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Communication Systems and Microsystems Lab.
G.Lissorgues / Assoc. Prof.
JL. Polleux / Assist. Prof
© G. Lissorgues / J.L. Polleux - ESYCOM - 5th April 2004
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ESIEE – ESYCOM
Outline of the presentation

Short presentation of ESIEE
 The Service for Microelectronics and Microsystems
 ESYCOM Laboratory
 Focus on RF MEMS activities
 Focus on Photonics and Microwaves activities
© G. Lissorgues / J.L. Polleux - ESYCOM - 5th April 2004
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
Short presentation of ESIEE
(4 slides)
© G. Lissorgues / J.L. Polleux - ESYCOM - 5th April 2004
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Short presentation of ESIEE
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EDUCATION
ESIEE= Center for scientific and engineering education,
created in 1904, depending on the Paris Chamber of
Commerce and Industry (CCIP)
Undergraduate (ESTE) and graduate (ESIEE) degree
programs
5 specialities in the engineer courses:
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Computer Science
Design and Control of Industrial systems
Electronics and Microelectronics
Signal Processing and Telecommunications
System-on-chip Design (Sophia-Antipolis)
© G. Lissorgues / J.L. Polleux - ESYCOM - 5th April 2004
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Short presentation of ESIEE
EDUCATION
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Some figures:
– ~ 85 faculty members
– ~ 25 PhD students
– ~ 120 graduated students (engineers) /year
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International partnerships:
– Ex: European Network for Training and Research in
Electrical Engineering (ENTREE)
– > 60% of the students have spent at least 3 months
abroad (Europe, USA, Canada, Japan, Singapore, South
Africa …)
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Local partnerships:
– Polytechnicum Marne-La-Vallée (with the University)
© G. Lissorgues / J.L. Polleux - ESYCOM - 5th April 2004
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Short presentation of ESIEE
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RESEARCH
6 Laboratories (4 technical Labs):
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Computer Algorithms and Architectures
Design and Control of Industrial systems
Electronics and Microelectronics
Signal Processing and Telecommunications
Languages and Management
Modelling and Numerical simulations
Academic partnerships
– PFM : research focused on Microsystems
– ESYCOM (ESIEE, UMLV, CNAM): Communication
circuits, Systems, and Microsystems
– Pôle Imagerie (ESIEE, UMLV, INA, ENPC, IGN, ENSG):
imaging research
© G. Lissorgues / J.L. Polleux - ESYCOM - 5th April 2004
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Short presentation of ESIEE
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RESEARCH
Fields of interest (based on the technical Labs):
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Micro technologies and Microsystems
Digital and analogue integrated circuits
HF, microwave, and optical devices
Digital radio communication circuits and systems
Signal and speech processing
Discrete structures and imaging (focus on medical and
biological imaging)
Digital architectures design
Modelling and optimisation, statistical models
Embedded systems
Hybrid system modelling and control
© G. Lissorgues / J.L. Polleux - ESYCOM - 5th April 2004
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
The Service for Microelectronics and Microsystems
(3 slides)
© G. Lissorgues / J.L. Polleux - ESYCOM - 5th April 2004
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The Service for Microelectronics
and Microsystems
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ESIEE Group Silicon Fab
Created in 1984
Services proposed:
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Prototyping
Process development
Microsystems fabrication
Back end facilities
Low volume production
Wafer bonding
300m² class 100 to 1000 clean room
8 full time Engineers and Technicians
Photolithography
Wafer size 100mm (up to 150mm if required)
Various substrates (Si, glass, Al2O3, AFK502…)
© G. Lissorgues / J.L. Polleux - ESYCOM - 5th April 2004
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The Service for Microelectronics
and Microsystems

