Ordering number : ENA0435A
2SC6099
Bipolar Transistor
http://onsemi.com
100V, 2A, Low VCE(sat), NPN Single TP/TP-FA
Applications
•
DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter
Features
•
•
•
Adoption of FBET, MBIT process
Low collector-to-emitter saturation voltage
High allowable power dissipation
Large current capacity
High-speed switching
•
•
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Conditions
Ratings
VCBO
VCES
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
VCEO
VEBO
IC
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
ICP
IB
Base Current
Unit
120
V
120
V
100
V
6.5
V
2
A
3
400
A
mA
Continued on next page.
Package Dimensions unit : mm (typ)
Package Dimensions unit : mm (typ)
7518-003
7003-003
0.5
0.6
1
2
2.3
7.5
0.5
3
2.3
0.6
1 : Base
2 : Collector
3 : Emitter
4 : Collector
1
2
2.5
0.8
0.8
1.6
0.85
1.2
1.2
5.5
0.85
0.7
3
0 to 0.2
1.2
2.3
2SC6099-TL-E
0.5
1.5
1.5
4
7.0
5.5
4
2.3
6.5
5.0
2SC6099-E
0.5
7.0
2.3
6.5
5.0
2.3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
TP-FA
TP
Product & Package Information
• Package : TP
• JEITA, JEDEC : SC-64, TO-251
• Minimum Packing Quantity : 500 pcs./bag
Marking
(TP, TP-FA)
• Package : TP-FA
• JEITA, JEDEC : SC-63, TO-252
• Minimum Packing Quantity : 700 pcs./reel
Packing Type (TP-FA) : TL
Electrical Connection
2,4
C6099
1
LOT No.
TL
3
Semiconductor Components Industries, LLC, 2013
September, 2013
80812 TKIM/62006EA MSIM TB-00002424 No. A0435-1/9
2SC6099
Continued from preceding page.
Parameter
Symbol
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Conditions
Ratings
Tc=25°C
Unit
0.8
W
15
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
ICBO
IEBO
hFE
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
Ratings
min
typ
VCE=5V, IC=100mA
300
VCE=10V, IC=300mA
VCE(sat)
VBE(sat)
Unit
max
VCB=80V, IE=0A
VEB=4V, IC=0A
fT
Cob
Output Capacitance
Conditions
1
μA
1
μA
600
300
VCB=10V, f=1MHz
IC=1A, IB=100mA
MHz
13
pF
110
165
mV
0.9
1.2
V
IC=1A, IB=100mA
IC=10μA, IE=0A
120
V
IC=100μA, RBE=0Ω
120
V
V(BR)CEO
V(BR)EBO
ton
IC=1mA, RBE=∞
IE=10μA, IC=0A
100
V
tstg
tf
See specified Test Circuit.
V(BR)CBO
V(BR)CES
6.5
V
40
ns
1100
ns
40
ns
Switching Time Test Circuit
IB1
PW=20μs
D.C.≤1%
INPUT
OUTPUT
IB2
VR10
RB
RL
50Ω
+
100μF
VBE= --5V
+
470μF
VCC=50V
IC=10IB1= --10IB2=0.5A
Ordering Information
Device
2SC6099-E
2SC6099-TL-E
Package
Shipping
TP
500pcs./bag
TP-FA
700pcs./reel
memo
Pb Free
No. A0435-2/9
2SC6099
IC -- VCE
A
1.4
20mA
1.2
1.0
10mA
0.8
5mA
0.6
2mA
0.4
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Collector-to-Emitter Voltage, VCE -- V
1.0
0.8
0.6
0
0
1.0
Gain-Bandwidth Product, f T -- MHz
Ta=75°C
25°C
--25°C
2
100
7
5
3
2
0.01
2
3
5
7
2
0.1
3
5
7
1.0
Collector Current, IC -- A
2
f=1MHz
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
10
7
5
100
7
5
3
2
3
5
7
2
0.1
3
5
7
2
1.0
IT11118
VCE(sat) -- IC
IC / IB=10
0.1
7
5
°C
75
Ta=
3
5
--2
2
°C
C
25°
0.01
7
5
2
3
5 7 1.0
2
3
5 7 10
2
3
Collector-to-Base Voltage, VCB -- V
3
0.01
5 7 100
IT11119
Collector Current, IC -- A
7
25°C
5
2
3
5
7 0.1
75°C
2
3
5
Collector Current, IC -- A
7 1.0
2
3
IT11121
5
7 0.1
2
3
5
7 1.0
2
ICP=3A
<10μs
10
IC=2A
1.0
7
5
3
2
10
DC
50
ms
0m
1m
s
0μ
s
s
op
era
tio
0.1
7
5
3
2
0.01
7
5
3
2
3
IT11128
s
0μ
10
2
Ta= --25°C
3
ASO
7
5
3
2
IC / IB=10
1.0
2
Collector Current, IC -- A
VBE(sat) -- IC
3
3
0.01
2
2
2
3
0.1
3
Collector Current, IC -- A
7
1.2
IT11126
VCE=10V
3
3
1.0
5
IT11127
5
0.8
f T -- IC
2
0.01
3
Cob -- VCB
100
0.6
7
7
3
0.4
Base-to-Emitter Voltage, VBE -- V
VCE=5V
5
0.2
IT11125
hFE -- IC
1000
DC Current Gain, hFE
1.2
0.2
IB=0mA
0
Output Capacitance, Cob -- pF
1.4
0.4
0.2
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
1.6
--25°C
40mA
C
100
1.6
VCE=5V
1.8
25°C
mA
80m
Collector Current, IC -- A
Collector Current, IC -- A
1.8
IC -- VBE
2.0
60mA
Ta=7
5°
2.0
n
Ta=25°C
Single Pulse
0.001
0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
5 7 100
2
IT11129
Collector-to-Emitter Voltage, VCE -- V
No. A0435-3/9
2SC6099
ASO
3
0.8
s
10
s
s
0m
3
DC
2
on
rati
ope
Collector Current, IC -- A
m
s
1m
1.0
7
5
0μ
μs
10
IC=2A
100
50
2
0.1
7
5
3
2
2
3
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Tc=25°C
Single Pulse
0.01
0.1
PC -- Ta
0.9
<10μs
ICP=3A
Collector Dissipation, PC -- W
5
0
5 7 1.0
2
3
5 7 10
2
3
Collector-to-Emitter Voltage, VCE --
5 7 100
2
V IT11130
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT11131
PC -- Tc
17.5
Collector Dissipation, PC -- W
15.0
12.5
10.0
7.50
5.00
2.50
0
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT11132
No. A0435-4/9
2SC6099
Taping Specification
2SC6099-TL-E
No. A0435-5/9
2SC6099
Outline Drawing
2SC6099-TL-E
Land Pattern Example
Mass (g) Unit
0.282 mm
Unit: mm
* For reference
7.0
7.0
2.5
2.0
1.5
2.3
2.3
No. A0435-6/9
2SC6099
Bag Packing Specification
2SC6099-E
No. A0435-7/9
2SC6099
Outline Drawing
2SC6099-E
Mass (g) Unit
0.315 mm
* For reference
No. A0435-8/9
2SC6099
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PS No. A0435-9/9