MMP9567
Preliminary Data Sheet
M-MOS Semiconductor Hong Kong Limited
40V P-Channel Enhancement-Mode MOSFET
VDS= -40V
RDS(ON), Vgs@-10V, Ids@-6.0A = 50mΩ
RDS(ON), Vgs@-4.5V, Ids@-4.0A = 80mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
SO-8
Internal Schematic Diagram
Top View
P-Channel MOSFET
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
-40
Gate-Source Voltage
VGS
±25
Continuous Drain Current
ID
-6
Pulsed Drain Current 1)
IDM
-30
o
Maximum Power Dissipation
TA = 25 C
PD
TA = 75oC
Operating Junction and Storage Temperature Range
Junction-to-Ambient Thermal Resistance (PCB mounted)
2)
Unit
V
A
2.5
W
0.02
TJ, Tstg
-55 to 150
RqJA
62.5
o
o
C
C/W
Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature
2. 1-in2
2oz Cu PCB board
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MMP9567
Preliminary Data Sheet
P-Channel Enhancement-Mode MOSFET
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
VGS = 0V, ID = -250uA
Drain-Source Breakdown Voltage
BVDSS
Drain-Source On-State Resistance
RDS(on) VGS = -10V, ID = -6A
45.0
50.0
Drain-Source On-State Resistance
RDS(on) VGS = -4.5V, ID = -4A
63.0
80.0
Gate Threshold Voltage
VGS(th)
VDS =VGS, ID = -250uA
-1.8
-3
V
Zero Gate Voltage Drain Current
IDSS
VDS = -40V, VGS = 0V
-1
uA
Gate Body Leakage
IGSS
VGS = ± 25V, VDS = 0V
± 100
nA
-40
-1
V
mW
3)
Dynamic
Qg
Total Gate Charge
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
7.49
VDS = -32V, ID = -6A
VGS = -4.5V
nC
2.70
3.98
13.76
VDD = -20V, RL= 20Ω
ID = -1A, VGEN = -10V
RG = 3.3W
3.56
ns
30.68
3.88
829.26
VDS = -25V, VGS = 0V
f = 1.0 MHz
pF
104.60
67.61
Source-Drain Diode
IS
Max. Diode Forward Current
Diode Forward Voltage
A
IS = -2.0A, VGS = 0V
VSD
-1.2
V
Note: Pulse test: pulse width <= 300us, duty cycle<= 2%
3. Guaranteed by design; not subject to production testing
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Disclaimer Notice
Notice
1. Specification of the products displayed herein are subject to change without notice. Continuous
development may necessitate changes in technical data without notice. M-MOS Semiconductor Sdn. Bhd.
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
2. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. These are stress ratings only, and functional operation of the device at these or any other
conditions beyond those indicated in the operational sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
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