Single Pulsed Avalanche Energy
340
mJ
TO-220
145
Power Dissipation
PD
W
TO-252
83
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

SYMBOL
VDSS
VGSS
ID
IDM
IAS
EAS
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case

SYMBOL
TO-220
TO-252
TO-220
TO-252
θJA
θJC
RATINGS
62.5
110
0.86
1.5
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=200V, VGS=0V
Forward
VGS=+30V, VDS=0V
Gate-Source Leakage Current
IGSS
Reverse
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=7.5A
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS
VGS=0V, VDS=25V, f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
Gate to Source Charge
QGS
VGS=10V, VDD=50V, ID=1.3A
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=30V, ID=0.5A, RG=25Ω,
VGS=10V, RL=30 Ω
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=15A, VGS=0V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
200
3
V
1
µA
+100 nA
-100 nA
5
0.18 0.28
V
Ω
610
145
42
800
200
60
pF
pF
pF
27
5.6
10
39
63
210
83
32
45
90
230
110
nC
nC
nC
ns
ns
ns
ns
15
60
1.5
A
A
V
2 of 3
QW-R502-717.D
15N20
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current, ID (µA)
300
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
250
250
Drain Current, ID (µA)

200
150
100
50
200
150
100
50
0
0
0
0.7
1.4
3.5 4.2
2.1 2.8
Gate Threshold Voltage, VTH (V)
Drain Current, ID (A)
Body-Diode Continuous Current, IS (A)
0
50
150
200 250
100
Drain-Source Breakdown Voltage, BVDSS (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 3
QW-R502-717.D