Future of CMOS Technology and Manufacturing
Hiroshi Iwai
Frontier Collaborative Research Center, Tokyo Institute of Technology
When: Monday, November 1, 2004, 1:30PM - 3:30PM
Where: Engr II Building, Room: 102 – Auditorium at UCF
Abstract
Recently, CMOS downsizing has been accelerated very aggressively in both production and research level, and even
transistor operation of a 5 nm gate length CMOS was reported in a conference. However, many serious problems are
expected for implementing small-geometry MOSFETs into large scale integrated circuits even for 45 nm technology node,
and it is questionable whether we can successfully introduce sub-10 nm CMOS LSIs into market or not because of many
reasons such as insufficient current drive and huge manufacturing cost. In this paper, possible limitation for the
downscaling of CMOS and post downscaled CMOS technologies are discussed from many aspects.
Biography of Dr. H. Iwai
Hiroshi Iwai received the B.E. and Ph.D. degrees in electrical engineering from the University of Tokyo, Japan in 1972 and
1992, respectively. In 1973, he joined the Research and Development Center of Toshiba Corporation, Kawasaki, Japan,
where he developed the first generation of Toshiba's NMOS LSI technology. From 1977 to 1979, he was also associated
with NEC-Toshiba Information Systems, Inc., Kawasaki, Japan. From 1979 to 1989 he was with the Semiconductor Device
Engineering Laboratory in the Semiconductor Group of Toshiba. In 1983 and 1984, he worked with Prof. R. W. Dutton at
the Integrated Circuit Laboratory, Stanford University, Stanford, CA, as a Visiting Scholar, where he studied smallgeometry effects of MOSFET capacitances. From 1989 to 1996, he was associated with the ULSI Research Laboratories in
the Research and Development Center of Toshiba. From 1997 to March 1999, he was a chief specialist of Microelectronics
Engineering Laboratories of Toshiba. From April of 1999 to present, he is a professor of Dept. of Advanced Applied
Electronics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Nagatsuta,
Yokohama, Japan. Currently, he is also a professor of Frontier Collaborative Research Center and a Research Planning
Officer of Strategic Research Planning Office at the institute. His current research interests are downsizing of CMOS, high
K gate insulator, ultra-shallow junction, and RF silicon technologies for mobile telecommunication.
Since joining Toshiba, he has developed several generations of high density static RAM's, dynamic RAM's and logic LSI's
including CMOS, bipolar, and Bi-CMOS devices. He has also been engaged in research on device physics, process
technologies, and T-CAD related to small-geometry MOSFETs and high speed bipolar transistors. His research area covers
wide range; isolation scaling analysis, deep ion-implanted channel doping technique, on-chip capacitance measurement
technique, two-dimensional process and device simulation, small geometry MOSFET capacitance analysis, rapid thermal
process, silicides technique, interconnects technique, nitrided oxide gate insulator technique, p+polysilicon gate MOSFETs,
polysilicon emitter technique, BiCMOS process, hot carrier effects on small geometry MOS and bipolar transistors, bias
temperature tests of MOSFETs, charge pumping measurement technique, mechanical stress analysis of trench isolation, Ti-,
Ni-, Co- silicide technique, 40 nm gate length MOSFETs and 1.5 nm thick direct tunneling gate oxide MOSFETs, RF
CMOS technologies and so on. He has authored and coauthored more than 200 papers.
Dr. Iwai has served on many committees of conferences and editors of several journals. He is the President of the IEEE
EDS, a Fellow of IEEE, an elected member of the IEEE EDS AdCom, an editor of IEEE EDS Newsletter, a guest editor of
IEEE Trans. on Electron Devices, and an editor of the Proceedings of ECS Symp. on ULSI Process Integration. His awards
include Local Commendation for Invention from Japan Institute of Invention and Innovation (1990), Grand Prize of Nikkei
BP Technology Awards (1994), IEEE EDS Paul Rappaport Award (1994), IEICE ES Electronics Award (1998), and IEEE
EDS J.J. Ebers Award (2001).
Jointly Organized by:
Electrical & Computer Engineering Department, UCF
IEEE ED/CPMT Society, Orlando Chapter