General purpose transistor (50V, 0.15A)
2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S
Dimensions (Unit : mm)
1.6
1.0
0.2
0.2
0.3
0.2
Each lead has same dimensions
0~0.1
0.55
0.15
0.9
0~0.1
0.1Min.
0~0.1
0.1Min.
Each lead has same dimensions
ROHM : SMT3
(1) Emitter
EIAJ : SC-59
(2) Base
JEDEC : SOT-346
(3) Collector
ROHM : UMT3
(1) Emitter
ROHM : EMT3
(1) Emitter
EIAJ : SC-70
(2) Base
EIAJ : SC-75A
(2) Base
JEDEC : SOT-323
(3) Collector
JEDEC : SOT-416
(3) Collector
Abbreviated symbol: B*
Abbreviated symbol: B*
2SC5658
Abbreviated symbol: B*
2SC1740S
(15Min.)
0.8
(2)
(3)
0.22
0.5
(1)
0.13
0~0.1
2±0.2
3±0.2
0.2
0.4 0.4
0.2
1.2
0.32
4±0.2
1.2
0.8
3Min.
0.3Min.
1.6
0.7
0.15
1.1
0.8
0.15
Structure
Epitaxial planar type
NPN silicon transistor
0.8
2.1
2.8
(2)
(3)
0.7
(1)
1.25
1.6
0.5 0.5
(1)
2.0
1.3
(2)
(3)
0.3
2.9
(2)
(3)
0.4
2SC4617
0.65 0.65
2SC4081
(1)
2SC2412K
0.95 0.95
1.9
Features
1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.)
2. Complements the 2SA1037AK / 2SA1576A /
2SA1774H / 2SA2029 / 2SA933AS.
0.45+0.15
−0.05
0.15Max.
2.5 +0.4
−0.1
5
0.5
+0.15
0.45 −
0.05
(1) (2) (3)
(1) Base
(2) Emitter
(3) Collector
ROHM : VMT3
ROHM : SPT
EIAJ : SC-72
(1) Emitter
(2) Collector
(3) Base
Abbreviated symbol: B*
* Denotes hFE
Absolute maximum (Ta=25C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
7
V
IC
0.15
A
Collector current
2SC2412K, 2SC4081
0.2
Collector power
2SC4617, 2SC5658
dissipation
2SC1740S
PC
0.15
W
0.3
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Electrical characteristics (Ta=25C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
BVCBO
60
−
−
V
IC=50μA
Collector-emitter breakdown voltage
BVCEO
50
−
−
V
IC=1mA
Emitter-base breakdown voltage
Conditions
BVEBO
7
−
−
V
IE=50μA
Collector cutoff current
ICBO
−
−
0.1
μA
VCB=60V
Emitter cutoff current
IEBO
−
−
0.1
μA
VEB=7V
DC current transfer ratio
hFE
120
−
390
−
VCE(sat)
−
−
0.4
V
Transition frequency
fT
−
180
−
MHz
Output capacitance
Cob
−
2
3.5
pF
Collector-emitter saturation voltage
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c 2009 ROHM Co., Ltd. All rights reserved.
○
1/3
VCE=6V, IC=1mA
IC/IB=50mA/5mA
VCE=12V, IE=−2mA, f=100MHz
VCE=12V, IE=0A, f=1MHz
2009.12 - Rev.C
2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S
Data Sheet
Packaging specifications and hFE
Taping
Package
Code
T146
T106
TL
T2L
TP
Basic ordering
unit (pieces)
3000
3000
3000
8000
5000
−
−
−
−
−
−
−
−
−
Type
hFE
2SC2412K
QR
2SC4081
QR
−
2SC4617
QR
−
−
2SC5658
QR
−
−
−
2SC1740S
QR
−
−
−
−
−
hFE values are classified as follows :
Item
Q
R
hFE
120 to 270
180 to 390
Electrical characterristic curves
COLLECTOR CURRENT : IC (mA)
10
2
1
25°C
−55°C
5
0.5
0.2
0.30mA
0.25mA
60
0.20mA
0.15mA
40
0.10mA
20
0.05mA
Fig.1
Fig.2
1.2
DC CURRENT GAIN : hFE
100
50
20
2
5
10 20
50 100 200
1.6
VCE=5V
25°C
200
−55°C
100
50
20
10
0.2
0.5 1
2
5
10 20
50 100 200
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs.
collector current ( Ι )
Fig.5 DC current gain vs.
collector current ( ΙΙ )
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c 2009 ROHM Co., Ltd. All rights reserved.
○
27μA
2/3
24μA
21μA
6
18μA
15μA
12μA
4
9μA
6μA
2
3μA
0
0
2.0
30μA
Ta=25°C
8
4
IB=0A
12
8
16
20
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3
Grounded emitter output
characteristics ( Ι )
Ta=100°C
VCE=5V
3V
1V
0.5 1
0.8
500
Ta=25°C
10
0.2
0.4
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Grounded emitter propagation
characteristics
200
10
IB=0A
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : VBE (V)
DC CURRENT GAIN : hFE
80
0
0.1
0
500
0.50mA
mA
0.45 A
0.40m
0.35mA
Ta=25°C
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
20
Ta=100°C
COLLECTOR CURRENT : IC (mA)
VCE=6V
COLLECTOR CURRENT : IC (mA)
100
50
Grounded emitter output
characteristics ( ΙΙ )
0.5
Ta=25°C
0.2
IC/IB=50
20
10
0.1
0.05
0.02
0.01
0.2
0.5 1
2
5
10
20
50 100 200
COLLECTOR CURRENT : IC (mA)
Fig. 6 Collector-emitter saturation
voltage vs. collector current
2009.12 - Rev.C
IC/IB=10
0.2
Ta=100°C
25°C
−55°C
0.1
0.05
0.02
0.01
0.2
0.5 1
2
5
10
20
50 100 200
0.5
0.2
0.05
0.02
0.01
0.2
Co
b
1
0.5
1
2
5
10
20
50
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE
: VEB (V)
Fig.10
Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
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c 2009 ROHM Co., Ltd. All rights reserved.
○
BASE COLLECTOR TIME CONSTANT : Cc·rbb' (ps)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE : Cib (pF)
Ta=25°C
f=1MHz
IE=0A
IC=0A
5
0.2
0.5 1
2
5
10
20
50 100
Ta=25°C
VCE=6V
500
200
100
50
−0.5 −1
−2
−5
−10 −20
−50 −100
EMITTER CURRENT : IE (mA)
Fig.9 Gain bandwidth product vs.
emitter current
Fig.8 Collector-emitter saturation
voltage vs. collector current (ΙΙ)
20
2
Ta=100°C
25°C
−55°C
COLLECTOR CURRENT : IC (mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current ( Ι )
Cib
IC/IB=50
0.1
COLLECTOR CURRENT : IC (mA)
10
Data Sheet
TRANSITION FREQUENCY : fT (MHz)
0.5
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S
Ta=25°C
f=32MHZ
VCB=6V
200
100
50
20
10
−0.2
−0.5
−1
−2
−5
−10
EMITTER CURRENT : IE (mA)
Fig.11 Base-collector time constant
vs. emitter current
3/3
2009.12 - Rev.C
Notice
Notes
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illustrate the standard usage and operations of the Products. The peripheral conditions must
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Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
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The technical information specified herein is intended only to show the typical functions of and
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