Ordering number : EN2114C
2SB1205
Bipolar Transistor
http://onsemi.com
–20V, –5A, Low VCE(sat), PNP Single TP/TP-FA
Applications
•
Flash, voltage regulators, relay drivers, lamp drivers
Features
•
•
•
• Low saturation voltage
Adoption of FBET, MBIT processes
• Large current capacity
Fast switching speed
Small and slim package making it easy to make 2SB1205-applied sets smaller
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Conditions
Ratings
VCBO
VCEO
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
VEBO
IC
ICP
Collector Current
Collector Current (Pulse)
Unit
--25
V
--20
V
--5
V
--5
A
--8
A
Continued on next page.
Package Dimensions unit : mm (typ)
Package Dimensions unit : mm (typ)
7518-003
7003-003
0.5
1.5
0.5
1
2
2.3
7.5
0.8
1.6
0.6
3
2.3
0.5
0.6
1 : Base
2 : Collector
3 : Emitter
4 : Collector
1
2
2.5
1.2
0.8
0.85
0.85
0.7
3
0 to 0.2
1.2
2.3
2SB1205S-TL-E
2SB1205T-TL-E
1.2
4
5.5
5.5
4
2.3
6.5
5.0
2SB1205S-E
2SB1205T-E
7.0
1.5
0.5
7.0
2.3
6.5
5.0
2.3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
TP-FA
TP
Product & Package Information
• Package : TP
• JEITA, JEDEC : SC-64, TO-251
• Minimum Packing Quantity : 500 pcs./bag
Marking
(TP, TP-FA)
• Package : TP-FA
• JEITA, JEDEC : SC-63, TO-252
• Minimum Packing Quantity : 700 pcs./reel
Packing Type (TP-FA) : TL
Electrical Connection
2,4
B1205
RANK
LOT No.
1
TL
3
Semiconductor Components Industries, LLC, 2013
September, 2013
D0512 TKIM TC-00002845/N2503TN (KT)/92098HA (KT)/8219MO/4137KI/4116KI, TS No.2114-1/9
2SB1205
Continued from preceding page.
Parameter
Symbol
Base Current
Conditions
Ratings
IB
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Tc=25°C
Unit
--0.5
A
1
W
10
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
Conditions
ICBO
IEBO
hFE1
VCE=--2V, IC=500mA
Gain-Bandwidth Product
hFE2
fT
VCE=--2V, IC=--4A
VCE=--5V, IC=--200mA
Output Capacitance
Cob
Collector-to-Emitter Saturation Voltage
VCE(sat)
VBE(sat)
VCB=--10V, f=1MHz
IC=--3A, IB=--60mA
Emitter Cutoff Current
DC Current Gain
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
V(BR)CBO
V(BR)CEO
Ratings
min
typ
max
Unit
VCB=--20V, IE=0A
--500
nA
VEB=--4V, IC=0A
--500
nA
100*
400*
60
320
MHz
60
pF
--250
--500
--1.0
--1.3
mV
IC=--3A, IB=--60mA
IC=--10μA, IE=0A
--25
V
V
IC=--1mA, RBE=∞
--20
V(BR)EBO
ton
IE=--10μA, IC=0A
--5
tstg
tf
See specified Test Circuit.
