APM2324AA
N-Channel Enhancement Mode MOSFET
Features
•
Pin Description
20V/3A,
D
RDS(ON)= 50mΩ(Typ.) @ VGS= 4.5V
RDS(ON)= 65mΩ(Typ.) @ VGS= 2.5V
G
S
RDS(ON)= 120mΩ(Typ.) @ VGS= 1.8V
•
•
•
Super High Dense Cell Design
Top View of SOT-23
Reliable and Rugged
Lead Free and Green Devices Available
D
(RoHS Compliant)
Applications
•
G
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
S
N-Channel MOSFET
Ordering and Marking Information
Package Code
A : SOT-23
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
L : Lead Free Device
G : Halogen and Lead Free Device
APM2324A
Assembly Material
Handling Code
Temperature Range
Package Code
APM2324A
A:
X - Date Code
A24X
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. A.2 - Sep., 2008
1
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APM2324AA
Absolute Maximum Ratings
Symbol
(TA = 25°C unless otherwise noted)
Parameter
Rating
VDSS
Drain-Source Voltage
20
VGSS
Gate-Source Voltage
±12
Continuous Drain Current
IDM*
300µs Pulsed Drain Current
IS*
Diode Continuous Forward Current
TJ
Maximum Junction Temperature
Storage Temperature Range
PD*
Maximum Power Dissipation
RθJA*
V
3
ID*
TSTG
Unit
VGS=4.5V
A
10
A
1
150
°C
-55 to 150
TA=25°C
0.83
TA=100°C
0.3
Thermal Resistance-Junction to Ambient
W
150
°C/W
Note : *Surface Mounted on 1in pad area, t ≤ 10 Sec.
2
Electrical Characteristics
Symbol
Parameter
(TA = 25°C unless otherwise noted)
Test Conditions
APM2324AA
Min.
Typ.
Max.
20
-
-
-
-
1
-
-
30
Unit
STATIC CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS(th)
IGSS
RDS(ON)
a
VSD
a
VDS=16V, VGS=0V
TJ=85°C
V
µA
Gate Threshold Voltage
VDS=VGS, IDS=250µA
0.5
0.7
1
V
Gate Leakage Current
VGS=±10V, VDS=0V
-
-
±10
µA
VGS=4.5V, IDS=3A
-
50
65
VGS=2.5V, IDS=2A
-
65
90
VGS=1.8V, IDS=0.5A
-
120
200
ISD=1A, VGS=0V
-
0.7
1.3
-
4.4
6
-
0.5
-
-
1.6
-
Drain-Source On-state Resistance
Diode Forward Voltage
GATE CHARGE CHARACTERISTICS
Qg
VGS=0V, IDS=250µA
Gate-Source Charge
Qgd
Gate-Drain Charge
Copyright  ANPEC Electronics Corp.
Rev. A.2 - Sep., 2008
V
b
Total Gate Charge
Qgs
mΩ
VDS=10V, VGS=4.5V,
IDS=3A
2
nC
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APM2324AA
Electrical Characteristics (Cont.)
Symbol
Parameter
DYNAMIC CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Test Conditions
APM2324AA
Unit
Min.
Typ.
Max.
-
5
-
-
320
-
-
70
-
-
50
-
-
4
8
-
14
26
-
21
39
-
5
10
-
15
-
ns
-
6
-
nC
b
RG
Gate Resistance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON)
Turn-On Delay Time
tr
Turn-On Rise Time
td(OFF)
Turn-Off Delay Time
tf
Turn-Off Fall Time
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=10V,
Frequency=1.0MHz
VDD=10V, RL=10Ω,
IDS=1A, VGEN=4.5V,
RG=6Ω
ISD=3A, dlSD/dt=100A/µs
Ω
pF
ns
Note a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
Note b : Guaranteed by design, not subject to production testing.
Copyright  ANPEC Electronics Corp.
Rev. A.2 - Sep., 2008
3
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APM2324AA
Typical Operating Characteristics
Power Dissipation
Drain Current
3.5
1.0
3.0
ID - Drain Current (A)
Ptot - Power (W)
0.8
0.6
0.4
2.5
2.0
1.5
1.0
0.2
0.5
o
0.0
o
TA=25 C
0
20
40
60
0.0
80 100 120 140 160
0
20
40
60
80 100 120 140 160
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
30
Normalized Transient Thermal Resistance
2
Rd
s(o
n)
Lim
it
10
ID - Drain Current (A)
TA=25 C,VG=4.5V
300µs
1
1ms
10ms
100ms
0.1
1s
DC
o
TA=25 C
0.01
0.01
0.1
1
10
0.2
0.1
0.05
0.1
0.02
0.01
2
Mounted on 1in pad
o
RθJA : 150 C/W
Single Pulse
0.01
1E-4
100
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. A.2 - Sep., 2008
Duty = 0.5
1
1E-3
0.01
0.1
1
10
100
Square Wave Pulse Duration (sec)
4
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APM2324AA
Typical Operating Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
10
200
VGS= 2.5,3,4,5,6,7,8,9,10V
9
VGS=1.8V
RDS(ON) - On - Resistance (mΩ)
2V
8
ID - Drain Current (A)
180
7
6
5
4
3
1.5V
2
1
160
140
120
100
80
VGS=2.5V
VGS=4.5V
60
40
20
0
0.0
0.5
1.0
1.5
2.0
2.5
0
3.0
0
2
4
6
VDS - Drain-Source Voltage (V)
ID - Drain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
140
10
1.8
ID=3A
IDS =250µA
1.6
Normalized Threshold Voltage
120
RDS(ON) - On - Resistance (mΩ)
8
100
80
60
40
1.4
1.2
1.0
0.8
0.6
0.4
0.2
20
0
1
2
3
4
5
6
7
8
9
0.0
-50 -25
10
VGS - Gate - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. A.2 - Sep., 2008
0
25
50
75 100 125 150
Tj - Junction Temperature (°C)
5
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APM2324AA
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
10
1.8
VGS = 4.5V
IDS = 3A
o
Tj=150 C
1.4
IS - Source Current (A)
Normalized On Resistance
1.6
1.2
1.0
0.8
0.6
o
Tj=25 C
1
0.4
o
RON@Tj=25 C: 50mΩ
0.2
-50 -25
0
25
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
75 100 125 150
Tj - Junction Temperature (°C)
VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
10
500
Frequency=1MHz
450
9
400
8
VGS - Gate - source Voltage (V)
C - Capacitance (pF)
50
350
Ciss
300
250
200
150
100
Coss
50 Crss
0
IDS = 3A
7
6
5
4
3
2
1
0
0
VDS= 10V
4
8
12
16
20
2
4
6
8
10
QG - Gate Charge (nC)
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. A.2 - Sep., 2008
0
6
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APM2324AA
Package Information
SOT-23
D
e
E
E1
SEE
VIEW A
c
b
0.25
A
L
GAUGE PLANE
SEATING PLANE
0
A1
A2
e1
VIEW A
S
Y
M
B
O
L
SOT-23
INCHES
MILLIMETERS
MIN.
