Midium Power Transistors (50V / 3A)
2SCR533P
 Structure
NPN Silicon epitaxial planar transistor
 Dimensions (Unit : mm)
 Features
1) Low saturation voltage, typically
VCE (sat) = 0.13V (Max.) (IC / IB= 1A / 50mA)
(1)
2) High speed switching
 Applications
Driver
(2)
(3)
Abbreviated symbol : NM
 Packaging specifications
 Inner circuit (Unit : mm)
Package
Taping
Code
T100
Basic ordering unit (pieces) 1000

2SCR533P
(2)
Type
(1)
 Absolute maximum ratings (Ta = 25C)
Symbol
Limits
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
DC
Collector current
Pulsed
VEBO
6
V
IC
Parameter
Power dissipation
Junction temperature
Range of storage temperature
3
A
ICP
*1
6
A
PD
*2
0.5
W
PD
*3
2
W
150
-55 to 150
C
C
Tj
Tstg
(1) Base
(2) Collector
(3) Emitter
(3)
*1 Pw=10ms, Single Pulse
*2 Each terminal mounted on a recommended land.
*3 Mounted on a ceramic board. (40x40x0.7mm³)
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1/4
2009.12 - Rev.A
2SCR533P
Data Sheet
Electrical characteristic (Ta = 25C)
Symbol
Min.
Typ.
Max.
Unit
Collector-emitter breakdown voltage
BVCEO
50
-
-
V
Collector-base breakdown voltage
BVCBO
50
-
-
V
IC= 100μA
Emitter-base breakdown voltage
BVEBO
6
-
-
V
IE= 100μA
Collector cut-off current
ICBO
-
-
1
A
VCB= 50V
Emitter cut-off current
IEBO
-
-
1
A
VEB= 4V
*1
VCE(sat)
-
130
350
hFE
180
-
450
-
-
320
-
MHz
Parameter
Collector-emitter staturation voltage
DC current gain
Transition frequency
fT *1
mV IC= 1A, IB= 50mA
Collector output capacitance
Cob
-
13
-
pF
Turn-on time
ton *2
-
50
-
ns
Storage time
tstg *2
-
450
-
ns
tf *2
-
80
-
ns
Fall time
Conditions
IC= 1ｍA
VCE= 3V, IC= 50mA
VCE= 10V
IE=-500mA, f=100MHz
VCB= 10V, IE=0A
f=1MHｚ
IC= 1.5A,IB1= 150mA,
IB2=-150mA,VCC ~
_10V
*1 Pulsed
*2 See switching time test circuit
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2009.12 - Rev.A
2SCR533P
Data Sheet
Electrical characteristic curves

5mA
0.50
3.0mA
2.5mA
1000
1000
Ta=25°C
2.0mA
VCE=3V
1.5mA
0.35
0.30
1.0mA
0.25
0.20
0.15
0.5mA
0.10
DC CURRENT GAIN : hFE
0.40
DC CURRENT GAIN : hFE
COLLECTOR CURRENT : IC[A]
0.45
VCE=5V
3V
100
Ta=125°C
75°C
25°C
-40°C
100
0.05
Ta=25°C
0.5
1
1.5
10
10
1
2
COLECTOR TO EMITTER VOLTAGE : VCE[V]
0.1
IC/IB=50
20
10
0.01
0.001
1
10
100
1000
10000
COLLECTOR SATURATION VOLTAGE : VCE(sat)[V]
COLLECTOR SATURATION VOLTAGE : VCE (sat)[V]
Ta=25°C
1
100
10
Cob
1
0.1
1
10
100
COLLECTOR - BASE VOLTAGE : VCB [V]
EMITTER - BASE VOLTAGE : VEB [V]
Fig.7 Emitter Input Capacitance vs.
Emitter-Base Voltage
Collector Output Capacitance vs.
Collector-Base Voltage
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○
1
10
100
1000
10000
COLLECTOR CURRENT : IC[mA]
Fig3. DC Current Gain vs.
Collector Current ( ΙΙ )
10000
Ta=125°C
75°C
25°C
-40°C
0.01
VCE=3V
1000
Ta=125°C
75°C
25°C
-40°C
100
10
1
0.001
TRANSITION FREQUENCY : fT[MHz]
EMITTER INPUT CAPACITANCE : Cib(pF)
COLLECTOR OUTPUT CAPACITANCE : Cob(pF)
Cib
10000
0.1
1
Fig.4 Collector-Emitter Saturation Voltage
vs. Collector Current ( Ι )
Ta=25°C
f=1MHz
IE=0A
IC=0A
1000
IC/IB=20
COLLECTOR CURRENT : IC[mA]
1000
100
COLLECTOR CURRENT : IC[mA]
Fig.2 DC Current Gain vs.
Collector Current ( Ι )
Fig.1 Typical Output Characteristics
1
10
COLLECTOR CURRENT : IC [mA]
0
10
100
1000
10000
0
1
1.5
BASE TO EMITTER VOLTAGE : VBE[V]
Fig.5 Collector-Emitter Saturation Voltage
vs. Collector Current ( ΙΙ )
Fig.6 Ground Emitter Propagation
Characteristics
1000 Ta=25°C
VCE=10V
10
100
10
10
0.5
COLLECTOR CURRENT : IC[mA]
COLLECTOR CURRENT : IC [A]
0.00
100
EMITTER CURRENT : IE[mA]
Fig.8 Gain Bandwidth Product vs.
Emitter Current
3/4
1000
Single pulse
1ms
10ms
100ms
1
0.1 DC Ta=25°C
(Mounted on a
recommended land)
DC Ta=25°C
(Mounted on a ceramic board)
0.01
0.1
1
10
100
COLLECTOR TO EMITTER VOLTAGE : VCE[V]
Fig.9 Safe Operating Area
2009.12 - Rev.A
2SCR533P
Data Sheet
Switching time test circuit
RL=6.8Ω
IB1
VIN
IC
VCC
~_10V
IB2
Pw
Pw
~_50μs
DUTY CYCLE1%
IB1
BASE CURENT WAVEFORM
IB2
ton
tstg
tf
90%
IC
COLLECTOR CURRENT
WAVEFORM
10%
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2009.12 - Rev.A
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