ESIEE Group Silicon Fab
Fields of interest:
– Conception, fabrication and
characterisation of MEMS
– Micro-sensors, microactuators, dedicated to Optics,
RF, Fluidics…
– Development and optimisation
of technological specific
process steps
– Associated Integrated
electronics
Optical switches
Capacitive sensor
Systems
Vibrometry
Components
Technology and process
Magnetic field sensor
Physics, mechanics, CAO…
© G. Lissorgues / J.L. Polleux - ESYCOM - 5th April 2004
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The Service for Microelectronics
and Microsystems
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ESIEE Group Silicon Fab
Available Processes and Equipments
DRIE for SOI comb drive
– Dry and wet oxidation, doping furnaces
– LPCVD / PECVD film deposition (PolySi, SiO2, Si3N4)
– PVD metal deposition (sputtering and electron beam
evaporator): Au, Cr, Al
– UV photolithography, single and double side
– Wet etching
– Dry etching (DRIE, RIE – Cl or F)
– Back-end and packaging: wafer cutting,
2D photonic Cristal
wedge and ball bonding, wafer anodic bonding
© G. Lissorgues / J.L. Polleux - ESYCOM - 5th April 2004
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
ESYCOM
(6 slides)
© G. Lissorgues / J.L. Polleux - ESYCOM - 5th April 2004
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ESYCOM
 Communication Systems and Microsystems Team
Director: C. Rumelhard
• ESYCOM is a laboratory with staff and means overlapping 3
entities located in the eastern part of Paris
- ESIEE (Engineering School)
- University of Marne La Vallée
- CNAM
• Total size
Phd students: 20
Researchers + technical staff : 30 members
© G. Lissorgues / J.L. Polleux - ESYCOM - 5th April 2004
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ESYCOM
 Background
 1994: creation of DEA in High Frequency Communication
Systems, in cooperation with: UMLV, CNAM, ESIEE, INT Evry
 1996: creation of High Frequency Electronic Pole with
CNAM, ESIEE, UMLV within the « Polytechnicum de Marne
la Vallée »
 Jan. 1999: Label from the French Research Department for
2 years as “équipe d’accueil” (welcoming team) n° 2552
called Laboratoire Systèmes de Communication
 Jan. 2001: renewal of the label for 2 years
 Beginning of 2003, discussions and association with the
team of Microsystems and Micro-technologies from ESIEE
© G. Lissorgues / J.L. Polleux - ESYCOM - 5th April 2004
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Communication Systems and Microsystems
ESYCOM
CNAM, ESIEE, UMLV
Research Items
Electromagnetism and applications, UMLV, ESIEE
Digital wireless communications, ESIEE
Microsystems and micro-technologies, ESIEE, CNAM, UMLV
Photonic and microwaves, CNAM, ESIEE
High Frequency Measurements
Antennas, Propagation, EMC, UMLV
Characterisation of digital communication circuits and
systems in microwaves and optics, ESIEE
Opto-microwave characterisations, CNAM
MEMS technology, ESIEE (SMM)
© G. Lissorgues / J.L. Polleux - ESYCOM - 5th April 2004
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ESYCOM: Research topics
Item 1 : Electromagnetism and applications
- Numerical Modelling
- Propagation and EM compatibility
- Antennas and networks (RFID applications,
EBG applications)
b
G ro u n d P la n e
Lg
Ls
Le
Wg
le
ws
e
Sg
a
e
ls
Lg
Anechoic chamber
(900 MHz – 18 GHz)
Frequency diversity
Item 2 : Wireless digital communications
- Transmit/Receive architectures
- Signal and images coding, information
theory applications
Spectre du signal x(t) reçu par le badge
Zoom autour de 13.56 MHz
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12
13
fc-2fs fc-fs
raie non modulée
Porteuse à 13.56 MHz
14
fc
15
16
17 Fréquences en MHz
fc+fs
© G. Lissorgues / J.L. Polleux - ESYCOM - 5th April 2004
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ESYCOM: Research topics
Item 3 : Microsystems and micro-technologies
- Sensors, actuators and associated electronics
- RF and optical MEMS
2D photonic
Cristal
Item 4 : Photonics and microwaves
- Photonic and microwave components
- Microwave links in optics and monolithic circuits
© G. Lissorgues / J.L. Polleux - ESYCOM - 5th April 2004
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ESYCOM
