MA111 Switching Diodes MA221 , MA222, MA223 Silicon epitaxial planer type Unit : mm For high speed switching circuits ● Extra-small cylindrical package, most favorable for high-density COLORED BAND INDICATES CATHODE 0.3 min. ■ Features φ1.4±0.1 mounting M Di ain sc te on na tin nc ue e/ d ● Overall dimensions similar to those of resistor and capacitor (1/8W type), 1 switching speed and small capacity between pins, Ct di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. ● High 3.5±0.1 enabling sharing of the mounted equipment ■ Absolute Maximum Ratings (Ta= 25˚C) Parameter Symbol MA221 Reverse voltage (DC) MA223 2 50 V φ1.5 max. 75 MA221 1 : Cathode 2 : Anode Leadless Package 35 VRRM MA222 reverse voltage Unit 35 VR MA222 Repetitive peak Rating MA223 50 V 75 Average forward current IF (AV) Peak forward current IFRM Non-repetitive peak forward surge current IFSM * Junction temperature Tj Storage temperature Tstg mA 225 mA 500 mA 200 ˚C – 55 to +150 ˚C ue * t=1s 100 /D isc on tin ■ Electrical Characteristics (Ta= 25˚C) Parameter Symbol an ce MA221 IR int en MA222 Reverse current (DC) Ma MA223 IR MA223 Forward voltage (DC) Reverse voltage (DC) MA221 Terminal capacitance Reverse recovery time MA222/223 Unit 25 nA VR= 30V 0.1 µA VR=15V 25 nA VR= 50V 5 µA VR= 20V 25 nA min typ 5 µA VR= 35V, Ta=150˚C 100 VR=50V, Ta=150˚C 100 VR= 75V, Ta=150˚C 100 VF IF=100mA VR IR= 5µA Ct MA221 Condition VR= 75V MA221 MA222 max VR=15V trr * 0.95 1.2 35 VR= 0V, f=1MHz 2 10 ❖ Rated input/output frequency : 100MHz (MA221), 250MHz (MA222, MA223) ■ Cathode Indication Type No. MA221 MA222 MA223 Color White Green Purple V V IF=10mA, VR=1V Irr= 0.1 · IR, RL=100Ω µA 2.2 4 pF ns MA221, MA222, MA223 Switching Diodes Common characteristics chart * trr measuring circuit VF – Ta 1.6 Bias Insertion Unit N-50BU Input Pulse Output Pulse 1.4 tp 10% A trr IF 1.2 t 90% VR Pulse Generator PG-10N Rs=50Ω t tp=2ms tr=0.35ns δ=0.05 IF=225mA 1.0 75mA 0.8 M Di ain sc te on na tin nc ue e/ d W.F.Analyzer SAS-8130 Ri=50Ω Irr=0.1 · IR IF=10mA VR=1V RL=100W Forward voltage VF (V) tr 0.6 10mA 0.4 1mA di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. 0.2 0 –40 Characteristics chart of MA221 IR – Ta 0 40 IR – VR 102 102 80 120 2.0 Reverse current IR (µA) Reverse current IR (µA) 20V 1 10–1 10–2 1 10–1 25˚C 0 25 50 75 /D isc on tin 10–3 10–3 100 125 150 175 ce Ambient temperature Ta (˚C) 0 f=1MHz Ta=25˚C 1.6 1.2 0.8 0.4 ue 10–2 Terminal capacitance Ct (pF) 10 VR=35V 200 Ct – VR 100˚C Ta=150˚C 10 160 Ambient temperature Ta (˚C) 0 5 0 10 15 20 25 30 35 40 45 Reverse voltage VR (V) 4 8 12 16 20 Reverse voltage VR (V) en an Characteristics chart of MA222 and MA223 IR – VR 102 102 VR=75V 20V 10 Reverse current IR (µA) Reverse current IR (µA) 1 2.0 Ta=150˚C 50V 10 Ct – VR 1 10–1 25˚C 10–1 10–2 0 20 40 60 80 100 120 140 160 180 Ambient temperature Ta (˚C) f=1MHz Ta=25˚C 1.6 1.2 0.8 0.4 10–3 10–2 Terminal capacitance Ct (pF) Ma int IR – Ta 0 0 10 20 30 40 50 60 70 80 90 Reverse voltage VR (V) 0 4 8 12 16 Reverse voltage VR (V) 20 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. d pla inc ne lud se pla m d m es v ne ain ain foll htt isit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. Pl ea Ma int en an ce /D isc on tin ue (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.