FK360602EL - Panasonic Semiconductor

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Doc No. TT4-EA-14201
Revision. 5
Product Standards
MOS FET
FK360602EL
FK360602EL
Silicon N-channel MOSFET
Unit : mm
For switching circuits
2.9
0.4
 Features
0.13
3
1.4
2.4
 Low Drain-source On-state Resistance : RDS(on) typ = 1  (VGS = 4.5 V)
 Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)
1
 Marking Symbol :
1.0
GV
(0.95)(0.95)
1.9
 Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
 Absolute Maximum Ratings Ta = 25 C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current (Pulsed) *1
Total Power Dissipation*2
Channel Temperature
Storage Temperature Range
2
Symbol
VDS
VGS
ID
IDp
PD
Tch
Tstg
Rating
60
20
300
600
350
150
-55 to +150
Unit
V
V
mA
mA
mW
C
C
1.
2.
3.
Panasonic
JEITA
Code
Gate
Source
Drain
NMini3-R1-B
SC-59A
TO-236AA/SOT-23
Internal Connection
3
Note *1 Pulse test: Ensure that the channel temperature does not exceed 150 C
*2 Mounted on FR4 board (25.4mm×25.4mm×t0.8mm,Cu area >300mm2)
1
2
Pin Name
1.
2.
3.
Gate
Source
Drain
Page 1 of 5
Established : 2012-08-08
Revised
: 2013-10-10
Doc No. TT4-EA-14201
Revision. 5
Product Standards
MOS FET
FK360602EL
 Electrical Characteristics Ta = 25 C  3 C
Parameter
Drain-source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-source Leakage Current
Gate-source Threshold Voltage
Drain-source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Symbol
Conditions
ID = 250 A, VGS = 0 V
VDS = 60 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
ID = 250 A, VDS = 10 V
RDS(on)1 ID = 100 mA, VGS = 10 V
RDS(on)2 ID = 100 mA, VGS = 4.5 V
Ciss
VDS = 10 V, VGS = 0 V
Coss
f = 1 MHz
Crss
Qg
VDS = 10 V, VGS = 0 to 4.5 V
Qgs
ID = 200 mA
Qgd
VDSS
IDSS
IGSS
Vth
Min
Typ
Max
60
1
0.8
1
40
7
4.5
0.8
0.2
0.4
1
10
3
3
4
Unit
V
A
A
V

pF
nC
Note: Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring
methods for transistors.
Page 2 of 5
Established : 2012-08-08
Revised
: 2013-10-10
Doc No. TT4-EA-14201
Revision. 5
Product Standards
MOS FET
FK360602EL
Technical Data ( reference )
ISD - VSD
ID - VGS
1.E-01
1.E-02
1.E-02
Ta = 85 ºC
Drain Current ID (A)
Forward Drain Current ISD (A)
1.E-01
1.E-03
1.E-04
1.E-05
1.E-06
1.E-07
0
0.2
0.4
0.6
0.8
1
1.E-03
25 ºC
1.E-04
- 40 ºC
1.E-05
1.E-06
1.E-07
1
Body Diode Forward Voltage VSD (V)
RDS(on) - VGS
2.5
3
RDS(on) - ID
1.4
Drain source On-state Resistance
RDS(on) ()
ID = 100 mA
1.2
Ta = 85 ºC
1
25 ºC
VGS = 4.5 V
1
10 V
0.8
- 40 ºC
0.6
0.1
0
5
0
10
0.1
0.2
Drain Current ID (A)
Gate-source Voltage VGS (V)
Capacitance - VDS
Dynamic Input/Output Characteristics
10
Gate-source Voltage VGS (V)
100
Ciss
Capacitance C (pF)
2
Gate-source Voltage VGS (V)
10
Drain source On-state Resistance
RDS(on) ()
1.5
10
Coss
Crss
1
8
6
4
2
0
0.1
1
10
Drain-source Voltage VDS (V)
100
0
0.5
1
1.5
2
Total Gate Charge Qg (nC)
Page 3 of 5
Established : 2012-08-08
Revised
: 2013-10-10
Doc No. TT4-EA-14201
Revision. 5
Product Standards
MOS FET
FK360602EL
Technical Data ( reference )
Vth - Ta
RDS(on) - Ta
2.5
Drain-source On-state Resistance
RDS(on) ()
Gate-source Threshold Voltage Vth (V)
3
2.5
2
1.5
1
0.5
0
-50
0
50
100
150
2
1.5
4.5 V
1
VGS = 10 V
0.5
0
-50
0
50
Temperature (°C)
Safe Operating Area
1
1000
IDp = 0.6 A
Drain Current ID (A)
Thermal Resistance Rth (°C / W)
150
Temperature (°C)
Rth - tsw
100
10
Ta = 25 ºC, Glass epoxy board
(25.4 x 25.4 x t0.8 mm)
coated with copper foil,
which has more than 300 mm2.
1
0.001
0.1
10
1000
1 ms
0.1
10 ms
Operation in this area
is limited by RDS(on)
100 ms
1s
0.01
0.001
0.01
Ta = 25 ºC, Glass epoxy board
(25.4 x 25.4 x t0.8 mm)
coated with copper foil,
which has more than 300 mm2.
0.1
1
DC
10
100
Drain-source Voltage VDS (V)
Pulse Width tsw (s)
PD - Ta
0.4
Total Power Dissipation PD (W)
100
0.3
0.2
0.1
0
0
50
100
150
Temperature Ta (°C)
Page 4 of 5
Established : 2012-08-08
Revised
: 2013-10-10
Doc No. TT4-EA-14201
Revision. 5
Product Standards
MOS FET
FK360602EL
NMini3-R1-B
Unit : mm
+0.2
2.9-0.1
+0.05
0.13-0.02
+0.10
0.40-0.05
(7°)
+0.2
2
1.9±0.1
0.25±0.10
(0.95) (0.95)
0.5±0.1
1
2.4-0.1
1.4±0.1
3
0 to 0.1
1.0±0.1
(7°)
 Land Pattern (Reference) (Unit : mm)
2.2
0.7
0.8
1.9
Page 5 of 5
Established : 2012-08-08
Revised
: 2013-10-10
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for general applications (such as office equipment, communications
equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book.
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment,
life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of
the products may directly jeopardize life or harm the human body.
It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with
your using the products described in this book for any special application, unless our company agrees to your using the products in
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(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
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20100202
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