This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA2J729 (MA729)
Silicon epitaxial planar type
Unit: mm
1.25±0.1
For super high speed switching
For small current rectification
0.7±0.1
0.35±0.1
1.7±0.1
5˚
• Forward current (Average) I F(AV) = 200 mA rectification is
possible
• High-density mounting is possible
2
0.5±0.1
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0.16+0.1
–0.06
5˚
Symbol
VR
Repetitive peak reverse voltage
Peak forward current
VRRM
IFM
Forward current (Average)
IF(AV)
Non-repetitive peak forward
surge current *
IFSM
Junction temperature
Tj
Storage temperature
Tstg
Rating
Unit
30
V
30
V
300
mA
200
mA
1
A
150
°C
−55 to +150
°C
(0.15)
Parameter
0 to 0.1
■ Absolute Maximum Ratings Ta = 25°C
Reverse voltage
2.5±0.2
0 to 0.1
■ Features
0.4±0.1
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1: Anode
2: Cathode
EIAJ: SC-76
SMini2-F1 Package
Marking Symbol: 2B
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
■ Electrical Characteristics Ta = 25°C ± 3°C
VF
Reverse current
ce
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Forward voltage
Symbol
ue
Parameter
IR
Terminal capacitance
Ct
trr
an
Reverse recovery time *
Conditions
Min
Typ
IF = 200 mA
VR = 30 V
Max
Unit
0.55
V
50
µA
VR = 0 V, f = 1 MHz
30
pF
IF = IR = 100 mA
Irr = 0.1 IR, RL = 100 Ω
3.0
ns
Ma
int
en
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 1 GHz.
4. *: trr measurement circuit
Bias Application Unit (N-50BU)
Input Pulse
tp
tr
10%
A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
Output Pulse
t
IF
trr
t
Irr = 0.1 IR
IF = 100 mA
IR = 100 mA
RL = 100 Ω
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004
SKH00015BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
MA2J729
IF  VF
IR  VR
VF  Ta
105
103
0.5
100°C 25°C
Ta = 150°C
104
Reverse current IR (µA)
−20°C
10
IF = 200 mA
0.4
Forward voltage VF (V)
Ta = 150°C
103
100°C
102
0.3
100 mA
M
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Forward current IF (mA)
102
1
10−1
1
0
0.1
0.2
0.3
0.4
0.5
0.6
IR  Ta
5
10
15
20
40
Terminal capacitance Ct (pF)
104
15 V
5V
103
VR = 30 V
102
10
80
120
160
20
10
200
0
5
10
15
20
an
en
int
Ma
2
25
Reverse voltage VR (V)
ce
/D
isc
on
tin
Ambient temperature Ta (°C)
10 mA
SKH00015BED
0
−40
0
40
80
120
160
Ambient temperature Ta (°C)
f = 1 MHz
Ta = 25°C
ue
40
30
30
0
0
25
Ct  VR
105
Reverse current IR (µA)
0
Reverse voltage VR (V)
Forward voltage VF (V)
1
−40
0.1
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10−2
25°C
10
0.2
30
200
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
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(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
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(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
Pl
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int
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(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.