APM4463K
P-Channel Enhancement Mode MOSFET
Pin Description
Features
•
D
-20V/-10A,
D
RDS(ON)=12mΩ(typ.) @ VGS=-4.5V
RDS(ON)=18mΩ(typ.) @ VGS=-2.5V
•
•
•
•
S
S
Super High Dense Cell Design
D
D
S
G
Reliable and Rugged
Top View of SOP−8
SOP-8 Package
(1, 2, 3)
S S S
Lead Free and Green Devices Available
(RoHS Compliant)
Applications
•
(4) G
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
DD DD
(5, 6, 7, 8)
Systems
P-Channel MOSFET
Ordering and Marking Information
Package Code
K : SOP-8
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
APM4463
Assembly Material
Handling Code
Temperature Range
Package Code
APM4463 K :
APM4463
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. B.4 - Dec., 2008
1
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APM4463K
Absolute Maximum Ratings
(TA = 25°C unless otherwise noted)
Parameter
Symbol
Rating
VDSS
Drain-Source Voltage
-20
VGSS
Gate-Source Voltage
±16
ID*
Continuous Drain Current
IDM*
Pulsed Drain Current
IS*
Diode Continuous Forward Current
-2.3
TJ
Maximum Junction Temperature
150
TSTG
Storage Temperature Range
PD*
Maximum Power Dissipation
V
-10
VGS=-4.5V
A
-40
A
°C
-55 to 150
TA=25°C
2
TA=100°C
0.8
Thermal Resistance-Junction to Ambient
RθJA*
Unit
W
62.5
°C/W
Note : *Surface Mounted on 1in pad area, t ≤ 10sec.
2
Electrical Characteristics
Symbol
Parameter
(TA = 25°C unless otherwise noted)
Test Conditions
APM4463K
Unit
Min.
Typ.
Max.
-20
-
-
-
-
-1
-
-
-30
-0.7
-0.9
-1.5
V
nA
Static Characteristics
BV DSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
V GS(th)
IGSS
R DS(ON)
V SD
a
a
V GS=0V, IDS=-250µA
V DS=-16V, V GS=0V
T J=85°C
V
µA
Gate Threshold Voltage
V DS=VGS, IDS=-250µA
Gate Leakage Current
V GS=±16V, V DS=0V
-
-
±100
V GS=-4.5V, IDS=-10A
-
12
17
V GS=-2.5V, IDS=-8A
-
18
25
ISD=-2.3A, VGS=0V
-
-0.7
-1.3
V
Ω
Drain-Source On-state Resistance
Diode Forward Voltage
Dynamic Characteristics
mΩ
b
RG
Gate Resistance
V GS=0V,V DS=0V,F=1MHz
-
4.1
-
C iss
Input Capacitance
-
2285
-
C oss
Output Capacitance
-
555
-
C rss
Reverse Transfer Capacitance
V GS=0V,
V DS=-10V,
Frequency=1.0MHz
-
395
-
td(ON)
Turn-on Delay Time
-
18
33
Tr
Turn-on Rise Time
-
21
39
td(OFF)
Turn-off Delay Time
-
99
179
-
63
114
-
24
-
ns
-
8
-
nC
tf
Turn-off Fall Time
trr
Reverse Recovery Time
Q rr
Reverse Recovery Charge
Copyright  ANPEC Electronics Corp.
Rev. B.4 - Dec., 2008
V DD=-10V, R L=10Ω,
IDS=-1A,V GEN=-4.5V,
R G=6Ω
IDS=-10A, dlSD=-100A/µs
2
pF
ns
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APM4463K
Electrical Characteristics (Cont.)
Symbol
Parameter
Gate Charge Characteristics
Qg
(TA = 25°C unless otherwise noted)
Test Conditions
APM4463K
Min.
Typ.
Max.
-
28.3
40
-
4.8
-
-
9
-
Unit
b
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=-10V, VGS=-4.5V,
IDS=-10A
nC
Note a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
Note b : Guaranteed by design, not subject to production testing.
Copyright  ANPEC Electronics Corp.
Rev. B.4 - Dec., 2008
3
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APM4463K
Typical Operating Characteristics
Drain Current
Power Dissipation
2.5
12
10
-ID - Drain Current (A)
Ptot - Power (W)
2.0
1.5
1.0
0.5
8
6
4
2
o
o
0.0
TA=25 C
0
20
40
60
0
80 100 120 140 160
20
40
60
80 100 120 140 160
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
Normalized Transient Thermal Resistance
Rd
s(o
n)
Lim
it
-ID - Drain Current (A)
0
Tj - Junction Temperature (°C)
100
10
TA=25 C,VG=-4.5V
10ms
1
100ms
1s
0.1
DC
o
TA=25 C
0.01
0.01
0.1
1
10
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
2
Mounted on 1in pad
o
RθJA : 62.5 C/W
Single Pulse
1E-3
1E-4
100
-VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.4 - Dec., 2008
2
1E-3
0.01
0.1
1
10 30
Square Wave Pulse Duration (sec)
4
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APM4463K
Typical Operating Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
30
40
VGS= -3, -4, -5, -6, -7, -8, -9, -10V
27
RDS(ON) - On - Resistance (mΩ)
36
-ID - Drain Current (A)
32
28
24
20
-2V
16
12
8
4
0
0
1
2
3
4
15
VGS= -4.5V
12
9
6
0
5
10
15
20
25
30
35
-VDS - Drain - Source Voltage (V)
-ID - Drain Current (A)
Transfer Characteristics
Gate Threshold Voltage
1.75
40
IDS= -250µA
Normalized Threshold Voltage
1.50
30
-ID - Drain Current (A)
18
0
5
35
25
20
o
Tj=125 C
10
o
Tj=25 C
5
VGS= -2.5V
21
3
40
15
24
o
Tj=-55 C
1.00
0.75
0.50
0.25
0.00
-50 -25
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
-VGS - Gate - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.4 - Dec., 2008
1.25
0
25
50
75
100 125 150
Tj - Junction Temperature (°C)
5
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APM4463K
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
1.8
40
VGS = -4.5V
IDS = -10A
10
o
1.4
-IS - Source Current (A)
Normalized On Resistance
1.6
1.2
1.0
0.8
Tj=150 C
1
o
Tj=25 C
0.1
0.6
o
RON@Tj=25 C: 12mΩ
0.4
-50 -25
0
25
50
0.01
0.2
75 100 125 150
0.8
1.0
1.2
-VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
4.5
Frequency=1MHz
VDS= -10V
4.0
-VGS - Gate-source Voltage (V)
2500
Ciss
C - Capacitance (pF)
0.6
Tj - Junction Temperature (°C)
3000
2000
1500
1000
Coss
500 Crss
0
0.4
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
4
8
12
16
20
0
5
10
15
20
25
30
QG - Gate Charge (nC)
-VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.4 - Dec., 2008
ID= -10A
6
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APM4463K
Package Information
SOP-8
D
E
E1
SEE VIEW A
h X 45
°
c
A
0.25
b
GAUGE PLANE
SEATING PLANE
A1
A2
e
L
VIEW A
S
Y
M
B
O
L
SOP-8
MILLIMETERS
MIN.
