RPI-1040
Thin type / Surface Mount type 4 Direction Detector
Absolute maximum ratings (Ta=25°C)
Symbol
Limits
Unit
Forward current
IF
50
mA
Reverse voltage
VR
5
V
Power dissipation
PD
80
mW
Collector-emitter voltage
VCEO
30
V
Emitter-collector voltage
VECO
4.5
V
Collector current
IC
30
mA
Collector power dissipation
PC
80
mW
Operating temperature
Topr
−25 to +85
°C
Storage temperature
Tstg
−30 to +85
°C
Applications
DSC(Digital steal camera)
DVC(Digital video camera)
Digital handy phone, Fan herater,
Projector
Features
1) Surface Mount type
2) Optical Sensor
3) 4 Pirection Detector
4) Noise less type
Electrical and optical characteristics (Ta=25°C)
Output Input
charac- characteristics teristics
Parameter
Transfer
characteristics
Conditions
Symbol
Min.
Typ.
Max.
Unit
Forward voltage
VF
−
1.1
1.3
V
IF=5mA
Reverse current
IR
−
−
10
μA
VR=10V
ICEO
−
−
0.5
μA
VCE=10V
IC
50
80
−
μA
VCE=5V, IF=5mA
Ileak
−
10
20
μA
VCE=5V, IF=5mA
Dark current
Collector current
DC leakage
Photo
Infrared
transistor light
emitter
diode
current
Collector-emitter saturation voltage VCE(sat)
−
−
0.4
V
Response time Rise time
Fall time
tr
−
10
−
μs
tf
−
10
−
μs
Peak light emitting wavelength
λP
−
950
−
nm
Maximum sensitivity wavelength
λP
−
800
−
nm
IF=5mA, IC=0.05mA
VCC=5V, Ic=0.05mA, RL=100Ω
IF=50mA
∗ Non-coherent Infrared light emitting diode used.
−
60
FORWARD CURRENT : IF (mA)
50
40
30
20
10
0
−25
0
25
50
75
50
40
30
20
10
0
100
75 °C
50 °C
25 °C
0 °C
−25 °C
0.9
AMBIENT TEMPERATURE : Ta (°C)
COLLECTOR CURRENT : IC (mA)
80
60
40
20
10
25
40
55
70
85
AMBIENT TEMPERATURE : Ta (°C)
Fig.4 Relative output vs. ambient
temperature
80
60
40
20
0
−25
0
25
50
75
100
AMBIENT TEMPERATURE : Ta (°C)
0.15
VCE=5V
1
0.8
0.6
0.4
0.2
0
0
100
Fig.3 Power dissipation / collector power
dissipation vs. ambient temperature
1.2
IF=5mA
VCE=5V
5
1.5
Fig.2 Forward current vs. forward
voltage
120
0
−35 −20
1.3
FORWARD VOLTAGE : VF (V)
Fig.1 Forward current falloff
100
1.1
DC LEAKAGE CURRENT : Ileak (mA)
FORWARD CURRENT : IF (mA)
60
POWER DISSIPATION /
COLLECTOR POWER DISSIPTION : PD/PC (mW)
Electrical and optical characteristics curves
RELATIVE COLLECTOR CURRENT : Ic (%)
Output
(phototransistor )
Input (LED)
Parameter
VCE=5V
0.1
0.05
0
10
20
30
40
50
0
10
20
30
40
50
FORWARD CURRENT : IF (mA)
FORWARD CURRENT : IF (mA)
Fig.5 Collector current vs.
forward current
Fig.6 DC leakage current vs.
forward current
Dimensions (Unit : mm)
3. 1
Stamp
(year, week, day of the week)
3. 1
1PIN mark
0. 8
A hole
2. 9
0. 9
0. 6
1. 7
2. 9
Pattern
Internal connection diagram
Anode
Cathode
Collector2
Collector 1
Detector 2
Detector 1
Emitter2
800
IF=50mA
tr
600
tf
500
400
300
200
COLLECTOR CURRENT : IC (mA)
VCE=10V
DARK CURRENT : ICEO (nA)
RESPONSE TIME : t (μs)
0.8
10000
VCC=5V
700 IC=0.1mA
1000
100
10
1
0.1
100
0
1
10
0.01
−25
100
25
75
AMBIENT TEMPERATURE : Ta (°C)
LOAD RESISTANCE : RL (kΩ)
Fig.7 Response time vs.
load resistance
input
Notes:
Unspecified tolerance
shall be ±0.2 .
Emi tter 1
Fig.8 Dark current vs.
ambient temperature
0.7
IF=40mA
0.6
0.5
IF=30mA
0.4
IF=20mA
0.3
0.2
IF=10mA
0.1
0
0
IF=5mA
2
4
6
8
10
COLLECTOR TO EMITTER VOLTAGE: VCE (V)
Fig.9 Output characteristics
VCC
90%
VOUT1
VOUT2
RIF
RL1
RL2
10%
VOUT
tr
tf
Fig.10 Response time measurement circuit
2010.04 Rev.A
Notice
Notes
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