Nanotechnology Defining Dimension: Involves products and processes with significant features 100 nanometers and smaller. (To be listed in Merrill Lynch nanotechnology index, a company must indicate in a public document that nanotechnology initiatives are a significant component of their business strategy) Significant because of unusual properties: Mechanical – very strong; new devices (e.g., motor) Physics – new phenomena (e.g., metallic or semiconducting) Chemical – Reactivity, tiny hollow structures (e.g., can carry drugs into body) EE42/100, Spring 2006 Week 15, R. White 1 Nanotech examples Uses demonstrated: Electrostaically driven nanomotor (Alex Zettl, UCB Physics) Field effect transistors and logic devices (Ph. Avouris, Nano-Letters 16 Aug. 2001) – NOR gate, flip-flop memory cell, ring oscillator) Sensors (Nanometrix Co.) – hydrogen sensing by palladiumcoated silicon nanotube operating as an FET Liquid repellent cloth Cautions (research needed): “Gray goo” – if nanotech replicating structures are made they could take over the Earth Nanostructures can pass through/around cells in the body Nanostructures may clump in liquids and have limited uses in environmental remediation, drug delivery EE42/100, Spring 2006 Week 15, R. White 2 EE42/100, Spring 2006 Week 15, R. White 3 Synthesis of Nanowires (Some Examples) Sunkara et. al. Lieber et. al. Wang et. al. Fukui et. al. Yang et. al. 2 m Islam et. al. Xia et. al. Busbee et. al. Kamins et. al. Cao et. al. Samuelson et. al. Meyyappan et. al. Gundiah et. al. Ag, Au, Zn, InP, ZnO, Si, Ge, Si-Ge, SiGeC, GaAs, ZnS, GaN, InGaAs, In2O3 and other materials …. EE42/100, Spring 2006 Week 15, R. White 4 8. Nanoelectronics Au Source Nanotube 1.4 nm SiO2 Drain p-type transistor (no intentional doping) I(on)/I(off)~105 High contact resistance Low transconductance EE42/100, Spring 2006 Week 15, R. White R. Martel et al. Apple. Phys. Lett. 73, 2447 (1998) Approved for Public Release, Distribution Unlimited 5 EE42/100, Spring 2006 Week 15, R. White 6 Nanotube inverter EE42/100, Spring 2006 Week 15, R. White 7 EE42/100, Spring 2006 Week 15, R. White 8 Getting rid of metallic nanotubes to make semiconductor devices EE42/100, Spring 2006 Week 15, R. White 9 EE42/100, Spring 2006 Week 15, R. White 10 EE42/100, Spring 2006 Week 15, R. White 11 GE solar EE42/100, Spring 2006 Week 15, R. White 12 Nanobatteries MEMS field applications require novel sources of power. Nanobatteries • Comparable energy densities to conventional batteries • Can be integrated into MEMS during the fabrication process • Variety of applications requiring minute power Representation of a bio-nanobattery using modified proteins for energy storage Nanobattery Schematic utilizing membrane pores to maintain electrolytes Nanobattery using droplets of electrolytes on top of “nanograss” to generate power EE42/100, Spring 2006 Week 15, R. White Approved for Public Release, Distribution Unlimited 13 EE42/100, Spring 2006 Week 15, R. White 14 EE42/100, Spring 2006 Week 15, R. White 15 EE42/100, Spring 2006 Week 15, R. White 16 10. Nanomanufacturing EE42/100, Spring 2006 Week 15, R. White Approved for Public Release, Distribution Unlimited 17 Simultaneous Growth of Nanowires and Connecting Electrodes Metal on Si surface Evaporation at 45o angle [111] Si Si SiO2 1. Metal deposition, metalsilicide formation 2. Growth of Nanowire Saif Islam EE42/100, Spring 2006 3. Nanowire Bridge et. al., Nanotechnology 15 (2004) L5–L8 Week 15, R. White 18 Connecting Nanostructures Bridging Nanowires Form trench and deposit catalyst Nanowire grows perpendicular to (111)-oriented sidewall Nanowire connects to opposite sidewall 2 µm 2 µm M. Saif Islam, S. Sharma, T. I. Kamins, and R. Stanley Williams, Nanotechnology 15, L5-L8 (May 2004) EE42/100, Spring 2006 Week 15, R. White 2 µm 19 Nano-Colonnades: Vertical Integration EE42/100, Spring 2006 Week 15, R. White 20 Fabrication of NanoColonnades (a) Catalysts deposition (b) Nanowire growth Top electrode Nanowire Insulating layer Catalysts Doped epi-layer Bottom electrode Insulating layer Insulating layer Nanocolonnades Metal contact Metal contact (c) Nanowire bridging EE42/100, Spring 2006 Week 15, R. White (d) With metal electrodes 21 Natural Colonnades: Stalagmites Top Electrode Bottom Electrode Colonnades form in both ways in the mountain caves Week 15, R. White 22 EE42/100, Spring 2006 Linear I-V characteristics 1.0 0.7 Current (mA) 0.5 V ~40 NWs 0.2 R 0.0 -0.2 -0.5 -0.7 -1.0 -4 -2 0 2 4 Voltage (V) I=~0.8mA to ~1.2mA 17/cm3 Doping = 4x10 EE42/100, Spring 2006 Week 15, R. White 23 Summary • First demonstration of a practical massively parallel self–assembly technique for interconnecting NWs Devices • Electrode of doped Si Electrode of doped Si Connections are single crystal, electrically ohmic and mechanically robust • A large array of nanoscale sensors are fabricated using only coarse optical lithography FUTURE WORK •Create junctions for diodes, LEDs, lasers, transistors •Grow GaAs and InP nanowires on Si •Explore other novel device applications EE42/100, Spring 2006 Week 15, R. White 24