Background Statement for SEMI Draft Document #4477
Revision to SEMI M9.7-0200, Specification for Round 150 mm
Polished Monocrystalline Gallium Arsenide Wafers (Notched)
Note: This background statement is not part of the balloted item. It is provided solely to assist the recipient in
reaching an informed decision based on the rationale of the activity that preceded the creation of this document.
Note: Recipients of this document are invited to submit, with their comments, notification of any relevant patented
technology or copyrighted items of which they are aware and to provide supporting documentation. In this context,
“patented technology” is defined as technology for which a patent has issued or has been applied for. In the latter
case, only publicly available information on the contents of the patent application is to be provided.
This ballot proposes changes to be made to SEMI M9.7. This ballot is NOT a complete rewrite of that document.
ONLY the proposed changes are up for ballot.
This ballot adds a second option for the position of the laser mark for 150mm diameter GaAs wafers. Position A is
the original SEMI Standard position, where the laser mark is adjacent to the notch. Position B places the mark at 45
degrees clockwise from the notch, i.e., where the major flat would be if the wafer had flats. The use of this Position
B offers some advantages when the processed wafer is eventually diced into individual chips. For some devices,
significantly more die can be obtained when the mark is at Position B.
This ballot will be adjudicated at the next meeting of the North America Compound Semiconductor Materials
meeting. Voters will be informed of the schedule for this meeting when the details are finalized. Responses to the
ballot may be reviewed at one or more task force meetings prior to the formal committee meeting. Voters will be
notified if such meetings are scheduled.
Semiconductor Equipment and Materials International
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SEMI Draft Document #4477
Revision to SEMI M9.7-0200, Specification for Round 150 mm
Polished Monocrystalline Gallium Arsenide Wafers (Notched)
This ballot proposes changes to be made to SEMI M9.7. This ballot is NOT a complete rewrite of that document.
ONLY the proposed changes are up for ballot.
Summary of the proposed changes:
In Table 1, Physical Requirements:
 Under Laser Marking, change “Position” to “Position A”.
 Add a new row following “Position A” with the following values:
o Property: “Position B”
o Specification: “45 degrees clockwise from notch”
o Reference: “Figure 7”
Change the title of Figure 6 from “Character Window Location” to “Laser Mark Character Window: Position A”
Add a new Figure 7, Laser Mark Character Window: Position B, as seen in the sample pages following.
The following pages illustrate how the changes listed above will affect SEMI M9.7.
Note: Additions are indicated by underline and deletions are indicated by strikethrough.
This is a draft document of the SEMI International Standards program. No material on this page is to be construed as an official or adopted standard. Permission is granted to
reproduce and/or distribute this document, in whole or in part, only within the scope of SEMI International Standards committee (document development) activity. All other
reproduction and/or distribution without the prior written consent of SEMI is prohibited.
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Document Number: 4477
Date: 3/8/2016
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SEMI M9.7
SPECIFICATION FOR ROUND 150 mm POLISHED
MONOCRYSTALLINE GALLIUM ARSENIDE WAFERS (NOTCHED)
1 Purpose
1.1 This specification defines properties of 150 mm monocrystalline GaAs substrates, in agreement with presently
established industry practice. It uniquely defines those mechanical parameters that do not need, for technical
reasons, a choice of different values.
2 Scope
2.1 The parameters defined include the values and tolerances of wafer diameter, thickness and surface orientation.
The position and depth of the notch and laser marking are also specified.
2.2 The complete specification of this product includes the requirements of SEMI M9, excluding those that are not
relevant to this specification (e.g., flat positions).
2.3 This standard does not purport to address safety issues, if any, associated with its use. It is the responsibility of
the users of this standard to establish appropriate safety and health practices and determine the applicability of
regulatory limitations prior to use.
