PNP small signal transistor
BCX17
Small load switch transistor with high gain and Low saturation voltage.
Features
(1) High gain and low saturation voltage.
(2) Ideal for small load switching applications.
Complements the BCX19
Dimensions (Unit : mm)
2.9
0.4
0.95
0.45
0.2Min.
SST3
1.3
2.4
(3)
Packaging specifications
Package
Type
(2)
Taping
Code
T116
Basic ordering unit (pieces)
3000
(1)
0.95 0.95
0.15
1.9
(1)Emitter
(2)Base
(3)Collector
BCX17
Each lead has same dimensions
Abbreviated symbol : GT1
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Collector-emitter voltage (VBE=0)
VCES
−50
V
Collector-emitter voltage (open base)
VCEO
−45
V
Emitter-base voltage
VEBO
−5
V
Collector current
IC
−0.5
A
Collector current (peak value)
ICM
−1
A
0.2
W
Collector power dissipation
PC
0.35
W
∗
0.425
W
∗2
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−65 to 150
°C
∗ Mounted on a 7×5×0.6 mm CERAMIC SUBSTRATE
∗2 Mounted on a 15×15×0.6 mm CERAMIC SUBSTRATE
Electrical characteristics (Ta=25C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Collector-emitter breakdown voltage BVCES
−50
−
−
V
IC= −50μA
Collector-emitter breakdown voltage BVCEO
−45
−
−
V
IC= −10mA
BVEBO
−5
−
−
V
IE= −50μA
ICBO
−
−
−0.1
μA
VCB= −20V
Emitter-base breakdown voltage
Collector-base cutoff current
Conditions
IEBO
−
−
−10
μA
VEB= −5V
Collector-emitter saturation voltage
VCE(sat)
−
−
−0.62
V
IC/IB= −500mA/ −50mA
Base-emitter voltage
VBE(on)
V
VCE/IC= −1V/ −500mA
Emitter-base cutoff current
DC current transfer ratio
Transition frequency
Collector-base cutoff current
−
−
−1.2
100
−
600
70
−
−
40
−
−
fT
−
200
−
MHz
ICBO
−
−
−5
μA
hFE
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c 2011 ROHM Co., Ltd. All rights reserved.
○
VCE= −1V, IC= −100mA
−
VCE= −1V, IC= −300mA
VCE= −1V, IC= −500mA
1/2
VCE= −5V, IE= −20mA, f=100MHz
VCB= −20V, Ta=150°C
2011.09 - Rev.B
Data Sheet
BCX17
−200
−100
−50
−20
−10
−5
−2
−1
−0.5
−0.4
−0.8
−1.2
−160
Grounded emitter propagation
characteristics
1k
Ta=25°C
500
200
100
VCE= −3V
−2V
−1V
50
20
10
5
2
1
−1m
−10m
−100m
−1
COLLECTOR CURRENT : IC (A)
Fig.4
−0.7mA
−120
−0.6mA
−100
−0.5mA
−80
−0.4mA
−60
−0.3mA
−0.2mA
−40
−0.1mA
IB=0mA
−4
Fig.2
−8
−12
−16
−100
IC/IB=50
20
10
−10
−5
−2
−10m
−100m
A
A
−4m
mA
−200
IB= −2
−100
−0.2
−0.4
−0.6
−1
Ta=25°C
−0.8
−1.0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Grounded emitter output
characteristics ( )
Ta=25°C
VCE= −5V
500
200
100
50
20
10
5
2
1
1m
COLLECTOR CURRENT : IC (A)
Collector-emitter saturation
voltage vs. collector current
A
−8m
1000
−200
−1
−1m
mA
−10
−6m
Fig.3
Ta=25°C
−20
mA
−12
−300
0
0
−20
−500
−50
−14mA
−16mA
−18mA
−400 −20mA
Grounded emitter output
characteristics ( )
−1000
Fig.5
DC current gain vs.
collector current
1000
−0.8mA
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR SATURATION VOLTAGE : VCE (sat) (mV)
Fig.1
−500
−140
0
0
−1.6
BASE TO EMITTER VOLTAGE : VBE (V)
DC CURRENT GAIN : hFE
A
−1.0m
−0.9mA
−20
−0.2
−0.1
0
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE
: Cib (pF)
Ta=25°C
−180
COLLECTOR CURRENT : IC (mA)
−200
Ta=25°C
VCE=6V
TRANSITION FREQUENCY : fT (MHz)
−1000
−500
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
Electrical characteristics curves
10m
100m
1
EMITTER CURRENT : IE (A)
Fig.6
Gain bandwidth product vs.
emitter current
Ta=25°C
f=1MHz
IE=0A
500
200
100
Cib
50
Cob
20
10
5
2
1
−0.1
−1
−10
−100
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE
: VEB (V)
Fig.7
Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
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c 2011 ROHM Co., Ltd. All rights reserved.
○
2/2
2011.09 - Rev.B
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R1120A