Ordering number : EN2019B
2SB1124/2SD1624
Bipolar Transistor
http://onsemi.com
(–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP
Applications
Voltage regulators, relay drivers, lamp drivers, electrical equipment
•
Features
Adoption of FBET, MBIT processes
Fast switching speed
•
•
•
•
Low collector-to-emitter saturation voltage
Large current capacity and wide ASO
Specifications ( ): 2SB1124
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Conditions
Ratings
VCBO
VCEO
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
VEBO
IC
ICP
Collector Current
Collector Current (Pulse)
Unit
(--)60
V
(--)50
V
(--)6
V
(--)3
A
(--)6
A
Continued on next page.
Package Dimensions
Product & Package Information
unit : mm (typ)
7007B-004
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
Top View
4.5
1.6
2.5
1.0
1
2
4.0
1.5
3
0.4
2SB1124S-TD-E
2SB1124S-TD-H
2SB1124T-TD-E
2SB1124T-TD-H
2SD1624S-TD-E
2SD1624S-TD-H
2SD1624T-TD-E
2SD1624T-TD-H
Packing Type: TD
TD
Marking
3.0
RANK
2SB1124
0.75
RANK
2SD1624
Electrical Connection
2
1 : Base
2 : Collector
3 : Emitter
Bottom View
LOT No.
BG
1.5
DG
0.5
LOT No.
0.4
PCP
Semiconductor Components Industries, LLC, 2013
September, 2013
1
2
1
3
2SB1124
3
2SD1624
80812 TKIM/O1003TN (KOTO)/92098HA (KT)/3307AT, TS No.2019-1/7
2SB1124 / 2SD1624
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
Unit
500
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
When mounted on ceramic substrate (250mm2×0.8mm)
mW
1.5
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
ICBO
IEBO
hFE1
VCE=(--)2V, IC=(--)100mA
hFE2
VCE=(--)2V, IC=(--)3A
fT
Cob
VCE=(--)10V, IC=(--)50mA
Collector-to-Base Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
typ
100*
max
Unit
(--)1
μA
(--)1
μA
560*
35
150
VCB=(--)10V, f=1MHz
IC=(--)2A, IB=(--)100mA
MHz
(39)25
pF
(--0.35)0.19
(--0.7)0.5
V
(--)0.94
(--)1.2
V
VCE=(--)2A, IC=(--)100mA
IC=(--)10μA, IE=0A
(--)60
V
IC=(--)1mA, RBE=∞
(--)50
V
V(BR)EBO
ton
IE=(--)10μA, IC=0A
(--)6
tstg
tf
See specified Test Circuit.
V(BR)CBO
V(BR)CEO
Collector-to-Emitter Breakdown Voltage
min
VCB=(--)40V, IE=0A
VEB=(--)4V, IC=0A
VCE(sat)
VBE(sat)
Base-to-Emitter Saturation Voltage
Ratings
Conditions
V
(70)70
ns
(450)650
ns
(35)35
ns
* ; The 2SB1124/2SD1624 are classified by 100mA hFE as follows :
Rank
R
S
T
U
hFE
100 to 200
140 to 280
200 to 400
280 to 560
Switching Time Test Circuit
PW=20μs
D.C.≤1%
INPUT
IB1
RB
OUTPUT
IB2
25Ω
VR
50Ω
+
100μF
--5V
+
470μF
25V
IC=10IB1= --10IB2=1A
For PNP, the polarity is reversed.
Ordering Information
Package
Shipping
memo
2SB1124S-TD-E
Device
PCP
1,00pcs./reel
Pb Free
2SB1124S-TD-H
PCP
1,00pcs./reel
Pb Free and Halogen Free
2SB1124T-TD-E
PCP
1,00pcs./reel
Pb Free
2SB1124T-TD-H
PCP
1,00pcs./reel
Pb Free and Halogen Free
2SD1624S-TD-E
PCP
1,00pcs./reel
Pb Free
2SD1624S-TD-H
PCP
1,00pcs./reel
Pb Free and Halogen Free
2SD1624T-TD-E
PCP
1,00pcs./reel
Pb Free
2SD1624T-TD-H
PCP
1,00pcs./reel
Pb Free and Halogen Free
No.2019-2/7
2SB1124 / 2SD1624
IC -- VCE
--5.0
mA
--4.5
Collector Current, IC -- A
--50mA
--2.5
--20mA
--1.5
--10mA
--1.0
--5mA
--0.5
0
--0.4
--0.8
--1.2
20mA
2.5
10mA
2.0
1.5
5mA
1.0
--2.0
0
--14
--1.8
mA
--12m
1.6
2.0
ITR08908
2SD1624
8mA
1.8
7mA
1.6
Collector Current, IC -- A
--8mA
--1.4
1.2
IC -- VCE
2.0
--10mA
--1.6
0.8
Collector-to-Emitter Voltage, VCE -- V
2SB1124
A
0.4
ITR08907
IC -- VCE
--2.0
IB=0
0
--1.6
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
40mA
3.0
0.5
IB=0
0
--6mA
--1.2
--1.0
--4mA
--0.8
--0.6
--2mA
--0.4
--0.2
6mA
1.4
5mA
1.2
4mA
1.0
3mA
0.8
