CM100RX-12A
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
Six IGBTMOD™ + Brake
NX-Series Module
100 Amperes/600 Volts
AN
AH
AL
AK
AJ
R
AD
AL
AL
AM
AL
AM
AM
AK
A
D
E
F
G
AP
AJ
AT
AR
DETAIL "A"
AA(4 PLACES)
35
P
AUAL
12
11
10
TS
NM L KB
9
AVAL
8
7
R Q
U
V
AQ
AS
34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13
J
RQ
AL
AM
AM
H
AE
AL
6
36
P
5
1
2
3
AW
4
H
J
AF
AG
C
BC
BD
AC
BB
X
Y
Q
P
R
Z
W
Z
Z
P(35)
BE
DETAIL "B"
TH1
(11)
GUP(34)
B(4)
AB
(6 PLACES)
GVP(26)
EUP(33)
EVP(25)
TH2
(10)
GWP(18)
EWP(17)
U(1)
V(2)
W(3)
GUN(30)
GVN(22)
GWN(14)
EUN(29)
EVN(21)
EWN(13)
NTC
AL
GB(6)
DETAIL "A"
EB(5)
AZ
BA
AX
AY
DETAIL "B"
*ALL PIN DIMENSIONS WITHIN
A TOLERANCE OF ±0.5
N(36)
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
K
L
M
N
P
Q
R
S
T
U
V
W
X
Y
Z
AA
AB
AC
Rev. 3/09
Inches
5.39
3.03
Millimeters
136.9
77.1
0.67+0.04/-0.0217.0+1.0/-0.5
4.79
121.7
4.33±0.02 110.0±0.5
3.89
99.0
3.72
94.5
0.83
21.14
0.37
6.5
2.44
62.0
2.26
57.5
1.97±0.02 50.0±0.5
1.53
39.0
0.24
6.0
0.48
12.0
0.67
17.0
1.53
39.0
0.87
22.0
0.55
14.0
0.54
13.64
0.33
8.5
0.53
13.5
0.81
20.71
0.9
22.86
0.22 Dia.
5.5 Dia.
M5
M5
0.06
1.5
Dimensions
AD
AE
AF
AG
AH
AJ
AK
AL
AM
AN
AP
AQ
AR
AS
AT
AU
AV
AW
AX
AY
AZ
BA
BB
BC
BD
BE
Inches
0.51
0.12
0.21
0.49
0.81
0.30
0.28
0.15
0.45
0.14
0.16
0.78
0.03
0.27
0.16
0.61
0.60
0.46
0.04
0.02
0.29
0.05
0.49
0.17 Dia.
0.10 Dia. 0.08 Dia.
Millimeters
13.0
3.0
5.4
12.5
20.5
7.75
7.25
3.81
11.44
3.5
4.06
20.05
0.8
7.0
4.2
15.48
15.24
11.66
1.15
0.65
7.4
6.2
12.5
4.3 Dia.
2.5 Dia.
2.1Dia.
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of six IGBT Transistors in
a three phase bridge configuration
and a seventh IGBT with freewheel diode for dynamic braking.
All components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.
Features:
£ Low Drive Power
£ Low VCE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell
Ordering Information:
Example: Select the complete
module number you desire from
the table below -i.e.
CM100RX-12A is a 600V (VCES),
100 Ampere Six-IGBTMOD™ +
Brake Power Module.
Type
Current Rating
Amperes
VCES
Volts (x 50)
CM100
12
1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM100RX-12A
Six IGBTMOD™ + Brake NX-Series Module
100 Amperes/600 Volts
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Characteristics
SymbolCM100RX-12AUnits
Power Device Junction Temperature
Tj
-40 to 150
°C
Tstg
-40 to 125
°C
Mounting Torque, M5 Mounting Screws
—
31
in-lb
Mounting Torque, M5 Main Terminal Screws
—
31
in-lb
Module Weight (Typical)
—
330
Grams
Baseplate Flatness, On Centerline X, Y (See Below)
—
±0 ~ +100
µm
Storage Temperature
Isolation Voltage, AC 1 minute, 60Hz Sinusoidal
VISO 2500Volts
Inverter Sector
Collector-Emitter Voltage (G-E Short)
VCES 600Volts
Gate-Emitter Voltage (C-E Short)
VGES ±20Volts
Collector Current (TC = 75°C)*1IC
Peak Collector Current
(Pulse)*3I
Emitter Current (TC = 25°C)*1 Peak Emitter
Current*3I
100Amperes
CM
200Amperes
IE*2
100Amperes
*2
200Amperes
EM
Maximum Collector Dissipation (TC = 25°C)*1*4PC
400Watts
Brake Sector
Collector-Emitter Voltage (G-E Short)
VCES 600Volts
Gate-Emitter Voltage (C-E Short)
VGES ±20Volts
Collector Current (TC = 97°C)*1IC
50Amperes
Peak Collector Current (Pulse)*3ICM
100Amperes
Maximum Collector Dissipation (TC = 25°C)*1*4PC
280Watts
VRRM*2600Volts
Repetitive Peak Reverse Voltage (Clamp Diode Part)
Forward Current (TC = 25°C)*1IF*2
50Amperes
Forward Current (Pulse)*3IFM*2
100Amperes
*1 Case temperature (TC) and heatsink temperature (Tf) are defined on the surface of the baseplate and heatsink at just under the chip.
