Ordering number : EN7364B
30C02MH
Bipolar Transistor
30V, 0.7A, Low VCE(sat) NPN Single MCPH3
http://onsemi.com
Applications
•
Low-frequency Amplifier, high-speed switching, small motor drive
Features
•
•
•
•
•
Large current capacity
Low collector-to-emitter saturation voltage (resistance)) : RCE(sat) typ=330mΩ [IC=0.7A, IB=35mA]
Ultrasmall package facilitates miniaturization in end products
Small ON-resistance (Ron)
Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Conditions
Ratings
VCBO
VCEO
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
VEBO
IC
ICP
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
PC
Tj
Storage Temperature
Tstg
Unit
40
V
30
V
5
700
When mounted on ceramic substrate (600mm2×0.8mm)
V
mA
1.4
A
600
mW
150
°C
-55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7019A-004
• Package
: MCPH3
• JEITA, JEDEC
: SC-70, SOT-323
• Minimum Packing Quantity : 3,000 pcs./reel
0.25
30C02MH-TL-E
30C02MH-TL-H
0.15
2.0
Packing Type : TL
1.6
2.1
0 to 0.02
CL
LOT No.
LOT No.
3
Marking
0.65
2
Electrical Connection
0.3
3
0.07
0.85
0.25
TL
1
1 : Base
2 : Emitter
3 : Collector
MCPH3
Semiconductor Components Industries, LLC, 2013
August, 2013
1
2
71812 TKIM/60210EA TKIM TC-00002359/O2203 TSIM TA-100141 No.7364-1/6
30C02MH
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
Ratings
Conditions
min
typ
ICBO
IEBO
VCB=30V, IE=0A
VEB=4V, IC=0A
VCE=2V, IC=50mA
Gain-Bandwidth Product
hFE
fT
VCE=10V, IC=50mA
540
Output Capacitance
Cob
3.3
Collector-to-Emitter Saturation Voltage
VCE(sat)
VBE(sat)
VCB=10V, f=1MHz
IC=200mA, IB=10mA
Emitter Cutoff Current
DC Current Gain
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
300
IC=200mA, IB=10mA
Unit
max
100
nA
100
nA
800
MHz
pF
85
190
mV
0.9
1.2
V
V(BR)CBO
V(BR)CEO
IC=10μA, IE=0A
40
V
IC=1mA, RBE=∞
30
V
V(BR)EBO
ton
IE=10μA, IC=0A
5
tstg
tf
See specified Test Circuit.
V
35
ns
255
ns
40
ns
Switching Time Test Circuit
IB1
PW=20μs
D.C. ≤1%
OUTPUT
IB2
INPUT
RB
VR
RL
50Ω
+
470μF
+
220μF
VBE= --5V
VCC=12V
IC=20IB1= --20IB2=300mA
Ordering Information
Package
Shipping
memo
30C02MH-TL-E
Device
MCPH3
3,000pcs./reel
Pb Free
30C02MH-TL-H
MCPH3
3,000pcs./reel
Pb Free and Halogen Free
IC -- VCE
A
1mA
400μA
200
200μA
100
0
0
500
400
300
200
--25°C
2mA
600
Ta=7
5°C
25°C
3mA
700
Collector Current, IC -- mA
15m
5mA
400
300
VCE=2V
7mA
30m
500
A
10m
IC -- VBE
800
50m
Collector Current, IC -- mA
600
A 20mA
A
700
100
IB=0A
100
200
300
400
500
600
700
800
Collector-to-Emitter Voltage, VCE -- mV
900
1000
IT05082
0
0
0.2
0.4
0.6
0.8
Base-to-Emitter Voltage, VBE -- V
1.0
IT05083
No.7364-2/6
30C02MH
hFE -- IC
1000
VCE=2V
DC Current Gain, hFE
7
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Ta=75°C
25°C
5
--25°C
3
2
100
1.0
2
3
2
5 7 10
3
2
5 7 100
3
3
2
°C
25
7
5°C
=7
Ta
5°C
--2
2
10
1.0
2
5 7 10
3
2
3
5 7 100
2
Gain-Bandwidth Product, fT -- MHz
Output Capacitance, Cob -- pF
5
3
2
5
7
2
10
3
Collector-to-Base Voltage, VCB -- V
ON Resistance, Ron -- Ω
1kΩ
3
IB
2
1.0
7
5
3
2
0.1
0.1
2
3
5
7
1.0
2
Base Current, IB -- mA
3
5
7
2
3
5 7 100
2
10
IT06793
3
5 7 1000
IT05085
5
3
2
1.0
Ta=--25°C
7
5
75°C
25°C
3
2
2
3
5 7 10
2
3
5 7 100
2
3
fT -- IC
5 7 1000
IT05087
VCE=10V
7
5
3
2
2
3
5 7 10
2
3
5 7 100
2
Collector Current, IC -- mA
PC -- Ta
3
5 7 1000
IT05089
When mounted on ceramic substrate
(600mm2×0.8mm)
OUT
IN
5
5 7 10
700
1kΩ
f=1MHz
3
IC / IB=20
IT05088
Collector Dissipation, PC -- mW
7
2
VBE(sat) -- IC
100
1.0
5
Ron -- IB
10
3
2
1000
7
3
°C
Collector Current, IC -- mA
f=1MHz
2
5
--2
10
7
5
IT05086
Cob -- VCB
1.0
1.0
7
Ta=
0.1
1.0
5 7 1000
3
Collector Current, IC -- mA
10
5°C
3
2
7
5
3
°C
25
10
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
7
5
100
7
5
Collector Current, IC -- mA
IC / IB=50
100
3
2
IT05084
VCE(sat) -- IC
1000
IC / IB=20
1.0
1.0
5 7 1000
Collector Current, IC -- mA
VCE(sat) -- IC
1000
7
5
600
500
400
300
200
100
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT05092
No.7364-3/6
30C02MH
Embossed Taping Specification
30C02MH-TL-E, 30C02MH-TL-H
No.7364-4/6
30C02MH
Outline Drawing
30C02MH-TL-E, 30C02MH-TL-H
Land Pattern Example
Mass (g) Unit
0.007 mm
* For reference
Unit: mm
2.1
0.6
0.4
0.65 0.65
No.7364-5/6
30C02MH
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PS No.7364-6/6