Vertical ZnO Nanowire Field Effect Transistor
Evan C. Brown
Faculty Mentor: Jia “Grace” Lu
To fully utilize the scaling advantage of quasi-one-dimensional nanostructures, vertically grown ZnO
nanowires have been successfully fabricated, using DC and pulsed electrodeposition methods in a
highly ordered anodic aluminum template. An evaporated layer of titanium on one side of the
template serves as the working electrode in a standard three electrochemical cell. It is found that
pulsed electrodeposition grows Zn nanowires with a much higher filling factor and uniformity. The
ZnO nanowires were formed by thermally oxidizing the Zn nanowires. XRD spectra of increasing
oxidation time show that the as-grown Zn was gradually converted to ZnO. The electrical transport
property of individual nanowires was characterized with an atomic force microscope using
conductive probes. Vertically-aligned field effect transistors will be constructed, which will serve as
the building blocks for nanoscale memory and logic devices.
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Graduate student collaborators
Faculty advisor