INCHES
MAX.
A
MIN.
MAX.
1.75
0.069
0.004
0.25
0.010
A1
0.10
A2
1.25
b
0.31
0.51
0.012
0.020
c
0.17
0.25
0.007
0.010
D
4.80
5.00
0.189
0.197
E
5.80
6.20
0.228
0.244
E1
3.80
4.00
0.150
0.157
e
0.049
1.27 BSC
0.050 BSC
h
0.25
0.50
0.010
0.020
L
0.40
1.27
0.016
0.050
0
0°
8°
0°
8°
Note: 1. Follow JEDEC MS-012 AA.
2. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion or gate burrs shall not exceed 6 mil per side.
3. Dimension “E” does not include inter-lead flash or protrusions.
Inter-lead flash and protrusions shall not exceed 10 mil per side.
Copyright  ANPEC Electronics Corp.
Rev. B.4 - Dec., 2008
7
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APM4463K
Carrier Tape & Reel Dimensions
P0
P2
P1
A
B0
W
F
E1
OD0
K0
A0
A
OD1 B
B
T
SECTION A-A
SECTION B-B
H
A
d
T1
Application
A
330.0±
2.00
P0
SOP-8
4.0±0.10
H
T1
C
d
D
W
E1
F
12.4+2.00 13.0+0.50
0.05
50 MIN.
1.5 MIN. 20.2 MIN. 12.0±0.30 1.75±0.10 5.5±
-0.00
-0.20
P1
P2
D0
D1
T
A0
B0
K0
1.5+0.10
0.6+0.00
8.0±0.10 2.0±0.05
6.40±0.20 5.20±0.20 2.10±0.20
1.5 MIN.
-0.00
-0.40
(mm)
Devices Per Unit
Package Type
Unit
Quantity
SOP-8
Tape & Reel
2500
Copyright  ANPEC Electronics Corp.
Rev. B.4 - Dec., 2008
8
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APM4463K
Taping Direction Information
SOP-8
USER DIRECTION OF FEED
Reflow Condition
(IR/Convection or VPR Reflow)
tp
TP
Critical Zone
TL to TP
Temperature
Ramp-up
TL
tL
Tsmax
Tsmin
Ramp-down
ts
Preheat
25
t 25 °C to Peak
Time
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TST
Copyright  ANPEC Electronics Corp.
Rev. B.4 - Dec., 2008
Method
MIL-STD-883D-2003
MIL-STD-883D-1005.7
JESD-22-B, A102
MIL-STD-883D-1011.9
9
Description
245°C, 5 sec
1000 Hrs Bias @125°C
168 Hrs, 100%RH, 121°C
-65°C~150°C, 200 Cycles
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APM4463K
Classification Reflow Profiles
Profile Feature
Average ramp-up rate
(TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak/Classification Temperature (Tp)
Time within 5°C of actual
Peak Temperature (tp)
Ramp-down Rate
Sn-Pb Eutectic Assembly
Pb-Free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
217°C
60-150 seconds
See table 1
See table 2
10-30 seconds
20-40 seconds
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25°C to Peak Temperature
Note: All temperatures refer to topside of the package. Measured on the body surface.
Table 1. SnPb Eutectic Process – Package Peak Reflow Temperatures
3
Package Thickness
Volume mm
<350
<2.5 mm
≥2.5 mm
240 +0/-5°C
225 +0/-5°C
Volume mm
≥350
3
225 +0/-5°C
225 +0/-5°C
Table 2. Pb-free Process – Package Classification Reflow Temperatures
Package Thickness
Volume mm
<350
3
Volume mm
350-2000
3
Volume mm
>2000
3
<1.6 mm
260 +0°C*
260 +0°C*
260 +0°C*
1.6 mm – 2.5 mm
260 +0°C*
250 +0°C*
245 +0°C*
≥2.5 mm
250 +0°C*
245 +0°C*
245 +0°C*
*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the
stated classification temperature (this means Peak reflow temperature +0°C. For example 260°C+0°C)
at the rated MSL level.
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
2F, No. 11, Lane 218, Sec 2 Jhongsing Rd.,
Sindain City, Taipei County 23146, Taiwan
Tel : 886-2-2910-3838
Fax : 886-2-2917-3838
Copyright  ANPEC Electronics Corp.
Rev. B.4 - Dec., 2008
10
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