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Technical Platforms
High frequency measurement facilities for:
– Digital communication circuits and systems using RF,
microwave, or optical carriers
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Opto-microwave test bench up to 18 GHz
On-wafer VNA probe station up to 40 GHz
– Radiation, propagation, and material measurements
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Anechoic chamber (900 MHz – 18 GHz)
DSP (Texas) application platform
CAD tools
– including ADS, HFSS, Ensemble for RF
– ANSYS for MEMS
© G. Lissorgues / J.L. Polleux - ESYCOM - 5th April 2004
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
RF MEMS
Team manager : G. Lissorgues, ESIEE
© G. Lissorgues / J.L. Polleux - ESYCOM - 5th April 2004
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RF MEMS
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RESEARCH TOPICS
Tunable passive micro-components, for
reconfigurable radiocommunication applications
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Micro-capacitors
Micro-inductors
Specifications: tuning ratio ~10, Freq. Range 1-10 GHz
Applications: tunable filters, matching networks, RF power
detection
MEMS based on transmission lines on Silicon
– Application to low losses microwave filters and antenna
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FBAR resonators
© G. Lissorgues / J.L. Polleux - ESYCOM - 5th April 2004
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RF MEMS
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PREVIOUS WORK
First work on RF MEMS initiated with TAS on the
Micro-modulator project (1997-2001)
– Application field: wireless sensor networks
– Frequency range: carrier between 1-2GHz
– Principle: micro mechanical mixing using 2 tunable
coupled capacitors
Sensor 1
DC Conversion
Power storage
antenna
Mixing providing
frequency
translation
Sensor 2
Ultra low
power
electronics
Sensor 3
Sensor N
© G. Lissorgues / J.L. Polleux - ESYCOM - 5th April 2004
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RF MEMS
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PREVIOUS WORK
The Micro-modulator project
– Carrier 1-2GHz
+ low data rate (100bps) modulation @ 10kHz
– SOI/glass process, with CPW access for VNA
measurements
– C(V²) and spectrum validation, typ. variation 0.5 to 1pF
HF in
HF in
Gnd
Principle
Prototype
3 mm
torsional
Silicon plate
Air gap
HF out
out
HF1
in
LF
in
LF
out
HF2
Glass
actuation
LF
GND
LF
© G. Lissorgues / J.L. Polleux - ESYCOM - 5th April 2004
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RF MEMS
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Tunable passive micro-components
Micro-capacitors
– 1 PhD student working for TAS
– Technology currently under development at EPFL
– Principle: mobile metallic conductor moving between
fragmented fixed electrodes
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•
•
a)
e
Expected ratio>10 with C~1pF
3D technology using Si etching and sacrificial layers
Good RF power handling capabilities
b)
Cmin
dielectric
r
d
C
Conductor moving
c)
forces
due to
RF signal
Cmax
d
R C  e
C0 ed
© G. Lissorgues / J.L. Polleux - ESYCOM - 5th April 2004
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RF MEMS
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Tunable passive micro-components
Micro-capacitors
metal 2
Actuation anchor
mobile conductor
RF OUT
RF IN
metal 1
RF electrodes
a) Cmin
b) Cmax
dielectric
Silicon Substrate
SEM view of electrodes
© G. Lissorgues / J.L. Polleux - ESYCOM - 5th April 2004
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RF MEMS
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Tunable passive micro-components
Tunable micro-inductors
– 1 PhD student working with TAS / Ministry of Defense
– Technology currently under development at ESIEE
– Principle: control of the magnetic coupling coefficient k
between 2 inductive circuits
• Electrostatic actuation of beam or membrane
• Mechanical displacement (15µm) of a loop above an inductor
2.5
Im(Z eq )
0
=L
ω
0
2
2
0
-9
k=0.98
k=0.9
k=0.8
k=0.75
L
R > L.w
1.5 Low freq
Leq (nH)
L eq =
 (kL ω) 
 1
R
+(L
ω)