*2 IE, IEM, VEC, trr and Qrr represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
IF, IFM, IRRM, VFM and VRRM represent ratings and characteristics of the clamp diode.
*3 Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
*4 Junction temperature (Tj) should not increase beyond Tj(max) rating.
CHIP LOCATION (TOP VIEW)
BASEPLATE FLATNESS
MEASUREMENT POINT
Chip Location (Top View)
99.5
88.4
78.8
50.7
41.2
31.7
Y
NTC Thermistor
22.2
FWDi
0
0
0
34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13
UP
UP
36
UN
UN
VP
VP
WP
WN
WP
VN
12
Br
Th
11
9
8
WN
Br
3
30.4
7
6
41.2
4
96.8
41.2
22.2
+ : CONVEX
HEATSINK SIDE
2
21.3
10
5
1
0
VN
88.4
24.8
29.4
32.2
36.8
79.4
35
– : CONCAVE
50.7
X
31.7
+ : CONVEX
HEATSINK SIDE
– : CONCAVE
IGBT
Dimensions in mm (Tolerance: ±1mm)
2
Rev. 3/09
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM100RX-12A
Six IGBTMOD™ + Brake NX-Series Module
100 Amperes/600 Volts
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Inverter Sector
Characteristics
Collector Cutoff Current
Gate-Emitter Threshold Voltage
Gate Leakage Current
Collector-Emitter Saturation Voltage
Symbol
Test Conditions
Min.
Typ.
Max.
ICES
VCE = VCES, VGE = 0V
—
—
1.0
mA
VGE(th)
IC = 10mA, VCE = 10V
5
6
7
Volts
IGES
VGE = VGES, VCE = 0V
—
—
0.5
µA
VCE(sat)
IC = 100A, VGE = 15V, Tj = 25°C*5
—
1.7
2.1
Volts
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Total Gate Charge
QG
Units
IC = 100A, VGE = 15V, Tj = 125°C*5
—
1.9
—
Volts
IC = 100A, VGE = 15V, Chip
—
1.6
—
Volts
—
—
13.3
nF
VCE = 10V, VGE = 0V
—
—
1.4
nF
—
—
0.45
nF
VCC = 300V, IC = 100A, VGE = 15V
—
270
—
nC
—
—
100
ns
VCC = 300V, IC = 100A,
—
—
100
ns
Inductive
Turn-on Delay Time
td(on)
Load
Turn-on Rise Time
tr
Switch
Turn-off Delay Time
td(off)
VGE = ±15V,
—
—
300
ns
Time
Turn-off Fall Time
tf
RG = 6.2Ω, IE = 100A,
—
—
600
ns
Inductive Load Switching Operation
—
—
200
ns
—
4.8
—
µC
*2
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr*2
Emitter-Collector Voltage
VEC*2
IE = 100A, VGE = 0V, Tj = 25°C*5
—
2.0
2.8
Volts
IE = 100A, VGE = 0V, Tj = 125°C*5
—
1.95
—
Volts
IE = 100A, VGE = 0V, Chip
—
1.9
—
Volts
Min.
Typ.
Max.
