MOSFET Summary A very nice summary of MOSFET behavior (from the University of Waterloo, Canada) appeared on the Internet at the following site: www.ece.uwaterloo.ca/~msachdev/ECE637/OH_MOS.pdf - Dec 3, 2004 You would find much of it useful as you review for the final in EE 40. Note the following suggestions: 1. On Slide 5 the last line is incorrect: on an NMOS transistor the substrate is usually connected to the ground (the source), and on a PMOS transistor it is usually connected to the positive bias voltage (the source, at potential VDD). 2. The author uses in the ID equations multipliers K’n = nCox and Kn = K’nW/L, as does Rabaey et al. (see Eq. 3.25). 3. You may ignore the channel length modulation factor introduced on Slide 13. 4. Slides 14-18 give you another look at the capacitances that affect propagation delay (the author may use slightly different symbols but the message is the same as ours). 5. You may ignore Slides 19-27. 6. Transistor scaling is discussed in Slides 28-30; we’ll probably touch on this subject in class.