V
V
40
ns
200
ns
10
ns
* : The 2SB1205 is classified by 500mA hFE as follows :
Rank
R
S
T
hFE
100 to 200
140 to 280
200 to 400
Switching Time Test Circuit
IB1
PW=20μs
D.C.≤1%
INPUT
OUTPUT
IB2
VR
RB
RL
50Ω
+
100μF
VBE=5V
+
470μF
VCC= --10V
IC=10IB1= --10IB2= --2A
Ordering Information
Device
2SB1205S-E
2SB1205T-E
Package
Shipping
TP
500pcs./bag
TP
500pcs./bag
2SB1205S-TL-E
TP-FA
700pcs./reel
2SB1205T-TL-E
TP-FA
700pcs./reel
memo
Pb Free
No.2114-2/9
2SB1205
IC -- VCE
From top
--100mA
--90mA
--80mA
--70mA
Collector Current, IC -- A
--4
--60
mA
--
--40mA
--30mA
--3
--20mA
--2
--10mA
--25mA
--20mA
--3
--15mA
--10mA
--2
IB=0
0
--0.2
--0.4
--0.6
--5mA
--1.0
0
--1
--2
--3
--4
--5
Collector-to-Emitter Voltage, VCE -- V
ITR09216
IC -- VBE
--6
IB=0
0
--0.8
Collector-to-Emitter Voltage, VCE -- V
ITR09217
hFE -- IC
1000
VCE= --2V
VCE= --2V
7
--5
5
DC Current Gain, hFE
Collector Current, IC -- A
--35mA
--30mA
--1
0
--4
--3
Ta=
75
25° °C
C
--25
°C
--2
--1
Ta=75°C
25°C
--25°C
3
2
100
7
5
3
2
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
Base-to-Emitter Voltage, VBE -- V
--1.2
5
2
--0.01
3
5
--0.1
2
3
5
2
--1.0
5
--10
ITR09219
Cob -- VCB
3
VCE= --5V
7
3
Collector Current, IC -- A
ITR09218
f T -- IC
1000
f=1MHz
2
5
Output Capacitance, Cob -- pF
Gain-Brandwidth Product, f T -- MHz
40mA
--4
--1
3
2
100
7
5
100
7
5
3
2
3
10
2
5
7 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
Collector Current, IC -- A
2
3
3
3
2
--100
7
25°C
Ta= --25°C
3
75°C
2
--1.0
2
3
5
7
2
--10
3
ITR09221
VBE(sat) -- IC
--10
IC / IB=50
Base-to-Emitter
Saturation Voltage, VBE(sat) -- mV
5
5
7
Collector-to-Base Voltage, VCB -- V
IC / IB=50
7
5
ITR09220
VCE(sat) -- IC
--1000
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
IC -- VCE
--5
--50mA
Collector Current, IC -- A
--5
7
5
3
2
--1.0
Ta= --25°C
25°C
7
75°C
5
3
--10
5
--0.01 2
3
5
--0.1
2
3
5
--1.0
Collector Current, IC -- A
2
3
5
--10
ITR09222
5
--0.01
2
3
5
--0.1
2
3
5
--1.0
Collector Current, IC -- A
2
3
5
--10
ITR09223
No.2114-3/9
2SB1205
ASO
DC
2
10
m
s
s
tio
n(
Ta
=
C)
5°
=2
Tc
n(
tio
era
op
op
era
--1.0
0m
s
3
10
1m
5
ICP= --8A
IC= --5A
DC
Collector Current, IC -- A
--10
25
°C
5
)
3
2
--0.1
5
Tc=25°C
Single pulse
3
--0.1
2
3
PC -- Ta
12
Collector Dissipation, PC -- W
2
10
8
6
4
2
No heat sink
1
0
5 7 --1.0
2
3
5
7 --10
2
Collector-to-Emitter Voltage, VCE -- V
3
5
ITR09224
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
ITR09225
No.2114-4/9
2SB1205
Taping Specification
2SB1205S-TL-E, 2SB1205T-TL-E
No.2114-5/9
2SB1205
Outline Drawing
2SB1205S-TL-E, 2SB1205T-TL-E
Land Pattern Example
Mass (g) Unit
0.282 mm
* For reference
Unit: mm
7.0
7.0
2.5
2.0
1.5
2.3
2.3
No.2114-6/9
2SB1205
Bag Packing Specification
2SB1205S-E, 2SB1205T-E
No.2114-7/9
2SB1205
Outline Drawing
2SB1205S-E, 2SB1205T-E
Mass (g) Unit
0.315 mm
* For reference
No.2114-8/9
2SB1205
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PS No.2114-9/9