Data Sheet
Medium Power Transistor (50V,0.5A)
2SD1949 / 2SD1484K
Features
1) High current.(IC=0.5A)
2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA.
Dimensions (Unit : mm)
UMT3
(SC-70)
<SOT-323>
(1) Emitter
(2) Bace
(3) Collector
Absolute maximum rationgs (Ta=25 C)
SMT3
Symbol
VCBO
Limits
Unit
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
IC
(SC-59)
<SOT-346>
2.9
1.1
0.4
0.8
(3)
PC
0.5
0.2
A
W
Junction temperature
Tj
150
C
Storage temperature
Tstg
−55 to +150
C
(2)
(1)
0.95 0.95
0.15
(1) Emitter
(2) Bace
(3) Collector
1.9
0.3Min.
Collector current
Collector power dissipation
1.6
2.8
Parameter
Collector-base voltage
Electrical characteristics (Ta=25 C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector outoff current
Emitter cutoff current
Symbol
BVCBO
BVCEO
Min.
Typ.
Max.
Unit
50
50
−
−
−
−
BVEBO
5
−
ICBO
IEBO
−
−
−
µA
µA
hFE
−
−
120
−
0.5
0.5
V
V
V
VCE(sat)
−
390
0.4
−
V
fT
−
−
MHz
Cob
−
−
250
6.5
−
pF
DC current rransfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Conditions
IC=100µA
IC=1mA
IE=100µA
VCB=30V
VEB=4V
VCE/IC=3V/10mA
IC/IB=150mA/15mA
VCE=5V , IE= −20mA , f=100MHz
VCB=10V , IE=0A , f=1MHz
Packaging specifications and hFE
Type
Package
hFE
2SD1949
UMT3
2SD1484K
SMT3
QR
QR
Marking
Y
Y
Code
T106
Basic ordering unit (pleces)
3000
T146
3000
Danotes hFE
hFE values are classified as follows :
Item
Q
R
hFE
120 to 270
180 to 390
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© 2011 ROHM Co., Ltd. All rights reserved.
1/2
2011.06 - Rev. E
2SD1949 / 2SD1484K
Data Sheet
Electrical characteristic curves
100
200
1000
0.50
VCE=6V
Ta=25 C
0.45
2
1
-25 C
5
25 C
C
20
10
0.5
500
0.40
80
DC CURRENT GAIN hFE
COLLECTOR CURRENT : IC (mA)
50
Ta=100
COLLECTOR CURRENT : IC (mA)
VCE=6V
100
0.35
0.30
60
0.25
0.20
40
0.15
0.10
20
1V
100
50
0.05
0.2
VCE=3V
200
IB=0mA
0.1
0
0.2
0.4
0.6
0.8
1.0
2
3
4
0.1 0.2 0.5 1 2
5
5 10 20
50 100 200 500
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR CURRENT IC (mA)
Fig.1 Ground emitter propagation
characteristics
Fig.2 Ground emitter output characteristics
Fig.3 DC current gain vs. Collector current ( )
Ta=25 C
VCE=10V
25 C
-25 C
100
50
COLLECTOR SATURATION
VOLTAGE : VCE (sat) (V)
Ta=75 C
IC/IB=10
0.5
COLLECTOR SATURATION
VOLTAGE : VCE (sat) (V)
500
200
1
BASE TO VOLTAGE : VBE (V)
1000
DC CURRENT GAIN hFE
0
0
1.2
0.2
100/1
IC/IB=
0.1
50/1
20/1
0.05
10/1
0.5
0.2
0.1
0.05
25 C
Ta=75 C
-25 C
20
1
2
5
10 20
0.02
50 100 200 500 1000
5
10
20
50 100 200
500
0.02
5
10 20
50 100 200 500 1000
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
Fig.4 DC current gain vs. Collector currnet ( )
Fig.5 Collector-emitter saturation voltage
vs. Collector current
Fig.6 Collector-emitter saturation voltage
vs. collector current
Ta=25 C
f=1MHz
IE=0A
50
Cib
20
Cob
10
Ta=25 C
5
VCE=6V
500
TRANSITION
FREQUENCY : fT (MHZ)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE : Cib (pF)
COLLECTOR CURRENT IC (mA)
200
100
0.1 0.2
0.5
1
2
5
10 20
-1
-2
-5
-10
-20
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
EMITTER CURRENT : IE (mA)
Fig.7 Input-and-output capacity
vs.voltage characteristic
Fig.8 Transition frequency
vs.emitter current
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2011.06 - Rev. E
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R1120A