2
2
x 10
High freq
R < L.w
1
L.(1-k²)
0.5
0
6
10
10
7
8
10
10
Freq (log scale)
9
10
10
© G. Lissorgues / J.L. Polleux - ESYCOM - 5th April 2004
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RF MEMS
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Tunable passive micro-components
Tunable micro-inductors
– First prototype (VNA measurements 0.5 – 5GHz)
ratio ~ 2 with L tuned from 1nH to 0.5nH
DC polarisation
LF electrode
beam
loop
micro-inductor
SOI / Glass Technology
© G. Lissorgues / J.L. Polleux - ESYCOM - 5th April 2004
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RF MEMS
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MEMS based transmission lines on Silicon
Inverted microstrip lines on silicon
– Frequency range 1 – 40GHz
– Typ. Attenuation <0.5dB/cm @ 30GHz
(depending on the air gap)
– Low cost Si/Glass technology developed at ESIEE
Line width
W
Si
Glass
GND width L
Inverted line
h=100m
Al
t=1µm
Transition Si/Glass
CPW on glass
Air gap
100µm
Openings
Si
Microstrip
line
Glass
© G. Lissorgues / J.L. Polleux - ESYCOM - 5th April 2004
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RF MEMS

MEMS based transmission lines on Silicon
Application to low loss microwave filters @30GHz
• Distributed Low-pass filter
• Coupled lines Band-pass filter
S12_meas
On-wafer probing
S11_meas
© G. Lissorgues / J.L. Polleux - ESYCOM - 5th April 2004
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RF MEMS
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Perspectives in RF MEMS @ ESIEE - ESYCOM
– Include the tunable components into reconfigurable
radio applications: adaptative matching network,
tunable delay lines, tunable filters
– Develop a specific high RF power test bench for MEMS
(Input ~30 dBm)
– New functions: power detection / limitation
– New applications around antennas: integrated antenna
on chip, controllable reflectarray, rectifying antenna…
– Work within “OPTIMISTIC” project on new optical
interconnections
© G. Lissorgues / J.L. Polleux - ESYCOM - 5th April 2004
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
Photonics and Microwaves
J.L. Polleux, ESIEE
Team manager : C. Rumelhard, CNAM
© G. Lissorgues / J.L. Polleux - ESYCOM - 5th April 2004
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Photonics and microwaves
RESEARCH TOPICS
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Microwave circuits in photonic links
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Modulator with rejection of LO and lower RF band
Narrow band opto-microwave detection circuits
Study of ad hoc networks in Ultra Wide Band
Ultra Wide Band circuits
Photonic and microwave components
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Optical Modulator Structures
Lateral Optical Resonant Cavities
Heterojunction Bipolar Phototransistors (InGaP/GaAs,
InP/InGaAs, Si/SiGe)
© G. Lissorgues / J.L. Polleux - ESYCOM - 5th April 2004
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Photonics and microwaves
RESEARCH TOPICS
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Simulation of optical links in microwaves
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Simulation with ADS: Models for lasers, optical fibres,
photodiodes, phototransistors…
Amplitude and phase noise around microwave signals
New method of modulation for Radio over Fibre
Experimental Measurements and Characterisation
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Generation of microwaves with beating of lasers
