This product complies with the RoHS Directive (EU 2002/95/EC).
Switching Diodes
MA6X122 (MA122)
Silicon epitaxial planar type
Unit: mm
2.90+0.20
–0.05
1.9±0.1
(0.95) (0.95)
3
2
di
p
Pl
lan nclu
ea
e
se
pla m d m des
ne ain ain foll
htt visit
d te t o
p:/ fo
/w llo dis disc nan enan wing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
life
an ut e
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
i
o
/
n.
■ Absolute Maximum Ratings Ta = 25°C
Maximum peak reverse voltage
Forward current
*1
VRM
IF
Peak forward current *1
IFM
Non-repetitive peak forward
surge current *1, 2
IFSM
Junction temperature
Tj
Storage temperature
Tstg
Note) *1: Value for single diode
*2: t = 1 s
Unit
80
V
80
V
100
mA
225
mA
500
mA
150
°C
−55 to +150
°C
1.1+0.3
–0.1
VR
Rating
1.1+0.2
–0.1
Reverse voltage
10˚
0 to 0.1
Symbol
0.4±0.2
1
0.30+0.10
–0.05
Parameter
2.8+0.2
–0.3
6
5˚
5
M
Di ain
sc te
on na
tin nc
ue e/
d
4
• Four isolated elements contained in one package, allowing highdensity mounting
• Centrosymmetrical wiring, allowing to free from the taping direction
1.50+0.25
–0.05
■ Features
0.16+0.10
–0.06
(0.65)
For switching circuit
EIAJ: SC-74
1: Cathode 1
2: Cathode 2
3: Anode 3, 4
4: Cathode 3
5: Cathode 4
6: Anode 1, 2
Mini6-G2 Package
Marking Symbol: M2A
Internal Connection
4
5
6
3
2
1
ce
/D
isc
on
tin
ue
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Forward voltage
VF
VR
Reverse current
en
Terminal capacitance
an
Reverse voltage
Ma
int
Reverse recovery time
*
IR
Ct
trr
Conditions
Min
Typ
IF = 100 mA
IR = 100 µA
Max
1.2
80
Unit
V
V
VR = 75 V
100
nA
VR = 0 V, f = 1 MHz
15
pF
IF = 10 mA, VR = 6 V
Irr = 0.1 IR , RL = 100 Ω
10
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *: trr measurement circuit
Bias Application Unit (N-50BU)
Input Pulse
tp
tr
10%
A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
Publication date: March 2004
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
t
IF
trr
t
Irr = 0.1 IR
IF = 10 mA
VR = 6 V
RL = 100 Ω
Note) The part number in the parenthesis shows conventional part number.
SKF00052BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
MA6X122
IF  V F
IR  VR
103
VF  T a
1.6
10
Ta = 150°C
1
Ta = 150°C
100°C
10
25°C
−20°C
10 −1
10 −2
25°C
1.2
IF = 100 mA
0.8
M
Di ain
sc te
on na
tin nc
ue e/
d
1
100°C
Forward voltage VF (V)
Reverse current IR (µA)
Forward current IF (mA)
102
10 −1
0.4
0.6
0.8
1.0
1.2
IR  T a
0
20
40
60
80
0
−40
100 120 140
Reverse voltage VR (V)
1
35 V
10 −2
10 −3
10 −4
80
120 160 200 240
5
4
3
2
Ma
int
en
an
ce
/D
isc
on
tin
Ambient temperature Ta (°C)
0
20
40
60
80
100
Reverse voltage VR (V)
SKF00052BED
120
160
200
IF(surge)  tW
Ta = 25°C
f = 1 MHz
Ta = 25°C
0
40
80
103
1
0
40
Ct  VR
1V
10 −1
0
Ambient temperature Ta (°C)
Forward surge current IF(surge) (A)
VR = 75 V
10 −5
−40
10 −5
6
10
Reverse current IR (µA)
3 mA
0.4
di
p
Pl
lan nclu
ea
e
se
pla m d m des
ne ain ain foll
htt visit
d te t o
p:/ fo
/w llo dis disc nan enan wing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
life
an ut e
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
i
o
/
n.
0.2
Terminal capacitance Ct (pF)
0
Forward voltage VF (V)
2
10 mA
10 −4
ue
10 −2
10 −3
120
IF(surge)
tW
Non repetitive
102
10
1
10 −1
10 −1
1
Pulse width tW (ms)
10
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
M
Di ain
sc te
on na
tin nc
ue e/
d
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
d
pla inc
ne lud
se
pla m d m es
v
ne ain ain foll
htt isit
d te t o
p:/ fo
/w llo dis disc nan enan wing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
life
an ut e
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
i
o
/
n.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
Pl
ea
Ma
int
en
an
ce
/D
isc
on
tin
ue
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.