3 Referenced Standards
3.1 SEMI Standards
SEMI M12 — Specification for Serial Alphanumeric Marking of the Front Surface of Wafers
4 Physical Requirements
Table 1 Physical Requirements
Property
Specification
Tolerance
Unit
Reference
WAFER
Diameter
150.0
 0.5
mm
Thickness, center point
675
 25
µm
Surface orientation A
(100)
0.5 max.
degrees
Figure 2
Surface orientation B
Tilt
Orthogonal misorientation
2 off (100) towards (110)
 0.5
degrees
Figure 3
0
 5 max.
degrees
Figure 4
NOTCH
Orientation
[010]
2
degrees
Figure 1
Depth
1.0
+ 0.25, -0.0
mm
Figure 5
Opening angle
90
+ 5, -1
degrees
Figure 5
LASER MARKING
Surface
front side
Position A
adjacent to notch
Figure 6
Position B
45 degrees clockwise from notch
Figure 7
Mandatory content
check characters
SEMI M12
This is a draft document of the SEMI International Standards program. No material on this page is to be construed as an official or adopted standard. Permission is granted to
reproduce and/or distribute this document, in whole or in part, only within the scope of SEMI International Standards committee (document development) activity. All other
reproduction and/or distribution without the prior written consent of SEMI is prohibited.
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As
Ga
Top View of LEC Crystal
Showing As and Ga Facet
_
(011)
KOH Etch Pit
_
(111)
As
_
(010)
(001)
_
(110)
__
(101)
(011)
(011)
__
(100)
(111)
Ga
Cross Section of Etch Figure
on Front Face of Wafer
_
(001)
_
(101)
(111)
Ga
(110)
(010)
_
(111)
As
_
(011)
Figure 1
Diagram Shows a GaAs Wafer with Notch
This is a draft document of the SEMI International Standards program. No material on this page is to be construed as an official or adopted standard. Permission is granted to
reproduce and/or distribute this document, in whole or in part, only within the scope of SEMI International Standards committee (document development) activity. All other
reproduction and/or distribution without the prior written consent of SEMI is prohibited.
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Figure 2
Notched GaAs Wafer Illustrating Surface Orientation A
This is a draft document of the SEMI International Standards program. No material on this page is to be construed as an official or adopted standard. Permission is granted to
reproduce and/or distribute this document, in whole or in part, only within the scope of SEMI International Standards committee (document development) activity. All other
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Figure 3
Notched GaAs Wafer Illustrating Surface Orientation B, with Tilt
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reproduce and/or distribute this document, in whole or in part, only within the scope of SEMI International Standards committee (document development) activity. All other
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Figure 4
Notched GaAs Wafer Illustrating Surface Orientation B, with Tilt and Orthogonal Misorientation
This is a draft document of the SEMI International Standards program. No material on this page is to be construed as an official or adopted standard. Permission is granted to
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Figure 5
Notch Dimensions
Figure 6
Laser Mark Character Window: Position A Location
This is a draft document of the SEMI International Standards program. No material on this page is to be construed as an official or adopted standard. Permission is granted to
reproduce and/or distribute this document, in whole or in part, only within the scope of SEMI International Standards committee (document development) activity. All other
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Notch
Character Window
45 degree
Figure 7. Position B of Laser Mark
(Character
Window)
Figure
7
Laser Mark Character Window: Position B
NOTICE: SEMI makes no warranties or representations as to the suitability of the standard(s) set forth herein for
any particular application. The determination of the suitability of the standard(s) is solely the responsibility of the
user. Users are cautioned to refer to manufacturer’s instructions, product labels, product data sheets, and other
relevant literature respecting any materials or equipment mentioned herein. These standards are subject to change
without notice.
By publication of this standard, Semiconductor Equipment and Materials International (SEMI) takes no position
respecting the validity of any patent rights or copyrights asserted in connection with any item mentioned in this
standard. Users of this standard are expressly advised that determination of any such patent rights or copyrights, and
the risk of infringement of such rights are entirely their own responsibility.
This is a draft document of the SEMI International Standards program. No material on this page is to be construed as an official or adopted standard. Permission is granted to
reproduce and/or distribute this document, in whole or in part, only within the scope of SEMI International Standards committee (document development) activity. All other
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