Doc No. TT4-EA-14201 Revision. 5 Product Standards MOS FET FK360602EL FK360602EL Silicon N-channel MOSFET Unit : mm For switching circuits 2.9 0.4 Features 0.13 3 1.4 2.4 Low Drain-source On-state Resistance : RDS(on) typ = 1 (VGS = 4.5 V) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 compliant) 1 Marking Symbol : 1.0 GV (0.95)(0.95) 1.9 Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) Absolute Maximum Ratings Ta = 25 C Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current (Pulsed) *1 Total Power Dissipation*2 Channel Temperature Storage Temperature Range 2 Symbol VDS VGS ID IDp PD Tch Tstg Rating 60 20 300 600 350 150 -55 to +150 Unit V V mA mA mW C C 1. 2. 3. Panasonic JEITA Code Gate Source Drain NMini3-R1-B SC-59A TO-236AA/SOT-23 Internal Connection 3 Note *1 Pulse test: Ensure that the channel temperature does not exceed 150 C *2 Mounted on FR4 board (25.4mm×25.4mm×t0.8mm,Cu area >300mm2) 1 2 Pin Name 1. 2. 3. Gate Source Drain Page 1 of 5 Established : 2012-08-08 Revised : 2013-10-10 Doc No. TT4-EA-14201 Revision. 5 Product Standards MOS FET FK360602EL Electrical Characteristics Ta = 25 C 3 C Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current Gate-source Leakage Current Gate-source Threshold Voltage Drain-source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate to Source Charge Gate to Drain Charge Symbol Conditions ID = 250 A, VGS = 0 V VDS = 60 V, VGS = 0 V VGS = 20 V, VDS = 0 V ID = 250 A, VDS = 10 V RDS(on)1 ID = 100 mA, VGS = 10 V RDS(on)2 ID = 100 mA, VGS = 4.5 V Ciss VDS = 10 V, VGS = 0 V Coss f = 1 MHz Crss Qg VDS = 10 V, VGS = 0 to 4.5 V Qgs ID = 200 mA Qgd VDSS IDSS IGSS Vth Min Typ Max 60 1 0.8 1 40 7 4.5 0.8 0.2 0.4 1 10 3 3 4 Unit V A A V pF nC Note: Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. Page 2 of 5 Established : 2012-08-08 Revised : 2013-10-10 Doc No. TT4-EA-14201 Revision. 5 Product Standards MOS FET FK360602EL Technical Data ( reference ) ISD - VSD ID - VGS 1.E-01 1.E-02 1.E-02 Ta = 85 ºC Drain Current ID (A) Forward Drain Current ISD (A) 1.E-01 1.E-03 1.E-04 1.E-05 1.E-06 1.E-07 0 0.2 0.4 0.6 0.8 1 1.E-03 25 ºC 1.E-04 - 40 ºC 1.E-05 1.E-06 1.E-07 1 Body Diode Forward Voltage VSD (V) RDS(on) - VGS 2.5 3 RDS(on) - ID 1.4 Drain source On-state Resistance RDS(on) () ID = 100 mA 1.2 Ta = 85 ºC 1 25 ºC VGS = 4.5 V 1 10 V 0.8 - 40 ºC 0.6 0.1 0 5 0 10 0.1 0.2 Drain Current ID (A) Gate-source Voltage VGS (V) Capacitance - VDS Dynamic Input/Output Characteristics 10 Gate-source Voltage VGS (V) 100 Ciss Capacitance C (pF) 2 Gate-source Voltage VGS (V) 10 Drain source On-state Resistance RDS(on) () 1.5 10 Coss Crss 1 8 6 4 2 0 0.1 1 10 Drain-source Voltage VDS (V) 100 0 0.5 1 1.5 2 Total Gate Charge Qg (nC) Page 3 of 5 Established : 2012-08-08 Revised : 2013-10-10 Doc No. TT4-EA-14201 Revision. 5 Product Standards MOS FET FK360602EL Technical Data ( reference ) Vth - Ta RDS(on) - Ta 2.5 Drain-source On-state Resistance RDS(on) () Gate-source Threshold Voltage Vth (V) 3 2.5 2 1.5 1 0.5 0 -50 0 50 100 150 2 1.5 4.5 V 1 VGS = 10 V 0.5 0 -50 0 50 Temperature (°C) Safe Operating Area 1 1000 IDp = 0.6 A Drain Current ID (A) Thermal Resistance Rth (°C / W) 150 Temperature (°C) Rth - tsw 100 10 Ta = 25 ºC, Glass epoxy board (25.4 x 25.4 x t0.8 mm) coated with copper foil, which has more than 300 mm2. 1 0.001 0.1 10 1000 1 ms 0.1 10 ms Operation in this area is limited by RDS(on) 100 ms 1s 0.01 0.001 0.01 Ta = 25 ºC, Glass epoxy board (25.4 x 25.4 x t0.8 mm) coated with copper foil, which has more than 300 mm2. 0.1 1 DC 10 100 Drain-source Voltage VDS (V) Pulse Width tsw (s) PD - Ta 0.4 Total Power Dissipation PD (W) 100 0.3 0.2 0.1 0 0 50 100 150 Temperature Ta (°C) Page 4 of 5 Established : 2012-08-08 Revised : 2013-10-10 Doc No. TT4-EA-14201 Revision. 5 Product Standards MOS FET FK360602EL NMini3-R1-B Unit : mm +0.2 2.9-0.1 +0.05 0.13-0.02 +0.10 0.40-0.05 (7°) +0.2 2 1.9±0.1 0.25±0.10 (0.95) (0.95) 0.5±0.1 1 2.4-0.1 1.4±0.1 3 0 to 0.1 1.0±0.1 (7°) Land Pattern (Reference) (Unit : mm) 2.2 0.7 0.8 1.9 Page 5 of 5 Established : 2012-08-08 Revised : 2013-10-10 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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