0.6
2mA
0.4
1mA
0.2
IB=0
0
0
--2
--4
--6
--8
--10
--12
--14
--18
--20
0
6
8
Collector Current, IC -- A
--2.4
--2.0
Ta=7
5°C
25°C
--25°C
--1.6
--0.8
10
12
14
16
18
--0.4
20
ITR08910
IC -- VBE
3.2
2SD1624
VCE=2V
2.8
--1.2
4
Collector-to-Emitter Voltage, VCE -- V
2SB1124
VCE= --2V
--2.8
2
ITR08909
IC -- VBE
--3.2
IB=0
0
--16
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
3.5
2.4
2.0
1.6
Ta=
75°
25°C C
--25°
C
Collector Current, IC -- A
--3.5
--2.0
A
100m
80mA
60mA
4.0
mA
--100
--3.0
2SD1624
4.5
0
--20
--4.0
1.2
0.8
0.4
0
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
Base-to-Emitter Voltage, VBE -- V
--1.2
0
0.4
0.6
0.8
1.0
Base-to-Emitter Voltage, VBE -- V
2SD1624
VCE=2V
7
5
DC Current Gain, hFE
5
1.2
ITR08912
hFE -- IC
1000
2SB1124
VCE= --2V
7
0.2
ITR08911
hFE -- IC
1000
DC Current Gain, hFE
IC -- VCE
5.0
2SB1124
Ta=75°C
3
25°C
2
--25°C
100
7
3
2
--25°C
100
7
5
5
3
3
2
25°C
Ta=75°C
2
7 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
Collector Current, IC -- A
2
3
5
ITR08913
7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
Collector Current, IC -- A
2
3
5
ITR08914
No.2019-3/7
2SB1124 / 2SD1624
f T -- IC
7
3
2SD
162
4
2SB
1124
100
7
5
3
2
10
0.01
3
5
2
0.1
3
5
2
1.0
3
For PNP, the minus sign is omitted.
2
3
5
7
2
10
3
2
--100
5°C
--2
Ta=
C
75°
7
5
25°C
3
2
5
7 100
ITR08916
VCE(sat) -- IC
2SD1624
IC / IB=20
7
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
2
1000
3
5
3
2
100
7
5
25°C
C
Ta=75°
3
2
--25°C
10
7 --0.01
2
3
5
7 --0.1
2
3
5 7 --1.0
2
Collector Current, IC -- A
3
5
7 0.01
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
3
2
25°C
--25°C
7
Ta=75°C
5
3
7 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
Collector Current, IC -- A
3
ICP=6A
0m 10m s
s
s
2
1.0
DC
op
era
5
tio
n
3
2
0.1
Ta=25°C
Single pulse
For PNP, minus sign is omitted.
Mounted on a ceramic board (250mm2✕0.8mm)
5
3
2
3
5
7 1.0
2
3
5
7 10
2
3
Collector-to-Emitter Voltage, VCE -- V
5 7 1.0
2
3
5
ITR08918
5
3
2
1.0
25°C
Ta= --25°C
7
75°C
5
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
ITR08920
PC -- Ta
1.8
1m
10
3
Collector Current, IC -- A
2SB1124 / 2SD1624
IC=3A
3
2
2SD1624
IC / IB=20
ITR08919
Collector Dissipation, PC -- W
5
7 0.1
VBE(sat) -- IC
3
7 0.01
5
ASO
10
5
Collector Current, IC -- A
7
5
--1.0
3
10
2SB1124
IC / IB=20
7
2
ITR08917
VBE(sat) -- IC
--10
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
3
Collector-to-Base Voltage, VCB -- V
--10
Collector Current, IC -- A
2SB1
124
2SD
162
4
5
1.0
1.0
VCE(sat) -- IC
5
7
10
ITR08915
2SB1124
IC / IB=20
7
10
5
Collector Current, IC -- A
--1000
2
For PNP, the minus sign is omitted.
2
2SB1124 / 2SD1624
f=1MHz
3
5
2
Cob -- VCB
5
2SB1124 / 2SD1624
VCE=10V
Output Capacitance, Cob -- pF
Gain-Bandwidth Product, f T -- MHz
1000
2SB1124 / 2SD1624
1.6
1.5
M
1.4
1.2
ou
nt
ed
on
1.0
ac
er
am
0.8
0.6
0.5
0.4
No h
ic
bo
ar
d(
25
eat s
ink
0m
m2
✕
0.2
0.8
m
m
)
0
5
7 100
ITR08921
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
ITR08922
No.2019-4/7
2SB1124 / 2SD1624
Bag Packing Specification
2SB1124S-TD-E, 2SB1124S-TD-H, 2SB1124T-TD-E, 2SB1124T-TD-H, 2SD1624S-TD-E, 2SD1624S-TD-H,
2SD1624T-TD-E, 2SD1624T-TD-H
No.2019-5/7
2SB1124 / 2SD1624
Outline Drawing
Land Pattern Example
2SB1124S-TD-E, 2SB1124S-TD-H, 2SB1124T-TD-E, 2SB1124T-TD-H, 2SD1624S-TD-E, 2SD1624S-TD-H,
2SD1624T-TD-E, 2SD1624T-TD-H
Mass (g) Unit
0.058 mm
Unit: mm
* For reference
0.9
2.2
3.7
45°
45°
1.0
1.8
1.5
1.0
1.5
3.0
No.2019-6/7
2SB1124 / 2SD1624
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PS No.2019-7/7