PD -96300
IRLH5036PbF
HEXFET® Power MOSFET
VDS
RDS(on) max
(@VGS = 4.5V)
Qg (typical)
RG (typical)
ID
60
V
5.5
mΩ
44
1.2
nC
100
(@Tc(Bottom) = 25°C)
Ω
h
A
PQFN 5X6 mm
Applications
•
•
•
•
Secondary Side Synchronous Rectification
Inverters for DC Motors
DC-DC Brick Applications
Boost Converters
Features and Benefits
Features
Low RDSon (< 5.5 mΩ @ Vgs = 4.5V )
Low Thermal Resistance to PCB (< 0.5°C/W)
100% Rg tested
Low Profile (<0.9 mm)
results in
Industry-Standard Pinout
⇒
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Orderable part number
IRLH5036TRPBF
IRLH5036TR2PBF
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Benefits
Lower Conduction Losses
Enables better thermal dissipation
Increased Reliability
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Standard Pack
Form
Quantity
Tape and Reel
4000
Tape and Reel
400
Note
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
PD @TA = 25°C
PD @ TC(Bottom) = 25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
g
g
c
g
Max.
60
± 16
20
16
100
100
400
3.6
250
Units
0.029
-55 to + 150
W/°C
h
h
V
A
W
°C
Notes  through † are on page 8
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1
04/12/10
IRLH5036PbF
Static @ TJ = 25°C (unless otherwise specified)
BVDSS
∆ΒVDSS/∆TJ
RDS(on)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
VGS(th)
∆VGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
gfs
Qg
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Output Charge
Min.
60
–––
–––
–––
1.0
–––
–––
–––
–––
–––
109
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.07
3.7
4.6
–––
-6.6
–––
–––
–––
–––
–––
90
44
9.5
4.5
18
12
23
21
Max. Units
Conditions
–––
V VGS = 0V, ID = 250uA
––– V/°C Reference to 25°C, ID = 1.0mA
4.4
VGS = 10V, ID = 50A
mΩ
5.5
VGS = 4.5V, ID = 50A
2.5
V
VDS = VGS, ID = 150µA
––– mV/°C
20
VDS = 60V, VGS = 0V
µA
VDS = 60V, VGS = 0V, TJ = 125°C
250
VGS = 16V
100
nA
-100
VGS = -16V
–––
S VDS = 25V, ID = 50A
–––
nC VGS = 10V, VDS = 30V, ID = 50A
66
–––
VDS = 30V
–––
VGS = 4.5V
nC
–––
ID = 50A
–––
–––
–––
nC VDS = 16V, VGS = 0V
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
1.2
23
48
28
15
5360
600
250
–––
–––
–––
–––
–––
–––
–––
–––
e
e
Ω
ns
pF
VDD = 30V, VGS = 4.5V
ID = 50A
RG=1.7Ω
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
Avalanche Characteristics
EAS
IAR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
c
Typ.
–––
–––
d
Units
mJ
A
Max.
286
50
Diode Characteristics
Parameter
Continuous Source Current
IS
ISM
VSD
trr
Qrr
ton
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
c
Min.
Typ.
Max. Units
–––
–––
100
–––
–––
h
400
A
Conditions
MOSFET symbol
showing the
integral reverse
D
G
p-n junction diode.
TJ = 25°C, IS = 50A, VGS = 0V
TJ = 25°C, IF = 50A, VDD = 30V
di/dt = 500A/µs
–––
–––
1.3
V
–––
28
42
ns
–––
134
201
nC
Time is dominated by parasitic Inductance
S
e
e
Thermal Resistance
RθJC (Bottom)
RθJC (Top)
RθJA
RθJA (<10s)
2
f
f
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Parameter
g
g
Typ.
–––
–––
–––
–––
Max.