Units
Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
IGBT*1
Thermal Resistance, Junction to Case**
Rth(j-c)Q
Per
—
—
0.31
°C/W
Thermal Resistance, Junction to Case**
Rth(j-c)D
Per FWDi*1
—
—
0.59
°C/W
Rth(j-f)
Case to Heatsink (Per 1 Module)
—
0.015
—
°C/W
Contact Thermal Resistance**
Thermal Grease Applied*1*7
Internal Gate Resistance
RGint
External Gate Resistance
RG
TC = 25°C
—
0
—
Ω
6
—
62
Ω
**Thermal resistance values are per 1 element.
*1 Case temperature (TC) and heatsink temperature (Tf) are defined on the surface of the baseplate and heatsink at just under the chip.
*2 IE, IEM, VEC, trr and Qrr represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
IF, IFM, IRRM, VFM and VRRM represent ratings and characteristics of the clamp diode.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
Rev. 3/09
3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM100RX-12A
Six IGBTMOD™ + Brake NX-Series Module
100 Amperes/600 Volts
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Brake Sector
Characteristics
Collector Cutoff Current
Gate-Emitter Threshold Voltage
Gate Leakage Current
Collector-Emitter Saturation Voltage
Symbol
Test Conditions
Min.
Typ.
Max.
Units
ICES
VCE = VCES, VGE = 0V
—
—
1.0
mA
VGE(th)
IC = 5mA
5
6
7
Volts
IGES
VGE = VGES, VCE = 0V
—
—
0.5
µA
VCE(sat)
IC = 50A, VGE = 15V, Tj = 25°C*5
—
1.7
2.1
Volts
IC = 50A, VGE = 15V, Tj = 125°C*5
—
1.9
—
Volts
IC = 50A, VGE = 15V, Chip
—
1.6
—
Volts
—
—
9.3
nF
VCE = 10V, VGE = 0V
—
—
1.0
nF
Input Capacitance
Cies
Output Capacitance
Coes
Reverse Transfer Capacitance
Cres
Total Gate Charge
QG
Repetitive Reverse Current
IRRM*2
Forward Voltage Drop
VFM*2
—
—
0.3
nF
VCC = 300V, IC = 50A, VGE = 15V
—
200
—
nC
VR = VRRM
—
—
1.0
mA
IF = 50A, Tj = 25°C*5
—
2.0
2.8
Volts
IF = 50A, Tj = 125°C*5
—
1.95
—
Volts
—
1.9
—
Volts
IF = 50A, Chip
Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case**
Rth(j-c)Q
Per IGBT*1
—
—
0.44
°C/W
Thermal Resistance, Junction to Case**
Rth(j-c)D
Per FWDi*1
—
—
0.85
°C/W
Rth(j-f)
Case to Heatsink (Per 1 Module)
—
0.015
—
°C/W
—
0
—
Ω
13
—
125
Ω
Contact Thermal Resistance**
Thermal Grease
Internal Gate Resistance
RGint
External Gate Resistance
RG
Applied*1*7
TC = 25°C
NTC Thermistor Sector, Tj = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Zero Power Resistance
R
TC = 25°C*1
4.85
5.00
5.15
kΩ
Deviation of Resistance
∆R/R
–7.3
—
+7.8
%
—
3375
—
K
—
—
10
mW
B Constant
Power Dissipation
B(25/50)
P25
TC = 100°C, R100 =
493Ω*1
B = (InR1 – InR2) / (1/T1 – 1/T2)*6
TC =
25°C*1
**Thermal resistance values are per 1 element.
*1 Case temperature (TC) and heatsink temperature (Tf) are defined on the surface of the baseplate and heatsink at just under the chip.
