Si2303BDS
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)b
0.200 at VGS = - 10 V
- 1.64
0.380 at VGS = - 4.5 V
- 1.0
VDS (V)
- 30
• Halogen-free Option Available
Pb-free
Available
RoHS*
COMPLIANT
TO-236
(SOT-23)
G
1
S
2
3
D
Top View
Si2303BDS (L3)*
* Marking Code
Ordering Information: Si2303BDS-T1
Si2303BDS-T1-E3 (Lead (Pb)-free)
Si2303BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
VDS
- 30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)b
TA = 25 °C
TA = 70 °C
Pulsed Drain Currenta
IS
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
PD
V
- 1.64
- 1.49
- 1.31
- 1.2
IDM
Continuous Source Current (Diode Conduction)b
Power Dissipationb
ID
- 10
- 0.75
A
- 0.6
0.9
0.7
0.57
0.45
TJ, Tstg
Unit
- 55 to 150
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb
Maximum Junction-to-Ambientc
Symbol
RthJA
Typical
Maximum
120
145
140
175
Unit
°C/W
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 board, t ≤ 5 s.
c. Surface Mounted on FR4 board.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
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Si2303BDS
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Limits
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS = 0 V, ID = - 10 µA
- 30
VGS(th)
VDS = VGS, ID = - 250 µA
- 1.0
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
VDS = - 30 V, VGS = 0 V
-1
VDS = - 30 V, VGS = 0 V, TJ = 55 °C
- 10
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-Resistancea
RDS(on)
VDS ≤ - 5 V, VGS = - 10 V
- 3.0
-6
V
nA
µA
A
VGS = - 10 V, ID = - 1.7 A
0.150
0.200
VGS = - 4.5 V, ID = - 1.3 A
0.285
0.380
Forward Transconductancea
gfs
VDS = - 5 V, ID = - 1.7 A
2.0
Diode Forward Voltage
VSD
IS = - 0.75 A, VGS = 0 V
- 0.85
- 1.2
4.3
10
Ω
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = - 15 V, VGS = - 10 V, ID ≅ - 1.7 A
nC
0.8
1.3
180
VDS = - 15 V, VGS = 0 V, f = 1 MHz
pF
50
35
Switchingc
Turn-On Time
Turn-Off Time
td(on)
tr
td(off)
tf
VDD = - 15 V, RL = 15 Ω
ID ≅ - 1.0 A, VGEN = - 4.5 V
RG = 6 Ω
55
80
40
60
10
20
10
20
ns
Notes:
a. Pulse test: PW ≤ 300 µs, duty cycle ≤ 2 %.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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