© G. Lissorgues / J.L. Polleux - ESYCOM - 5th April 2004
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Photonics and microwaves
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Microwave phototransistors & the SiGe HPT
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Opto amplifier InP/GaInAs at 30 GHz (1,55 µm)
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Opto-microwave Experimental Set-Up
© G. Lissorgues / J.L. Polleux - ESYCOM - 5th April 2004
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Photonics and microwaves
Microwave Phototransistors
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Physical modelling of HPT and materials
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Hydrodynamic balance energy and drift-diffusion models
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Technological development contribution
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HPT-based circuit design
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GaInP / GaAs (0,85 µm), Thales Technology
InP / GaInAs (1,55 µm), CNET then OPTO+/Alcatel
SiGe HPT (0,9 µm): ESYCOM / Ulm Univ., Germ.
© G. Lissorgues / J.L. Polleux - ESYCOM - 5th April 2004
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Photonics and microwaves
Physical Model for Strained SiGe layers
• Bandgap Reduction
1. Ge dependence (0.74.x eV)
2. Doping induced narrowing
3. Temperature dependence
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2D drift-diffusion simulator
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Influence of strain on parameters :
• Effective Density of States
1. Simple 2 terms equation
2. Fit to an analytical model
• Optical absorption
1. One-phonon model
2. Fit to Lang data
3. Ge, T, l dependence
• No mobility model as it is anisotropic
© G. Lissorgues / J.L. Polleux - ESYCOM - 5th April 2004
1st SiGe HPT – MWP 2003 Budapest
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Photonics and microwaves
SiGe HPT
• Square ring emitter contact
• Symmetric base contact
•Aluminum metallization
• RF base & collector pads
• Added substrate contact
Emitter contact and optical window
Base
10µm
Ge %
Collector
Sub-collector
© G. Lissorgues / J.L. Polleux - ESYCOM - 5th April 2004
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Photonics and microwaves
SiGe HPT
•Advantages of SiGe for photodetection :
 Enlargement of the wavelength detection range (0.8 to 1µm)
 Leverage for frequencies performances vs. dimensions
 Ease the optical coupling
x<30%, short-range applications, our choice
-1
Absorp. coeff. (cm )
104
0.8µm
10
Pure HBT : fT=30GHz (1µm emitter width)
HPT : fT=20.4GHz (despite 10x10µm² size)
3
0.98µm
102
1.1µm
1.2µm
x>40%
long
distances
1.3µm
101
1.55µm
10
0
0
0.1
0.2
0.3
germanium content, x
0.4
08_408
098_408
13_048
155_048
08_500
098_500
13_500
155_050
[80] 1.1µm
[80] 1.2µm
© G. Lissorgues / J.L. Polleux - ESYCOM - 5th April 2004
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Photonics and microwaves
SiGe HPT
Popt,RF (mW)
0.1 0.2
1
2
10
5
5
Rhpt=1.49A/W
-40
-45
0
0
-5
-5
-10
-50
-55
-60
-65
-10 -7
-30
-20
-10
1/2.R0.Popt² (dBm)
=
-10
-15
-15
-20
-20
-25
-25
-30
+10
0 +3
Popt,RF (dBm)
-20dB/dec
RHPT (dB)
-35
GOM (dB)
Tilt lines : Electrical Output Power (dBm)
-30
10
10
-30
8
10
Vce=1.5V
Ib=60µA
9
10
frequency (Hz)
10
10
0
© G. Lissorgues / J.L. Polleux - ESYCOM - 5th April 2004
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Photonics and microwaves