*2 IE, IEM, VEC, trr and Qrr represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
IF, IFM, IRRM, VFM and VRRM represent ratings and characteristics of the clamp diode.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
4
Rev. 3/09
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM100RX-12A
Six IGBTMOD™ + Brake NX-Series Module
100 Amperes/600 Volts
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(INVERTER PART - TYPICAL)
200
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
15
150
11
100
50
10
8
9
0
2
4
6
8
1.0
0.5
50
0
100
150
IC = 200A
6
IC = 100A
4
IC = 40A
2
0
200
6
8
10
12
14
16
18
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(INVERTER PART - TYPICAL)
CAPACITANCE VS. VCE
(INVERTER PART - TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(INVERTER PART - TYPICAL)
102
CAPACITANCE, Cies, Coes, Cres, (nF)
EMITTER CURRENT, IE, (AMPERES)
1.5
8
COLLECTOR-CURRENT, IC, (AMPERES)
102
0
1
2
3
101
Cies
100
Coes
Cres
10-1
100
101
102
103
102
td(on)
tf
td(off)
tr
VCC = 300V
VGE = ±15V
RG = 6.2Ω
Tj = 125°C
Inductive Load
101
100
101
102
103
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING TIME VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(INVERTER PART - TYPICAL)
GATE CHARGE VS. VGE
(INVERTER PART)
103
td(off)
tr
td(on)
102
101
100
VCC = 300V
VGE = ±15V
IC = 100A
Tj = 125°C
Inductive Load
101
GATE RESISTANCE, RG, (Ω)
102
REVERSE RECOVERY, Irr (A), trr (ns)
tf
20
VCC = 300V
VGE = ±15V
RG = 6.2Ω
Tj = 25°C
Inductive Load
102
101
101
20
104
VGE = 0V
10-2
10-1
4
103
SWITCHING TIME, (ns)
2.0
Tj = 25°C
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
Tj = 25°C
Tj = 125°C
Rev. 3/09
2.5
0
10
103
101
3.0
SWITCHING TIME, (ns)
0
10
VGE = 15V
Tj = 25°C
Tj = 125°C
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
3.5
Tj = 25°C
VGE = 20V
12
13
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(INVERTER PART - TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
OUTPUT CHARACTERISTICS
(INVERTER PART - TYPICAL)
Irr
trr
102
EMITTER CURRENT, IE, (AMPERES)
103
IC = 100A
16
VCC = 200V
VCC = 300V
12
8
4
0
0
100
200
300
400
GATE CHARGE, QG, (nC)
5
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
CM100RX-12A
Six IGBTMOD™ + Brake NX-Series Module
100 Amperes/600 Volts
SWITCHING LOSS, Eon, Eoff, (mJ/PULSE)
10-1
101
102
103
100
10-1
100
101
REVERSE RECOVERY
SWITCHING LOSS, Err, (mJ/PULSE)
VCC = 300V
VGE = ±15V
IE = 100A
Tj = 125°C
Inductive Load
100
10-1
100
Err
10-1
100
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')
Zth = Rth • (NORMALIZED VALUE)
REVERSE RECOVERY SWITCHING LOSS VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
101
101
10-2
102
10-3
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(INVERTER PART - TYPICAL)
10-2
10-3
Tj = 25°C
Tj = 125°C
100
10-1
101
10-2
2
3
FORWARD VOLTAGE, VF, (VOLTS)
6
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')
Zth = Rth • (NORMALIZED VALUE)
FORWARD CURRENT, IF, (AMPERES)
102
1
10-1
101
100
10-2
10-4
4
10-3
10-3
10-3
10-3
10-1
3.5
VGE = 15V
Tj = 25°C
Tj = 125°C
3.0
2.5
2.0
1.5
1.0
0.5
0
0
20
40
60
80
100
COLLECTOR-CURRENT, IC, (AMPERES)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(BRAKE PART - TYPICAL)
10-2
103
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(BRAKE PART - TYPICAL)
101
10-1
10-5
102
EMITTER CURRENT, IE, (AMPERES)
TIME, (s)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(BRAKE PART - TYPICAL)
0
10-1
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.31°C/W
(IGBT)
Rth(j-c) =
0.59°C/W
(FWDi)
GATE RESISTANCE, RG, (Ω)
100
Err
GATE RESISTANCE, RG, (Ω)
COLLECTOR CURRENT, IC, (AMPERES)
102
102
VCC = 300V
VGE = ±15V
RG = 6.2Ω
Tj = 125°C
Inductive Load
100
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
SWITCHING LOSS, Eon, Eoff, (mJ/PULSE)
VCC = 300V
VGE = ±15V
RG = 6.2Ω
Tj = 125°C
Inductive Load
Eon
Eoff
101
101
VCC = 300V
VGE = ±15V
IC = 100A
Tj = 125°C
Inductive Load
Eon
Eoff
REVERSE RECOVERY
SWITCHING LOSS, Err, (mJ/PULSE)
102
101
100
REVERSE RECOVERY SWITCHING LOSS VS.
EMITTER CURRENT
(INVERTER PART - TYPICAL)
SWITCHING LOSS VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
SWITCHING LOSS VS.
COLLECTOR CURRENT
(INVERTER PART - TYPICAL)
100
101
10-1
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.44°C/W
(IGBT)
Rth(j-c) =
0.85°C/W
(FWDi)
10-2
10-5
10-4
10-3
10-3
TIME, (s)
Rev. 3/09