MICROWAVE POWER GaAs FET
TIM7785-60SL
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
FEATURES
„ LOW INTERMODULATION DISTORTION
IM3=-45 dBc at Pout= 36.5dBm
Single Carrier Level
„ HIGH POWER
P1dB=48.0dBm at 7.7GHz to 8.5GHz
„ HIGH GAIN
G1dB=6.0dB at 7.7GHz to 8.5GHz
„ BROAD BAND INTERNALLY MATCHED FET
„ HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS
CHARACTERISTICS
Output Power at 1Db Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
Gain Flatness
Power Added Efficiency
3rd Order Intermodulation
Distortion
Drain Current
Channel Temperature Rise
( Ta= 25°C )
SYMBOL
P1dB
CONDITIONS
UNIT
dBm
MIN.
47.0
G1dB
VDS= 10V
f = 7.7 to 8.5GHz
IDSset≅9.5A
dB
5.0
6.0
⎯
A
dB
%
dBc
⎯
⎯
⎯
-42
13.2
15.0
±0.8
A
°C
⎯
⎯
⎯
⎯
11.8
100
UNIT
S
MIN.
MAX.
⎯
TYP.
20
V
-1.0
-1.8
-3.0
A
⎯
38
⎯
V
-5
⎯
⎯
°C/W
⎯
0.6
0.8
IDS1
ΔG
ηadd
IM3
IDS2
ΔTch
Two-Tone Test
Po=36.5dBm
(Single Carrier Level)
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
TYP. MAX.
48.0
⎯
⎯
36
-45
⎯
⎯
Recommended Gate Resistance(Rg) : 28 Ω (Max.)
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
Transconductance
Saturated Drain Current
IDSS
Gate-Source Breakdown
Voltage
Thermal Resistance
VGSO
CONDITIONS
VDS= 3V
IDS= 12.0A
VDS= 3V
IDS= 200mA
VDS= 3V
VGS= 0V
IGS= -1.0mA
Rth(c-c)
Channel to Case
Pinch-off Voltage
SYMBOL
gm
( Ta= 25°C )
VGSoff
⎯
‹ The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use.
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Aug. 2008
TIM7785-60SL
ABSOLUTE MAXIMUM RATINGS
( Ta= 25°C )
CHARACTERISTICS
SYMBOL
UNIT
RATING
Drain-Source Voltage
VDS
V
15
Gate-Source Voltage
VGS
V
-5
Drain Current
IDS
A
20
Total Power Dissipation (Tc= 25 °C)
PT
W
187.5
Channel Temperature
Tch
°C
175
Storage Temperature
Tstg
°C
-65 to +175
PACKAGE OUTLINE (2-16G1B)
Unit in mm
(1) Gate
(2) Source
(3) Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260°C.
2
TIM7785-60SL
RF PERFORMANCE
Pout(dBm)
Output Power (Pout) vs. Frequency
VDS=10V
49
IDS≅13.2A
Pin=42.0dBm
48
47
46
7.7
7.9
8.1
8.3
8.5
Frequency(GHz)
Output Power(Pout) vs. Input Power(Pin)
51
freq.=8.5GHz
49
VDS=10V
IDSset≅9.5A
80
Pout
Pout(dBm)
48
70
47
60
46
50
ηadd
45
40
44
30
43
20
42
10
38
40
42
Pin(dBm)
3
44
ηadd(%)
50
TIM7785-60SL
Power Dissipation(PT) vs. Case Temperature(Tc)
PT(W)
200
100
0
0
40
80
120
160
200
40
42
Tc( °C )
IM3 vs. Power Characteristics
-10
VDS=10V
IDSset≅9.5A
-20
freq.=8.5GHz
Δf=5MHz
IM3(dBc)
-30
-40
-50
-60
32
34
36
38
Pout(dBm) @Single carrier level
4