Microwave phototransistors & the SiGe HPT

Opto amplifier InP/GaInAs at 30 GHz (1,55 µm)
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Opto-microwave Experimental Set-Up
© G. Lissorgues / J.L. Polleux - ESYCOM - 5th April 2004
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Photonics and microwaves
Opto amplifier InP/GaInAs at 30 GHz (1,55 µm)
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InP/InGaAs technology from Opto+/Alcatel
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Vertical illuminated HPT technology
fT=70GHz; fmax=30GHz
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Pure electrical HBT technology : fmax=65GHz
The HPT as a 3-Port
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Transferring the matching concept to phototransistors
Specifying the base load impedance conditions
© G. Lissorgues / J.L. Polleux - ESYCOM - 5th April 2004
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Photonics and microwaves
Opto amplifier InP/GaInAs at 30 GHz (1,55 µm)
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Opto-microwave modelling : the HPT as a 3-port !
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Opto-microwave power gain and matching circuits
•Opto-microwave power gain :
(“Model and definitions for the analysis of HPTs : Application to InP and SiGe
phototransistors”, NEFERTITI Workshop on Phototransistors / MWP 2003)
GOM 
Pout ,elec
1
2
 R0   Popt , RF 
2
 I out ,hpt

P
 opt , RF



2
© G. Lissorgues / J.L. Polleux - ESYCOM - 5th April 2004
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Photonics and microwaves
Opto amplifier InP/GaInAs at 30 GHz (1,55 µm)
J.L. Polleux et al., “Optimization of InP/InGaAs HPT’s gain : Design
and Realization of an Opto-microwave Monolithic Amplifier,” in IEEE
Trans. on MTT, pp. 871- 881, March 2004.
Output power : -55dBm @ 31.7GHz / 26µW
Gom : 7.5 dB
fT=70GHz; fmax=30GHz
© G. Lissorgues / J.L. Polleux - ESYCOM - 5th April 2004
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Photonics and microwaves
Opto-microwave Experimental Set-Up
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Generation of microwaves with beating of lasers
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External cavity laser at 940nm
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SiGe HPT or InP/InGaAs measurements
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Optomicrowave circuits measurements
–
Better accuracy in frequency than transient short impulse
techniques
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Novel modulation techniques
© G. Lissorgues / J.L. Polleux - ESYCOM - 5th April 2004
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Photonics and microwaves

Microwave phototransistors & the SiGe HPT

Opto amplifier InP/GaInAs at 30 GHz (1,55 µm)

Opto-microwave Experimental Set-Up
© G. Lissorgues / J.L. Polleux - ESYCOM - 5th April 2004
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Photonics and microwaves
Opto-microwave Experimental Set-Up
Diode Laser n°1
Diode Laser n°2
936.6 nm <l< 947.3nm
903.5 nm <l < 943.5 nm
5,1mW
10,5mW
Free mode hop range
 # 10 GHz
 # 10 GHz
With mode hop range
 > 2 THz
 > 2 THz
wavelenght
Power after the
coupling fibre
© G. Lissorgues / J.L. Polleux - ESYCOM - 5th April 2004
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Photonics and microwaves
- perspectives Item 4 : Photonics and microwaves
- Microwave links in optics and monolithic circuits
- Photonic and microwave components
Photonic integrated circuits
Item 3 : Microsystems and micro-technologies
- RF and optical MEMS
© G. Lissorgues / J.L. Polleux - ESYCOM - 5th April 2004
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Silicon Photonic Crystals
Collaboration of ESIEE with IEF – CNRS,
Univ. Orsay
 Development of technological process for small feature sizes
 Holes of 0,2 m in diameter spaced by 0,3 m (depth is 5 m)
 DRIE (ICP) etching. Combination of bosch process and cryogenic.
1D crystal
2D crystals
Optical Resonant Lateral
Cavity
© G. Lissorgues / J.L. Polleux - ESYCOM - 5th April 2004
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Photonics and microwaves
- perspectives 
Photonics and microwaves components
– New optical interconnections : “OPTIMISTIC” project
– Developping an optical Silicon Technology for the 0.61µm wavelength range
– Waveguides : SiO2 not Si ; polymer ;
– Photonic crystals and Resonant cavities for:
– Optical modulation
– Detection enhancement
– BCB Motherboard Multi-chip Integration
– LED Si sources : French South African Technical Institute in
Electronics of ESIEE Group
© G. Lissorgues / J.L. Polleux - ESYCOM - 5th April 2004
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Communication Systems and Microsystems Lab.
G.Lissorgues / Assoc. Prof.
JL. Polleux / Assist. Prof
© G. Lissorgues / J.L. Polleux - ESYCOM - 5th April 2004