MSEG 803 Equilibria in Material Systems 11: Phase Transition Prof. Juejun (JJ) Hu hujuejun@udel.edu Ehrenfest classification of phase transitions First order phase transition Transitions that exhibit a discontinuity in the first derivative of TD potential with respect to some thermodynamic variable Boiling: liquid-vapor phase transition G G S V T P Both S and V are discontinuous in liquid-vapor transitions Second order phase transition Transitions that are continuous in the first order derivative of TD potential discontinuous (divergent) in a second derivative Second order derivatives: Cp 2G S 2 T T T P 2G M 2 H H T Equilibrium between phases At constant T and P : 1 2 For a single phase, stable system: dG = - SdT + VdP G S 0 T Cp 2G S 0 2 T T T P G V 0 P 2G V V T 0 2 P P T G G T P Gibbs free energy of phases G S v Sl S s Vapor Gv Gl Gs T T T At Tm, Gl Gs H l Tm Sl H s Tm Ss H m Tm Sm Liquid Solid Ts Tm Tb T Calculating phase transition temperature At 293 K, the enthalpy and entropy changes during the vapor-liquid phase transition of water is 44.17 kJ/mol and 119.5 J/mol·K-1, respectively. Estimate Tb of water. G T S G293K H 293K T S293K 9.16kJ / mol At boiling point, G = 0 Gb G293 K Tb 293K G ~ G293 K Tb 293K S293 K G293 K Tb ~ 293K 370 K S 293 K T 0 Deviation from 373 K due to: S cP 0 T T Phase diagram (CO2) Critical point Triple point Phase diagram (H2O) Negative slope Slope of P-T coexistence lines a b Along the coexistence curve dG = 0, i.e. G1 G1 , G2a G2b dG1a 2 S a dT1 2 V a dP1 2 a b a b V V dP S S 12 dT12 b b b dG1 2 S dT12 V dP12 dP S H dT V T V Clapeyron equation P P a a 1 b T 2 b T Ice melting under pressure A bag of mass M = 8 kg are hung by a rope over a rod of ice. The contact area between the rope and the ice rod is S = 20 mm2. The latent heat of fusion of water is 336 J/gram, the density of liquid water is 1 gram/cc and ice cubes float with ~ 0.8 of their volume submerged. Calculate the melting point of ice under the rope. Solution: 336 18 J / mol dP H 6 4.9 10 Pa / K 6 3 dT T V 273K 4.5 10 m / mol Mg P 4 106 Pa S Tm 0.8 C dP T P 0.8 K dT Ice melts faster under high pressure Clapeyron equation The impact of pressure on phase transition temperature is most significant for liquid-vapor transition If you try to cook an egg in boiling water while camping in the Rocky Mountains at an elevation of 10,000 feet, you will find that it takes longer for the egg to cook because water boils at only 90oC at this elevation The coexistence curve between solid-liquid phases are almost perpendicular to the temperature axis Typical values: H s l ~ 10kJ / mol Vs l ~ 1cc / mol dP ~ 107 Pa / K ~ 102 atm / C dT Clausius-Clapeyron equation and vapor pressure Vapor-liquid phase transition Neglect the volume of liquid phase: Vv l Vv Assume the gas is ideal: PVv NRT Clausius-Clapeyron equation dP H H P H dT T V TVv NRT 2 d ln P H m 1 d R T P H m If H m is temperature-independent: ln 1 P2 R If H m H m T0 cP T T0 , P ln 1 P2 H m T0 cP T0 R 1 1 c T P ln 1 R T2 T1 T2 1 1 T2 T1 Generalized Clapeyron equation General system dU TdS yi dxi i Legendre transform: U TS yi xi d SdT xi dyi i i Generalized Clausius-Clapeyron equation dyi S H dT xi T xi Degrees of freedom in single component systems Variables in a single component system: T, P, and In a single phase system, can be written as a function of T and P (Gibbs-Duhem relation d sdT vdP ), thus the independent variables are T and P In a system containing two phases I and II, chemical equilibrium condition I II reduces the number of independent variables to 1 In a system containing three phases I, II and III, two chemical equilibrium conditions I II III leads to a unique set of T and P values (0 independent variables at the triple point) Gibbs Phase rule Consider a system containing r components and M phases in equilibrium. The complete set of variables are T, P, and x1, x2, … xr-1 for each phase, where xi is the molar fraction of the component i Only r-1 molar fractions are independent as xi 1 The total number f of variables are thus 2 + M·(r-1) Between each two phases I and II, chemical equilibrium holds for all r components giving r·(M-1) equations: 1I T , P, xi 1II T , P, xi , 2I 2II ,..., rI rII Thus the total number f of independent variables are: f 2 M r 1 r M 1 r M 2 Binary phase diagrams Variables: T, P, and x1 Usually plotted for constant P values: f r M 1 An excellent phase diagram library: http://www1.asminternational.org/asmenterprise/apd/ Categories Solid solution: two components completely miscible Eutectic Peritectic Solid solution 36% 66% Calculating phase composition Lever rule 1 and 2 two phases coexist in a x-y two component system System composition: x component a%, y component (1-a)% Phase 1 composition: x component a1%, y component (1-a1)% Phase 2 composition: x component a2%, y component (1-a2)% The system contains phase 1 b1% and phase 2 b2% b1 a a1 b2 a2 a b1 b2 100 Example: 0.5 Si - 0.5 Ge alloy at 1200 °C a% = 50%, a1% = 36%, a2% = 66% b1 a a1 b2 a2 a b1 : b2 8 : 7 b1 53.3 b2 46.7 Eutectic liquidus solidus Eutectic Vapor-Liquid-Solid (VLS) growth of silicon nanowires Interface where growth continues Growth direction SiCl4 vapor + H2 Melted gold nano-particles saturated with SiH4 Substrate Substrate Heterogeneous nuleation of Si at the interface Temperature for Si deposition on a planar substrate (requires homogeneous nucleation): ~ 800 ˚C Diameter of nanowire is determined by the gold droplet size Nanowires formed by VLS growth Gold nanoparticle Growth direction “Germanium Nanowire Growth Below the Eutectic Temperature,” S. Kodambaka, J. Tersoff, M. C. Reuter, and F. M. Ross, Science 316, 729 (2007). Why gold? Reason #1: Low eutectic temperature Question: what would happen if we were to grow nanowires at high temperature? “The influence of the surface migration of gold on the growth of silicon nanowires,” Nature 440, 69-71 (2006). Why gold? Reason #2: Small gold solubility in Si (Eutectoid transformation) Question: why is such small solubility important? 99.8% Solubility: 0.2% Albert P. Levitt, Whisker Technology (1975). Tapering during nanowire growth “A Systematic Study on the Growth of GaAs Nanowires by MetalOrganic Chemical Vapor Deposition,” Nano Lett. 8, 4275-4282 (2008). Peritectic