Medium power transistor (32V, 2A)
2SD1766 / 2SD1758 / 2SD1862
Dimensions (Unit : mm)
2SD1758
1.0±0.2
(2)
(3)
0.1
0.4 +
−0.05
0.5±0.1
0.4±0.1
1.5±0.1
0.9
2.3±0.2
3.0±0.2
Abbreviated symbol : DB∗
ROHM : MPT3
EIAJ : SC-62
0.65±0.1
0.75
2.3+0.2
−0.1
0.5±0.1
9.5±0.5
(1)
0.4±0.1
1.5±0.1
C0.5
0.9
5.5+0.3
−0.1
2.5 +0.2
−0.1
Structure
Epitaxial planar type NPN silicon transistor
6.5±0.2
5.1+0.2
−0.1
1.5
0.2
1.5 +
−0.1
1.6±0.1
1.5±0.3
0.5±0.1
0.2
4.5+
−0.1
2.5
2SD1766
4.0±0.3
Features
1) Low VCE(sat).
VCE(sat) = 0.5V (Typ.)
(IC/IB = 2A / 0.2A)
2) Complements the 2SB1188 / 2SB1182 / 2SB1240
2.3±0.2
0.55±0.1
1.0±0.2
(1) (2) (3)
(1) Base
(2) Collector
(3) Emitter
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
2SD1862
2.5±0.2
0.65Max.
0.5±0.1
(1)
(2)
4.4±0.2
14.5±0.5
1.0
0.9
6.8±0.2
(3)
2.54 2.54
1.05
ROHM : ATV
0.45±0.1
(1) Emitter
(2) Collector
(3) Base
∗ Denotes hFE
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
32
V
Emitter-base voltage
VEBO
5
V
2
A (DC)
Collector current
Collector
power
dissipation
IC
0.5
2SD1766
2SD1758
2.5 ∗1
PC
2 ∗2
10
1 ∗3
2SD1862
A (Pulse)
W
W (TC=25°C)
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55~+150
°C
∗1 Single pulse, PW=20ms
∗2 When mounted on a 40×40×0.7 mm ceramic board.
∗3 Printed circuit board: 1.7 mm thick, collector copper plating 1 cm2 or lager.
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1/3
2009.12 - Rev.B
2SD1766 / 2SD1758 / 2SD1862
Data Sheet
Electrical characteristics (Ta=25C)
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
Parameter
BVCBO
40
−
−
V
IC=50μA
Collector-emitter breakdown voltage
BVCEO
32
−
−
V
IC=1mA
Emitter-base breakdown voltage
BVEBO
5
−
−
V
IE=50μA
Collector cutoff current
ICBO
−
−
1
μA
VCB=20V
Emitter cutoff current
IEBO
−
−
1
μA
VEB=4V
DC current transfer ratio
hFE
120
−
390
−
VCE=3V, IC=0.5A
∗
VCE(sat)
−
0.5
0.8
V
IC/IB=2A / 0.2A
∗
Transition frequency
fT
−
100
−
MHz
VCE=5V, IE=−50mA, f=100MHz
∗
Output capacitance
Cob
−
30
−
pF
Collector-emitter saturation voltage
Conditions
VCB=10V, IE=0A, f=1MHz
∗ Measured using pulse current.
Packaging specifications and hFE
Package
Taping
Code
T100
TL
TV2
Basic ordering
unit (pieces)
1000
2500
2500
−
−
Type
hFE
2SD1766
QR
2SD1758
QR
−
2SD1862
QR
−
−
−
hFE values are classified as follows :
Item
Q
R
hFE
120 to 270
180 to 390
 Electrical characteristic curves
500
200
100
50
20
10
5
Ta=25°C
2.7mA
500
2.4mA
0.4
2.1mA
1.8mA
0.3
1.5mA
1.2mA
0.2
0.9mA
0.6mA
0.1
200
VCE=3V
1V
100
50
0.3mA
2
0
Fig.1 Grounded emitter propagation
characteristics
500
200
100
IC/IB=50
50
20
5
10
10 20
50 100 200 500 1A 2A
COLLECTOR CURRENT : IC (mA)
Fig.4 Collector-emitter saturation
voltage vs. collector current
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○
0.8
1.2
1.6
20
2.0
5
2
10 20
50 100 200
Fig.3 DC current gain vs. collector
current
1000
Ta=25°C
1
IC/IB=10
0.5
0.2
0.1
5
10 20
50 100 200
500 1A 2A
COLLECTOR CURRENT : IC (mA)
Fig.5 Collector-emitter saturation
voltage vs. collector current
2/3
500 1A 2A
COLLECTOR CURRENT : IC (mA)
Fig.2 Grounded emitter output
characteristics
BASE SATURATION VOLTAGE : VBE(sat) (V)
Ta=25°C
0.4
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
BASE TO EMITTER VOLTAGE : VBE (V)
20
IB=0A
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
TRANSITION FREQUENCY : fT (MHz)
1
0
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)
Ta=25°C
3.0mA
DC CURRENT GAIN : hFE
1000
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (mA)
0.5
Ta=25°C
VCE=3V
2000
Ta=25°C
VCE=5V
500
200
100
50
20
−1
−2
−5 −10 −20
−50 −100−200 −500 −1A
EMITTER CURRENT : IE (mA)
Fig.6 Transition frequency vs. emitter
current
2009.12 - Rev.B
Data Sheet
Cib
200
100
Cob
50
20
0.5
1
2
5
10
20
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE
: VEB (V)
Fig.7 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
COLLECTOR CURRENT : IC (A)
Ta=25°C
f=1MHz
IE=0A
IC=0A
500
10
5
5
1000
COLLECTOR CURRENT : IC (A)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE
: Cib (pF)
2SD1766 / 2SD1758 / 2SD1862
2
1
0.5
0.2
PW=10ms∗
100ms∗
DC
0.1
0.05 Ta=25°C
∗Single
0.02 nonrepetitive
pulse
0.01
0.1 0.2
0.5 1
2
5
10
20
50
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.8 Safe operating area
(2SD1766)
2
1
PW=100ms∗
0.5
0.2
0.1
0.05
TC=25°C
∗Single
0.02 nonrepetitive
pulse
0.01
0.1 0.2
0.5 1
2
5
10
20
50
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.9 Safe operating area
(2SD1758)
3
Ic Max
Ic Max Pulse
0.5
DC
COLLECTOR CURRENT : IC (A)
1
s
0m
=1
s
PW
m
00
=1
PW
2
0.2
0.1
0.05 Ta=25°C
Single
nonrepetitive
pulse
0.2 0.5
1
2
5
10
20
50
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.10 Safe operating area
(2SD1862)
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2009.12 - Rev.B
Notice
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