General purpose small signal amplifier (50V, 0.15A) 2SC4081UB Applications General purpose small signal amplifier Dimensions (Unit : mm) UMT3F Structure NPN silicon epitaxial planar transistor 2.0 0.9 0.53 0.32 (3) 0.53 0.425 2.1 1.25 0.425 Features 1) Low Cob. Cob=2.0pF (Typ.) 2) Complements the 2SA1576UB. (1) (2) 0.13 0.65 0.65 1.3 Each lead has same dimensions (1) Base (2) Emitter (3) Collector Abbreviated symbol : B ∗ = Denotes hFE ∗ Absolute maximum (Ta=25C) Symbol Limits Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 7 V Parameter 150 mA ICP ∗1 200 mA Power dissipation PD ∗2 200 mW Junction temperature Tj 150 °C Tstg −55 to +150 °C IC Collector current Range of storage temperature ∗1 Pw=1ms Single pulse ∗2 Each terminal mounted on a recommended land Electrical characteristics (Ta=25C) Symbol Min. Typ. Max. Unit Collector-emitter breakdown voltage BVCEO 50 − − V IC=1mA Collector-base breakdown voltage BVCBO 60 − − V IC=50μA Emitter-base breakdown voltage BVEBO 7 − − V IE=50μA ICBO − − 100 nA VCB=60V Parameter Collector cutoff current IEBO − − 100 nA VEB=7V VCE(sat) − − 400 mV IC/IB=50mA/5mA Emitter cutoff current Collector-emitter saturation voltage Conditions hFE 120 − 390 − Transition frequency fT − 180 − MHz Output capacitance Cob − 2.0 3.5 pF DC current gain VCE=6V, IC=1mA VCE=12V, IE=−2mA, f=100MHz VCB=12V, IE=0A, f=1MHz hFE rank categories Rank Q R hFE 120 to 270 180 to 390 www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/3 2010.09 - Rev.D 2SC4081UB Data Sheet Electrical characteristic curves COLLECTOR CURRENT : IC (mA) 2 1 25°C −55°C 5 0.5 0.2 0.20mA 0.15mA 40 0.10mA 20 0.05mA IB=0A Fig.2 DC CURRENT GAIN : hFE VCE=5V 3V 1V 100 50 20 2 5 10 20 VCE=5V 25°C 200 −55°C 100 50 20 10 0.2 50 100 200 0.5 1 2 5 10 20 50 100 200 Fig.4 DC current gain vs. collector current ( Ι ) Fig.5 DC current gain vs. collector current ( ΙΙ ) 0.2 Ta=100°C 25°C −55°C 0.05 0.02 0.01 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( Ι ) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (mA) IC/IB=10 0.5 0.2 24μA 21μA 6 18μA 15μA 12μA 4 9μA 6μA 2 3μA 4 IB=0A 12 8 Fig.3 Ta=100°C 25°C −55°C 0.05 0.02 0.01 2 5 10 20 50 100 COLLECTOR CURRENT : IC (mA) Fig.8 Collector-emitter saturation voltage vs. collector current (ΙΙ) 2/3 20 Grounded emitter output characteristics ( ΙΙ ) 0.5 Ta=25°C 0.2 IC/IB=50 20 10 0.1 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 Fig. 6 Collector-emitter saturation voltage vs. collector current IC/IB=50 0.5 1 16 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (mA) 0.1 0.2 27μA 0 0 2.0 COLLECTOR CURRENT : IC (mA) 0.5 0.2 1.6 30μA Ta=25°C 8 Grounded emitter output characteristics ( Ι ) Ta=100°C 200 0.1 1.2 500 Ta=25°C 0.5 1 0.8 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Grounded emitter propagation characteristics 10 0.2 0.4 0 TRANSITION FREQUENCY : fT (MHz) Fig.1 DC CURRENT GAIN : hFE 0.25mA 60 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 0.30mA 0 0.1 0 500 80 10 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 10 Ta=100°C COLLECTOR CURRENT : IC (mA) 20 0.50mA mA 0.45 A 0.40m m 0.35 A Ta=25°C VCE=6V COLLECTOR CURRENT : IC (mA) 100 50 Ta=25°C VCE=6V 500 200 100 50 −0.5 −1 −2 −5 −10 −20 −50 −100 EMITTER CURRENT : IE (mA) Fig.9 Gain bandwidth product vs. emitter current 2010.09 - Rev.D Data Sheet 20 10 Ta=25°C f=1MHz IE=0A IC=0A Cib 5 2 Co b 1 0.2 0.5 1 2 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.10 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ BASE COLLECTOR TIME CONSTANT : Cc·rbb' (ps) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 2SC4081UB Ta=25°C f=32MHZ VCB=6V 200 100 50 20 10 −0.2 −0.5 −1 −2 −5 −10 EMITTER CURRENT : IE (mA) Fig.11 Base-collector time constant vs. emitter current 3/3 2010.09 - Rev.D Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. 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