MIN.
MAX.
A
MAX.
1.45
0.057
A1
0.00
0.15
0.000
0.006
A2
0.90
1.30
0.035
0.051
b
0.30
0.50
0.012
0.020
0.009
c
0.08
0.22
0.003
D
2.70
3.10
0.106
0.122
E
2.60
3.00
0.102
0.118
E1
1.40
1.80
0.055
e
0.95 BSC
e1
0.071
0.037 BSC
1.90 BSC
0.075 BSC
L
0.30
0.60
0
0°
8°
0.012
0°
0.024
8°
Note : Dimension D and E1 do not include mold flash, protrusions or gate
burrs. Mold flash, protrusion or gate burrs shall not exceed 10 mil
per side.
Copyright  ANPEC Electronics Corp.
Rev. A.2 - Sep., 2008
7
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APM2324AA
Carrier Tape & Reel Dimensions
P0
P2
P1
A
B0
W
F
E1
OD0
K0
A0
A
OD1 B
B
T
SECTION A-A
SECTION B-B
H
A
d
T1
Application
A
H
178.0±2.00 50 MIN.
SOT-23
T1
C
d
D
W
E1
8.4+2.00 13.0+0.50
1.5 MIN. 20.2 MIN. 8.0±0.30 1.75±0.10
-0.00
-0.20
P0
P1
P2
D0
D1
T
4.0±0.10
4.0±0.10
2.0±0.05
1.5+0.10
-0.00
1.0 MIN.
A0
B0
F
3.5±0.05
K0
0.6+0.00
3.20±0.20 3.10±0.20 1.50±0.20
-0.40
(mm)
Devices Per Unit
Package Type
SOT-23
Unit
Tape & Reel
Copyright  ANPEC Electronics Corp.
Rev. A.2 - Sep., 2008
Quantity
3000
8
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APM2324AA
Taping Direction Information
SOT-23
USER DIRECTION OF FEED
Reflow Condition
(IR/Convection or VPR Reflow)
tp
TP
Critical Zone
TL to TP
Ramp-up
Temperature
TL
tL
Tsmax
Tsmin
Ramp-down
ts
Preheat
25
t 25°C to Peak
Time
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TST
ESD
Latch-Up
Copyright  ANPEC Electronics Corp.
Rev. A.2 - Sep., 2008
Method
MIL-STD-883D-2003
MIL-STD-883D-1005.7
JESD-22-B,A102
MIL-STD-883D-1011.9
MIL-STD-883D-3015.7
JESD 78
9
Description
245°C, 5 SEC
1000 Hrs Bias @125°C
168 Hrs, 100%RH, 121°C
-65°C~150°C, 200 Cycles
VHBM > 2KV, VMM > 200V
10ms, 1tr > 100mA
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APM2324AA
Classification Reflow Profiles
Profile Feature
Average ramp-up rate
(TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak/Classification Temperature (Tp)
Time within 5°C of actual
Peak Temperature (tp)
Ramp-down Rate
Sn-Pb Eutectic Assembly
Pb-Free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
217°C
60-150 seconds
See table 1
See table 2
10-30 seconds
20-40 seconds
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25°C to Peak Temperature
Notes: All temperatures refer to topside of the package. Measured on the body surface.
Table 1. SnPb Eutectic Process – Package Peak Reflow Temperatures
3
Package Thickness
Volume mm
<350
<2.5 mm
240 +0/-5°C
≥2.5 mm
225 +0/-5°C
3
Volume mm
≥350
225 +0/-5°C
225 +0/-5°C
Table 2. Pb-free Process – Package Classification Reflow Temperatures
3
3
3
Package Thickness
Volume mm
Volume mm
Volume mm
<350
350-2000
>2000
<1.6 mm
260 +0°C*
260 +0°C*
260 +0°C*
1.6 mm – 2.5 mm
260 +0°C*
250 +0°C*
245 +0°C*
≥2.5 mm
250 +0°C*
245 +0°C*
245 +0°C*
*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the
stated classification temperature (this means Peak reflow temperature +0°C. For example 260°C+0°C)
at the rated MSL level.
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
2F, No. 11, Lane 218, Sec 2 Jhongsing Rd.,
Sindian City, Taipei County 23146, Taiwan
Tel : 886-2-2910-3838
Fax : 886-2-2917-3838
Copyright  ANPEC Electronics Corp.
Rev. A.2 - Sep., 2008
10
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