MICROWAVE POWER GaAs FET
TIM7179-4UL
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
FEATURES
„ HIGH POWER
P1dB=36.5dBm at 7.1GHz to 7.9GHz
„ HIGH GAIN
G1dB= 9.0dB at 7.1GHz to 7.9GHz
„ BROAD BAND INTERNALLY MATCHED FET
„ HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS
CHARACTERISTICS
Output Power at 1dB Gain
SYMBOL
( Ta= 25°C )
CONDITIONS
P1dB
UNIT
MIN.
TYP. MAX.
dBm
35.5
36.5
⎯
dB
8.0
9.0
⎯
A
⎯
1.1
1.3
Compression Point
Power Gain at 1dB Gain
VDS= 10V
G1dB
Compression Point
IDSset=0.9A
f = 7.1 to 7.9GHz
Drain Current
IDS1
Gain Flatness
ΔG
dB
⎯
⎯
±0.6
Power Added Efficiency
ηadd
%
⎯
35
⎯
3rd Order Intermodulation
IM3
dBc
-44
-47
⎯
Distortion
Drain Current
Channel Temperature Rise
Two-Tone Test
Po= 25.5dBm
IDS2
(Single Carrier Level)
A
⎯
1.1
1.3
ΔTch
(VDS X IDS + Pin – P1dB)
°C
⎯
⎯
80
UNIT
mS
MIN.
V
-1.0
-2.5
-4.0
A
⎯
2.6
⎯
V
-5
⎯
⎯
°C/W
⎯
4.5
6.0
X Rth(c-c)
Recommended gate resistance(Rg) : Rg= 150 Ω(MAX.)
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
Transconductance
Pinch-off Voltage
SYMBOL
gm
VGSoff
Saturated Drain Current
IDSS
Gate-Source Breakdown
Voltage
VGSO
Thermal Resistance
( Ta= 25°C )
CONDITIONS
VDS= 3V
IDS= 1.5A
VDS= 3V
IDS= 15mA
VDS= 3V
VGS= 0V
IGS= -50μA
Rth(c-c) Channel to Case
⎯
TYP. MAX.
900
⎯
‹ The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Jun. 2009
TIM7179-4UL
ABSOLUTE MAXIMUM RATINGS
( Ta= 25°C )
CHARACTERISTICS
SYMBOL
UNIT
RATING
Drain-Source Voltage
VDS
V
15
Gate-Source Voltage
VGS
V
-5
Drain Current
IDS
A
3.5
Total Power Dissipation (Tc= 25 °C)
PT
W
25
Channel Temperature
Tch
°C
175
Storage
Tstg
°C
-65 to +175
PACKAGE OUTLINE (2-11D1B)
Unit in mm
c Gate
d Source
e Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260°C.
2
TIM7179-4UL
RF PERFORMANCE
Output Power vs. Frequency
39
VDS= 10V
IDS≅ 1.1A
Pin= 27.5dBm
37
36
35
34
6.8
7
7.2
7.4
7.6
7.8
8
8.2
Frequency (GHz)
Output Power vs. Input Power
90
f= 7.5GHz
VDS= 10V
IDS≅ 1.1A
39
80
38
70
Po
37
60
36
50
ηadd
35
40
34
30
33
20
32
10
31
0
21
23
25
27
Pin (dBm)
3
29
31
ηadd (%)
40
Po (dBm)
Po (dBm)
38
TIM7179-4UL
Power Dissipation vs. Case Temperature
30
P T (W)
20
10
0
0
40
80
1 20
16 0
20 0
Tc (℃)
IM3 vs. Output Power Characteristics
-20
VDS= 10V
IDS≅ 1.1A
f= 7.5GHz
Δf= 5MHz
IM3 (dBc)
-30
-40
-50
-60
21
23
25
27
29
Po(dBm), Single Carrier Level
4
31