0.5
15
35
22
Units
°C/W
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IRLH5036PbF
1000
1000
100
BOTTOM
VGS
15V
10V
4.5V
4.0V
3.3V
3.1V
2.9V
2.7V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
4.5V
4.0V
3.3V
3.1V
2.9V
2.7V
10
2.7V
1
100
BOTTOM
2.7V
10
≤60µs PULSE WIDTH
≤60µs PULSE WIDTH
Tj = 25°C
0.1
Tj = 150°C
1
0.1
1
10
100
0.1
V DS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
1000
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
10
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
T J = 150°C
10
T J = 25°C
1
VDS = 25V
≤60µs PULSE WIDTH
ID = 50A
VGS = 10V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.1
1.5
2.5
3.5
4.5
5.5
-60 -40 -20 0
Fig 4. Normalized On-Resistance Vs. Temperature
Fig 3. Typical Transfer Characteristics
100000
14
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
VGS, Gate-to-Source Voltage (V)
ID= 50A
C oss = C ds + C gd
10000
Ciss
1000
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
1
Coss
Crss
12
VDS= 48V
VDS= 30V
VDS= 12V
10
8
6
4
2
0
100
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage
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0
20
40
60
80
100
120
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage
3
IRLH5036PbF
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
T J = 150°C
100
T J = 25°C
10
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
100
1msec
10
10msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
0.1
1.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.10
1.6
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
10
100
Fig 8. Maximum Safe Operating Area
3.0
175
VGS(th) , Gate threshold Voltage (V)
Limited By Package
150
ID, Drain Current (A)
1
VDS, Drain-to-Source Voltage (V)
125
100
75
50
25
2.5
2.0
1.5
ID = 1.0A
ID = 1.0mA
ID = 150µA
1.0
0.5
0
25
50
75
100
125
-75 -50 -25
150
0
25
50
75 100 125 150
T J , Temperature ( °C )
T C , Case Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Case (Bottom) Temperature
Fig 10. Threshold Voltage Vs. Temperature
Thermal Response ( Z thJC ) °C/W
1
D = 0.50
0.20
0.1
0.10
0.02
0.01
0.05
0.01
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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12
1200
EAS , Single Pulse Avalanche Energy (mJ)
RDS(on), Drain-to -Source On Resistance (m Ω)
IRLH5036PbF
ID = 50A
ID
TOP
15A
18A
BOTTOM 50A
1000
10
8
T J = 125°C
6
4
T J = 25°C
2
800
600
400
200
0
2
4
6
8
10
12
14
16
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
V(BR)DSS
tp
15V
DRIVER
L
VDS
D.U.T
RG
+
V
- DD
IAS
20V
A
Fig 14a. Unclamped Inductive Test Circuit
VDS
VGS
RG
RD
Fig 14b. Unclamped Inductive Waveforms
VDS
90%
D.U.T.
+
-VDD
V10V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
Fig 15a. Switching Time Test Circuit
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I AS
0.01Ω
tp
10%
VGS
td(on)
tr
td(off)
tf
Fig 15b. Switching Time Waveforms
5
IRLH5036PbF
D.U.T
Driver Gate Drive
ƒ
+
‚
-
-
„
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+

RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D=
Period
P.W.
+
V DD
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
-
Body Diode
VDD
Forward Drop
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
L
DUT
0
1K
S
VCC
Vgs(th)
Qgs1 Qgs2
Fig 17. Gate Charge Test Circuit
6
Qgd
Qgodr
Fig 18. Gate Charge Waveform
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IRLH5036PbF
PQFN 5x6 Outline "B" Package Details
For footprint and stencil design recommendations, please refer to application note AN-1154 at
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 5x6 Outline "B" Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
PIN 1
IDENTIFIER
XXXX
XYWWX
XXXXX
PART NUMBER
(“4 or 5 digits”)
MARKING CODE
(Per Marking Spec)
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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7
IRLH5036PbF
PQFN 5x6 Outline "B" Tape and Reel
Qualification information†
Qualification level
Moisture Sensitivity Level
RoHS compliant
†
††
†††
Indus trial
(per JE DE C JE S D47F
PQFN 5mm x 6mm
††
†††
guidelines )
MS L1
†††
(per JE DE C J-S T D-020D
)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 0.229mH, RG = 50Ω, IAS = 50A.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
„ Rθ is measured at TJ of approximately 90°C.
When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
† Calculated continuous current based on maximum allowable junction temperature. Package is limited to 100A by production
test capability
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.04/2010
8
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